4N65 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 4N65 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 106 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 100 nS
Cossⓘ - Capacitancia de salida: 70 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm
Encapsulados: TO-220 TO-262 TO-263 TO-251 TO-252 TO-220F DFN-8
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4N65 datasheet
4n65.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications includi
4n65.pdf
isc N-Channel MOSFET Transistor 4N65 DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high efficiency switch mode power supply. ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE UNIT V Drain-S
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STB24N65M2, STF24N65M2, STP24N65M2 N-channel 650 V, 0.185 typ., 16 A MDmesh M2 Power MOSFET in D2PAK, TO-220FP and TO-220 packages Datasheet - production data Features Order codes V R max I DS DS(on) D STB24N65M2 STF24N65M2 650 V 0.23 16 A STP24N65M2 Extremely low gate charge Excellent output capacitance (C ) profile oss 100% avalanche tested Ze
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stl34n65m5.pdf
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tk14n65w.pdf
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tk14n65w5.pdf
TK14N65W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK14N65W5 TK14N65W5 TK14N65W5 TK14N65W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 100 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.25 (typ.) by using Super Junction Struc
sihg64n65e.pdf
SiHG64N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.047 Reduced switching and conduction losses Qg max. (nC) 369 Ultra low gate charge (Qg) Qgs (nC) 66 Qgd (nC) 93 Avalanche energy rated (UIS) Co
dmg4n65ct.pdf
DMG4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(ON) Package High BVDss rating for power application TC = 25 C Low Input/Output Leakage 650V 3.0 @VGS = 10V TO220-3 4.0 A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q
dmg4n65cti.pdf
DMG4N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(ON) Package High BVDss rating for power application TC = 25 C Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 650V 3.0 @VGS = 10V ITO220-3 4.0 A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC
ixta4n65x2 ixtp4n65x2 ixty4n65x2.pdf
Preliminary Technical Information X2-Class VDSS = 650V IXTY4N65X2 Power MOSFET ID25 = 4A IXTA4N65X2 RDS(on) 850m IXTP4N65X2 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V TO-263 (IXTA) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G
ixth64n65x.pdf
Preliminary Technical Information X-Class VDSS = 650V IXTH64N65X Power MOSFET ID25 = 64A RDS(on) 51m N-Channel Enhancement Mode TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G D Tab VGSM Transient 40 V S ID25 TC = 25 C64
ixty4n65x2 ixta4n65x2 ixtp4n65x2.pdf
X2-Class VDSS = 650V IXTY4N65X2 Power MOSFET ID25 = 4A IXTA4N65X2 RDS(on) 850m IXTP4N65X2 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V TO-263 (IXTA) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G VGSM Transient 40 V S ID25 TC
ixfp34n65x2m.pdf
Preliminary Technical Information X2-Class HiperFETTM VDSS = 650V IXFP34N65X2M Power MOSFET ID25 = 34A RDS(on) 100m (Electrically Isolated Tab) N-Channel Enhancement Mode OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V G Isolated Tab D VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS Contin
ixfp34n65x2 ixfh34n65x2.pdf
X2-Class HiPerFETTM VDSS = 650V IXFP34N65X2 Power MOSFET ID25 = 34A IXFH34N65X2 RDS(on) 100m N-Channel Enhancement Mode Avalanche Rated TO-220 (IXFP) Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25 C to 150 C 650 V S D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V TO-247 VGSS Continuous 30 V (IXFH) VGSM Transien
ixfa34n65x2 ixfp34n65x2 ixfh34n65x2.pdf
X2-Class HiPerFETTM VDSS = 650V IXFA34N65X2 Power MOSFET ID25 = 34A IXFP34N65X2 RDS(on) 100m IXFH34N65X2 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGS
ixtp24n65x2m.pdf
Advance Technical Information X2-Class VDSS = 650V IXTP24N65X2M Power MOSFET ID25 = 8.5A RDS(on) 145m (Electrically Isolated Tab) N-Channel Enhancement Mode OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V G D S VGSS Continuous 30 V VGSM Transient
ixth34n65x2.pdf
Advance Technical Information X2-Class VDSS = 650V IXTH34N65X2 Power MOSFET ID25 = 34A RDS(on) 105m N-Channel Enhancement Mode Avalanche Rated TO-247 G D Symbol Test Conditions Maximum Ratings S D (Tab) VDSS TJ = 25 C to 150 C 650 V G = Gate D = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S = Source Tab = Drain VGSS Contin
ixtp34n65x2 ixth34n65x2.pdf
X2-Class VDSS = 650V IXTP34N65X2 Power MOSFET ID25 = 34A IXTH34N65X2 RDS(on) 96m N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 650 V D S D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V TO-247 VGSS Continuous 30 V (IXTH) VGSM Transient 40 V ID
4n65kl-ta3-t 4n65kg-ta3-t 4n65kl-tf1-t 4n65kg-tf1-t 4n65kl-tf2-t 4n65kg-tf2-t 4n65kl-tf3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-TC Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications
4n65z.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65Z Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate 1 charge, low on-state resistance and have a high rugged avalanche TO-220F characteristic. This power MOSFET is usually used in high speed switching applicat
4n65kl-tm3-t 4n65kg-tm3-t 4n65kl-tms2-t 4n65kg-tms2-t 4n65kl-tn3-r 4n65kg-tn3-r 4n65kg-tf3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-TC Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications
4n65kl-tms-t 4n65kg-tms-t 4n65kl-tms2-t 4n65kg-tms2-t 4n65kl-tms4-t 4n65kg-tms4-t 4n65kl-tn3-r 4n65kg-tn3-r 4n65kl-tnd-r 4n65kg-tnd-r 4n65kl-t2q-t 4n65kg-t2q-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-MT Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applicatio
4n65l-ta3-t 4n65g-ta3-t 4n65l-tf1-t 4n65g-tf1-t 4n65l-tf2-t 4n65g-tf2-t 4n65l-tf3-t 4n65g-tf3-t 4n65l-tf3t-t 4n65g-tf3t-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications inclu
4n65kl-tf3t-t 4n65kg-tf3t-t 4n65kl-tm3-t 4n65kg-tm3-t 4n65kl-tms2-t 4n65kg-tms2-t 4n65kl-tn3-r 4n65kg-tn3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-TC Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications
4n65kg-tm3-t 4n65kl-tms-t 4n65kg-tms-t 4n65kl-tms2-t 4n65kg-tms2-t 4n65kl-tms4-t 4n65kg-tms4-t 4n65kl-tn3-r 4n65kg-tn3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-TA Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TA is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applicatio
4n65kl-ta3-t 4n65kg-ta3-t 4n65kl-tf1-t 4n65kg-tf1-t 4n65kl-tf2-t 4n65kg-tf2-t 4n65kl-tf3-t 4n65kg-tf3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-TC Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications
4n65l-t2q-t 4n65g-t2q-t 4n65l-tq2-r 4n65g-tq2-r 4n65l-tq2-t 4n65g-tq2-t 4n65g-e-k08-5060-r 4n65l-tm3-t 4n65g-tm3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications inclu
4n65l-tms-t 4n65g-tms-t 4n65l-tms2-t 4n65g-tms2-t 4n65l-tms4-t 4n65g-tms4-t 4n65l-tn3-r 4n65g-tn3-r 4n65l-tnd-r 4n65g-tnd-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications inclu
4n65kl-tf3-t 4n65kg-tf3-t 4n65kl-tf1-t 4n65kg-tf1-t 4n65kl-tf2-t 4n65kg-tf2-t 4n65kg-t2q-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220F1 DESCRIPTION The UTC 4N65K is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high 1 rugged avalanche characteristic. This power MOSFET is 1 usually used in high spee
4n65l-tq2-r 4n65g-tq2-r 4n65l-tq2-t 4n65g-tq2-t 4n65g-k08-5060-r 4n65g-k08-5060-r 4n65l-t2q-t 4n65g-t2q-t 4n65l-tm3-t 4n65g-tm3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications inclu
4n65k.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications includi
4n65kl-ta3-t 4n65kg-ta3-t 4n65kl-tf3-t 4n65kg-tf3-t 4n65kl-tf1-t 4n65kg-tf1-t 4n65kl-tf2-t 4n65kg-tf2-t 4n65kl-tf3t-t 4n65kg-tf3t-t 4n65kl-tm3-t 4n65kg-tm3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-MT Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applicatio
4n65kl-ta3-t 4n65kg-ta3-t 4n65kl-tf3-t 4n65kg-tf3-t 4n65kl-tf1-t 4n65kg-tf1-t 4n65kl-tf2-t 4n65kg-tf2-t 4n65kl-tf3t-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-TA Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TA is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applicatio
4n65kl-tf3t-t 4n65kg-tf3t-t 4n65kl-tm3-t 4n65kg-tm3-t 4n65kl-tn3-r 4n65kg-tn3-r 4n65kl-t2q-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220F1 DESCRIPTION The UTC 4N65K is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high 1 rugged avalanche characteristic. This power MOSFET is 1 usually used in high spee
4n65kl-t2q-t 4n65kg-t2q-t 4n65kl-t60-k 4n65kg-t60-k 4n65kl-tnd-r 4n65kg-tnd-r 4n65kg-tf3t-t 4n65kl-tm3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-TA Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TA is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applicatio
ssd04n65.pdf
SSD04N65 4A , 650V , RDS(ON) 2.6 N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD04N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter a
cju04n65a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU04N65A N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi
cjb04n65 cjb04n65a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate MOSFETS CJB04N65A N-Channel Power MOSFET TO-263-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi
cjd04n65.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N65 N-Channel Power MOSFET TO-251S GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high spe
cjpf04n65a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N65A N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high
cjp04n65 cjp04n65a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP04N65A N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi
cjd04n65a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate MOSFETS CJD04N65A N-Channel Power MOSFET TO-251-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi
cju04n65.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU04N65 N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hig
cjpf04n65.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N65 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high s
kf4n65fm.pdf
KF4N65FM SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS _ A 10.16 0.2 + correction and switching mode power suppli
kf4n65p f.pdf
KF4N65P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF4N65P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G correction and switching mode power suppli
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APT94N65B2C6 APT94N65LC6 650V 94A 0.035 APT94N65B2C6 Super Junction MOSFET T-Max TO-264 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated APT94N65LC6 Extreme dv/dt Rated D G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with S two parallel MOSFET die. I
apt94n65b2c3g.pdf
650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Power Semiconductors Super Junction MOSFET T-MaxTM Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated D Extreme dv/dt Rated Dual die (parallel) G Popular T-MAX Package S Unless stated otherwise, Microsemi di
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CED04N65/CEU04N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 3.2A, RDS(ON) = 2.8 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc
cep04n65 ceb04n65 cef04n65.pdf
CEP04N65/CEB04N65 CEF04N65 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP04N65 650V 2.8 4A 10V CEB04N65 650V 2.8 4A 10V CEF04N65 650V 2.8 4A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SER
h04n65.pdf
Spec. No. MOS200802 HI-SINCERITY Issued Date 2008.07.22 Revised Date 2009.03.23 MICROELECTRONICS CORP. Page No. 1/6 H04N65 Series Pin Assignment H04N65 Series Tab 3-Lead Plastic TO-220AB N-Channel Power Field Effect Transistor (650V, 4A) Package Code E Pin 1 Gate Pin 2 & Tab Drain Pin 3 Source Description 3 2 1 This advanced high voltage MOSFET is d
ftu04n65c ftd04n65c.pdf
FTU04N65C/FTD04N65C Doc. NO QRD-310 650V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features Low ON Resistance 650V 2.6 4.0A Low Gate Charge Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free D Halogen-free available Applications High Efficiency SMPS G G Adaptor/Charger D S Active PFC G S D LCD
sif4n65d 2.pdf
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N65D N- MOS / N-CHANNEL POWER MOSFET SIF4N65D N- MOS / N-CHANN
sif4n65c 2.pdf
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N65C N- MOS / N-CHANNEL POWER MOSFET SIF4N65C N- MOS / N-CHANN
sif4n65c.pdf
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N65C N- MOS / N-CHANNEL POWER MOSFET SIF4N65C N- MOS / N-CHANN
sif4n65d.pdf
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N65D N- MOS / N-CHANNEL POWER MOSFET SIF4N65D N- MOS / N-CHANN
jcs4n65vb jcs4n65rb jcs4n65cb jcs4n65fb.pdf
N R N-CHANNEL MOSFET JCS4N65B Package MAIN CHARACTERISTICS 4.0 A ID 650 V VDSS Rdson 2.5 @Vgs=10V 13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS
jcs4n65f jcs4n65v jcs4n65r jcs4n65b jcs4n65m jcs4n65mf.pdf
R JCS4N65E JCS4N65E MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson_max 2.5 Vgs=10V Qg-typ 11.9nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low gate
jcs4n65vb jcs4n65rb jcs4n65bb jcs4n65sb jcs4n65cb jcs4n65fb.pdf
N R N-CHANNEL MOSFET JCS4N65B Package MAIN CHARACTERISTICS ID 4.0 A VDSS 650 V Rdson Vgs=10V 2.4 -Max Qg-Typ 16.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UP
jcs4n65v jcs4n65r jcs4n65c jcs4n65f jcs4n65b jcs4n65m jcs4n65mf.pdf
R JCS4N65C JCS4N65C MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson_ Typ 2.1 Vgs=1 Max 2.6 0V Qg-typ 14nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low g
mtn4n65f3.pdf
Spec. No. C797F3 Issued Date 2015.03.06 CYStech Electronics Corp. Revised Date Page No. 1/ 11 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 3 (typ.) MTN4N65F3 ID 4A Features Low On Resistance Simple Drive Requirement Fast Switching Characteristic Pb-free lead plating and RoHS compliant package Applications Adapter
mtn4n65fp.pdf
Spec. No. C797FP Issued Date 2010.06.09 CYStech Electronics Corp. Revised Date 2014.07.28 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 3 (typ.) MTN4N65FP ID 4A Description The MTN4N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-
mtn4n65i3.pdf
Spec. No. C797I3 Issued Date 2010.03.29 CYStech Electronics Corp. Revised Date 2013.10.18 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 3.0 (typ.) MTN4N65I3 ID 4A Description The MTN4N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
mtn4n65j3.pdf
Spec. No. C797J3 Issued Date 2011.09.14 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 3.0 (typ.) MTN4N65J3 ID 4A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package
g4n65.pdf
GOFORD G4N65 Description Features VDSS RDS(ON) ID @ 10V (typ) 4.5 A 650V 1.95 Fast switching 100% avalanche tested To-251 To-252 Improved dv/dt capability Application DC Motor Control and Class D Amplifier Uninterruptible Power Supply (UPS) Automotive Absolute Maximum Ratings TC=25 unless otherwise specified Max. Symbol Paramet
sdf04n65 sdp04n65.pdf
SDP04N65 SDF04N65 a S mHop Microelectronics C orp. Ver 2.2 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Typ Rugged and reliable. 650V 4A 2.3 @ VGS=10V TO-220 and TO-220F Package. D G G D S G D S SDP SERIES SDF SERIES TO-220 TO-220F S ORDERING INFORMATION Ordering Code Package Mar
sdu04n65 sdd04n65.pdf
Green SDU/D04N65 Product SamHop Microelectronics corp. Ver 2.3 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Typ Rugged and reliable. 650V 4A 2.5 @VGS=10V Suface Mount Package. D G S SDU SERIES SDD SERIES SDD SERIES TO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK) ORDERING IN
cs4n65 to-251 252.pdf
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-251/TO-252 Plastic-Encapsulate Transistors 4N65 MOSFET(N-Channel) FEATURES Robust High Voltage Terminrtion Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterrized for Use in Bridge Circuits
ftp04n65 fta04n65.pdf
FTP04N65 FTA04N65 N-Channel MOSFET Applications VDSS RDS(ON) (Max.) ID Adaptor 650V 2.2 4.0A Charger SMPS Standby Power LCD Panel Power Features D Lead Free Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve G G D G Inductive Switching Curves S D S Ordering Information TO-220 TO-220F S Not to Scale PART NUMBER
brcs4n65aa.pdf
BRCS4N65AA Rev.D Nov.-2017 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-262 Plastic Package.. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effici
brfl4n65s.pdf
BRFL4N65S Rev.A Dec.-2023 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features Low gate charge, low crss, fast switching,Have good Electromagnetic Interference porformance. / Applications
brf4n65.pdf
BRF4N65 Rev.F Aug.-2017 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficien
bra4n65.pdf
BRA4N65(BRCS4N65A) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package.. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high
bri4n65.pdf
BRI4N65(BRCS4N65I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high ef
brd4n65.pdf
BRD4N65 Rev.F Aug.-2017 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications These devices are well suited for po
brd4n65s.pdf
BRD4N65S Rev.A Dec.-2023 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features , , , Low gate charge, low crss, fast switching,HF Product. Have good Electromagnetic Interference porfo
hfp4n65.pdf
Shantou Huashan Electronic Devices Co., Ltd. HFP4N65 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan
cs4n65 a3r.pdf
Silicon N-Channel Power MOSFET R CS4N65 A3R General Description VDSS 650 V CS4N65 A3R, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs4n65 a3hd.pdf
Silicon N-Channel Power MOSFET R CS4N65 A3HD General Description VDSS 650 V CS4N65 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs4n65 a3tdy.pdf
Silicon N-Channel Power MOSFET R CS4N65 A3TDY General Description VDSS 650 V CS4N65 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs4n65 a4r.pdf
Silicon N-Channel Power MOSFET R CS4N65 A4R General Description VDSS 650 V CS4N65 A4R, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs4n65 a3hdy.pdf
Silicon N-Channel Power MOSFET R CS4N65 A3HDY General Description VDSS 650 V CS4N65 A3HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs4n65 a4hdy.pdf
Silicon N-Channel Power MOSFET R CS4N65 A4HDY General Description VDSS 650 V CS4N65 A4HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cr4n65a4k.pdf
Silicon N-Channel Power MOSFET CR4N65 A4K General Description VDSS 650 V CR4N65 A4K, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching
cr4n65fa9k.pdf
Silicon N-Channel Power MOSFET CR4N65F A9K General Description VDSS 650 V CR4N65F A9K, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switchi
cs4n65f a9r.pdf
Silicon N-Channel Power MOSFET R CS4N65F A9R General Description VDSS 650 V CS4N65F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs4n65 a8hd.pdf
Silicon N-Channel Power MOSFET R CS4N65 A8HD 0General Description VDSS 650 V CS4N65 A8HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs4n65 a4tdy.pdf
Silicon N-Channel Power MOSFET R CS4N65 A4TDY General Description VDSS 650 V CS4N65 A4TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
cm4n65c.pdf
R CM4N65C www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LD E 2 TO-251 TO-25
ftk4n65p f d i.pdf
SEMICONDUCTOR FTK4N65P/F/I/D TECHNICAL DATA 4 Amps, 650 Volt Power MOSFET N-CHANNEL POWER MOSFET I 1 TO - 251 D DESCRIPTION 1 TO - 252 The FTK4N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche P characteristics. This power MOSFET is usually used
fir4n65afg.pdf
FIR4N65AFG 650V N-Channel MOSFET PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=13.7nC (Typ.). BVDSS=650V,ID=4A G D S RDS(on) 2.6 (Max) @VG=10V 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assemb
14n65.pdf
14N65 14A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 650V planar technology which reduce the conduction loss, improve switching I = 14.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) =0.6 2 Features Fast switching ESD impr
b4n65.pdf
B4N65 4A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 650V planar technology which reduce the conduction loss, improve switching I = 4.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) = 2.0 2 Features Fast switching ESD impro
f14n65.pdf
F14N65 14A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 650V planar technology which reduce the conduction loss, improve switching I = 14.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP)
f4n65.pdf
F4N65 4A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 650V planar technology which reduce the conduction loss, improve switching I = 4.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP) = 2
d4n65.pdf
D4N65 4A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 650V planar technology which reduce the conduction loss, improve switching I = 4.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) = 2.4 2 Features Fast switching ESD impro
ndt4n65.pdf
SMD Type MOSFET N-Channel Enhancement MOSFET NDT4N65 (KDT4N65) Features TO-252 Unit mm VDS (V) = 650V +0.15 6.50 -0.15 +0.1 2.30 -0.1 ID = 3.0 A (VGS = 10V) +0.2 5.30 -0.2 +0.8 0.50 -0.7 RDS(ON) 3 (VGS = 10V) D 0.127 +0.1 0.80 -0.1 max G +0.1 1 GATE 2.3 0.60-0.1 S +0.15 4.60 -0.15 2 DRAIN 3 SOURCE Absolute Maximum Ratings Ta = 25 P
svs14n65fjd2 svs14n65fd2 svs14n65td2 svs14n65sd2 svs14n65sd2tr.pdf
SVS14N65FJ(F)(T)(S)D2 14A, 650V MOS 2 1 SVS14N65FJ/F/T/SD2 N MOSFET 3 1 TO-263-2L MOS 3 1. 2. 3. SVS14N65FJ/
svf4n65.pdf
SVF4N65T/F(G)/M_Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior
svf4n65rd svf4n65rm svf4n65rmj svf4n65rf svf4n65rt.pdf
SVF4N65RD/M/MJ/F/T 4A 650V N 2 SVF4N65RD/M/MJ/F/T N MOS F-CellTM VDMOS 1 1 3 TO-252-2L 3
svf4n65caf svf4n65cad svf4n65cam svf4n65camj svf4n65camn svf4n65cak.pdf
SVF4N65CAF/D/M/MJ/MN/K 4A 650V N 2 SVF4N65CAF/D/M/MJ/MN/K N MOS 1 F-CellTM VDMOS 3 1. 2. 3
svf4n65t svf4n65f svf4n65mj svf4n65m svf4n65m svf4n65d svf4n65dtr svf4n65k.pdf
svd4n65t svd4n65f.pdf
SVD4N65T/SVD4N65F 4A 650V N 2 SVD4N65T/F N MOS S-RinTM VDMOS 1 3 1. 2. 3. AC-DC DC-DC H PMW 1 1 2 2 3 3 TO-220F-3L TO-220-3L 4A 650V RDS(on) =2.3 @VGS=10V dv/dt
svf4n65caf svf4n65cadtr svf4n65cam svf4n65camj svf4n65camn svf4n65cak.pdf
SVF4N65CAF/D/M/MJ/MN/K 4A 650V N 2 SVF4N65CAF/D/M/MJ/MN/K N MOS F-CellTM VDMOS 1 3 1.
svf4n65t svf4n65f svf4n65m svf4n65mj svf4n65d svf4n65k.pdf
SVF4N65T/F/M/MJ/D/K 4A 650V N 2 SVF4N65T/F/M/MJ/D/K N MOS 1 2 3 F-CellTM VDMOS TO-251J-3L 1 3
mdfs4n65dth.pdf
MDFS4N65D N-Channel MOSFET 650V, 4.0A, 2.55 General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChip s MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.55 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Spe
mdf4n65bth.pdf
MDF4N65B N-Channel MOSFET 650V, 4.0A, 2.2 General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChip s MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.2 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed
mdis4n65bth.pdf
MDIS4N65B N-Channel MOSFET 650V, 3.65A, 2.2 General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChip s MOSFET Technology, which provides low on- ID = 3.65A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.2 @ VGS = 10V quality. Applications These devices are suitable device for
msf4n65.pdf
MSF4N65 650V N-Channel MOSFET Description The MSF4N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design 100% EAS Test
ms4n65.pdf
Bruckewell Technology Corp., Ltd. http //www.bruckewell-semi.com Product Specification N-Channel Enhancement Mode Power MOSFET MS4N65 Description The MS4N65 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred
ru4n65p.pdf
RU4N65P N-Channel Advanced Power MOSFET Features Pin Description 650V/4A, RDS (ON) =2200m (Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant) GD S TO220F D D D D D Applications D pp D AC/DC Power Conversion i
bl4n65-p bl4n65-a bl4n65-u bl4n65-d.pdf
BL4N65 Power MOSFET 1 Description Step-Down Converter BL4N65, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Param
bl4n65a-p bl4n65a-a bl4n65a-u bl4n65a-d.pdf
BL4N65A Power MOSFET 1 Description Step-Down Converter BL4N65A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par
fhu4n65d fhd4n65d fhp4n65d fhf4n65d.pdf
N N-CHANNEL MOSFET FHU4N65D/FHD4N65D/FHP4N65D/FHF4N65D MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 2.4 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested
fhu4n65a fhp4n65a fhd4n65a fhf4n65a.pdf
N N-CHANNEL MOSFET FHU4N65A/FHP4N65A/FHD4N65A/FHF4N65A MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 1.9 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested
fhu4n65e fhd4n65e fhp4n65e fhf4n65e.pdf
N N-CHANNEL MOSFET FHU4N65E/FHD4N65E/FHP4N65E/FHF4N65E MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650 V Crss ( 4.5pF) Low Crss (typical 4.5pF ) Rdson-typ @Vgs=10V 2.1 Fast switching Qg-typ 18nC 100% 100% avalanche tested dv
hy4n65d.pdf
SINGLE FIG.SINGLE CURVE FIG. 2 NON- T1 FORWARD CURRENT AMBIENT 1 2MAXIMUM5 10 1 25 50 PHASE HALF WAVE 60Hz ( ) 150 175 0.00 0.2 0.4 0.6 4 TEMPERATURE DERATING 100 75 10 20 100 125 HY4N65D / HY4N65M 650V / 4A 650V, RDS(ON)=2.8W@VGS=10V, ID=2A N-Channel Enhancement Mode MOSFET Features TO-252 TO-251 Low On-State Resistance Fast Switching Low Gate Cha
hy4n65t.pdf
HY4N65T / HY4N65FT 650V / 4A 650V, RDS(ON)=2.8W@VGS=10V, ID=2A N-Channel Enhancement Mode MOSFET Features TO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1 1
kia4n65h.pdf
4.0A650V N-CHANNELMOSFET 4N65H KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Description This Power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes
cs4n65f.pdf
BRF4N65(CS4N65F) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25
slf4n65sv.pdf
SLF4N65SV 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced 4A*, 650V, RDS(on),typ =2.38 planar stripe DMOS technology. This advanced technology Low gate charge (Qg,typ = 13nC) has been especially tailored to minimize conduction loss, pro- Fast switching vide superior switching performance, and withstand high en-
psu04n65b psd04n65b.pdf
PSU04N65B PSD04N65B 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 650V 1.9 4.0A RDS(ON),typ.=1.9 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor G G Charger D D S SMPS Standby Power S TO-251 TO-252 Ordering Information Part Number Package Br
psa04n65b.pdf
PSA04N65B 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 650V 1.9 4.0A RDS(ON),typ.=1.9 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger SMPS Standby Power G D S Ordering Information TO-220F Part Number Package Brand Package No to Scale PSA0
swf4n65k2 swn4n65k2 swd4n65k2.pdf
SW4N65K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features BVDSS 650V TO-220F TO-251N TO-252 ID 4 A High ruggedness Low RDS(ON) (Typ 1.10 )@VGS=10V RDS(ON) 1.10 Low Gate Charge (Typ 7.1nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 Application LED, Charger, Adaptor 2 2 3 3 3 1 1. Gate 2
sw4n65k.pdf
SAMWIN SW4N65K N-channel TO-220F/I-PAK/D-PAK MOSFET BVDSS 650V Features TO-220F TO-251 TO-252 ID 4A High ruggedness RDS(ON) 1.25 RDS(ON) (Max 1.25 )@VGS=10V Gate Charge (Typ 13nC) Improved dv/dt Capability 1 1 1 2 2 100% Avalanche Tested 2 2 3 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced
swf4n65k swi4n65k swd4n65k.pdf
SW4N65K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS 650V High ruggedness ID 4A Low RDS(ON) (Typ 1 )@VGS=10V Low Gate Charge (Typ13 nC) RDS(ON) 1 Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 Application Adapter,LED,Charger, 2 2 2 3 3 3 TV-Power 1 1. Gate 2. Drain 3. Sour
swi4n65db.pdf
SW4N65DB N-channel Enhanced mode TO-251 MOSFET TO-251 BVDSS 650V Features ID 4A High ruggedness RDS(ON) 1.7 Low RDS(ON) (Typ 1.7 )@VGS=10V Low Gate Charge (Typ 20nC) 2 Improved dv/dt Capability 1 2 100% Avalanche Tested 3 Application LED, Charger, Adaptor 1. Gate 2. Drain 3. Source 1 3 General Description This power MO
sw4n65d.pdf
SAMWIN SW4N65D N-channel TO-220F/TO-251N/TO-252/TO-251S MOSFET BVDSS 650V Features TO-220F TO-251N TO-252 TO-251S ID 4A High ruggedness RDS(ON) 2.6 RDS(ON) (Max 2.6 )@VGS=10V Gate Charge (Typ 18nC) Improved dv/dt Capability 1 1 1 2 100% Avalanche Tested 2 3 1 3 2 2 3 3 2 1. Gate 2. Drain 3. Source General Description 1 Thi
sw4n65b.pdf
SW4N65B SW4N65B SAMWIN N-channel MOSFET TO-220F Features BVDSS 650V ID 4.0A High ruggedness RDS(ON) (Max 2.7 )@VGS=10V RDS(ON) 2.7ohm Gate Charge (Typical 11nC) Improved dv/dt Capability 1 2 2 100% Avalanche Tested 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. 3 This tec
swi4n65dc swnc4n65dc.pdf
SW4N65DC N-channel Enhanced mode TO-251/TO-251N-S2 MOSFET TO-251 TO-251N-S2 BVDSS 650V Features ID 4A High ruggedness RDS(ON) 1.95 Low RDS(ON) (Typ 1.95 )@VGS=10V Low Gate Charge (Typ 17nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 1 2 3 3 Application Charger,TV-POWER 1. Gate 2. Drain 3. Source 3 Gener
swn4n65dd swnc4n65dd swf4n65dd swmn4n65dd swd4n65dd swyn4n65dd.pdf
SW4N65DD N-channel Enhanced mode TO-251N/TO-251N-S2/TO-220F/TO-220SF /TO-252/TO-220FTN MOSFET Features TO251N TO251N-S2 TO220F TO220SF TO252 TO220FTN BVDSS 650V High ruggedness ID 4A Low RDS(ON) (Typ 2.4 )@VGS=10V RDS(ON) 2.4 Low Gate Charge (Typ 16nC) 1 Improved dv/dt Capability 2 1 1 1 2 1 1 3 2 100% Avalanche Tested 2
swf4n65da swn4n65da swd4n65da swnb4n65da.pdf
SW4N65DA N-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-251NX-S4 MOSFET Features BVDSS 650V TO-220F TO-251N TO-252 TO-251NX-S4 ID 4A High ruggedness Low RDS(ON) (Typ 3.35 )@VGS=10V RDS(ON) 3.35 Low Gate Charge (Typ 13nC) Improved dv/dt Capability D 1 100% Avalanche Tested 1 1 1 2 2 2 2 3 Application Charger, Adaptor, 3 3 3 LED, TV-Pow
sw4n65u.pdf
SAMWIN SW4N65U N-channel TO-220F /IPAK MOSFET TO-220F TO-251N Features BVDSS 650V ID 4.0A High ruggedness RDS(ON) (Max 2.6 )@VGS=10V RDS(ON) 2.6ohm Gate Charge (Typical 17nC) Improved dv/dt Capability 1 1 2 2 2 100% Avalanche Tested 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMO
swf4n65d swn4n65d swsi4n65d swmi4n65d swui4n65d swd4n65d sws4n65d swb4n65d swp4n65d swmqi4n65d.pdf
SW4N65D SW4N65D N-channel Enhanced mode TO-220F/TO-251N/TO-251S/TO-251M/TO-251U/ TO-252/SOT-82/TO-263 /TO-220/TO-251MQ MOSFET Features TO-220F TO-251M TO-251U TO-251N TO-251S BVDSS 650V High ruggedness ID 4A Low RDS(ON) (Typ 2 )@VGS=10V 1 1 1 1 1 2 2 2 Low Gate Charge (Typ 18nC) 2 RDS(ON) 2 3 2 3 3 3 3 Improved dv/d
srm4n65.pdf
Datasheet 4A, 650V, N-Channel Power MOSFET SRM4N65 General Description Symbol The Sanrise SRM4N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM4N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high
src4n65.pdf
Datasheet 4A, 650V, Super Junction N-Channel Power MOSFET SRC4N65 General Description Symbol The Sanrise SRC4N65 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance and fast switching time, making it especially suitable for applications which require superior power density and outstanding effic
sl4n65.pdf
SL4N65 N-CHANNEL MOSFET MAIN CHARACTERISTICS 4A I D 650V V DSS 2.6 R V =10V DS(ON) GS 18nC Q G APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge LED LED power supplies FEATURES 1 Gate Low
sl4n65f sl4n65i sl4n65d.pdf
SL4N65 N-CHANNEL MOSFET MAIN CHARACTERISTICS 4A I D 650V V DSS 2.6 R V =10V DS(ON) GS 18nC Q G APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge LED LED power supplies FEATURES 1 Gate Low
tmp4n65az tmpf4n65az.pdf
TMP4N65AZ(G)/TMPF4N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A
tmd4n65az tmu4n65az.pdf
TMD4N65AZ(G)/TMU4N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A
tmp4n65 tmpf4n65.pdf
TMP4N65(G)/TMPF4N65(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A
tmd4n65z tmu4n65z.pdf
TMD4N65Z(G)/TMU4N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A
tmp4n65z tmpf4n65z.pdf
TMP4N65Z(G)/TMPF4N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A
qm04n65b.pdf
QM04N65B 1 2011-03-14 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM04N65B is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 2.6 4A most of the synchronous buck converter applications . Applications The QM04N65B meet the RoHS and G
qm14n65f.pdf
QM14N65F 1 2011-07-22 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM14N65F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 0.65 14A most of the synchronous buck converter applications . Applications The QM14N65F meet the RoHS an
qm04n65d.pdf
QM04N65D 1 2011-03-14 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM04N65D is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 2.6 4A most of the synchronous buck converter applications . Applications The QM04N65D meet the RoHS and G
qm04n65f1.pdf
QM04N65F1 1 2011-11-25 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM04N65F1 is the highest performance N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 650V 2.6 4A for most of the synchronous buck converter applications . Applications The QM04N65F1 meet the RoHS an
qm04n65f.pdf
QM04N65F 1 2011-03-14 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM04N65F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 2.6 4A most of the synchronous buck converter applications . Applications The QM04N65F meet the RoHS and G
wml14n65c4 wmk14n65c4 wmm14n65c4 wmn14n65c4 wmp14n65c4 wmo14n65c4.pdf
WML1 MM14N65C 14N65C4, WMK14N65C4, WM C4 WMN14N65C4, WMP14N65C4, WM C4 MO14N65C 650V n Power MOSFET V 0.33 Super Junction Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM C4
wmaa4n65d1b wmk4n65d1b wml4n65d1b wmo4n65d1b.pdf
WMAA4N65D1B WMK4N65D1B WML4N65D1B WMO4N65D1B 650V 4A 2.2 N-ch Power MOSFET Description TO-220F TO-220 WMOSTM D1 is Wayon s 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power G G density and high efficiency. And it is very D D S S robust and RoHS compliant. TO-252 TO-251-L9.4 TAB Featur
cs4n65a4tdy.pdf
Silicon N-Channel Power MOSFET R CS4N65 A4TDY General Description VDSS 650 V CS4N65 A4TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
cs4n65a4hdy.pdf
Silicon N-Channel Power MOSFET R CS4N65 A4HDY General Description VDSS 650 V CS4N65 A4HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs4n65a3hd.pdf
Silicon N-Channel Power MOSFET R CS4N65 A3HD General Description VDSS 650 V CS4N65 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs4n65fa9hd.pdf
Silicon N-Channel Power MOSFET R CS4N65F A9HD General Description VDSS 650 V CS4N65F A9HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
cs4n65a4r.pdf
Silicon N-Channel Power MOSFET R CS4N65 A4R General Description VDSS 650 V CS4N65 A4R, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs4n65a3hdy.pdf
Silicon N-Channel Power MOSFET R CS4N65 A3HDY General Description VDSS 650 V CS4N65 A3HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs4n65a3r.pdf
Silicon N-Channel Power MOSFET R CS4N65 A3R General Description VDSS 650 V CS4N65 A3R, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs4n65a8hd.pdf
Silicon N-Channel Power MOSFET R CS4N65 A8HD 0General Description VDSS 650 V CS4N65 A8HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs4n65a3hd1-g.pdf
Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS4N65 A3HD1-G General Description VDSS 650 V CS4N65 A3HD1-G, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transisto
cs4n65a3tdy.pdf
Silicon N-Channel Power MOSFET R CS4N65 A3TDY General Description VDSS 650 V CS4N65 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
atm4n65te.pdf
ATM4N65TE N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage 650V Continuous Drain Current 4A DESCRIPTION The ATM4N65TE is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching
dm4n65e.pdf
N MOS /N-Channel Power MOSFET DM4N65E RoHS FEATURES LOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY
cs4n65f cs4n65p cs4n65u cs4n65d.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. CS4N65F,CS4N65P,CS4N65U,CS4N65D 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS4N65F TO-220F
fir4n65lg.pdf
FIR4N65LG Advanced N-Ch Power MOSFET-H PIN Connection TO-252(D-PAK) General Description FIR4N65LG , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology D which reduce the conduction loss, improve switching G performance and enhance the avalanche energy. The transistor S can be used in various power switching circuit for system miniaturiz
fir4n65bpg.pdf
FIR4N65BPG Advanced N-Ch Power MOSFET PIN Connection TO-251(I-PAK) General Description FIR4N65BPGis an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state 1 2 3 resistance, pro
fir14n65fg.pdf
FIR14N65FG 14A, 650V N-CHANNEL MOSFET-E GENERAL DESCRIPTION PIN Connection TO-220F The FIR14N65FG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide
fir4n65fg.pdf
FIR4N65FG Advanced N-Ch Power MOSFET-H PIN Connection TO-220F General Description FIR4N65FG , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching G D S performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system g Schematic di
smf14n65.pdf
SMF14N65 650V N-Channnel MOSFET Features 14A, 650V, R =0.6 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Value
smd4n65.pdf
SMD4N65 650V N-Channnel MOSFET Features 4.0A, 650V, R =2.2 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Value
smf4n65.pdf
SMF4N65 650V N-Channnel MOSFET Features 4.0A, 650V, R =2.2 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Value
hsd4n65 hsu4n65 hsp4n65 hsf4n65.pdf
HS4N65 650V 4A N-Channel Planar MOSFET FEATURES General Description RDSON 3.0 @Vgs=10V, Id=2A HS4N65 is Fortunatus high voltage MOSFET family based on Ultra Low gate Charge(typical 13 nC) advanced planar stripe DMOS technology. This advanced Low Crss (typical 5pF) MOSFET family has optimized on-state resistance, and also Fast switching capability provides s
jmpc4n65bj.pdf
JMPC4N65BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 650V, 4A Load Switch RDS(ON)
jmpk4n65bj.pdf
JMPK4N65BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 650V, 4A Load Switch RDS(ON)
jmpf4n65bj.pdf
JMPF4N65BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 650V, 4A Load Switch RDS(ON)
lnc4n65 lnd4n65 lng4n65 lnh4n65 lnf4n65.pdf
LNC4N65 LND4N65 LNG4N65 LNH4N65 LNF4N65 Lonten N-channel 650V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planar VDMOS technology. The ID 4A resulting device has low conduction resistance, RDS(on),max 2.70 superior switching performance and high Qg,typ 12 nC avalance energy. Features Low RDS(on) Low gate
si4n65.pdf
N-CHANNEL MOSFET SI4N65 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 4.0A, 650V, RDS(on) = 3.0 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 15nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switching Fast s
d4n65.pdf
Jingdao Microelectronics co.LTD D4N65 4A, 650V N-CHANNEL POWER MOSFET TO-252W DESCRIPTION The D4N65 is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usu
ptp4n65 ptf4n65.pdf
PTP4 N65 /PTF4 N65 65 0V/4 A N-Channel A dv anced Power MOSFET Features RDS(on) (Typical 2.6 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150 C) G D S G D S TO-220 TO-220F Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Funct
sk04n65b.pdf
SK04N65B 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 650V 2.3 4.0A RDS(ON),typ.=2.3 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger SMPS Standby Power Ordering Information Part Number Package TO-251 SK04N65B TO-252 Absolute Maximum Ratings T =25 unless otherwise
spc4n65g.pdf
SPC4N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=4A(Vgs=10V) R max. at 25oC ( ) V =10V 2.4 DS(on) GS Ultra Low Gate Charge Q max. (nC) 24 g Improved dv/dt Capability Q (nC) 4 gs 100% Avalanche Tested Q (nC) 8 gd RoHS compliant Configuration single Appli
spe4n65g.pdf
SPE4N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=4A(Vgs=10V) R max. at 25oC ( ) V =10V 2.4 DS(on) GS Ultra Low Gate Charge Q max. (nC) 24 g Improved dv/dt Capability Q (nC) 4 gs 100% Avalanche Tested Q (nC) 8 gd RoHS compliant Configuration single Appli
wsr4n65f.pdf
WSR4N65F N-Ch MOSFET General Description Product Summery The WSR4N65F is the highest performance trench RDSON ID BVDSS N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most 650V 2.6 4A of the synchronous buck converter applications . Applications The WSR7N65F meet the RoHS and Green Product requirement , 100% EAS guaranteed
sed14n65g.pdf
SED14N65G N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =650V DS Voltage and Current Improved Shoot-Through R =300m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations
se4n65.pdf
Oct 2014 SE4N65 N-Channel Enhancement-Mode MOSFET Revision A General Description Features This series is a high voltage power MOSFET For a single MOSFET and is designed to have better characteristics, VDS = 650V such as fast switching time, low gate charge, RDS(ON) = 2.224 @ VGS=10V low on-state resistance and have a high rugged avalanche characteristics Pin c
vs4n65cd.pdf
VS4N65CD 650V/4A N-Channel Advanced Power MOSFET V DS 650 V Features R DS(on),TYP@ VGS=10 V 2.3 Enhancement mode I D 4 A Low on-resistance RDS(on) @ VGS=10 V TO-252 Fast Switching Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VS4N65CD TO-252 4N65CD 2500pcs/Reel Maximum ratings, at TA =25 C, unle
smirf4n65.pdf
SMIRF4N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 4A SMIRF4N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 2.8 (VGS=10V, ID=2A) on-state resistance, provide superior swi
vbzmb4n65.pdf
VBZMB4N65 www.VBsemi.com N-Channel (D-S) Power MOSFET 650V FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 2.5 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 1
hm4n65k hm4n65i.pdf
HM4N65K/HM4N65I HM4N65K / HM4N65I 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 4.0A, 650V, RDS(on) = 3.0 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 15nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superior switc
hm4n65r.pdf
HM4N65R General Description VDSS 650 V HM4N65R the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and
hm4n65 hm4n65f.pdf
HM4N65 / HM4N65F HM4N65 / HM4N65F 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 4.0A, 650V, RDS(on) = 3.0 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 15nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superior switch
mdt4n65.pdf
Silicon N-Channel Power MOSFET Description MDT4N65, This Power MOSFET is produced using Wisdom s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electroni
mpf4n65.pdf
Silicon N-Channel Power MOSFET Description The MPF4N65 uses advanced trench technology and design to provide excellent RDS(ON)with low gate charge. It can be used in a wide variety of applications. General Features V =4A I =650V DS D R =2 @V =10V,I =2A DS(on)(typ) GS D Schematic diagram Low Crss 4.5pF@25V Fast switching Improved dv/dt capability Application
fxn4n65d.pdf
FuXin Semiconductor Co., Ltd. FXN4N65D Series Rev.A General Description Features The FXN4N65D uses advanced Silicon s MOSFET Technology, which VDS = 650V provides high performance in on-state resistance, fast switching ID = 4A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria
mpva4n65f mpvu4n65f mpvd4n65f.pdf
MPVX4N65F Series Power MOSFET MPSW60M041 FEATURES APPLICATIONS l BVDSS 650V, ID=4A l Switch Mode Power Supply (SMPS) l RDS(on) 2.8 (Max) @VGS=10V l Uninterruptible Power Supply (UPS) l Very Low FOM (RDS(on) *Qg) l Power Factor Correction (PFC) l Excellent stability and uniformity l AC to DC Converters D G TO-220F TO-251 TO-252 S Ordering Information Type NO. Marking Pack
h4n65u h4n65d.pdf
4N65 Series N-Channel MOSFET 4A, 650V, N H FQU4N65C H4N65U U TO-251 80 / 4Kpcs/ 24Kpcs HAOHAI 4N65 FQD4N65C H4N65D D TO-252 25Kpcs 2.5K/ 5Kpcs/ 4N65 Series Pin Assignment 3-Lead Plastic TO-251 DESCRIPTION Package Code U The H4N65 is a high voltage power MOSFET designed to have better Pin 1 Gate characteristics,
ixfa34n65x2.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFA34N65X2 FEATURES With TO-263(D2PAK) packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain
ixfp24n65x.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFP24N65X FEATURES With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gat
ixth64n65x.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IXTH64N65X FEATURES With TO-247 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
dmg4n65ct.pdf
isc N-Channel MOSFET Transistor DMG4N65CT FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 3.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
fir4n65f.pdf
INCHANGE Semiconductor isc N-Channel Mosfet Transistor FIR4N65F FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 3.0 (Max) DS(on) Avalanche Energy Specified Fast Switching Simple Drive Requirements Minimum Lot-to-Lot variations for robust device performance and reliable operation D
ixfp34n65x2.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFP34N65X2 FEATURES With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V Ga
ixfh34n65x2.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFH34N65X2 FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source
dmg4n65cti.pdf
isc N-Channel MOSFET Transistor DMG4N65CTI FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 3.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
ixth34n65x2.pdf
isc N-Channel MOSFET Transistor IXTH34N65X2 FEATURES With TO-247 packaging With low gate drive requirements Low switching loss Low on-state resistance Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V
m4n65tf.pdf
M4N65TF 4 Amps,650 Volts N-CHANNEL MOSFET FEATURE TO-220TF 4A,650V,R =2.3 @V =10V/2A DS(ON)MAX GS Low gate charge Low C iss Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum Ratings(T =25 ,unless otherwise noted) C Parameter Symbol UNIT M4N65TF Drain-Source Voltage V 650 DSS V Gate-Source Voltage V 30 GSS Continuous
dmp4n65 dmd4n65 dmt4n65 dmf4n65 dmk4n65 dmg4n65.pdf
4N65 650V N-Channel Power MOSFET RDS(ON)
ap4n65d ap4n65y.pdf
AP4N65DIY 650V N-Channel Enhancement Mode MOSFET Description The AP4N65D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system General Features VDS =650V,ID =4A RDS(
apj14n65f apj14n65p apj14n65t ap65r650.pdf
APJ14N65FIPIT (AP65R650) 650V N-Channel Enhancement Mode MOSFET Description The APJ14N65F/P/T is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 730V
ap4n65f ap4n65p.pdf
AP4N65FIP 650V N-Channel Enhancement Mode MOSFET Description The AP4N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Ge
apj14n65d ap65r650.pdf
APJ14N65D (AP65R650) 650V N-Channel Enhancement Mode MOSFET Description The APJ14N65D is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 730V IDM
Otros transistores... 2N65, 2N65L, 2N65Z, 2N65K, 3N65A, 3N65, 3N65Z, 3N65K, AO3400A, 4N65Z, 4N65K, 5N65, 5N65K, 6N65, 5N60, 6N60, 6N60Z
History: ZVP2106GTA | ZVP2106AS
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