All MOSFET. 4N65K Datasheet


4N65K MOSFET. Datasheet pdf. Equivalent

Type Designator: 4N65K

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 70 pF

Maximum Drain-Source On-State Resistance (Rds): 2.2 Ohm

Package: TO-252_TO-220F

4N65K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

4N65K Datasheet (PDF)

1.1. 4n65k.pdf Size:332K _utc


UNISONIC TECHNOLOGIES CO., LTD 4N65K Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including

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