18N60 Todos los transistores

 

18N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 18N60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 360 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 18 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 22 nS

Conductancia de drenaje-sustrato (Cd): 280 pF

Resistencia drenaje-fuente RDS(on): 0.36 Ohm

Empaquetado / Estuche: TO-247_TO-3P

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18N60 Datasheet (PDF)

1.1. stw18n60m2.pdf Size:1200K _update

18N60
18N60

STB18N60M2, STP18N60M2, STW18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus™ low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB VDS @ RDS(on) 3 Order codes ID 1 TJmax max 2 D PAK STB18N60M2 STP18N60M2 650 V 0.28 Ω 13 A TAB STW18N60M2 • Extremely low gate charge 3 3 • Lower RDS(on) x area vs previous generation

1.2. stf18n60m2.pdf Size:1066K _update

18N60
18N60

STF18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus™ low Qg Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STF18N60M2 650 V 0.28 Ω 13 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation 3 2 1 • Low gate input resistance TO-220FP • 100% avalanche tested • Zener-protected

 1.3. stl18n60m2.pdf Size:940K _update

18N60
18N60

STL18N60M2 N-channel 600 V, 0.278 Ω typ., 9 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - production data Features VDS @ Order code TJmax RDS(on) max ID STL18N60M2 650 V 0.308 Ω 9 A • Extremely low gate charge 1 2 3 • Lower RDS(on) x area vs previous generation 4 • Low gate input resistance PowerFLAT™ 5x6 HV • 100% avalanche

1.4. stb18n60m2.pdf Size:1200K _upd

18N60
18N60

STB18N60M2, STP18N60M2, STW18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus™ low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB VDS @ RDS(on) 3 Order codes ID 1 TJmax max 2 D PAK STB18N60M2 STP18N60M2 650 V 0.28 Ω 13 A TAB STW18N60M2 • Extremely low gate charge 3 3 • Lower RDS(on) x area vs previous generation

 1.5. stp18n60m2.pdf Size:1200K _upd-mosfet

18N60
18N60

STB18N60M2, STP18N60M2, STW18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus™ low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB VDS @ RDS(on) 3 Order codes ID 1 TJmax max 2 D PAK STB18N60M2 STP18N60M2 650 V 0.28 Ω 13 A TAB STW18N60M2 • Extremely low gate charge 3 3 • Lower RDS(on) x area vs previous generation

1.6. ixfh18n60p ixfv18n60p.pdf Size:172K _ixys

18N60
18N60

IXFH 18N60P VDSS = 600 V PolarHVTM HiPerFET IXFV 18N60P ID25 = 18 A Power MOSFET ? ? IXFV 18N60PS RDS(on) ? 400 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V VGS Continuous 30 V VGSM Tranisent 4

1.7. ixtq18n60p ixtv18n60p.pdf Size:171K _ixys

18N60
18N60

IXTQ 18N60P VDSS = 600 V PolarHVTM IXTV 18N60P ID25 = 18 A Power MOSFET ? ? IXTV 18N60PS RDS(on) ? ? ? 420 m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V VGS Continuous 30 V G VGSM Tranisent 40 V D (TAB) D S ID25 TC = 25C18 A IDM TC = 25C, pul

1.8. ixfa18n60x ixfh18n60x ixfp18n60x.pdf Size:183K _ixys

18N60
18N60

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFA18N60X Power MOSFET ID25 = 18A IXFP18N60X   RDS(on)    230m     IXFH18N60X TO-263 AA (IXFA) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to

1.9. 18n60.pdf Size:167K _utc

18N60
18N60

UNISONIC TECHNOLOGIES CO., LTD 18N60 Power MOSFET 18A,600V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar 1 stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is TO-247 suitable for use as a load switch or in PWM applications. ? FEATURES * RDS(ON) ? 0.5? @VGS = 1

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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