4N65K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 4N65K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 15 nC
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 70 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm
Paquete / Cubierta: TO-252 TO-220F
Búsqueda de reemplazo de MOSFET 4N65K
4N65K Datasheet (PDF)
4n65k.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications includi
4n65kl-ta3-t 4n65kg-ta3-t 4n65kl-tf1-t 4n65kg-tf1-t 4n65kl-tf2-t 4n65kg-tf2-t 4n65kl-tf3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-TC Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications
4n65kl-tm3-t 4n65kg-tm3-t 4n65kl-tms2-t 4n65kg-tms2-t 4n65kl-tn3-r 4n65kg-tn3-r 4n65kg-tf3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-TC Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications
4n65kl-tms-t 4n65kg-tms-t 4n65kl-tms2-t 4n65kg-tms2-t 4n65kl-tms4-t 4n65kg-tms4-t 4n65kl-tn3-r 4n65kg-tn3-r 4n65kl-tnd-r 4n65kg-tnd-r 4n65kl-t2q-t 4n65kg-t2q-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-MT Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applicatio
4n65kl-tf3t-t 4n65kg-tf3t-t 4n65kl-tm3-t 4n65kg-tm3-t 4n65kl-tms2-t 4n65kg-tms2-t 4n65kl-tn3-r 4n65kg-tn3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-TC Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications
4n65kg-tm3-t 4n65kl-tms-t 4n65kg-tms-t 4n65kl-tms2-t 4n65kg-tms2-t 4n65kl-tms4-t 4n65kg-tms4-t 4n65kl-tn3-r 4n65kg-tn3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-TA Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TA is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applicatio
4n65kl-ta3-t 4n65kg-ta3-t 4n65kl-tf1-t 4n65kg-tf1-t 4n65kl-tf2-t 4n65kg-tf2-t 4n65kl-tf3-t 4n65kg-tf3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-TC Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications
4n65kl-tf3-t 4n65kg-tf3-t 4n65kl-tf1-t 4n65kg-tf1-t 4n65kl-tf2-t 4n65kg-tf2-t 4n65kg-t2q-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET 1 1TO-220FTO-220F1 DESCRIPTION The UTC 4N65K is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high 1rugged avalanche characteristic. This power MOSFET is 1usually used in high spee
4n65kl-ta3-t 4n65kg-ta3-t 4n65kl-tf3-t 4n65kg-tf3-t 4n65kl-tf1-t 4n65kg-tf1-t 4n65kl-tf2-t 4n65kg-tf2-t 4n65kl-tf3t-t 4n65kg-tf3t-t 4n65kl-tm3-t 4n65kg-tm3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-MT Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applicatio
4n65kl-ta3-t 4n65kg-ta3-t 4n65kl-tf3-t 4n65kg-tf3-t 4n65kl-tf1-t 4n65kg-tf1-t 4n65kl-tf2-t 4n65kg-tf2-t 4n65kl-tf3t-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-TA Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TA is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applicatio
4n65kl-tf3t-t 4n65kg-tf3t-t 4n65kl-tm3-t 4n65kg-tm3-t 4n65kl-tn3-r 4n65kg-tn3-r 4n65kl-t2q-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET 1 1TO-220FTO-220F1 DESCRIPTION The UTC 4N65K is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high 1rugged avalanche characteristic. This power MOSFET is 1usually used in high spee
4n65kl-t2q-t 4n65kg-t2q-t 4n65kl-t60-k 4n65kg-t60-k 4n65kl-tnd-r 4n65kg-tnd-r 4n65kg-tf3t-t 4n65kl-tm3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N65K-TA Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TA is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applicatio
svsp14n65fjdd2 svsp14n65td2 svsp14n65kd2.pdf
SVSP14N65FJD (T)KD2 14A, 650V MOS 2SVSP14N65FJD/T/KD2 N MOSFET 1 MOS 123 3TO-262-3LSVSP14N65FJD/T/KD2
svf4n65t svf4n65f svf4n65mj svf4n65m svf4n65m svf4n65d svf4n65dtr svf4n65k.pdf
SVF4N65T/F/M/MJ/D/K 4A650V N SVF4N65T/F/M/MJ/D/K N MOS F-CellTM VDMOS
svf4n65t svf4n65f svf4n65m svf4n65mj svf4n65d svf4n65k.pdf
SVF4N65T/F/M/MJ/D/K 4A650V N 2SVF4N65T/F/M/MJ/D/K N MOS 123 F-CellTM VDMOS TO-251J-3L13
swf4n65k2 swn4n65k2 swd4n65k2.pdf
SW4N65K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features BVDSS : 650V TO-220F TO-251N TO-252 ID : 4 A High ruggedness Low RDS(ON) (Typ 1.10)@VGS=10V RDS(ON) : 1.10 Low Gate Charge (Typ 7.1nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 Application:LED, Charger, Adaptor 2 2 3 3 3 1 1. Gate 2
sw4n65k.pdf
SAMWIN SW4N65K N-channel TO-220F/I-PAK/D-PAK MOSFET BVDSS : 650V Features TO-220F TO-251 TO-252 ID : 4A High ruggedness RDS(ON) : 1.25 RDS(ON) (Max 1.25)@VGS=10V Gate Charge (Typ 13nC) Improved dv/dt Capability 1 1 1 2 2 100% Avalanche Tested 2 2 3 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced
swf4n65k swi4n65k swd4n65k.pdf
SW4N65K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS : 650V High ruggedness ID : 4A Low RDS(ON) (Typ 1)@VGS=10V Low Gate Charge (Typ13 nC) RDS(ON) :1 Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 Application:Adapter,LED,Charger, 2 2 2 3 3 3 TV-Power 1 1. Gate 2. Drain 3. Sour
hm4n65k hm4n65i.pdf
HM4N65K/HM4N65IHM4N65K / HM4N65I 650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 4.0A, 650V, RDS(on) = 3.0 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 15nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superior switc
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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