All MOSFET. 4N65 Datasheet

 

4N65 MOSFET. Datasheet pdf. Equivalent

Type Designator: 4N65

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 106 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 100 nS

Drain-Source Capacitance (Cd): 70 pF

Maximum Drain-Source On-State Resistance (Rds): 2.4 Ohm

Package: TO-220_TO-262_TO-263_TO-251_TO-252_TO-220F_DFN-8

4N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

4N65 Datasheet (PDF)

1.1. jcs4n65f-c-r-v.pdf Size:779K _update

4N65
4N65

N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS4N65C 封装 Package 主要参数 MAIN CHARACTERISTICS 4.0 A ID 650 V VDSS Rdson(Vgs=10V) 2.5Ω 9nC Qg APPLICATIONS 用途 High frequency switching 高频开关电源 mode power supply 电子镇流器 Electronic ballast UPS 电源 UPS 产品特性 FEATURES 低栅极电荷

1.2. 4n65.pdf Size:376K _utc

4N65
4N65

UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including po

1.3. 4n65k.pdf Size:332K _utc

4N65
4N65

UNISONIC TECHNOLOGIES CO., LTD 4N65K Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including

1.4. 4n65z.pdf Size:334K _utc

4N65
4N65

UNISONIC TECHNOLOGIES CO., LTD 4N65Z Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate 1 charge, low on-state resistance and have a high rugged avalanche TO-220F characteristic. This power MOSFET is usually used in high speed switching application

1.5. ssd04n65.pdf Size:533K _secos

4N65
4N65

SSD04N65 4A , 650V , RDS(ON) 2.6? N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD04N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applic

1.6. kf4n65p f.pdf Size:414K _kec

4N65
4N65

KF4N65P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF4N65P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G correction and switching mode power supplies.

1.7. ceu04n65 ced04n65.pdf Size:380K _cet

4N65
4N65

CED04N65/CEU04N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 3.2A, RDS(ON) = 2.8? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25

1.8. cep04n65 ceb04n65 cef04n65.pdf Size:358K _cet

4N65
4N65

CEP04N65/CEB04N65 CEF04N65 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP04N65 650V 2.8? 4A 10V CEB04N65 650V 2.8? 4A 10V CEF04N65 650V 2.8? 4A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES TO-2

1.9. h04n65.pdf Size:169K _hsmc

4N65
4N65

Spec. No. : MOS200802 HI-SINCERITY Issued Date : 2008.07.22 Revised Date :2009.03.23 MICROELECTRONICS CORP. Page No. : 1/6 H04N65 Series Pin Assignment H04N65 Series Tab 3-Lead Plastic TO-220AB N-Channel Power Field Effect Transistor (650V, 4A) Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Description 3 2 1 This advanced high voltage MOSFET is desi

1.10. ftu04n65c ftd04n65c.pdf Size:363K _ark-micro

4N65
4N65

FTU04N65C/FTD04N65C Doc. NO: QRD-310 650V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features  Low ON Resistance 650V 2.6Ω 4.0A  Low Gate Charge  Fast Switching  100% Avalanche Tested  RoHS Compliant/Lead Free D  Halogen-free available Applications  High Efficiency SMPS G G  Adaptor/Charger D S  Active PFC G S D  LCD

1.11. sif4n65d.pdf Size:378K _sisemi

4N65
4N65

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N65D N- MOS / N-CHANNEL POWER MOSFET SIF4N65D N- MOS / N-CHANN

1.12. sif4n65c 2.pdf Size:376K _sisemi

4N65
4N65

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N65C N- MOS / N-CHANNEL POWER MOSFET SIF4N65C N- MOS / N-CHANN

1.13. sif4n65d 2.pdf Size:376K _sisemi

4N65
4N65

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N65D N- MOS / N-CHANNEL POWER MOSFET SIF4N65D N- MOS / N-CHANN

1.14. sif4n65c.pdf Size:378K _sisemi

4N65
4N65

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N65C N- MOS / N-CHANNEL POWER MOSFET SIF4N65C N- MOS / N-CHANN

1.15. mtn4n65fp.pdf Size:504K _cystek

4N65
4N65

Spec. No. : C797FP Issued Date : 2010.06.09 CYStech Electronics Corp. Revised Date : 2014.07.28 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V RDS(ON) : 3Ω (typ.) MTN4N65FP ID : 4A Description The MTN4N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

1.16. mtn4n65i3.pdf Size:332K _cystek

4N65
4N65

Spec. No. : C797I3 Issued Date : 2010.03.29 CYStech Electronics Corp. Revised Date : 2013.10.18 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V RDS(ON) : 3.0Ω(typ.) MTN4N65I3 ID : 4A Description The MTN4N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

1.17. mtn4n65j3.pdf Size:327K _cystek

4N65
4N65

Spec. No. : C797J3 Issued Date : 2011.09.14 CYStech Electronics Corp. Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V RDS(ON) : 3.0Ω(typ.) MTN4N65J3 ID : 4A Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and halogen-free package

1.18. g4n65.pdf Size:1436K _goford

4N65
4N65

GOFORD G4N65 Description Features • VDSS RDS(ON) ID @ 10V (typ) 4.5 A 650V 1.95Ω • Fast switching • 100% avalanche tested To-251 To-252 • Improved dv/dt capability Application • DC Motor Control and Class D Amplifier • Uninterruptible Power Supply (UPS) • Automotive Absolute Maximum Ratings TC=25℃ unless otherwise specified Max. Symbol Paramet

1.19. sdu04n65 sdd04n65.pdf Size:128K _samhop

4N65
4N65

Green SDU/D04N65 Product SamHop Microelectronics corp. Ver 2.3 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (Ω) Typ Rugged and reliable. 650V 4A 2.5 @VGS=10V Suface Mount Package. D G S SDU SERIES SDD SERIES SDD SERIES TO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK) ORDERING IN

1.20. sdf04n65 sdp04n65.pdf Size:188K _samhop

4N65
4N65

SDP04N65 SDF04N65 a S mHop Microelectronics C orp. Ver 2.2 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (Ω) Typ Rugged and reliable. 650V 4A 2.3 @ VGS=10V TO-220 and TO-220F Package. D G G D S G D S SDP SERIES SDF SERIES TO-220 TO-220F S ORDERING INFORMATION Ordering Code Package Mar

1.21. cs4n65 to-251 252.pdf Size:139K _can-sheng

4N65
4N65

 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-251/TO-252 Plastic-Encapsulate Transistors 4N65 MOSFET(N-Channel) FEATURES Robust High Voltage Terminrtion Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterrized for Use in Bridge Circuits

1.22. ftp04n65 fta04n65.pdf Size:285K _inpower_semi

4N65
4N65

FTP04N65 FTA04N65 N-Channel MOSFET Applications: VDSS RDS(ON) (Max.) ID • Adaptor 650V 2.2 Ω 4.0A • Charger • SMPS Standby Power • LCD Panel Power Features: D • Lead Free • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve G G D G • Inductive Switching Curves S D S Ordering Information TO-220 TO-220F S Not to Scale PART NUMBER

1.23. brf4n65.pdf Size:744K _blue-rocket-elect

4N65
4N65

BRF4N65(BRCS4N65F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220F Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for hi

1.24. brd4n65.pdf Size:700K _blue-rocket-elect

4N65
4N65

BRD4N65(BRCS4N65D) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-252 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for high

1.25. bra4n65.pdf Size:393K _blue-rocket-elect

4N65
4N65

BRA4N65(BRCS4N65A) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-262 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package.. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for high

1.26. bri4n65.pdf Size:690K _blue-rocket-elect

4N65
4N65

BRI4N65(BRCS4N65I) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-251 塑封封装 N 沟道 MOS 晶体管。N-CHANNEL MOSFET in a TO-251 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for high ef

1.27. hfp4n65.pdf Size:818K _shantou-huashan

4N65
4N65

 Shantou Huashan Electronic Devices Co., Ltd. HFP4N65 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

1.28. cs4n65 a4tdy.pdf Size:353K _crhj

4N65
4N65

Silicon N-Channel Power MOSFET R ○ CS4N65 A4TDY General Description: VDSS 650 V CS4N65 A4TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

1.29. cs4n65 a4r.pdf Size:226K _crhj

4N65
4N65

Silicon N-Channel Power MOSFET R ○ CS4N65 A4R General Description: VDSS 650 V CS4N65 A4R, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

1.30. cs4n65 a4hdy.pdf Size:596K _crhj

4N65
4N65

Silicon N-Channel Power MOSFET R ○ CS4N65 A4HDY General Description: VDSS 650 V CS4N65 A4HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.31. cs4n65 a3hdy.pdf Size:353K _crhj

4N65
4N65

Silicon N-Channel Power MOSFET R ○ CS4N65 A3HDY General Description: VDSS 650 V CS4N65 A3HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.32. cs4n65 a3hd.pdf Size:354K _crhj

4N65
4N65

Silicon N-Channel Power MOSFET ○ R CS4N65 A3HD General Description: VDSS 650 V CS4N65 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

1.33. cs4n65 a3r.pdf Size:220K _crhj

4N65
4N65

Silicon N-Channel Power MOSFET R ○ CS4N65 A3R General Description: VDSS 650 V CS4N65 A3R, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

1.34. cs4n65 a3tdy.pdf Size:237K _crhj

4N65
4N65

Silicon N-Channel Power MOSFET R ○ CS4N65 A3TDY General Description: VDSS 650 V CS4N65 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.35. cs4n65 a8hd.pdf Size:345K _crhj

4N65
4N65

Silicon N-Channel Power MOSFET R ○ CS4N65 A8HD 0General Description: VDSS 650 V CS4N65 A8HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.36. cs4n65f a9r.pdf Size:263K _crhj

4N65
4N65

Silicon N-Channel Power MOSFET R ○ CS4N65F A9R General Description: VDSS 650 V CS4N65F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.37. cm4n65f.pdf Size:130K _jdsemi

4N65
4N65

R CM4N65F 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆650V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于 LD E 驱动、电源适配器 等各类功率开关电路 2.主要特点 1 开关速度快 2 通态电阻小,输入电容小 3.

1.38. cm4n65c.pdf Size:148K _jdsemi

4N65
4N65

R CM4N65C 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆650V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于 LD E 驱动、电源适配器 等各类功率开关电路 2.主要特点 开关速度快 通态电阻小,输入电容小 TO-251 TO-25

1.39. ftk4n65p f d i.pdf Size:381K _first_silicon

4N65
4N65

SEMICONDUCTOR FTK4N65P/F/I/D TECHNICAL DATA 4 Amps, 650 Volt Power MOSFET N-CHANNEL POWER MOSFET I : 1 TO - 251 D : DESCRIPTION 1 TO - 252 The FTK4N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche P : characteristics. This power MOSFET is usually used

1.40. ndt4n65.pdf Size:3514K _kexin

4N65
4N65

SMD Type MOSFET N-Channel Enhancement MOSFET NDT4N65 (KDT4N65) ■ Features TO-252 Unit: mm ● VDS (V) = 650V +0.15 6.50 -0.15 +0.1 2.30 -0.1 ● ID = 3.0 A (VGS = 10V) +0.2 5.30 -0.2 +0.8 0.50 -0.7 ● RDS(ON) < 3Ω (VGS = 10V) D 0.127 +0.1 0.80 -0.1 max G +0.1 1 GATE 2.3 0.60-0.1 S +0.15 4.60 -0.15 2 DRAIN 3 SOURCE ■ Absolute Maximum Ratings Ta = 25℃ P

1.41. ndt4n65p.pdf Size:3389K _kexin

4N65
4N65

DIP Type MOSFET N-Channel Enhancement MOSFET NDT4N65P (KDT4N65P) ■ Features TO-251 ● VDS (V) = 650V ● ID = 3.0 A (VGS = 10V) ● RDS(ON) < 3Ω (VGS = 10V) D 1 2 3 G 1 3 2 S Unit: mm ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 Ta=25℃ 3.0 Continuous Drain Current ID Ta=100

1.42. svd4n65t svd4n65f.pdf Size:354K _silan

4N65
4N65

SVD4N65T/SVD4N65F 4A 650V N 2 SVD4N65T/F N MOS S-RinTM VDMOS 1 3 1. 2. 3. AC-DC DC-DC H PMW 1 1 2 2 3 3 TO-220F-3L TO-220-3L ∗ 4A 650V RDS(on) =2.3Ω@VGS=10V ∗ ∗ ∗ ∗ dv/dt

Datasheet: 2N65 , 2N65L , 2N65Z , 2N65K , 3N65A , 3N65 , 3N65Z , 3N65K , TPC8107 , 4N65Z , 4N65K , 5N65 , 5N65K , 6N65 , 5N60 , 6N60 , 6N60Z .

 


4N65
  4N65
  4N65
 

social 

LIST

Last Update

MOSFET: IRLL2703PBF | IRLL110TRPBF | IRLL024ZPBF | IRLL024NPBF | IRLL014PBF | IRLL014NPBF | IRLL3303PBF | IRLL2705PBF | IRF200B211 | IRF1902PBF | IRF1704 | IRF1607PBF | IRF150SMD | IRF150C | IRF150B |