18N60 Todos los transistores

 

18N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 18N60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 360 W

Tensión drenaje-fuente |Vds|: 600 V

Tensión compuerta-fuente |Vgs|: 30 V

Corriente continua de drenaje |Id|: 18 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 22 nS

Conductancia de drenaje-sustrato (Cd): 280 pF

Resistencia drenaje-fuente RDS(on): 0.36 Ohm

Empaquetado / Estuche: TO-247 TO-3P

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18N60 Datasheet (PDF)

0.1. stb18n60m2 stp18n60m2 stw18n60m2.pdf Size:1200K _st

18N60
18N60

STB18N60M2, STP18N60M2, STW18N60M2N-channel 600 V, 0.255 typ., 13 A MDmesh II Plus low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) 3 Order codes ID1 TJmax max2D PAKSTB18N60M2STP18N60M2 650 V 0.28 13 ATABSTW18N60M2 Extremely low gate charge3 3 Lower RDS(on) x area vs previous generation

0.2. stf18n60m2.pdf Size:1066K _st

18N60
18N60

STF18N60M2N-channel 600 V, 0.255 typ., 13 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTF18N60M2 650 V 0.28 13 A Extremely low gate charge Lower RDS(on) x area vs previous generation321 Low gate input resistanceTO-220FP 100% avalanche tested Zener-protected

 0.3. stl18n60m2.pdf Size:940K _st

18N60
18N60

STL18N60M2N-channel 600 V, 0.278 typ., 9 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesVDS @ Order codeTJmax RDS(on) max IDSTL18N60M2 650 V 0.308 9 A Extremely low gate charge123 Lower RDS(on) x area vs previous generation4 Low gate input resistancePowerFLAT 5x6 HV 100% avalanche

0.4. ixfh18n60p ixfv18n60p.pdf Size:172K _ixys

18N60
18N60

IXFH 18N60P VDSS = 600 VPolarHVTM HiPerFETIXFV 18N60P ID25 = 18 APower MOSFET IXFV 18N60PS RDS(on) 400 m N-Channel Enhancement Modetrr 200 nsFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Co

 0.5. ixfa18n60x ixfh18n60x ixfp18n60x.pdf Size:183K _ixys

18N60
18N60

Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFA18N60XPower MOSFET ID25 = 18AIXFP18N60X RDS(on) 230m IXFH18N60XTO-263 AA (IXFA)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeGSD (Tab)TO-220AB (IXFP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to

0.6. ixtq18n60p ixtv18n60p.pdf Size:171K _ixys

18N60
18N60

IXTQ 18N60P VDSS = 600 VPolarHVTMIXTV 18N60P ID25 = 18 APower MOSFET IXTV 18N60PS RDS(on) 420 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Continuous 30 VGVGSM Tranisent 40 VD (TAB)DSID25 TC = 25

0.7. 18n60.pdf Size:167K _utc

18N60
18N60

UNISONIC TECHNOLOGIES CO., LTD 18N60 Power MOSFET 18A,600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 18N60 uses UTCs advanced proprietary, planar 1stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is TO-247suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) 0.5

0.8. 18n60.pdf Size:212K _inchange_semiconductor

18N60
18N60

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 18N60FEATURESWith TO-247 packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

0.9. stf18n60m2.pdf Size:255K _inchange_semiconductor

18N60
18N60

isc N-Channel MOSFET Transistor STF18N60M2FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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