All MOSFET. 20N65 Datasheet

 

20N65 MOSFET. Datasheet pdf. Equivalent

Type Designator: 20N65

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 416 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 130 nS

Drain-Source Capacitance (Cd): 300 pF

Maximum Drain-Source On-State Resistance (Rds): 0.32 Ohm

Package: TO-3P_TO-247

20N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

20N65 Datasheet (PDF)

1.1. stf20n65m5 stfi20n65m5.pdf Size:808K _update

20N65
20N65

STF20N65M5, STFI20N65M5 N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET in TO-220FP and I2PAKFP packages Datasheet — production data Features VDS @ RDS(on) Order codes ID TJmax max STF20N65M5 710 V 0.19 Ω 18 A STFI20N65M5 3 ■ Worldwide best RDS(on) * area 1 2 2 3 1 ■ Higher VDSS rating and high dv/dt capability TO-220FP I2PAKFP ■ Excellent switching

1.2. stw20n65m5.pdf Size:1169K _update

20N65
20N65

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages Datasheet — production data Features TAB TAB VDS @ RDS(on) Order codes ID 2 TJmax max 3 3 2 1 1 STB20N65M5 D2PAK I2PAK STI20N65M5 710 V 0.19 Ω 18 A TAB STP20N65M5 STW20N65M5 ■ Worldwide best RDS(on) * area 3 2

 1.3. sti20n65m5.pdf Size:1169K _update

20N65
20N65

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages Datasheet — production data Features TAB TAB VDS @ RDS(on) Order codes ID 2 TJmax max 3 3 2 1 1 STB20N65M5 D2PAK I2PAK STI20N65M5 710 V 0.19 Ω 18 A TAB STP20N65M5 STW20N65M5 ■ Worldwide best RDS(on) * area 3 2

1.4. stb20n65m5.pdf Size:1169K _upd

20N65
20N65

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages Datasheet — production data Features TAB TAB VDS @ RDS(on) Order codes ID 2 TJmax max 3 3 2 1 1 STB20N65M5 D2PAK I2PAK STI20N65M5 710 V 0.19 Ω 18 A TAB STP20N65M5 STW20N65M5 ■ Worldwide best RDS(on) * area 3 2

 1.5. srm20n65.pdf Size:251K _upd

20N65
20N65

Datasheet 20A, 650V, N-Channel Power MOSFET SRM20N65 General Description Symbol The Sanrise SRM20N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM20N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi

1.6. stp20n65m5.pdf Size:1169K _upd-mosfet

20N65
20N65

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages Datasheet — production data Features TAB TAB VDS @ RDS(on) Order codes ID 2 TJmax max 3 3 2 1 1 STB20N65M5 D2PAK I2PAK STI20N65M5 710 V 0.19 Ω 18 A TAB STP20N65M5 STW20N65M5 ■ Worldwide best RDS(on) * area 3 2

1.7. cs20n65fa9h.pdf Size:431K _update_mosfet

20N65
20N65

Silicon N-Channel Power MOSFET R ○ CS20N65F A9H VDSS 650 V General Description: ID 20 A CS20N65F A9H, the silicon N-channel Enhanced PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.37 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.8. spp20n65c3 spa20n65c3 spi20n65c3.pdf Size:1938K _infineon

20N65
20N65

SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS Power Transistor V 650 V DS Feature RDS(on) 0.19 ? New revolutionary high voltage technology ID 20.7 A Worldwide best RDS(on) in TO 220 PG-TO262 PG-TO220FP PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 P-TO220-3-31 High peak current capability Improved transconductance Type Package Ord

1.9. ixtp20n65xm.pdf Size:127K _ixys

20N65
20N65

Preliminary Technical Information X-Class VDSS = 650V IXTP20N65XM Power MOSFET ID25 = 9A   RDS(on)    210m     N-Channel Enhancement Mode OVERMOLDED Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V G D S VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V G = Gate D = Drain VGSM Transient 40 V S = So

1.10. ixta20n65x ixth20n65x ixtp20n65x.pdf Size:231K _ixys

20N65
20N65

Preliminary Technical Information X-Class VDSS = 650V IXTA20N65X Power MOSFET ID25 = 20A IXTP20N65X   RDS(on)    210m     IXTH20N65X N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VG

1.11. ixfk120n65x2 ixfx120n65x2.pdf Size:159K _ixys

20N65
20N65

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFK120N65X2 Power MOSFET ID25 = 120A IXFX120N65X2   RDS(on)  24m       N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264P (IXFK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 150C 650 V D Tab VDGR TJ = 25C to 150C, RGS = 1M 650 V S VGSS

1.12. ixtk120n65x2 ixtx120n65x2.pdf Size:159K _ixys

20N65
20N65

Advance Technical Information X2-Class VDSS = 650V IXTK120N65X2 Power MOSFET ID25 = 120A IXTX120N65X2   RDS(on)  24m       N-Channel Enhancement Mode Avalanche Rated TO-264P (IXTK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 150C 650 V D Tab VDGR TJ = 25C to 150C, RGS = 1M 650 V S VGSS Continuous  30 V PLUS247 (IX

1.13. 20n65.pdf Size:175K _utc

20N65
20N65

UNISONIC TECHNOLOGIES CO., LTD 20N65 Power MOSFET 20A, 650V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 20N65 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand h

1.14. igp20n65f5.pdf Size:1991K _igbt_a

20N65
20N65

IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology IGP20N65F5 650V IGBT high speed switching series fifth generation Data sheet Industrial Power Control IGP20N65F5 High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology Features and Benefits: C High speed F5 technology offering • Best-in-Class efficiency in hard switching and resonant

1.15. igp20n65h5.pdf Size:1989K _igbt_a

20N65
20N65

IGBT High speed 5 IGBT in TRENCHSTOPTM 5 technology IGP20N65H5 650V IGBT high speed switching series fifth generation Data sheet Industrial Power Control IGP20N65H5 High speed switching series fifth generation High speed 5 IGBT in TRENCHSTOPTM 5 technology Features and Benefits: C High speed H5 technology offering • Best-in-Class efficiency in hard switching and resonant topologi

1.16. ikp20n65f5.pdf Size:2213K _igbt_a

20N65
20N65

IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti parallel diode IKP20N65F5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet Industrial Power Control IKP20N65F5 High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti par

1.17. ihw20n65r5.pdf Size:2087K _igbt_a

20N65
20N65

Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW20N65R5 Data sheet Industrial Power Control IHW20N65R5 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic reverse-conducting diode with low forward voltage • TRENCHSTOPTM technology offers: - very tight parameter distribution G - high ru

1.18. ixya20n65b3.pdf Size:273K _igbt_a

20N65
20N65

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYA20N65B3 GenX3TM IC110 = 20A IXYP20N65B3   VCE(sat)    2.10V     IXYH20N65B3 tfi(typ) = 87ns Extreme Light Punch Through IGBT for 5-30kHz Switching TO-263 (IXYA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXYP) VCES TJ = 25°C to 175°C 650

1.19. ixyn120n65b3d1.pdf Size:226K _igbt_a

20N65
20N65

Advance Technical Information VCES = 650V XPTTM 650V IGBT IXYN120N65B3D1 IC110 = 120A GenX3TM w/ Diode   VCE(sat)    1.90V     tfi(typ) = 107ns Extreme Light Punch through IGBT for 10-30kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E  VCES TJ = 25°C to 175°C 650 V G VCGR TJ

1.20. ixyp20n65b3d1.pdf Size:195K _igbt_a

20N65
20N65

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYP20N65B3D1 GenX3TM w/Diode IC110 = 20A   VCE(sat)    2.10V     tfi(typ) = 87ns Extreme Light Punch Through IGBT for 5-30kHz Switching TO-220 Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 175°C 650 V C Tab E VCGR TJ = 25°C to 175°C, RGE = 1M

1.21. ixyn120n65c3d1.pdf Size:227K _igbt_a

20N65
20N65

Advance Technical Information VCES = 650V XPTTM 650V IGBT IXYN120N65C3D1 IC110 = 100A GenX3TM w/ Diode   VCE(sat)    2.8V     tfi(typ) = 46ns Extreme Light Punch through IGBT for 20-60kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E  VCES TJ = 25°C to 175°C 650 V G VCGR TJ =

1.22. ixyp20n65c3d1.pdf Size:250K _igbt_a

20N65
20N65

XPTTM 650V IGBT VCES = 650V IXYA20N65C3D1 GenX3TM w/Diode IC110 = 20A IXYP20N65C3D1   VCE(sat)    2.50V     tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings E VCES TJ = 25°C to 175°C 650 V C (Tab) VCGR TJ = 25°C to 175°C, RGE = 1M

1.23. ixyp20n65c3d1m.pdf Size:195K _igbt_a

20N65
20N65

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP20N65C3D1M GenX3TM w/Diode IC110 = 9A   VCE(sat)    2.5V     tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol Test Conditions Maximum Ratings OVERMOLDED TO-220 VCES TJ = 25°C to 175°C 650 V VCGR TJ = 25°C to 175°C, RGE =

1.24. ixyh20n65c3.pdf Size:257K _igbt_a

20N65
20N65

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYA20N65C3 GenX3TM IC110 = 20A IXYH20N65C3   VCE(sat)    2.50V     tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-263 AA (IXYA) Symbol Test Conditions Maximum Ratings G E VCES TJ = 25°C to 175°C 650 V C (Tab) VCGR TJ = 25°C

1.25. ixya20n65c3.pdf Size:257K _igbt_a

20N65
20N65

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYA20N65C3 GenX3TM IC110 = 20A IXYH20N65C3   VCE(sat)    2.50V     tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-263 AA (IXYA) Symbol Test Conditions Maximum Ratings G E VCES TJ = 25°C to 175°C 650 V C (Tab) VCGR TJ = 25°C

1.26. ixya20n65c3d1.pdf Size:250K _igbt_a

20N65
20N65

XPTTM 650V IGBT VCES = 650V IXYA20N65C3D1 GenX3TM w/Diode IC110 = 20A IXYP20N65C3D1   VCE(sat)    2.50V     tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings E VCES TJ = 25°C to 175°C 650 V C (Tab) VCGR TJ = 25°C to 175°C, RGE = 1M

1.27. ikp20n65h5.pdf Size:2212K _igbt_a

20N65
20N65

IGBT High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti parallel diode IKP20N65H5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet Industrial Power Control IKP20N65H5 High speed switching series fifth generation High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti parallel diod

1.28. ixyh120n65b3.pdf Size:232K _igbt_a

20N65
20N65

Advance Technical Information VCES = 650V XPTTM 650V IGBT IXYH120N65B3 IC110 = 120A GenX3TM   VCE(sat)    1.90V     tfi(typ) = 107ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 650 V G VCGR TJ = 25°C to 175°C, RGE = 1M 650 V C T

1.29. ixyp20n65b3.pdf Size:273K _igbt_a

20N65
20N65

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYA20N65B3 GenX3TM IC110 = 20A IXYP20N65B3   VCE(sat)    2.10V     IXYH20N65B3 tfi(typ) = 87ns Extreme Light Punch Through IGBT for 5-30kHz Switching TO-263 (IXYA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXYP) VCES TJ = 25°C to 175°C 650

1.30. ixyh20n65b3.pdf Size:273K _igbt_a

20N65
20N65

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYA20N65B3 GenX3TM IC110 = 20A IXYP20N65B3   VCE(sat)    2.10V     IXYH20N65B3 tfi(typ) = 87ns Extreme Light Punch Through IGBT for 5-30kHz Switching TO-263 (IXYA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXYP) VCES TJ = 25°C to 175°C 650

1.31. ixyh120n65c3.pdf Size:233K _igbt_a

20N65
20N65

Advance Technical Information VCES = 650V XPTTM 650V IGBT IXYH120N65C3 IC110 = 120A GenX3TM   VCE(sat)    2.8V     tfi(typ) = 46ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 650 V G VCGR TJ = 25°C to 175°C, RGE = 1M 650 V C Tab

1.32. cs20n65f a9h.pdf Size:431K _crhj

20N65
20N65

Silicon N-Channel Power MOSFET R ○ CS20N65F A9H VDSS 650 V General Description: ID 20 A CS20N65F A9H, the silicon N-channel Enhanced PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.37 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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