20N65 Todos los transistores

 

20N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 20N65

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 416 W

Tensión drenaje-fuente |Vds|: 650 V

Tensión compuerta-fuente |Vgs|: 30 V

Corriente continua de drenaje |Id|: 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 130 nS

Conductancia de drenaje-sustrato (Cd): 300 pF

Resistencia drenaje-fuente RDS(on): 0.32 Ohm

Empaquetado / Estuche: TO-3PTO-247

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20N65 Datasheet (PDF)

0.1. stb20n65m5 sti20n65m5 stp20n65m5 stw20n65m5.pdf Size:1169K _st

20N65
20N65

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABTABVDS @ RDS(on) Order codes ID2TJmax max3321 1STB20N65M5D2PAKI2PAKSTI20N65M5710 V 0.19 18 ATABSTP20N65M5STW20N65M5 Worldwide best RDS(on) * area32

0.2. stf20n65m5 stfi20n65m5.pdf Size:808K _st

20N65
20N65

STF20N65M5, STFI20N65M5N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in TO-220FP and I2PAKFP packagesDatasheet production dataFeaturesVDS @ RDS(on) Order codes IDTJmax maxSTF20N65M5710 V 0.19 18 ASTFI20N65M53 Worldwide best RDS(on) * area 12 231 Higher VDSS rating and high dv/dt capabilityTO-220FPI2PAKFP Excellent switching

 0.3. igp20n65h5.pdf Size:1989K _infineon

20N65
20N65

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyIGP20N65H5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGP20N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologi

0.4. ikp20n65h5.pdf Size:2212K _infineon

20N65
20N65

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft anti parallel diodeIKP20N65H5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKP20N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft anti parallel diod

 0.5. igp20n65f5.pdf Size:1991K _infineon

20N65
20N65

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGP20N65F5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGP20N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed F5 technology offering Best-in-Class efficiency in hard switching and resonant

0.6. ikp20n65f5.pdf Size:2213K _infineon

20N65
20N65

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft anti parallel diodeIKP20N65F5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKP20N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft anti par

0.7. spp20n65c3 spa20n65c3 spi20n65c3.pdf Size:611K _infineon

20N65
20N65

SPP20N65C3, SPA20N65C3SPI20N65C3Cool MOS Power TransistorV 650 VDSFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO262 PG-TO220FP PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 High peak current capability Improved transconducta

0.8. ihw20n65r5.pdf Size:2087K _infineon

20N65
20N65

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW20N65R5Data sheetIndustrial Power ControlIHW20N65R5Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic reverse-conducting diode with low forwardvoltage TRENCHSTOPTM technology offers:- very tight parameter distributionG- high ru

0.9. ixya20n65b3.pdf Size:273K _ixys

20N65
20N65

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYA20N65B3GenX3TM IC110 = 20AIXYP20N65B3 VCE(sat) 2.10V IXYH20N65B3tfi(typ) = 87nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-263 (IXYA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXYP)VCES TJ = 25C to 175C 650

0.10. ixyn120n65c3d1.pdf Size:227K _ixys

20N65
20N65

Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYN120N65C3D1IC110 = 100AGenX3TM w/ Diode VCE(sat) 2.8V tfi(typ) = 46nsExtreme Light Punch throughIGBT for 20-60kHz SwitchingESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ =

0.11. ixyh120n65c3.pdf Size:233K _ixys

20N65
20N65

Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYH120N65C3IC110 = 120AGenX3TM VCE(sat) 2.8V tfi(typ) = 46nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, RGE = 1M 650 VC Tab

0.12. ixtk120n65x2 ixtx120n65x2.pdf Size:159K _ixys

20N65
20N65

Advance Technical InformationX2-Class VDSS = 650VIXTK120N65X2Power MOSFET ID25 = 120AIXTX120N65X2 RDS(on) 24m N-Channel Enhancement ModeAvalanche RatedTO-264P (IXTK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 650 VDTabVDGR TJ = 25C to 150C, RGS = 1M 650 V SVGSS Continuous 30 VPLUS247 (IX

0.13. ixfk120n65x2 ixfx120n65x2.pdf Size:159K _ixys

20N65
20N65

Advance Technical InformationX2-Class HiPerFETTM VDSS = 650VIXFK120N65X2Power MOSFET ID25 = 120AIXFX120N65X2 RDS(on) 24m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-264P (IXFK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 650 VDTabVDGR TJ = 25C to 150C, RGS = 1M 650 V SVGSS

0.14. ixtp20n65xm.pdf Size:127K _ixys

20N65
20N65

Preliminary Technical InformationX-Class VDSS = 650VIXTP20N65XMPower MOSFET ID25 = 9A RDS(on) 210m N-Channel Enhancement ModeOVERMOLDEDSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VGDSVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VG = Gate D = DrainVGSM Transient 40 VS = So

0.15. ixyh120n65b3.pdf Size:232K _ixys

20N65
20N65

Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYH120N65B3IC110 = 120AGenX3TM VCE(sat) 1.90V tfi(typ) = 107nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, RGE = 1M 650 VC T

0.16. ixyh20n65c3.pdf Size:257K _ixys

20N65
20N65

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYA20N65C3GenX3TM IC110 = 20AIXYH20N65C3 VCE(sat) 2.50V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-263 AA (IXYA)Symbol Test Conditions Maximum RatingsGEVCES TJ = 25C to 175C 650 VC (Tab)VCGR TJ = 25C

0.17. ixya20n65c3.pdf Size:257K _ixys

20N65
20N65

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYA20N65C3GenX3TM IC110 = 20AIXYH20N65C3 VCE(sat) 2.50V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-263 AA (IXYA)Symbol Test Conditions Maximum RatingsGEVCES TJ = 25C to 175C 650 VC (Tab)VCGR TJ = 25C

0.18. ixyp20n65b3d1.pdf Size:195K _ixys

20N65
20N65

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYP20N65B3D1GenX3TM w/Diode IC110 = 20A VCE(sat) 2.10V tfi(typ) = 87nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-220Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 175C 650 VCTabEVCGR TJ = 25C to 175C, RGE = 1M

0.19. ixyp20n65b3.pdf Size:273K _ixys

20N65
20N65

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYA20N65B3GenX3TM IC110 = 20AIXYP20N65B3 VCE(sat) 2.10V IXYH20N65B3tfi(typ) = 87nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-263 (IXYA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXYP)VCES TJ = 25C to 175C 650

0.20. ixyh20n65b3.pdf Size:273K _ixys

20N65
20N65

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYA20N65B3GenX3TM IC110 = 20AIXYP20N65B3 VCE(sat) 2.10V IXYH20N65B3tfi(typ) = 87nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-263 (IXYA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXYP)VCES TJ = 25C to 175C 650

0.21. ixyn120n65b3d1.pdf Size:226K _ixys

20N65
20N65

Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYN120N65B3D1IC110 = 120AGenX3TM w/ Diode VCE(sat) 1.90V tfi(typ) = 107nsExtreme Light Punch throughIGBT for 10-30kHz SwitchingESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ

0.22. ixyp20n65c3d1m.pdf Size:195K _ixys

20N65
20N65

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP20N65C3D1MGenX3TM w/Diode IC110 = 9A VCE(sat) 2.5V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingSymbol Test Conditions Maximum RatingsOVERMOLDED TO-220VCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE =

0.23. ixya20n65c3d1.pdf Size:250K _ixys

20N65
20N65

XPTTM 650V IGBT VCES = 650VIXYA20N65C3D1GenX3TM w/Diode IC110 = 20AIXYP20N65C3D1 VCE(sat) 2.50V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-263 AA (IXYA)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 175C 650 VC (Tab)VCGR TJ = 25C to 175C, RGE = 1M

0.24. ixta20n65x ixth20n65x ixtp20n65x.pdf Size:231K _ixys

20N65
20N65

Preliminary Technical InformationX-Class VDSS = 650VIXTA20N65XPower MOSFET ID25 = 20AIXTP20N65X RDS(on) 210m IXTH20N65XN-Channel Enhancement ModeTO-263 (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VVG

0.25. ixyp20n65c3d1.pdf Size:250K _ixys

20N65
20N65

XPTTM 650V IGBT VCES = 650VIXYA20N65C3D1GenX3TM w/Diode IC110 = 20AIXYP20N65C3D1 VCE(sat) 2.50V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-263 AA (IXYA)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 175C 650 VC (Tab)VCGR TJ = 25C to 175C, RGE = 1M

0.26. 20n65.pdf Size:175K _utc

20N65
20N65

UNISONIC TECHNOLOGIES CO., LTD 20N65 Power MOSFET 20A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N65 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith planar stripe and DMOS technology. This technology isspecialized in allowing a minimum on-state resistance and superior switching performance. It also can withst

0.27. jcs20n65fh jcs20n65wh.pdf Size:826K _jilin_sino

20N65
20N65

N RN-CHANNEL MOSFET JCS20N65H MAIN CHARACTERISTICS Package ID 20A VDSS 650 V Rdson-max 0.5 @Vgs=10V Qg-typ 45nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

0.28. cs20n65f a9h.pdf Size:431K _crhj

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20N65

Silicon N-Channel Power MOSFET R CS20N65F A9H VDSS 650 V General Description ID 20 A CS20N65F A9H, the silicon N-channel Enhanced PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.37 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

0.29. fhf20n65a fhp20n65a fha20n65a.pdf Size:740K _feihonltd

20N65
20N65

N N-CHANNEL MOSFET FHF20N65A/ FHP20N65A/FHA20N65A MAIN CHARACTERISTICS FEATURES Low gate charge ID 20A Crss ( 20pF) Low Crss (typical 20pF ) VDSS 650V Fast switching Rdson-typ 0.35 @Vgs=10V 100% 100% avalanche tested P (T =25) 85W D C

0.30. srm20n65.pdf Size:251K _sanrise-tech

20N65
20N65

Datasheet 20A, 650V, N-Channel Power MOSFET SRM20N65General Description Symbol The Sanrise SRM20N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM20N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi

0.31. cs20n65fa9h.pdf Size:431K _wuxi_china

20N65
20N65

Silicon N-Channel Power MOSFET R CS20N65F A9H VDSS 650 V General Description ID 20 A CS20N65F A9H, the silicon N-channel Enhanced PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.37 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

0.32. cs20n65f cs20n65p cs20n65v cs20n65w.pdf Size:859K _convert

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20N65

nvertCS20N65F,CS20N65P,CS20N65V,CS20N65WSuzhou Convert Semiconductor Co ., Ltd.650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and PackageInformationDevice Package MarkingCS20N65F T

0.33. fir20n65afg.pdf Size:2667K _first_semi

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20N65

FIR20N65AFGPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=75 nC (Typ.). BVDSS=650V,ID=20A G RDS(on) : 0.42 (Max) @VG=10VD S 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assembly LocationWW = Work

0.34. smf20n65.pdf Size:600K _huake

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20N65

SMF20N65650V N-Channnel MOSFETFeatures 20.0A, 650V, R =0.38@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Va

0.35. lnc20n65 lnd20n65 lnb20n65.pdf Size:1197K _lonten

20N65
20N65

LNC20N65/LND20N65/LNB20N65Lonten N-channel 650V, 20A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 650VDSSadvanced planer VDMOS technology. The I 20ADresulting device has low conduction resistance, R 0.5DS(on),maxsuperior switching performance and high avalanche Q 58.3 nCg,typenergy.Features Low RDS(on) Low gate charge (t

0.36. spa20n65c3.pdf Size:200K _inchange_semiconductor

20N65
20N65

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPA20N65C3FEATURESWith TO-220F packagingNew revolutionary high voltage technologyUltra low gate chargeHigh peak current capabilityImproved transconductanceMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2

0.37. stp20n65m5.pdf Size:205K _inchange_semiconductor

20N65
20N65

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP20N65M5FEATURESTypical R (on)=0.16DSExcellent switching performance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 V

0.38. spp20n65c3.pdf Size:247K _inchange_semiconductor

20N65
20N65

isc N-Channel MOSFET Transistor SPP20N65C3ISPP20N65C3FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

0.39. 20n65nf.pdf Size:469K _chongqing_pingwei

20N65
20N65

20N65NF20 Amps,650 Volts N-CHANNEL MOSFETFEATURETO-220NF 20A,650V,R =0.50@V =10V/10ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capabilityAbsolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol UNIT20N65NFDrain-Source Voltage V 650DSSVGate-Source Voltage V 30GSSContin

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