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20N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 20N60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 416 W

Tensión drenaje-fuente |Vds|: 600 V

Tensión compuerta-fuente |Vgs|: 30 V

Corriente continua de drenaje |Id|: 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 130 nS

Conductancia de drenaje-sustrato (Cd): 330 pF

Resistencia drenaje-fuente RDS(on): 0.32 Ohm

Empaquetado / Estuche: TO-3P TO-247 TO-230

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20N60 Datasheet (PDF)

0.1. fqpf20n60 fqp20n60.pdf Size:450K _1

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FQP20N60/FQPF20N60600V,20A N-Channel MOSFETGeneral Description Product SummaryVDS700V@150The FQP20N60 & FQPF20N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 20Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

0.2. mgw20n60.pdf Size:246K _motorola

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW20N60D/DDesigner's Data SheetMGW20N60DInsulated Gate Bipolar TransistorMotorola Preferred Devicewith Anti-Parallel Diode

 0.3. mgp20n60urev0.pdf Size:120K _motorola

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP20N60U/DProduct PreviewMGP20N60UInsulated Gate Bipolar TransistorN Channel Enhancement Mode Silicon GateThis Insulated Gat

0.4. mgp20n60u.pdf Size:125K _motorola

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP20N60U/DDesigner's Data SheetMGP20N60UInsulated Gate Bipolar TransistorN Channel Enhancement Mode Silicon GateThis Insula

 0.5. mgw20n60d.pdf Size:209K _motorola

20N60
20N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW20N60D/DDesigner's Data SheetMGW20N60DInsulated Gate Bipolar TransistorMotorola Preferred Devicewith Anti-Parallel Diode

0.6. tk20n60w5.pdf Size:239K _toshiba

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TK20N60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK20N60W5TK20N60W5TK20N60W5TK20N60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 110 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.15 (typ.) by used to Super Junction Str

0.7. tk20n60w.pdf Size:245K _toshiba

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TK20N60WMOSFETs Silicon N-Channel MOS (DTMOS)TK20N60WTK20N60WTK20N60WTK20N60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.13 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

0.8. fgh20n60ufd.pdf Size:1073K _fairchild_semi

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April 2011FGH20N60UFD600V, 20A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induc- Low saturation voltage: VCE(sat) =1.8V @ IC = 20Ation Heating, UPS, SMPS and PFC applications where low con- High input impedanceduction and switc

0.9. fch20n60 fca20n60 fca20n60 f109.pdf Size:971K _fairchild_semi

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December 2008TMSuperFETFCH20N60 / FCA20N60 / FCA20N60_F109600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate cha

0.10. hgtg20n60b3d.pdf Size:176K _fairchild_semi

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HGTG20N60B3DData Sheet December 200140A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 40A, 600V at TC = 25oCThe HGTG20N60B3D is a MOS gated high voltage Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oCswitching device combining the best features of MOSFETs Short Circuit Ratedand bipolar transistors. The device has

0.11. fcp20n60fs fcp20n60 fcpf20n60.pdf Size:1056K _fairchild_semi

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December 2008 TMSuperFETFCP20N60 / FCPF20N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.15balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 75nC) lower gate charge perfo

0.12. fcp20n60 fcpf20n60.pdf Size:613K _fairchild_semi

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August 2014FCP20N60 / FCPF20N60N-Channel SuperFET MOSFET600 V, 20 A, 190 mFeatures DescriptionSuperFET MOSFET is Fairchild Semiconductors first genera- 650V @ TJ = 150Ction of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 150 m utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 75 nC )r

0.13. fcb20n60f f085.pdf Size:354K _fairchild_semi

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December 2013FCB20N60F_F085N-Channel MOSFET600V, 20A, 190m DDFeatures Typ rDS(on) = 171m at VGS = 10V, ID = 20A Typ Qg(tot) = 78nC at VGS = 10V, ID = 20AG UIS Capability RoHS CompliantG Qualified to AEC Q101 SSDescription SuperFETTM is Fairchilds proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance Forcurrentpack

0.14. hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf Size:140K _fairchild_semi

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HGTG20N60C3, HGTP20N60C3,HGT1S20N60C3SData Sheet December 200145A, 600V, UFS Series N-Channel IGBT FeaturesThis family of MOS gated high voltage switching devices 45A, 600V, TC = 25oCcombining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . .

0.15. fch20n60.pdf Size:965K _fairchild_semi

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December 2008TMSuperFETFCH20N60 / FCA20N60 / FCA20N60_F109600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate cha

0.16. fcb20n60ftm.pdf Size:1144K _fairchild_semi

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December 2008 TMSuperFETFCB20N60F600V N-CHANNEL FRFETFeatures Description 650V @ TJ = 150C SuperFETTM is,Fairchild' s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This a

0.17. hgtg20n60a4 hgtp20n60a4.pdf Size:136K _fairchild_semi

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HGTG20N60A4, HGTP20N60A4Data Sheet December 2001600V, SMPS Series N-Channel IGBTs FeaturesThe HGTG20N60A4 and HGTP20N60A4 are MOS gated >100kHz Operation at 390V, 20Ahigh voltage switching devices combining the best features 200kHz Operation at 390V, 12Aof MOSFETs and bipolar transistors. These devices have the 600V Switching SOA Capabilityhigh input impedance of a

0.18. fca20n60s fca20n60s f109.pdf Size:750K _fairchild_semi

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August 2007TMSuperFETFCA20N60S / FCA20N60S_F109600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Farichilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.22balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge perform

0.19. fcb20n60.pdf Size:964K _fairchild_semi

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December 2008 TMSuperFETFCB20N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.15balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 75nC) lower gate charge performance.

0.20. fgh20n60sfd.pdf Size:791K _fairchild_semi

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September 2008 FGH20N60SFDtm600V, 20A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =2.2V @ IC = 20AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion an

0.21. sgh20n60rufd.pdf Size:632K _fairchild_semi

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September 2000 IGBTSGH20N60RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit rated 10us @ TC = 100C, VGE = 15Vseries provides low conduction and switching losses as well High Speed Switchingas short circuit ruggedness. RUFD series is designed for Low Saturation Voltage : VCE(sat) = 2.2 V @

0.22. fca20n60f fca20n60fs.pdf Size:952K _fairchild_semi

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December 2008 TMSuperFETFCA20N60F 600V N-CHANNEL FRFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This a

0.23. fgp20n60ufd.pdf Size:740K _fairchild_semi

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October 2008FGP20N60UFDtm600V, 20A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =1.8V @ IC = 20AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion and s

0.24. fcd620n60zf.pdf Size:619K _fairchild_semi

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November 2013FCD620N60ZFN-Channel SuperFET II FRFET MOSFET600 V, 7.3 A, 620 mFeatures Description 650 V @ TJ = 150oC SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 528 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 20 nC)

0.25. fca20n60 fca20n60 f109.pdf Size:481K _fairchild_semi

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August 2014FCA20N60N-Channel SuperFET MOSFET600 V, 20 A, 190 mFeatures DescriptionSuperFET MOSFET is Fairchild Semiconductors first genera- 650V @ TJ = 150Ction of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 150 m utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 75 nC )resistance an

0.26. hgtg20n60b3.pdf Size:194K _fairchild_semi

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HGTG20N60B3Data Sheet October 200440A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTG20N60B3 is a Generation III MOS gated high 40A, 600V at TC = 25oCvoltage switching devices combining the best features of 600V Switching SOA CapabilityMOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oCh

0.27. fcb20n60 f085.pdf Size:363K _fairchild_semi

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November 2013FCB20N60_F085N-Channel MOSFET600V, 20A, 198m DDFeatures Typ rDS(on) = 173m at VGS = 10V, ID = 20A Typ Qg(tot) = 72nC at VGS = 10V, ID = 20AG UIS Capability RoHS CompliantG Qualified to AEC Q101 SSDescription SuperFETTM is Fairchilds proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance Forcurrentpacka

0.28. hgtg20n60a4d.pdf Size:148K _fairchild_semi

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HGTG20N60A4DData Sheet February 2009600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode >100kHz Operation At 390V, 20AThe HGTG20N60A4D is a MOS gated high voltage switching 200kHz Operation At 390V, 12Adevice combining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. This device has the high input impedance o

0.29. fcb20n60tm.pdf Size:956K _fairchild_semi

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December 2008 TMSuperFETFCB20N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.15balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 75nC) lower gate charge performance.

0.30. fcb20n60f.pdf Size:1152K _fairchild_semi

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December 2008 TMSuperFETFCB20N60F600V N-CHANNEL FRFETFeatures Description 650V @ TJ = 150C SuperFETTM is,Fairchild' s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This a

0.31. sgw20n60ruf.pdf Size:231K _samsung

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N-CHANNEL IGBT SGW20N60RUFFEATURESD2-PAK* Short Circuit rated 10uS @Tc=100 * High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=20A* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCE

0.32. sgh20n60rufd.pdf Size:270K _samsung

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CO-PAK IGBT SGH20N60RUFDFEATURESTO-3P* Short Circuit rated 10uS @Tc=100 * High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=20A* High Input Impedance* CO-PAK, IGBT with FRD : Trr = 50nS (Typ)CAPPLICATIONS* AC & DC Motor controlsG* General Purpose Inverters* Robotics , Servo Controls* Power Supply E* Lamp BallastABSOLUTE MAXIMUM RATINGS

0.33. sgp20n60ruf.pdf Size:231K _samsung

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N-CHANNEL IGBT SGP20N60RUFFEATURESTO-220* Short Circuit rated 10uS @Tc=100 * High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=20A* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCE

0.34. zds020n60.pdf Size:1149K _rohm

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Data Sheet10V Drive Nch MOSFETZDS020N60 Structure Dimensions (Unit : mm)SOP8Silicon N-channel MOSFET(8) (5)Features1) Low on-resistance.2) High-speed switching.(1) (4)3) Wide SOA. ApplicationSwitching Packaging specifications Inner circuitPackage Taping (8) (7) (6) (5)TypeCode TBBasic ordering unit (pieces) 2500ZDS020N60 (1) Source

0.35. rdd020n60.pdf Size:534K _rohm

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Data Sheet10V Drive Nch MOSFET RDD020N60 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) High-speed switching.0.753) Wide range of SOA.0.65(1) Gate0.9 2.3(1) (2) (3)4) Drive circuits can be simple. (2) Drain 2.3 0.51.0(3) Source5) Parallel use is easy. Applicati

0.36. sgb20n60 .pdf Size:790K _infineon

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SGB20N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for: E- Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D

0.37. spp20n60c3 spi20n60c3 spa20n60c3 rev3.2.pdf Size:683K _infineon

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SPP20N60C3SPI20N60C3, SPA20N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO220FP PG-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 High peak current capability Improved transco

0.38. ikb20n60trev2 4g.pdf Size:1220K _infineon

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IKB20N60T TrenchStop Series p Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners Trench

0.39. ikw20n60h3 rev1 2g.pdf Size:1642K _infineon

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IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKW20N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIKW20N60H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diodeCFeatures:TREN

0.40. igp20n60h3 rev1 2g.pdf Size:1611K _infineon

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IGBTHigh speed IGBT in Trench and Fieldstop technologyIGP20N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGP20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175C G

0.41. sgb20n60.pdf Size:787K _infineon

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SGB20N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for: E- Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D

0.42. spp20n60s5.pdf Size:129K _infineon

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SPP20N60S5Final dataSPB20N60S5Cool MOS Power TransistorVDS 600 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20 A Worldwide best RDS(on) in TO 220P-TO263-3-2 P-TO220-3-1 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunityType Package Ordering Cod

0.43. igw20n60h3.pdf Size:1522K _infineon

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IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW20N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGW20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI Very soft, fast recovery anti-parallel d

0.44. spb20n60c3.pdf Size:782K _infineon

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VDS Tjmax G 3 G

0.45. spb20n60s5.pdf Size:665K _infineon

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SPB20N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20 APG-TO263 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPB20N60S5 PG-TO263 Q67040-S4171 20N60S5Maximum RatingsPara

0.46. spp20n60s5 .pdf Size:370K _infineon

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SPP20N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20 A Worldwide best RDS(on) in TO 220PG-TO220 Ultra low gate charge2 Periodic avalanche rated Extreme dv/dt rated321 Ultra low effective capacitancesP-TO220-3-1 Improved transconductanceType Package Ordering Code Marking

0.47. sgp20n60hs.pdf Size:352K _infineon

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SGP20N60HS SGW20N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distri

0.48. ikb20n60t.pdf Size:697K _infineon

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IKB20N60TTRENCHSTOP Series pLow Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft,fast recovery anti-parallel Emitter Controlled HE diodeFeatures:C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s Designed for frequency inverters for washing machines, fans, pumps and vacuumGcleanersE

0.49. ikb20n60h3.pdf Size:1491K _infineon

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IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKB20N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIKB20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat

0.50. skw20n60hsg.pdf Size:346K _infineon

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SKW20N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribution High ruggedness,

0.51. spw20n60c3.pdf Size:765K _infineon

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VDS Tjmax G G-TO247

0.52. ikw20n60h3.pdf Size:2118K _infineon

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IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKW20N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIKW20N60H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diodeCFeatures:TRE

0.53. sgp20n60.pdf Size:359K _infineon

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SGP20N60 SGW20N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for: E- Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

0.54. skw20n60g.pdf Size:315K _infineon

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SKW20N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness,

0.55. ikb20n60h3 rev1 1g.pdf Size:1537K _infineon

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IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKB20N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIKB20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat

0.56. sgp20n60 sgw20n60 rev2.pdf Size:331K _infineon

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SGP20N60 SGW20N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for: E- Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

0.57. igb20n60h3.pdf Size:733K _infineon

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IGBTHigh speed IGBT in Trench and Fieldstop technologyIGB20N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGB20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175C G

0.58. sgp20n60 sgw20n60 rev2 4g.pdf Size:358K _infineon

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SGP20N60 SGW20N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for: E- Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

0.59. spw20n60cfd.pdf Size:2950K _infineon

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Please note the new package dimensions arccording to PCN 20091 4APlease note the new package dimensions arccording to PCN 20091 4APlease note the new package dimensions arccording to PCN 20091 4APlease note the new package dimensions arccording to PCN 20091 4APlease note the new package dimensions arccording to PCN 20091 4APlease note the new package

0.60. skw20n60.pdf Size:469K _infineon

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SKW20N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter ControlledDiodeC 75% lower Eoff compared to previous generationcombined with low conduction losses Short circuit withstand time 10 sGE Designed for:- Motor controls- Inverter NPT-Technology for 600V applications offers:- very tight parameter distribution- high rugged

0.61. sgw20n60hs.pdf Size:383K _infineon

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SGP20N60HS SGW20N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distri

0.62. skw20n60hs.pdf Size:853K _infineon

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SKW20N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-247-3-21 - moderate Eoff increase with temperature - very tight parameter distribution High ruggednes

0.63. spi20n60cfd.pdf Size:554K _infineon

20N60
20N60

SPI20N60CFDCI MOS Pwer TransistrVDS @ Tjmax 650 VFeatureRDS(on) 0.22 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO262 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery chargeQualifi

0.64. spp20n60c3 spi20n60c3 spa20n60c3.pdf Size:1832K _infineon

20N60
20N60

SPP20N60C3SPI20N60C3, SPA20N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO220FP PG-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 High peak current capability Improved transco

0.65. ikq120n60ta.pdf Size:2188K _infineon

20N60
20N60

IGBTLow Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diodeIKQ120N60TA600V low loss switching series third generationData sheetIndustrial Power ControlIKQ120N60TATRENCHSTOPTM seriesLow Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled di

0.66. ikw20n60t.pdf Size:573K _infineon

20N60
20N60

IKW20N60TTRENCHSTOP SeriesLow Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft,fast recovery anti-parallel Emitter Controlled HE diodeCFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175CG Short circuit withstand time 5sE Designed for :- Frequency Converters- Uninterrupted Power Supply TRENCHSTOP a

0.67. igp20n60h3.pdf Size:2046K _infineon

20N60
20N60

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGP20N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGP20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low turn-off energy low VCEsat low EMI maximum junctio

0.68. igb20n60h3 rev1 1g.pdf Size:1454K _infineon

20N60
20N60

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGB20N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGB20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175C G

0.69. spw20n60s5.pdf Size:768K _infineon

20N60
20N60

SPW20N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20 A Ultra low gate chargePG-TO247 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPW20N60S5 PG-TO247 Q67040-S4238 20N60S5Maximum RatingsPara

0.70. sgw20n60.pdf Size:359K _infineon

20N60
20N60

SGP20N60 SGW20N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for: E- Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

0.71. sgp20n60hs sgw20n60hs rev2 5g.pdf Size:382K _infineon

20N60
20N60

SGP20N60HS SGW20N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distri

0.72. ikp20n60h3g.pdf Size:1698K _infineon

20N60
20N60

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKP20N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIKP20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat

0.73. spa20n60cfd.pdf Size:466K _infineon

20N60
20N60

SPA20N60CFDCoolMOSTM Power TransistorProduct SummaryFeaturesV 600 VDS New revolutionary high voltage technologyR 0.22 DS(on),max Intrinsic fast-recovery body diode1)20.7 AID Extremely low reverse recovery charge Ultra low gate chargePG-TO220-3-31 Extreme dv /dt rated High peak current capability Periodic avalanche rated Qualified f

0.74. sgp20n60hs sgw20n60hs rev2.pdf Size:354K _infineon

20N60
20N60

SGP20N60HS SGW20N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distri

0.75. ikp20n60t ikw20n60t rev2 5g.pdf Size:449K _infineon

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20N60

IKP20N60T TrenchStop Series IKW20N60TLow Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop an

0.76. ikp20n60t.pdf Size:561K _infineon

20N60
20N60

IKP20N60TTRENCHSTOP SeriesLow Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft,fast recovery anti-parallel Emitter Controlled HE diodeCFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175CG Short circuit withstand time 5sE Designed for :- Frequency Converters- Uninterrupted Power Supply TRENCHSTOP a

0.77. spp20n60cfd.pdf Size:643K _infineon

20N60
20N60

SPP20N60CFDCI MOS Pwer TransistrVDS @ Tjmax 650 VFeatureRDS(on) 0.22 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery chargeType Pa

0.78. igw20n60h3 rev1 1g.pdf Size:1562K _infineon

20N60
20N60

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW20N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGW20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI Very soft, fast recovery anti-parallel d

0.79. ikp20n60h3.pdf Size:1648K _infineon

20N60
20N60

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKP20N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIKP20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat

0.80. ixgk120n60c2 ixgx120n60c2.pdf Size:925K _ixys

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20N60

ADVANCE TECHNICAL INFORMATIONVCES = 600 VHiPerFASTTM IGBT IXGK 120N60C2IC110 = 120 ALightspeed 2TM SeriesIXGX 120N60C2VCE(sat) = 2.5 Vtfi(typ) = 45 nsSymbol Test Conditions Maximum RatingsTO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)EIC25 TC = 25C (limited by leads)

0.81. ixgr120n60b.pdf Size:558K _ixys

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20N60

HiPerFASTTM IGBTIXGR 120N60B VCES = 600 VIC25 = 156 AISOPLUS247TM(Electrically Isolated Back Surface) VCE(sat) = 2.1 VSymbol Test Conditions Maximum RatingsISOPLUS 247E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCE Isolated Backside*IC25 TC = 25C 156 AIC110 TC = 110C 102 AIL(R

0.82. ixsh20n60au1.pdf Size:82K _ixys

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20N60

Not for new designs VCES IC25 VCE(sat)Low VCE(sat) IGBT with Diode IXSH 20 N60U1 600 V 40 A 2.5 VHigh Speed IGBT with Diode IXSH 20 N60AU1 600 V 40 A 3.0 VCombi PacksShort Circuit SOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC

0.83. ixgk120n60b.pdf Size:154K _ixys

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20N60

HiPerFASTTM IGBTs VCES = 600VIXGK120N60BIC90 = 120AIXGX120N60BVCE(sat) 2.1VTO-264 (IXGK)GSymbol Test Conditions Maximum RatingsCEVCES TJ = 25C to 150C 600 VTabVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VPLUS247 (IXGX)VGEM Transient 30 VIC25 TC = 25C ( Chip Capability ) 200 AIC90 TC = 90C 120 AILRMS Termin

0.84. ixgk320n60b3.pdf Size:193K _ixys

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20N60

Preliminary Technical InformationGenX3TM 600V VCES = 600VIXGK320N60B3IC90 = 320AIGBTsIXGX320N60B3VCE(sat) 1.6VMedium-Speed Low-Vsat PTIGBTs for 5-40 kHz SwitchingTO-264 (IXGK)GSymbol Test Conditions Maximum RatingsCEVCES TJ = 25C to 150C 600 VTabVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VPLUS247 (IXGX)VGEM T

0.85. ixgk120n60c2.pdf Size:186K _ixys

20N60
20N60

Preliminary Technical InformationVCES = 600VHiPerFASTTM IGBT IXGK120N60C2Lightspeed 2TM Series IC110 = 120AIXGX120N60C2 VCE(sat) 2.5V tfi(typ) = 80nsTO-264(IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VC (TAB)EVGEM Transient 30 VIC25 TC = 25

0.86. ixsh20n60u1.pdf Size:82K _ixys

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20N60

Not for new designs VCES IC25 VCE(sat)Low VCE(sat) IGBT with Diode IXSH 20 N60U1 600 V 40 A 2.5 VHigh Speed IGBT with Diode IXSH 20 N60AU1 600 V 40 A 3.0 VCombi PacksShort Circuit SOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC

0.87. ixdp20n60bd1.pdf Size:277K _ixys

20N60
20N60

IXDP 20N60 B VCES = 600 VHigh Voltage IGBTIXDP 20N60 BD1 IC25 = 32 Awith optional DiodeVCE(sat) typ = 2.2 VHigh Speed,Low Saturation VoltageC CTO-220 ABG GG CEC (TAB)E EG = Gate, E = Emitter IXDP 20N60B IXDP 20N60B D1C = Collector , TAB = CollectorSymbol Conditions Maximum Ratings FeaturesNPT IGBT technologyVCES TJ = 25C to 150C 600 Vlow switching l

0.88. ixgh20n60-a ixgm20n60-a.pdf Size:64K _ixys

20N60
20N60

VCES IC25 VCE(sat)Low VCE(sat) IGBT IXGH/IXGM 20 N60 600 V 40 A 2.5 VHigh speed IGBT IXGH/IXGM 20 N60A 600 V 40 A 3.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C40 AIC90 TC = 90C20 A TO-204 AE (IXGM)ICM TC = 25C, 1 ms

0.89. ixkp20n60c5m.pdf Size:101K _ixys

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20N60

IXKP 20N60C5MID25 = 7.6 ACoolMOS 1) Power MOSFETVDSS = 600 VRDS(on) max = 0.2 Fully isolated packageN-Channel Enhancement ModeLow RDSon, High VDSS MOSFETDTO-220 FPUltra low gate chargeGDGSPreliminary dataSFeaturesMOSFET fast CoolMOS 1) power MOSFETSymbol Conditions Maximum Ratings4th generationVDSS TVJ = 25C 600 V - High blocking capabi

0.90. ixgh20n60b.pdf Size:79K _ixys

20N60
20N60

VCES = 600 VIXGH 20N60BHiPerFASTTM IGBTIC25 = 40 AIXGT 20N60BVCE(sat)typ = 1.7 Vtfi(typ) = 100 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-268 (D3) (IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VG(TAB)EVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C40 ATO-247 AD (IXGH)IC90 TC = 90C20 AICM T

0.91. ixgk120n60b3-ixgx120n60b3.pdf Size:197K _ixys

20N60
20N60

VCES = 600VGenX3TM 600V IXGK120N60B3IC110 = 120AIXGX120N60B3IGBTsVCE(sat) 1.8Vtfi(typ) = 145nsMedium-Speed-Low-Vsat PTIGBTs for 5-40kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCEVCGR TJ = 25C to 150C, RGE = 1M 600 VTabVGES Continuous 20 VVGEM Transient 30 VPLUS247TM (IXG

0.92. ixdp20n60b.pdf Size:277K _ixys

20N60
20N60

IXDP 20N60 B VCES = 600 VHigh Voltage IGBTIXDP 20N60 BD1 IC25 = 32 Awith optional DiodeVCE(sat) typ = 2.2 VHigh Speed,Low Saturation VoltageC CTO-220 ABG GG CEC (TAB)E EG = Gate, E = Emitter IXDP 20N60B IXDP 20N60B D1C = Collector , TAB = CollectorSymbol Conditions Maximum Ratings FeaturesNPT IGBT technologyVCES TJ = 25C to 150C 600 Vlow switching l

0.93. ixgn120n60a3.pdf Size:200K _ixys

20N60
20N60

VCES = 600VIXGN120N60A3GenX3TM 600V IGBTIXGN120N60A3D1 IC110 = 120AVCE(sat) 1.35VUltra-low Vsat PT IGBTs for up to5kHz switchingSOT-227B, miniBLOC E153432E E 60A360A3D1 GSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VE VCGR TJ = 25C to 150C, RGE = 1M 600 VCVGES Continuous 20 VG = Gate, C = Collector, E =

0.94. ixsp20n60b2d1.pdf Size:173K _ixys

20N60
20N60

IXSA 20N60B2D1VCES = 600 VHigh Speed IGBTIXSP 20N60B2D1IC25 = 35 AVCE(sat) = 2.5 VShort Circuit SOA CapabilityPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-220 (IXSP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C35 AIC110 TC = 110C20 ATO-22

0.95. ixga20n60b.pdf Size:77K _ixys

20N60
20N60

IXGA 20N60B VCES = 600 VHiPerFASTTM IGBTIXGP 20N60B IC25 = 40 AVCE(sat)typ = 1.7 Vtfi = 100 nsPreliminary data sheetSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VGVGEM Transient 30 VCEIC25 TC = 25C 40 AIC90 TC = 90C 20 ATO-263 AA (IXGA)ICM TC = 25C,

0.96. ixgx120n60b3.pdf Size:194K _ixys

20N60
20N60

VCES = 600VGenX3TM 600V IXGK120N60B3IC110 = 120AIXGX120N60B3IGBTsVCE(sat) 1.8Vtfi(typ) = 145nsMedium-Speed-Low-Vsat PTIGBTs for 5-40kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCEVCGR TJ = 25C to 150C, RGE = 1M 600 VTabVGES Continuous 20 VVGEM Transient 30 VPLUS247TM (IXG

0.97. ixkc20n60c.pdf Size:172K _ixys

20N60
20N60

IXKC 20N60CVDSS = 600 VCoolMOS 1) Power MOSFETID25 = 15 ARDS(on) max = 190 mElectrically isolated back surface2500 V electrical isolationN-Channel Enhancement ModeDISOPLUS220TMLow RDSon, high VDSS MOSFETUltra low gate chargeGGD Sisolated tabSE72873FeaturesMOSFET Silicon chip on Direct-Copper-Bond Symbol Conditions Maximum Ratingssubstrate

0.98. ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf Size:316K _ixys

20N60
20N60

Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine

0.99. ixgt20n60bd1.pdf Size:52K _ixys

20N60
20N60

IXGH 20N60BD1HiPerFASTTM IGBT VCES = 600 VIXGT 20N60BD1with Diode IC25 = 40 AVCE(sat)typ = 1.7 Vtfi(typ) = 100 nsPreliminary dataSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 MW 600 VEC (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 ADIC25 TC = 25C40 A(IXGH)IC90 TC = 90C20 A

0.100. ixfh15n60 ixfh20n60 ixfm15n60 ixfm20n60.pdf Size:82K _ixys

20N60
20N60

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 15 N60 600 V 15 A 0.50 WPower MOSFETsIXFH/IXFM 20 N60 600 V 20 A 0.35 Wtrr 250 nsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 MW 600 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 2

0.101. ixgk120n60a3.pdf Size:211K _ixys

20N60
20N60

GenX3TM A3-Class IXGK120N60A3 VCES = 600VIXGX120N60A3IC110 = 120AIGBTSVCE(sat) 1.35VUltra-Low Vsat PT IGBTs forup to 5kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VG(TAB)CVGES Continuous 20 VEEVGEM Transient 30 VIC25 TC = 25C 200 APLUS 2

0.102. ixgx320n60a3.pdf Size:199K _ixys

20N60
20N60

GenX3TM 600V IGBTs VCES = 600VIXGK320N60A3IC25 = 320AIXGX320N60A3VCE(sat) 1.25VUltra-Low Vsat PT IGBTs forup to 5kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VCTabEEVGES Continuous 20 VVGEM Transient 30 VPLUS247TM (IXGX)IC25 TC = 25C (C

0.103. ixsa20n60b2d1.pdf Size:173K _ixys

20N60
20N60

IXSA 20N60B2D1VCES = 600 VHigh Speed IGBTIXSP 20N60B2D1IC25 = 35 AVCE(sat) = 2.5 VShort Circuit SOA CapabilityPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-220 (IXSP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C35 AIC110 TC = 110C20 ATO-22

0.104. ixfh20n60q ixft20n60q.pdf Size:144K _ixys

20N60
20N60

IXFH 20N60Q VDSS = 600 VHiPerFETTMIXFT 20N60Q ID25 = 20 APower MOSFETs RDS(on) = 0.35 Q-Classtrr 250nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt,Low Gate Charge and CapacitancesSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS C

0.105. ixgx320n60b3.pdf Size:193K _ixys

20N60
20N60

Preliminary Technical InformationGenX3TM 600V VCES = 600VIXGK320N60B3IC90 = 320AIGBTsIXGX320N60B3VCE(sat) 1.6VMedium-Speed Low-Vsat PTIGBTs for 5-40 kHz SwitchingTO-264 (IXGK)GSymbol Test Conditions Maximum RatingsCEVCES TJ = 25C to 150C 600 VTabVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VPLUS247 (IXGX)VGEM T

0.106. ixsq20n60b2d1.pdf Size:590K _ixys

20N60
20N60

IXSH 20N60B2D1VCES = 600 VHigh Speed IGBTIC25 = 35 AVCE(sat) = 2.5 VShort Circuit SOA CapabilityPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings TO-247 (IXSH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGVGEM Transient 30 VCEIC25 TC = 25C35 AG = Gate C = CollectorIC110 TC = 110C20 AE

0.107. ixgr120n60c2.pdf Size:169K _ixys

20N60
20N60

Preliminary Technical InformationVCES = 600VHiPerFASTTM IGBT IXGR120N60C2IC110 = 60AISOPLUS247TMVCE(sat) 2.7VLightspeed 2TM Seriestfi(typ) = 80ns(Electrically Isolated Back Surface)ISOPLUS247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VG (ISOLATED TAB)

0.108. ixgh20n60bd1.pdf Size:52K _ixys

20N60
20N60

IXGH 20N60BD1HiPerFASTTM IGBT VCES = 600 VIXGT 20N60BD1with Diode IC25 = 40 AVCE(sat)typ = 1.7 Vtfi(typ) = 100 nsPreliminary dataSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 MW 600 VEC (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 ADIC25 TC = 25C40 A(IXGH)IC90 TC = 90C20 A

0.109. ixgx120n60c2.pdf Size:186K _ixys

20N60
20N60

Preliminary Technical InformationVCES = 600VHiPerFASTTM IGBT IXGK120N60C2Lightspeed 2TM Series IC110 = 120AIXGX120N60C2 VCE(sat) 2.5V tfi(typ) = 80nsTO-264(IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VC (TAB)EVGEM Transient 30 VIC25 TC = 25

0.110. ixgk320n60a3.pdf Size:199K _ixys

20N60
20N60

GenX3TM 600V IGBTs VCES = 600VIXGK320N60A3IC25 = 320AIXGX320N60A3VCE(sat) 1.25VUltra-Low Vsat PT IGBTs forup to 5kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VCTabEEVGES Continuous 20 VVGEM Transient 30 VPLUS247TM (IXGX)IC25 TC = 25C (C

0.111. ixsh20n60b2d1.pdf Size:590K _ixys

20N60
20N60

IXSH 20N60B2D1VCES = 600 VHigh Speed IGBTIC25 = 35 AVCE(sat) = 2.5 VShort Circuit SOA CapabilityPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings TO-247 (IXSH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGVGEM Transient 30 VCEIC25 TC = 25C35 AG = Gate C = CollectorIC110 TC = 110C20 AE

0.112. ixgn320n60a3.pdf Size:166K _ixys

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20N60

VCES = 600VIXGN320N60A3GenX3TM 600V IGBTIC25 = 320AVCE(sat) 1.25VUltra-Low-Vsat PT IGBT forup to 5kHz SwitchingESOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 150C 600 VE VCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VVGEM Transient 30 VE IC25 TC = 25C (Chip Capability) 320 A

0.113. ixgp20n60b.pdf Size:77K _ixys

20N60
20N60

IXGA 20N60B VCES = 600 VHiPerFASTTM IGBTIXGP 20N60B IC25 = 40 AVCE(sat)typ = 1.7 Vtfi = 100 nsPreliminary data sheetSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VGVGEM Transient 30 VCEIC25 TC = 25C 40 AIC90 TC = 90C 20 ATO-263 AA (IXGA)ICM TC = 25C,

0.114. ixgn120n60a3-a3d1.pdf Size:202K _ixys

20N60
20N60

VCES = 600VIXGN120N60A3GenX3TM 600V IGBTIXGN120N60A3D1 IC110 = 120AVCE(sat) 1.35VUltra-low Vsat PT IGBTs for up to5kHz switchingSOT-227B, miniBLOC E153432E E 60A360A3D1 GSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VE VCGR TJ = 25C to 150C, RGE = 1M 600 VCVGES Continuous 20 VG = Gate, C = Collector, E =

0.115. mmix1g320n60b3.pdf Size:243K _ixys

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20N60

Advance Technical InformationGenX3TM 600V VCES = 600VMMIX1G320N60B3IC25 = 400AIGBTVCE(sat) 1.50VMedium-Speed Low-Vsat PTIGBTs for 5-40 kHz SwitchingCGESymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V Isolated TabVCGR TJ = 25C to 150C, RGE = 1M 600 VCVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 4

0.116. ixgx120n60b.pdf Size:154K _ixys

20N60
20N60

HiPerFASTTM IGBTs VCES = 600VIXGK120N60BIC90 = 120AIXGX120N60BVCE(sat) 2.1VTO-264 (IXGK)GSymbol Test Conditions Maximum RatingsCEVCES TJ = 25C to 150C 600 VTabVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VPLUS247 (IXGX)VGEM Transient 30 VIC25 TC = 25C ( Chip Capability ) 200 AIC90 TC = 90C 120 AILRMS Termin

0.117. ixgx120n60a3.pdf Size:211K _ixys

20N60
20N60

GenX3TM A3-Class IXGK120N60A3 VCES = 600VIXGX120N60A3IC110 = 120AIGBTSVCE(sat) 1.35VUltra-Low Vsat PT IGBTs forup to 5kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VG(TAB)CVGES Continuous 20 VEEVGEM Transient 30 VIC25 TC = 25C 200 APLUS 2

0.118. ixth20n60 ixtm20n60.pdf Size:105K _ixys

20N60
20N60

IXTH 20N60 VDSS = 600 VMegaMOSTMFETIXTM 20N60 ID25 = 20 ARDS(on) = 0.35 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 15N60 15 ATO-204 AE (IXTM)20N60 20 AIDM TC = 25C, p

0.119. ixgt20n60b.pdf Size:79K _ixys

20N60
20N60

VCES = 600 VIXGH 20N60BHiPerFASTTM IGBTIC25 = 40 AIXGT 20N60BVCE(sat)typ = 1.7 Vtfi(typ) = 100 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-268 (D3) (IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VG(TAB)EVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C40 ATO-247 AD (IXGH)IC90 TC = 90C20 AICM T

0.120. ixgk120n60b ixgx120n60b.pdf Size:601K _ixys

20N60
20N60

HiPerFASTTM IGBTIXGK 120N60B VCES = 600 VIXGX 120N60B IC25 = 200 AVCE(sat) = 2.1 VSymbol Test Conditions Maximum Ratings PLUS 247TM(IXGX)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGS = 1 M 600 VVCES Continuous 20 V (TAB)GVGEM Transient 30 VCEIC25 TC = 25C 200 A TO-264 AAIC90 TC = 90C 120 A (IXGK)IL(RMS) External lead limit 76 AICM TC

0.121. ixgk120n60b3.pdf Size:194K _ixys

20N60
20N60

VCES = 600VGenX3TM 600V IXGK120N60B3IC110 = 120AIXGX120N60B3IGBTsVCE(sat) 1.8Vtfi(typ) = 145nsMedium-Speed-Low-Vsat PTIGBTs for 5-40kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCEVCGR TJ = 25C to 150C, RGE = 1M 600 VTabVGES Continuous 20 VVGEM Transient 30 VPLUS247TM (IXG

0.122. ixgn120n60a3d1.pdf Size:200K _ixys

20N60
20N60

VCES = 600VIXGN120N60A3GenX3TM 600V IGBTIXGN120N60A3D1 IC110 = 120AVCE(sat) 1.35VUltra-low Vsat PT IGBTs for up to5kHz switchingSOT-227B, miniBLOC E153432E E 60A360A3D1 GSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VE VCGR TJ = 25C to 150C, RGE = 1M 600 VCVGES Continuous 20 VG = Gate, C = Collector, E =

0.123. 20n60.pdf Size:203K _utc

20N60
20N60

UNISONIC TECHNOLOGIES CO., LTD 20N60 Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith planar stripe and DMOS technology. This technology isspecialized in allowing a minimum on-state resistance and superior switching performance. It also can withst

0.124. apt20n60bc3.pdf Size:194K _apt

20N60
20N60

APT20N60BC3APT20N60SC3600V 20.7A 0.190Super Junction MOSFETD3PAKTO-247COOLMOSPower Semiconductors Ultra low RDS(ON) Low Miller CapacitanceD Ultra Low Gate Charge, Qg Avalanche Energy RatedG TO-247 or Surface Mount D3PAK PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT17N80BC3_S

0.125. fmw20n60s1hf.pdf Size:470K _fuji

20N60
20N60

http://www.fujielectric.com/products/semiconductor/FMW20N60S1HF FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicLow on-state resistanceTO-247-P2Low switching losseasy to use (more controllabe switching dV/dt by R )gDrain(D)ApplicationsUPSServerGate(G)Telecom Source(S)

0.126. fmh20n60s1.pdf Size:701K _fuji

20N60
20N60

http://www.fujielectric.com/products/semiconductor/FMH20N60S1 FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicPb-free lead terminalTO-3P(Q) 3.2 0.115.5max1.50.213 0.24.50.2RoHS compliant 10 0.2DrainApplicationsFor switching+0.3 +0.31.6 -0.11.6 -0.1+0.32.2 -0

0.127. fmp20n60s1.pdf Size:410K _fuji

20N60
20N60

http://www.fujielectric.com/products/semiconductor/FMP20N60S1 FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicLow on-state resistance 4.50.2TO-220 10+0.5 01.30.2Low switching losseasy to use (more controllabe switching dV/dt by R )gDrain(D)ApplicationsUPS1.2 0.2ServerPRE-S

0.128. fmv20n60s1.pdf Size:448K _fuji

20N60
20N60

http://www.fujielectric.com/products/semiconductor/FMV20N60S1 FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicLow on-state resistanceTO-220F(SLS)Low switching losseasy to use (more controllabe switching dV/dt by R )gDrain(D)ApplicationsUPSServerGate(G)TelecomSource(S)Power condi

0.129. hgtg20n60c3r.pdf Size:112K _harris_semi

20N60
20N60

HGTG20N60C3R, HGTP20N60C3R,S E M I C O N D U C T O RHGT1S20N60C3R, HGT1S20N60C3RS40A, 600V, Rugged UFS Series N-Channel IGBTsJanuary 1997Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performancein the demanding world of motor control operation as well as 600V Switching SOA Capabilityother high voltage switching applications. These

0.130. hgtp20n60c3r.pdf Size:112K _harris_semi

20N60
20N60

HGTG20N60C3R, HGTP20N60C3R,S E M I C O N D U C T O RHGT1S20N60C3R, HGT1S20N60C3RS40A, 600V, Rugged UFS Series N-Channel IGBTsJanuary 1997Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performancein the demanding world of motor control operation as well as 600V Switching SOA Capabilityother high voltage switching applications. These

0.131. kgf20n60kda.pdf Size:1523K _kec

20N60
20N60

SEMICONDUCTORKGF20N60KDATECHNICAL DATAGeneral DescriptionKEC Field Stop Trench IGBTs offer low switching losses, high energy efficiencyand short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorShort Circuit Withstand T

0.132. kgt20n60kda.pdf Size:441K _kec

20N60
20N60

SEMICONDUCTORKGT20N60KDATECHNICAL DATAGeneral DescriptionKEC NPT Trench IGBTs offer low switching losses, high energy efficiency BAOS Kand short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters.DIM MILLIMETERS_+A 15.90 0.30_B5.00 + 0.20FEATURES _C20.85 + 0.30_D3.00 + 0.20

0.133. kgf20n60pa.pdf Size:1411K _kec

20N60
20N60

SEMICONDUCTORKGF20N60PATECHNICAL DATAGeneral DescriptionKEC Field Stop Trench IGBTs offer low switching losses, high energy efficiencyand short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorShort Circuit Withstand Ti

0.134. 20n60a msafx20n60a.pdf Size:34K _microsemi

20N60
20N60

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256MSAFX20N60AFeatures600 Volts Ultrafast body diode 20 Amps Rugged polysilicon gate cell structure350 m Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductanceN-CHANNEL Very low thermal resistance

0.135. aot20n60.pdf Size:540K _aosemi

20N60
20N60

AOT20N60/AOTF20N60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT20N60 & AOTF20N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 20Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

0.136. aok20n60.pdf Size:445K _aosemi

20N60
20N60

AOK20N60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOK20N60 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

0.137. aotf20n60.pdf Size:540K _aosemi

20N60
20N60

AOT20N60/AOTF20N60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT20N60 & AOTF20N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 20Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

0.138. aok20n60l.pdf Size:445K _aosemi

20N60
20N60

AOK20N60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOK20N60 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

0.139. aot20n60l.pdf Size:540K _aosemi

20N60
20N60

AOT20N60/AOTF20N60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT20N60 & AOTF20N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 20Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

0.140. sff20n60n sff20n60p.pdf Size:164K _ssdi

20N60
20N60

0.141. sff20n60b.pdf Size:155K _ssdi

20N60
20N60

0.142. sdf20n60jea sdf20n60jeb sdf20n60jec sdf20n60jed.pdf Size:68K _solitron

20N60

0.143. sdf20n60.pdf Size:154K _solitron

20N60

0.144. ssf20n60h.pdf Size:463K _silikron

20N60
20N60

SSF20N60H Main Product Characteristics: VDSS 600V RDS(on) 0.2ohm(typ.) ID 20A Marking a nd p in TO247 Sche ma ti c di agr a m Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF20N60H series MOSFETs is a new technologyw

0.145. brf20n60.pdf Size:1187K _blue-rocket-elect

20N60
20N60

BRF20N60(BRCS20N60FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features ,Ultra low gate charge, low effective output capacitance, high switch speed. / Applications

0.146. cs20n60 anh.pdf Size:437K _crhj

20N60
20N60

Silicon N-Channel Power MOSFET R CS20N60 ANH VDSS 600 V General Description ID 20 A CS20N60 ANH, the silicon N-channel Enhanced PD(TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

0.147. cs20n60f a9h.pdf Size:431K _crhj

20N60
20N60

Silicon N-Channel Power MOSFET R CS20N60F A9H VDSS 600 V General Description ID 20 A CS20N60F A9H, the silicon N-channel Enhanced PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

0.148. cs20n60 a8h.pdf Size:434K _crhj

20N60
20N60

Silicon N-Channel Power MOSFET R CS20N60 A8H VDSS 600 V General Description ID 20 A CS20N60 A8H, the silicon N-channel Enhanced PD(TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

0.149. cs20n60.pdf Size:109K _china

20N60

CS20N60 N PD TC=25 300 W 2.38 W/ ID VGS=10V,TC=25 20 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.42 /W BVDSS VGS=0V,ID=0.25mA 600 V RDS on VGS=10V,ID=10A 0.32 0.46 VGS th VDS=VGS,ID=0.25m

0.150. cm20n60p to3pb.pdf Size:140K _jdsemi

20N60
20N60

RCM20N60P www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS

0.151. cm20n60.pdf Size:126K _jdsemi

20N60
20N60

RCM20N60 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 2 3

0.152. cm20n60f.pdf Size:130K _jdsemi

20N60

RCM20N60F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 2 12 3

0.153. msw20n60.pdf Size:453K _bruckewell

20N60
20N60

Preliminary MSW20N60 500V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features RDS(on) (Typical 0.26 )@VGS=10V Gate Charge (Typical 80nC) Improved dv/dt Capability, High

0.154. wfw20n60w.pdf Size:279K _winsemi

20N60
20N60

WFW20N60WWFW20N60WWFW20N60WWFW20N60WSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 20A,600V,R (Max0.39)@V =10VDS(on) GS Ultra-low Gate charge(Typical 150nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is pro

0.155. wff20n60s.pdf Size:535K _winsemi

20N60
20N60

WFF20N60SWFF20N60SWFF20N60SWFF20N60SSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures Ultra low Rdson Ultra-low Gate charge(Typical 68nC) 100% UIS Tested RoHS compliantGeneral DescriptionWinsemi Power MOSFET is fabricated using advanced superjunction technology.The resulting device has extremely low

0.156. wff20n60.pdf Size:271K _winsemi

20N60
20N60

WFF20N60WFF20N60WFF20N60WFF20N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 20A,600V,R (Max0.39)@V =10VDS(on) GS Ultra-low Gate charge(Typical 50nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced

0.157. cs20n60fa9h.pdf Size:2676K _citcorp

20N60
20N60

CS20N60FA9H600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability.0.189(4.80)0.173(4.40) Low gate charge.0.409(10.40)0.378(9.60) 0.114(2.90) Low reverse transfer capacitances.0.098(2.50) 100% single pulse avalanche energy test.0.638(16.20)0.606(15.40)Marking code Mechanical dataG D S Ep

0.158. fhf20n60a fhp20n60a fha20n60a.pdf Size:858K _feihonltd

20N60
20N60

N N-CHANNEL MOSFET FHF20N60A/ FHP20N60A/FHA20N60A MAIN CHARACTERISTICS FEATURES Low gate charge ID 20A Crss ( 20pF) Low Crss (typical 20pF ) VDSS 600V Fast switching Rdson-typ 0.32 @Vgs=10V 100% 100% avalanche tested P (T =25) 85W D C

0.159. ps20n600a.pdf Size:303K _prospower

20N60
20N60

PS20N600A 600V Single Channel NMOSEFT Revision : 1.0Update Date : Jan. 2012 ProsPower Microelectronics Co., LtdPS20N600A 600V Single Channel NMOSFET2. Applications 1. General Description Power factor correction (PFC) The PS20N600A uses advanced high voltage Switched mode power supplies (SMPS) technology and design to provide excellent Rds(on) Uninterruptible P

0.160. hih20n60bp.pdf Size:644K _semihow

20N60
20N60

Dec 2013VCES = 600 VIC = 20 AHIH20N60BP VCE(sat) typ = 2.2 V600V PT IGBTTO-3PFEATURES Low VCE(sat)G Maximum Junction Temperature 150 CE Short Circuit Withstand Time 5 Designed for Operation Between 1-20KHz Very tight Parameter Distribution High Ruggedness, Temperature stable behaviorAbsolute Maximum RatingsSymbol Parameter Value UnitsVCES Collector-E

0.161. hia20n60bp.pdf Size:664K _semihow

20N60
20N60

Dec 2013VCES = 600 VIC = 20 AHIA20N60BP VCE(sat) typ = 2.2 V600V PT IGBTTO-247FEATURES Low VCE(sat) Maximum Junction Temperature 150 GCE Short Circuit Withstand Time 5 Designed for Operation Between 1-20KHz Very tight Parameter Distribution High Ruggedness, Temperature stable behaviorAbsolute Maximum RatingsSymbol Parameter Value UnitsVCES Collector-

0.162. tman20n60.pdf Size:694K _trinnotech

20N60
20N60

TMAN20N60 N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 20A

0.163. tman20n60a.pdf Size:505K _trinnotech

20N60
20N60

TMAN20N60A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 20A

0.164. cs20n60a8h.pdf Size:434K _wuxi_china

20N60
20N60

Silicon N-Channel Power MOSFET R CS20N60 A8H VDSS 600 V General Description ID 20 A CS20N60 A8H, the silicon N-channel Enhanced PD(TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

0.165. cs20n60anh.pdf Size:437K _wuxi_china

20N60
20N60

Silicon N-Channel Power MOSFET R CS20N60 ANH VDSS 600 V General Description ID 20 A CS20N60 ANH, the silicon N-channel Enhanced PD(TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

0.166. csfr20n60f.pdf Size:618K _convert

20N60
20N60

nvertCSFR20N60FSuzhou Convert Semiconductor Co ., Ltd.600V N-Channel MOSFETFEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capabilityAPPLICATIONSSwitch Mode Power Supply (SMPS) Motor Controls Power Factor Correction (PFC)Device Marking and Package InformationDevice Package Marki

0.167. cs20n60f cs20n60p.pdf Size:649K _convert

20N60
20N60

nvertCS20N60F,CS20N60PSuzhou Convert Semiconductor Co ., Ltd.600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS20N60F TO-220F CS20N60FCS

0.168. cs20n60f cs20n60p cs20n60w cs20n60v.pdf Size:703K _convert

20N60
20N60

CS20N60F,CS20N60P,nvertSuzhou Convert Semiconductor Co ., Ltd.CS20N60W,CS20N60V600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS20N60F

0.169. hf20n60 hp20n60.pdf Size:3405K _haolin_elec

20N60
20N60

HF20N60,HP20N60600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Absolute Maximum Ratings TC = 25 unless otherwise notedC,ValueParameter Symbol UnitTO-220TO-220F/ Drain-Source Voltage (VGS = 0V)

0.170. ha20n60.pdf Size:3552K _haolin_elec

20N60
20N60

HA20N60600V N-Channel MOSFETFEATURES Fast switching 100% avalanche testedBVDSS = 600 V Improved dv/dt capabilityRDS(on) typ = 0.34 1APPLICATIONS2ID = 20 A3 Switch Mode Power Supply (SMPS)1.Gate 2. Drain 3. Source Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package Marking

0.171. aot20n60.pdf Size:261K _inchange_semiconductor

20N60
20N60

isc N-Channel MOSFET Transistor AOT20N60FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.37(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

0.172. ixkp20n60c5.pdf Size:272K _inchange_semiconductor

20N60
20N60

isc N-Channel MOSFET Transistor IXKP20N60C5FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 180m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitched mode power suppliesUninterruptible power suppli

0.173. spi20n60c3.pdf Size:215K _inchange_semiconductor

20N60
20N60

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPI20N60C3FEATURESWith TO-262(I2PAK) packageLow input capacitance and gate chargeHigh peak current capabilityImproved transconductance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2

0.174. ixfm20n60.pdf Size:253K _inchange_semiconductor

20N60
20N60

Isc N-Channel MOSFET Transistor IXFM20N60FEATURESWith To-3 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600

0.175. spp20n60s5.pdf Size:246K _inchange_semiconductor

20N60
20N60

isc N-Channel MOSFET Transistor SPP20N60S5ISPP20N60S5FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeUltra low effective capacitanceImproved transconductanceABSOLUT

0.176. spb20n60c3.pdf Size:258K _inchange_semiconductor

20N60
20N60

Isc N-Channel MOSFET Transistor SPB20N60C3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

0.177. spb20n60s5.pdf Size:204K _inchange_semiconductor

20N60
20N60

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPB20N60S5FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIM

0.178. aotf20n60.pdf Size:252K _inchange_semiconductor

20N60
20N60

isc N-Channel MOSFET Transistor AOTF20N60FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.37(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

0.179. spw20n60c3.pdf Size:269K _inchange_semiconductor

20N60
20N60

isc N-Channel MOSFET Transistor SPW20N60C3 ISPW20N60C3FEATURESStatic drain-source on-resistance:RDS(on)190mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

0.180. fmh20n60s1.pdf Size:321K _inchange_semiconductor

20N60
20N60

isc N-Channel MOSFET Transistor FMH20N60S1FEATURESStatic Drain-Source On-Resistance: R = 190m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONDesigned for use in switch mode power supplies andgeneral purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

0.181. spa20n60c3.pdf Size:201K _inchange_semiconductor

20N60
20N60

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPA20N60C3FEATURESNew revolutionary high voltage technologyUltra low gate chargeHigh peak current capabilityImproved transconductance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

0.182. spw20n60cfd.pdf Size:245K _inchange_semiconductor

20N60
20N60

isc N-Channel MOSFET Transistor SPW20N60CFD, ISPW20N60CFDFEATURESStatic drain-source on-resistance:RDS(on)220mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

0.183. spp20n60c3.pdf Size:247K _inchange_semiconductor

20N60
20N60

isc N-Channel MOSFET Transistor SPP20N60C3ISPP20N60C3FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityImproved transconductanceABSOLUTE M

0.184. spw20n60s5.pdf Size:244K _inchange_semiconductor

20N60
20N60

isc N-Channel MOSFET Transistor SPW20N60S5ISPW20N60S5FEATURESStatic drain-source on-resistance:RDS(on)190mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60

0.185. fmp20n60s1.pdf Size:206K _inchange_semiconductor

20N60
20N60

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FMP20N60S1FEATURESWith TO-220 packagingLow switching lossLow on-state resistanceEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsDC-DC convertersUninterruptible power supplyABSOLUTE MAXIMUM RA

0.186. aok20n60l.pdf Size:377K _inchange_semiconductor

20N60
20N60

isc N-Channel MOSFET Transistor AOK20N60LFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.37(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

0.187. spa20n60cfd.pdf Size:199K _inchange_semiconductor

20N60
20N60

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPA20N60CFDFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

0.188. fmv20n60s1.pdf Size:239K _inchange_semiconductor

20N60
20N60

isc N-Channel MOSFET Transistor FMV20N60S1FEATURESLow on-resistance:RDS(on) 0.19 (max)Low switching loss100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUPS (Uninterruptible Power Supply)Power conditioner systemPower supplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

0.189. spp20n60cfd.pdf Size:247K _inchange_semiconductor

20N60
20N60

isc N-Channel MOSFET Transistor SPP20N60CFDISPP20N60CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.22Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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Recientemente añadidas las descripciónes de los transistores:

MOSFET: HSW8810 | HSW8205 | HSW6811 | HSW6800 | HSW6604 | HSW4602 | HSW3415 | HSW2N15 | HSU90N03 | HSU90N02 | HSU80N03 | HSU70P06 | HSU6903 | HSU6901 | HSU6115 | HSU6113

 

 

 
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