All MOSFET. 20N60 Datasheet

 

20N60 MOSFET. Datasheet pdf. Equivalent

Type Designator: 20N60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 416 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 130 nS

Drain-Source Capacitance (Cd): 330 pF

Maximum Drain-Source On-State Resistance (Rds): 0.32 Ohm

Package: TO-3P_TO-247_TO-230

20N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

20N60 Datasheet (PDF)

1.1. sff20n60b.pdf Size:155K _upd-mosfet

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20N60



1.2. fca20n60s fca20n60s f109.pdf Size:750K _upd-mosfet

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August 2007 TM SuperFET FCA20N60S / FCA20N60S_F109 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.22Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=55nC) lower gate charge perform

 1.3. sff20n60n sff20n60p.pdf Size:164K _upd-mosfet

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20N60



1.4. fmw20n60s1hf.pdf Size:470K _upd-mosfet

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20N60

http://www.fujielectric.com/products/semiconductor/ FMW20N60S1HF FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance TO-247-P2 Low switching loss easy to use (more controllabe switching dV/dt by R ) g Drain(D) Applications UPS Server Gate(G) Telecom ① ② ③ Source(S)

 1.5. msw20n60.pdf Size:453K _upd-mosfet

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20N60

Preliminary MSW20N60 500V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features • RDS(on) (Typical 0.26Ω )@VGS=10V • Gate Charge (Typical 80nC) • Improved dv/dt Capability, High

1.6. fcb20n60tm.pdf Size:956K _upd-mosfet

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December 2008 TM SuperFET FCB20N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. RDS(on) = 0.15Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg = 75nC) lower gate charge performance. •

1.7. fcb20n60ftm.pdf Size:1144K _upd-mosfet

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December 2008 TM SuperFET FCB20N60F 600V N-CHANNEL FRFET Features Description • 650V @ TJ = 150°C SuperFETTM is,Fairchild' s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.15Ω balance mechanism for outstanding low on-resistance and • Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This a

1.8. fca20n60fs.pdf Size:952K _upd-mosfet

20N60
20N60

December 2008 TM SuperFET FCA20N60F 600V N-CHANNEL FRFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.15Ω balance mechanism for outstanding low on-resistance and • Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This a

1.9. fmv20n60s1.pdf Size:448K _upd-mosfet

20N60
20N60

http://www.fujielectric.com/products/semiconductor/ FMV20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance TO-220F(SLS) Low switching loss easy to use (more controllabe switching dV/dt by R ) g Drain(D) Applications UPS Server Gate(G) Telecom Source(S) Power condi

1.10. tman20n60a.pdf Size:505K _upd-mosfet

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TMAN20N60A N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 600V 20A < 0.33W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification Device Package Marking Remark TMAN20N60A TO-3PN TMAN20N60A RoHS Absolute Maximum Ratings Parameter Symbol TMAN20N60A Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS

1.11. fch20n60.pdf Size:965K _upd-mosfet

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December 2008 TM SuperFET FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.15Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=55nC) lower gate cha

1.12. tman20n60.pdf Size:694K _upd-mosfet

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TMAN20N60 N-channel MOSFET Features BVDSS ID RDS(on)MAX  Low gate charge 600V 20A <0.33W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification D G S Device Package Marking Remark TMAN20N60 TO-3PN TMAN20N60 RoHS Absolute Maximum Ratings Parameter Symbol TMAN20N60 Unit Drain-Source Voltage VDS 600 V Gate-Source Vo

1.13. fmp20n60s1.pdf Size:410K _upd-mosfet

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http://www.fujielectric.com/products/semiconductor/ FMP20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance 4.5±0.2 TO-220 10+0.5 0 1.3±0.2 Low switching loss easy to use (more controllabe switching dV/dt by R ) g Drain(D) Applications UPS 1.2 ±0.2 Server PRE-S

1.14. fcp20n60fs.pdf Size:1056K _upd-mosfet

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December 2008 TM SuperFET FCP20N60 / FCPF20N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. RDS(on) = 0.15Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg = 75nC) lower gate charge perfo

1.15. ps20n600a.pdf Size:303K _update_mosfet

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PS20N600A 600V Single Channel NMOSEFT Revision : 1.0 Update Date : Jan. 2012 ProsPower Microelectronics Co., Ltd  PS20N600A 600V Single Channel NMOSFET 2. Applications 1. General Description Power factor correction (PFC) The PS20N600A uses advanced high voltage Switched mode power supplies (SMPS) technology and design to provide excellent Rds(on) Uninterruptible P

1.16. wff20n60s.pdf Size:535K _update_mosfet

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WFF20N60S WFF20N60S WFF20N60S WFF20N60S Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � Ultra low Rdson � Ultra-low Gate charge(Typical 68nC) � 100% UIS Tested � RoHS compliant General Description Winsemi Power MOSFET is fabricated using advanced super junction technology.The resulting device has extremely low

1.17. wff20n60.pdf Size:271K _update_mosfet

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WFF20N60 WFF20N60 WFF20N60 WFF20N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 20A,600V,R (Max0.39Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 50nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced

1.18. mgw20n60d.pdf Size:209K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW20N60D/D Designer's? Data Sheet MGW20N60D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode NChannel EnhancementMode Silicon Gate IGBT & DIODE IN TO247 20 A @ 90C This Insulated Gate Bipolar Transistor (IGBT) is copackaged 32 A @ 25C with a soft recovery ultrafast rectifier and u

1.19. mgp20n60u.pdf Size:125K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N60U/D Designer's? Data Sheet MGP20N60U Insulated Gate Bipolar Transistor NChannel EnhancementMode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO220 termination scheme to provide an enhanced and reliable high 20 A @ 90C voltageblocking capability. It also provides low onvolta

1.20. mgp20n60urev0.pdf Size:120K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N60U/D Product Preview MGP20N60U Insulated Gate Bipolar Transistor NChannel EnhancementMode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO220 termination scheme to provide an enhanced and reliable high 20 A @ 90C voltageblocking capability. It also provides fast switching char

1.21. mgw20n60.pdf Size:246K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW20N60D/D Designer's? Data Sheet MGW20N60D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode NChannel EnhancementMode Silicon Gate IGBT & DIODE IN TO247 20 A @ 90C This Insulated Gate Bipolar Transistor (IGBT) is copackaged 32 A @ 25C with a soft recovery ultrafast rectifier and u

1.22. tk20n60w5.pdf Size:239K _toshiba2

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TK20N60W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK20N60W5 TK20N60W5 TK20N60W5 TK20N60W5 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.15 Ω (typ.) by used to Super Junction Str

1.23. tk20n60w.pdf Size:245K _toshiba2

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TK20N60W MOSFETs Silicon N-Channel MOS (DTMOS) TK20N60W TK20N60W TK20N60W TK20N60W 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) En

1.24. fca20n60 f109.pdf Size:481K _fairchild_semi

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August 2014 FCA20N60 N-Channel SuperFET® MOSFET 600 V, 20 A, 190 mΩ Features Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera- • 650V @ TJ = 150°C tion of high voltage super-junction (SJ) MOSFET family that is • Typ. RDS(on) = 150 mΩ utilizing charge balance technology for outstanding low on- • Ultra Low Gate Charge (Typ. Qg = 75 nC ) resistance an

1.25. sgh20n60rufd.pdf Size:678K _fairchild_semi

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1.26. fgh20n60ufd.pdf Size:1073K _fairchild_semi

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April 2011 FGH20N60UFD 600V, 20A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new series of Field Stop IGBTs offer the optimum performance for Induc- Low saturation voltage: VCE(sat) =1.8V @ IC = 20A tion Heating, UPS, SMPS and PFC applications where low con- High input impedance duction and switching losses

1.27. hgtg20n60a4d.pdf Size:148K _fairchild_semi

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HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode >100kHz Operation At 390V, 20A The HGTG20N60A4D is a MOS gated high voltage switching 200kHz Operation At 390V, 12A device combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. This device has the high input impedance of a MOS

1.28. fcp20n60.pdf Size:613K _fairchild_semi

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August 2014 FCP20N60 / FCPF20N60 N-Channel SuperFET® MOSFET 600 V, 20 A, 190 mΩ Features Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera- • 650V @ TJ = 150°C tion of high voltage super-junction (SJ) MOSFET family that is • Typ. RDS(on) = 150 mΩ utilizing charge balance technology for outstanding low on- • Ultra Low Gate Charge (Typ. Qg = 75 nC ) r

1.29. hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf Size:140K _fairchild_semi

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HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices 45A, 600V, TC = 25oC combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . . . . 108n

1.30. fcp20n60 fcpf20n60.pdf Size:1056K _fairchild_semi

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December 2008 TM SuperFET FCP20N60 / FCPF20N60 600V N-Channel MOSFET Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.15? balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 75nC) lower gate charge performance. Low

1.31. fcb20n60f.pdf Size:1152K _fairchild_semi

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December 2008 TM SuperFET FCB20N60F 600V N-CHANNEL FRFET Features Description 650V @ TJ = 150C SuperFETTM is,Fairchild' s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15? balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This advanced tech

1.32. hgtg20n60a4 hgtp20n60a4.pdf Size:136K _fairchild_semi

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HGTG20N60A4, HGTP20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated >100kHz Operation at 390V, 20A high voltage switching devices combining the best features 200kHz Operation at 390V, 12A of MOSFETs and bipolar transistors. These devices have the 600V Switching SOA Capability high input impedance of a MOSFET a

1.33. fcpf20n60.pdf Size:613K _fairchild_semi

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August 2014 FCP20N60 / FCPF20N60 N-Channel SuperFET® MOSFET 600 V, 20 A, 190 mΩ Features Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera- • 650V @ TJ = 150°C tion of high voltage super-junction (SJ) MOSFET family that is • Typ. RDS(on) = 150 mΩ utilizing charge balance technology for outstanding low on- • Ultra Low Gate Charge (Typ. Qg = 75 nC ) r

1.34. fcd620n60zf.pdf Size:619K _fairchild_semi

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November 2013 FCD620N60ZF N-Channel SuperFET® II FRFET® MOSFET 600 V, 7.3 A, 620 mΩ Features Description • 650 V @ TJ = 150oC SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 528 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 20 nC)

1.35. fca20n60.pdf Size:481K _fairchild_semi

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August 2014 FCA20N60 N-Channel SuperFET® MOSFET 600 V, 20 A, 190 mΩ Features Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera- • 650V @ TJ = 150°C tion of high voltage super-junction (SJ) MOSFET family that is • Typ. RDS(on) = 150 mΩ utilizing charge balance technology for outstanding low on- • Ultra Low Gate Charge (Typ. Qg = 75 nC ) resistance an

1.36. fgh20n60sfd.pdf Size:791K _fairchild_semi

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September 2008 FGH20N60SFD tm 600V, 20A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new series of Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =2.2V @ IC = 20A Heating, UPS, SMPS and PFC applications where low conduc- High input impedance tion and switching

1.37. fcb20n60 f085.pdf Size:363K _fairchild_semi

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November 2013 FCB20N60_F085 N-Channel MOSFET 600V, 20A, 198mΩ D D Features Typ rDS(on) = 173mΩ at VGS = 10V, ID = 20A Typ Qg(tot) = 72nC at VGS = 10V, ID = 20A G UIS Capability RoHS Compliant G Qualified to AEC Q101 S S Description SuperFETTM is Fairchild’s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance For current packa

1.38. fgp20n60ufd.pdf Size:740K _fairchild_semi

20N60
20N60

October 2008 FGP20N60UFD tm 600V, 20A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new series of Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =1.8V @ IC = 20A Heating, UPS, SMPS and PFC applications where low conduc- High input impedance tion and switching lo

1.39. fcb20n60.pdf Size:964K _fairchild_semi

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December 2008 TM SuperFET FCB20N60 600V N-Channel MOSFET Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.15? balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 75nC) lower gate charge performance. Low effective o

1.40. fcb20n60f f085.pdf Size:354K _fairchild_semi

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December 2013 FCB20N60F_F085 N-Channel MOSFET 600V, 20A, 190mΩ D D Features Typ rDS(on) = 171mΩ at VGS = 10V, ID = 20A Typ Qg(tot) = 78nC at VGS = 10V, ID = 20A G UIS Capability RoHS Compliant G Qualified to AEC Q101 S S Description SuperFETTM is Fairchild’s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance For current pack

1.41. fca20n60f.pdf Size:952K _fairchild_semi

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December 2008 TM SuperFET FCA20N60F 600V N-CHANNEL FRFET Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15? balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This advanced techn

1.42. hgtg20n60b3d.pdf Size:176K _fairchild_semi

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HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 40A, 600V at TC = 25oC The HGTG20N60B3D is a MOS gated high voltage Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC switching device combining the best features of MOSFETs Short Circuit Rated and bipolar transistors. The device has the high

1.43. hgtg20n60b3.pdf Size:236K _fairchild_semi

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HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high 40A, 600V at TC = 25oC voltage switching devices combining the best features of 600V Switching SOA Capability MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC high input

1.44. fch20n60 fca20n60 fca20n60 f109.pdf Size:971K _fairchild_semi

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December 2008 TM SuperFET FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15? balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge performanc

1.45. sgh20n60rufd.pdf Size:270K _samsung

20N60
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CO-PAK IGBT SGH20N60RUFD FEATURES TO-3P * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=20A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS S

1.46. sgp20n60ruf.pdf Size:231K _samsung

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N-CHANNEL IGBT SGP20N60RUF FEATURES TO-220 * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=20A * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 6

1.47. sgw20n60ruf.pdf Size:231K _samsung

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N-CHANNEL IGBT SGW20N60RUF FEATURES D2-PAK * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=20A * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 6

1.48. zds020n60.pdf Size:1149K _rohm

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Data Sheet 10V Drive Nch MOSFET ZDS020N60 ? Structure ? Dimensions (Unit : mm) SOP8 Silicon N-channel MOSFET (8) (5) ?Features 1) Low on-resistance. 2) High-speed switching. (1) (4) 3) Wide SOA. ? Application Switching ? Packaging specifications ? Inner circuit Package Taping (8) (7) (6) (5) Type Code TB Basic ordering unit (pieces) 2500 ZDS020N60 ? (1) Source ?1 (2) Source

1.49. spp20n60cfd rev.2.6.pdf Size:643K _infineon

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SPP20N60CFD C??I MOS P?wer Transist?r VDS @ Tjmax 650 V Feature RDS(on) 0.22 New revolutionary high voltage technology ID 20.7 A Worldwide best RDS(on) in TO 220 PG-TO220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge Type Package Ordering C?de Mar

1.50. skw20n60hs rev2 3g.pdf Size:346K _infineon

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SKW20N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribution High ruggedness, temperature stab

1.51. spp20n60s5.pdf Size:129K _infineon

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SPP20N60S5 Final data SPB20N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.19 ? New revolutionary high voltage technology ID 20 A Worldwide best RDS(on) in TO 220 P-TO263-3-2 P-TO220-3-1 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunity Type Package Ordering Code Marking SPP20N60S5

1.52. sgp20n60 sgw20n60 rev2.pdf Size:331K _infineon

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SGP20N60 SGW20N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for: E - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching

1.53. skw20n60 rev2 2g.pdf Size:315K _infineon

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SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature s

1.54. igp20n60h3 rev1 2g.pdf Size:1611K _infineon

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IGBT High speed IGBT in Trench and Fieldstop technology IGP20N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGP20N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features: C TRENCHSTOPTM technology offering very low V CEsat low EMI maximum junction temperature 175C G qualif

1.55. spb20n60s5 rev.2.3.pdf Size:665K _infineon

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SPB20N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.19 ? New revolutionary high voltage technology ID 20 A PG-TO263 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPB20N60S5 PG-TO263 Q67040-S4171 20N60S5 Maximum Ratings Parameter Symbol Value

1.56. ikw20n60h3 rev1 2g.pdf Size:1642K _infineon

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IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW20N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IKW20N60H3 High speed switching series third generation High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode C Features: TRENCHS

1.57. spp20n60c3 spi20n60c3 spa20n60c3.pdf Size:1832K _infineon

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SPP20N60C3 SPI20N60C3, SPA20N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.19 ? New revolutionary high voltage technology ID 20.7 A Worldwide best RDS(on) in TO 220 PG-TO220FP PG-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 P-TO220-3-31 High peak current capability Improved transconductance PG-TO-22

1.58. spw20n60s5 rev[1].2.5 pcn.pdf Size:768K _infineon

20N60
20N60

SPW20N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.19 ? New revolutionary high voltage technology ID 20 A Ultra low gate charge PG-TO247 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPW20N60S5 PG-TO247 Q67040-S4238 20N60S5 Maximum Ratings Parameter Symbol Value

1.59. spw20n60cfd rev[1].2.5 pcn.pdf Size:2950K _infineon

20N60
20N60

Please note the new package dimensions arccording to PCN 2009?1 4?A Please note the new package dimensions arccording to PCN 2009?1 4?A Please note the new package dimensions arccording to PCN 2009?1 4?A Please note the new package dimensions arccording to PCN 2009?1 4?A Please note the new package dimensions arccording to PCN 2009?1 4?A Please note the new package dimensions arccording

1.60. igb20n60h3 rev1 1g.pdf Size:1454K _infineon

20N60
20N60

IGBT High speed IGBT in Trench and Fieldstop technology IGB20N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGB20N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features: C TRENCHSTOPTM technology offering very low V CEsat low EMI maximum junction temperature 175C G qualif

1.61. sgb20n60 rev2 2.pdf Size:790K _infineon

20N60
20N60

SGB20N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for: E - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D?-PAK) - paral

1.62. ikp20n60h3 rev1.1g.pdf Size:1698K _infineon

20N60
20N60

IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKP20N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IKP20N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology C Features: TRENCHSTOPTM technology offering very low V CEsat low

1.63. ikp20n60t ikw20n60t rev2 5g.pdf Size:449K _infineon

20N60
20N60

IKP20N60T TrenchStop Series IKW20N60T Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G E Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technolo

1.64. spp20n60s5 rev.2.8.pdf Size:370K _infineon

20N60
20N60

SPP20N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.19 ? New revolutionary high voltage technology ID 20 A Worldwide best RDS(on) in TO 220 PG-TO220 Ultra low gate charge 2 Periodic avalanche rated Extreme dv/dt rated 3 2 1 Ultra low effective capacitances P-TO220-3-1 Improved transconductance Type Package Ordering Code Marking 20N60S5 SPP20N60S5 P

1.65. igw20n60h3 rev1 1g.pdf Size:1562K _infineon

20N60
20N60

IGBT High speed IGBT in Trench and Fieldstop technology IGW20N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGW20N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features: C TRENCHSTOPTM technology offering very low V CEsat low EMI Very soft, fast recovery anti-parallel diode G

1.66. sgp20n60 sgw20n60 rev2 4g.pdf Size:358K _infineon

20N60
20N60

SGP20N60 SGW20N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for: E - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching

1.67. spw20n60c3 rev[1].2.5 pcn.pdf Size:765K _infineon

20N60
20N60

VDS Tjmax ? G G-TO247

1.68. sgp20n60hs sgw20n60hs rev2 5g.pdf Size:382K _infineon

20N60
20N60

SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribution Hig

1.69. ikb20n60trev2 4g.pdf Size:1220K _infineon

20N60
20N60

IKB20N60T TrenchStop Series p Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G E Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners TrenchStop and Fieldstop

1.70. spb20n60c3 rev.2.8.pdf Size:782K _infineon

20N60
20N60

VDS Tjmax ? G 3 G

1.71. spa20n60cfd rev1.3.pdf Size:466K _infineon

20N60
20N60

SPA20N60CFD CoolMOSTM Power Transistor Product Summary Features V 600 V DS New revolutionary high voltage technology R 0.22 DS(on),max Intrinsic fast-recovery body diode 1) 20.7 A I D Extremely low reverse recovery charge Ultra low gate charge PG-TO220-3-31 Extreme dv /dt rated High peak current capability Periodic avalanche rated Qualified for industrial grade

1.72. spp20n60c3 spi20n60c3 spa20n60c3 rev3.2.pdf Size:683K _infineon

20N60
20N60

SPP20N60C3 SPI20N60C3, SPA20N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.19 ? New revolutionary high voltage technology ID 20.7 A Worldwide best RDS(on) in TO 220 PG-TO220FP PG-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 P-TO220-3-31 High peak current capability Improved transconductance PG-TO-22

1.73. spi20n60cfd rev.2.5.pdf Size:554K _infineon

20N60
20N60

SPI20N60CFD C??I MOS P?wer Transist?r VDS @ Tjmax 650 V Feature RDS(on) 0.22 New revolutionary high voltage technology ID 20.7 A Worldwide best RDS(on) in TO 220 PG-TO262 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge Qualified for industrial grade

1.74. ikb20n60h3 rev1 1g.pdf Size:1537K _infineon

20N60
20N60

IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKB20N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IKB20N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology C Features: TRENCHSTOPTM technology offering very low V CEsat low

1.75. sgp20n60hs sgw20n60hs rev2.pdf Size:354K _infineon

20N60
20N60

SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribution Hig

1.76. ixth20n60 ixtm20n60.pdf Size:105K _ixys

20N60
20N60

IXTH 20N60 VDSS = 600 V MegaMOSTMFET IXTM 20N60 ID25 = 20 A ? RDS(on) = 0.35 ? ? ? ? N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25C 15N60 15 A TO-204 AE (IXTM) 20N60 20 A IDM TC = 25C, pulse width limited by T

1.77. ixfh20n60q ixft20n60q.pdf Size:144K _ixys

20N60
20N60

IXFH 20N60Q VDSS = 600 V HiPerFETTM IXFT 20N60Q ID25 = 20 A Power MOSFETs Ω RDS(on) = 0.35 Ω Ω Ω Ω Q-Class ≤ trr ≤ ≤ 250ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS C

1.78. ixkp20n60c5m.pdf Size:101K _ixys

20N60
20N60

IXKP 20N60C5M ID25 = 7.6 A CoolMOS 1) Power MOSFET VDSS = 600 V RDS(on) max = 0.2 ? Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET D TO-220 FP Ultra low gate charge G D G S Preliminary data S Features MOSFET fast CoolMOS 1) power MOSFET Symbol Conditions Maximum Ratings 4th generation VDSS TVJ = 25C 600 V - High blocking capability V

1.79. ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf Size:316K _ixys

20N60
20N60

Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine

1.80. ixkc20n60c.pdf Size:172K _ixys

20N60
20N60

IXKC 20N60C VDSS = 600 V CoolMOS 1) Power MOSFET ID25 = 15 A RDS(on) max = 190 m? Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode D ISOPLUS220TM Low RDSon, high VDSS MOSFET Ultra low gate charge G G D S isolated tab S E72873 Features MOSFET Silicon chip on Direct-Copper-Bond Symbol Conditions Maximum Ratings substrate VDSS TVJ

1.81. ixgk120n60b ixgx120n60b.pdf Size:601K _ixys

20N60
20N60

HiPerFASTTM IGBT IXGK 120N60B VCES = 600 V IXGX 120N60B IC25 = 200 A VCE(sat) = 2.1 V Symbol Test Conditions Maximum Ratings PLUS 247TM (IXGX) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGS = 1 M? 600 V VCES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25C 200 A TO-264 AA IC90 TC = 90C 120 A (IXGK) IL(RMS) External lead limit 76 A ICM TC = 25C, 1 ms

1.82. ixgk120n60b3-ixgx120n60b3.pdf Size:197K _ixys

20N60
20N60

VCES = 600V GenX3TM 600V IXGK120N60B3 IC110 = 120A IXGX120N60B3 IGBTs ? VCE(sat) ? ?? 1.8V ? ? tfi(typ) = 145ns Medium-Speed-Low-Vsat PT IGBTs for 5-40kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25C to 150C 600 V C E VCGR TJ = 25C to 150C, RGE = 1M? 600 V Tab VGES Continuous 20 V VGEM Transient 30 V PLUS247TM (IXGX) IC25 TC = 25C (C

1.83. ixgh20n60-a ixgm20n60-a.pdf Size:64K _ixys

20N60
20N60

VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH/IXGM 20 N60 600 V 40 A 2.5 V High speed IGBT IXGH/IXGM 20 N60A 600 V 40 A 3.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25C40 A IC90 TC = 90C20 A TO-204 AE (IXGM) ICM TC = 25C, 1 ms 80 A SSOA VG

1.84. ixfh15n60 ixfh20n60 ixfm15n60 ixfm20n60.pdf Size:82K _ixys

20N60
20N60

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 15 N60 600 V 15 A 0.50 W Power MOSFETs IXFH/IXFM 20 N60 600 V 20 A 0.35 W trr ? 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 MW 600 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 15N60

1.85. ixgr120n60b.pdf Size:560K _ixys

20N60
20N60

HiPerFASTTM IGBT IXGR 120N60B VCES = 600 V IC25 = 156 A ISOPLUS247TM (Electrically Isolated Back Surface) VCE(sat) = 2.1 V Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V VGEM Transient 30 V G C E Isolated Backside* IC25 TC = 25C 156 A IC110 TC = 110C 102 A IL(RMS) External

1.86. ixgk120n60c2 ixgx120n60c2.pdf Size:925K _ixys

20N60
20N60

ADVANCE TECHNICAL INFORMATION VCES = 600 V HiPerFASTTM IGBT IXGK 120N60C2 IC110 = 120 A Lightspeed 2TM Series IXGX 120N60C2 VCE(sat) = 2.5 V tfi(typ) = 45 ns Symbol Test Conditions Maximum Ratings TO-264(IXGK) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) E IC25 TC = 25C (limited by leads) 75 A IC11

1.87. ixgn120n60a3-a3d1.pdf Size:202K _ixys

20N60
20N60

VCES = 600V IXGN120N60A3 GenX3TM 600V IGBT IXGN120N60A3D1 IC110 = 120A ? VCE(sat) ? ? 1.35V ? ? Ultra-low Vsat PT IGBTs for up to 5kHz switching SOT-227B, miniBLOC E153432 E E 60A3 60A3D1 G Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V E VCGR TJ = 25C to 150C, RGE = 1M? 600 V C VGES Continuous 20 V G = Gate, C = Collector, E = Emitter VGEM Tran

1.88. ixsh20n60b2d1.pdf Size:592K _ixys

20N60
20N60

IXSH 20N60B2D1 VCES = 600 V High Speed IGBT IC25 = 35 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25C35 A G = Gate C = Collector IC110 TC = 110C20 A E = Emitter TA

1.89. ixgr120n60c2.pdf Size:94K _ixys

20N60
20N60

ADVANCE TECHNICAL INFORMATION VCES = 600 V HiPerFASTTM IGBT IXGR 120N60C2 IC110 = 60 A ISOPLUS247TM VCE(sat) = 2.7 V Lightspeed 2TM Series tfi(typ) = 45 ns (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25C to 150C 600 V (IXGR) VCGR TJ = 25C to 150C; RGE = 1 M? 600 V C (ISOLATED TAB) VGES Continuous 20 V E VGEM Transient 3

1.90. 20n60.pdf Size:203K _utc

20N60
20N60

UNISONIC TECHNOLOGIES CO., LTD 20N60 Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand h

1.91. apt20n60bc3.pdf Size:194K _apt

20N60
20N60

APT20N60BC3 APT20N60SC3 Ω 600V 20.7A 0.190Ω Ω Ω Ω Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors • Ultra low RDS(ON) • Low Miller Capacitance D • Ultra Low Gate Charge, Qg • Avalanche Energy Rated G • TO-247 or Surface Mount D3PAK Package S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT17N80BC3_S

1.92. fmh20n60s1.pdf Size:701K _fuji

20N60
20N60

http://www.fujielectric.com/products/semiconductor/ FMH20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Pb-free lead terminal TO-3P(Q) φ3.2± 0.1 15.5max 1.5±0.2 13 ± 0.2 4.5±0.2 RoHS compliant 10 ± 0.2 ②Drain Applications For switching +0.3 +0.3 1.6 -0.1 1.6 -0.1 +0.3 2.2 -0

1.93. kgt20n60kda.pdf Size:444K _kec

20N60
20N60

SEMICONDUCTOR KGT20N60KDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency B A O S K and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. DIM MILLIMETERS _ + A 15.90 0.30 _ B 5.00 + 0.20 FEATURES _ C 20.85 + 0.30 _ D 3.00 + 0.20

1.94. ixgn120n60a3d1.pdf Size:200K _igbt

20N60
20N60

VCES = 600V IXGN120N60A3 GenX3TM 600V IGBT IXGN120N60A3D1 IC110 = 120A ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ Ultra-low Vsat PT IGBTs for up to 5kHz switching SOT-227B, miniBLOC E153432 E E 60A3 60A3D1 G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V C VGES Continuous ±20 V G = Gate, C = Collector, E =

1.95. sgh20n60rufd.pdf Size:632K _igbt

20N60
20N60

September 2000 IGBT SGH20N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD • Short Circuit rated 10us @ TC = 100°C, VGE = 15V series provides low conduction and switching losses as well • High Speed Switching as short circuit ruggedness. RUFD series is designed for • Low Saturation Voltage : VCE(sat) = 2.2 V @

1.96. ixga20n60b.pdf Size:77K _igbt

20N60
20N60

IXGA 20N60B VCES = 600 V HiPerFASTTM IGBT IXGP 20N60B IC25 = 40 A VCE(sat)typ = 1.7 V tfi = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V G VGEM Transient ±30 V C E IC25 TC = 25°C 40 A IC90 TC = 90°C 20 A TO-263 AA (IXGA) ICM TC = 25°C,

1.97. ixdp20n60b.pdf Size:277K _igbt

20N60
20N60

IXDP 20N60 B VCES = 600 V High Voltage IGBT IXDP 20N60 BD1 IC25 = 32 A with optional Diode VCE(sat) typ = 2.2 V High Speed, Low Saturation Voltage C C TO-220 AB G G G C E C (TAB) E E G = Gate, E = Emitter IXDP 20N60B IXDP 20N60B D1 C = Collector , TAB = Collector Symbol Conditions Maximum Ratings Features NPT IGBT technology VCES TJ = 25°C to 150°C 600 V low switching l

1.98. sgw20n60.pdf Size:359K _igbt

20N60
20N60

 SGP20N60 SGW20N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G • Designed for: E - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

1.99. skw20n60hs.pdf Size:853K _igbt

20N60
20N60

 SKW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-247-3-21 - moderate Eoff increase with temperature - very tight parameter distribution • High ruggednes

1.100. ixgk320n60a3.pdf Size:199K _igbt

20N60
20N60

GenX3TM 600V IGBTs VCES = 600V IXGK320N60A3 IC25 = 320A IXGX320N60A3 ≤ VCE(sat) ≤ ≤ 1.25V ≤ ≤ Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V C Tab E E VGES Continuous ±20 V VGEM Transient ±30 V PLUS247TM (IXGX) IC25 TC = 25°C (C

1.101. kgt20n60kda.pdf Size:441K _igbt

20N60
20N60

SEMICONDUCTOR KGT20N60KDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency B A O S K and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. DIM MILLIMETERS _ + A 15.90 0.30 _ B 5.00 + 0.20 FEATURES _ C 20.85 + 0.30 _ D 3.00 + 0.20

1.102. mmix1g320n60b3.pdf Size:243K _igbt

20N60
20N60

Advance Technical Information GenX3TM 600V VCES = 600V MMIX1G320N60B3 IC25 = 400A IGBT ≤ VCE(sat) ≤ ≤ 1.50V ≤ ≤ Medium-Speed Low-Vsat PT IGBTs for 5-40 kHz Switching C G E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V Isolated Tab VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V C VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 4

1.103. sgb20n60.pdf Size:787K _igbt

20N60
20N60

 SGB20N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G • Designed for: E - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D²

1.104. skw20n60.pdf Size:469K _igbt

20N60
20N60

SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C  75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s G E  Designed for: - Motor controls - Inverter  NPT-Technology for 600V applications offers: - very tight parameter distribution - high rugged

1.105. ixgk120n60a3.pdf Size:211K _igbt

20N60
20N60

GenX3TM A3-Class IXGK120N60A3 VCES = 600V IXGX120N60A3 IC110 = 120A IGBTS ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G (TAB) C VGES Continuous ±20 V E E VGEM Transient ±30 V IC25 TC = 25°C 200 A PLUS 2

1.106. ixdp20n60bd1.pdf Size:277K _igbt

20N60
20N60

IXDP 20N60 B VCES = 600 V High Voltage IGBT IXDP 20N60 BD1 IC25 = 32 A with optional Diode VCE(sat) typ = 2.2 V High Speed, Low Saturation Voltage C C TO-220 AB G G G C E C (TAB) E E G = Gate, E = Emitter IXDP 20N60B IXDP 20N60B D1 C = Collector , TAB = Collector Symbol Conditions Maximum Ratings Features NPT IGBT technology VCES TJ = 25°C to 150°C 600 V low switching l

1.107. ixgh20n60b.pdf Size:79K _igbt

20N60
20N60

VCES = 600 V IXGH 20N60B HiPerFASTTM IGBT IC25 = 40 A IXGT 20N60B VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-268 (D3) (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V G (TAB) E VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C40 A TO-247 AD (IXGH) IC90 TC = 90°C20 A ICM T

1.108. ixgk120n60b3.pdf Size:194K _igbt

20N60
20N60

VCES = 600V GenX3TM 600V IXGK120N60B3 IC110 = 120A IXGX120N60B3 IGBTs ≤ VCE(sat) ≤ ≤£ 1.8V ≤ ≤ tfi(typ) = 145ns Medium-Speed-Low-Vsat PT IGBTs for 5-40kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 600 V C E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V Tab VGES Continuous ±20 V VGEM Transient ±30 V PLUS247TM (IXG

1.109. ixgk120n60b.pdf Size:154K _igbt

20N60
20N60

HiPerFASTTM IGBTs VCES = 600V IXGK120N60B IC90 = 120A IXGX120N60B ≤ VCE(sat) ≤ 2.1V ≤ ≤ ≤ TO-264 (IXGK) G Symbol Test Conditions Maximum Ratings C E VCES TJ = 25°C to 150°C 600 V Tab VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V PLUS247 (IXGX) VGEM Transient ±30 V IC25 TC = 25°C ( Chip Capability ) 200 A IC90 TC = 90°C 120 A ILRMS Termin

1.110. ixgn120n60a3.pdf Size:200K _igbt

20N60
20N60

VCES = 600V IXGN120N60A3 GenX3TM 600V IGBT IXGN120N60A3D1 IC110 = 120A ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ Ultra-low Vsat PT IGBTs for up to 5kHz switching SOT-227B, miniBLOC E153432 E E 60A3 60A3D1 G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V C VGES Continuous ±20 V G = Gate, C = Collector, E =

1.111. ixgk120n60c2.pdf Size:186K _igbt

20N60
20N60

Preliminary Technical Information VCES = 600V HiPerFASTTM IGBT IXGK120N60C2 Lightspeed 2TM Series IC110 = 120A IXGX120N60C2 ≤ ≤ VCE(sat) ≤ 2.5V ≤ ≤ tfi(typ) = 80ns TO-264(IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G VGES Continuous ± 20 V C (TAB) E VGEM Transient ± 30 V IC25 TC = 25°

1.112. sgp20n60.pdf Size:359K _igbt

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 SGP20N60 SGW20N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G • Designed for: E - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

1.113. sgp20n60hs.pdf Size:352K _igbt

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 SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distri

1.114. ixgk320n60b3.pdf Size:193K _igbt

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Preliminary Technical Information GenX3TM 600V VCES = 600V IXGK320N60B3 IC90 = 320A IGBTs IXGX320N60B3 ≤ VCE(sat) ≤ ≤ 1.6V ≤ ≤ Medium-Speed Low-Vsat PT IGBTs for 5-40 kHz Switching TO-264 (IXGK) G Symbol Test Conditions Maximum Ratings C E VCES TJ = 25°C to 150°C 600 V Tab VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V PLUS247 (IXGX) VGEM T

1.115. ixgn320n60a3.pdf Size:166K _igbt

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VCES = 600V IXGN320N60A3 GenX3TM 600V IGBT IC25 = 320A ≤ VCE(sat) ≤ ≤ 1.25V ≤ ≤ Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC Symbol Test Conditions Maximum Ratings E153432 VCES TJ = 25°C to 150°C 600 V E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G VGES Continuous ±20 V VGEM Transient ±30 V E IC25 TC = 25°C (Chip Capability) 320 A

1.116. sgw20n60hs.pdf Size:383K _igbt

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 SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distri

1.117. ixgh20n60bd1.pdf Size:52K _igbt

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IXGH 20N60BD1 HiPerFASTTM IGBT VCES = 600 V IXGT 20N60BD1 with Diode IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V TO-247 AD IC25 TC = 25°C40 A (IXGH) IC90 TC = 90°C20 A

1.118. ixgx120n60a3.pdf Size:211K _igbt_a

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GenX3TM A3-Class IXGK120N60A3 VCES = 600V IXGX120N60A3 IC110 = 120A IGBTS ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G (TAB) C VGES Continuous ±20 V E E VGEM Transient ±30 V IC25 TC = 25°C 200 A PLUS 2

1.119. ixsh20n60au1.pdf Size:82K _igbt_a

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Not for new designs VCES IC25 VCE(sat) Low VCE(sat) IGBT with Diode IXSH 20 N60U1 600 V 40 A 2.5 V High Speed IGBT with Diode IXSH 20 N60AU1 600 V 40 A 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC

1.120. hgtg20n60c3r.pdf Size:112K _igbt_a

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HGTG20N60C3R, HGTP20N60C3R, S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description • 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as • 600V Switching SOA Capability other high voltage switching applications. These

1.121. ikp20n60h3.pdf Size:1648K _igbt_a

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IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKP20N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IKP20N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology C Features: TRENCHSTOPTM technology offering • very low V CEsat

1.122. hih20n60bp.pdf Size:644K _igbt_a

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Dec 2013 VCES = 600 V IC = 20 A HIH20N60BP VCE(sat) typ = 2.2 V 600V PT IGBT TO-3P FEATURES Low VCE(sat) G Maximum Junction Temperature 150 C E Short Circuit Withstand Time 5 Designed for Operation Between 1-20KHz Very tight Parameter Distribution High Ruggedness, Temperature stable behavior Absolute Maximum Ratings Symbol Parameter Value Units VCES Collector-E

1.123. hia20n60bp.pdf Size:664K _igbt_a

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Dec 2013 VCES = 600 V IC = 20 A HIA20N60BP VCE(sat) typ = 2.2 V 600V PT IGBT TO-247 FEATURES Low VCE(sat) Maximum Junction Temperature 150 G C E Short Circuit Withstand Time 5 Designed for Operation Between 1-20KHz Very tight Parameter Distribution High Ruggedness, Temperature stable behavior Absolute Maximum Ratings Symbol Parameter Value Units VCES Collector-

1.124. hgtp20n60c3r.pdf Size:112K _igbt_a

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HGTG20N60C3R, HGTP20N60C3R, S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description • 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as • 600V Switching SOA Capability other high voltage switching applications. These

1.125. kgf20n60kda.pdf Size:1523K _igbt_a

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SEMICONDUCTOR KGF20N60KDA TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES ·High speed switching ·High ruggedness, temperature stable behavior ·Short Circuit Withstand T

1.126. ixgt20n60b.pdf Size:79K _igbt_a

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VCES = 600 V IXGH 20N60B HiPerFASTTM IGBT IC25 = 40 A IXGT 20N60B VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-268 (D3) (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V G (TAB) E VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C40 A TO-247 AD (IXGH) IC90 TC = 90°C20 A ICM T

1.127. ixsq20n60b2d1.pdf Size:590K _igbt_a

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IXSH 20N60B2D1 VCES = 600 V High Speed IGBT IC25 = 35 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ± 20 V G VGEM Transient ± 30 V C E IC25 TC = 25°C35 A G = Gate C = Collector IC110 TC = 110°C20 A E

1.128. ixsa20n60b2d1.pdf Size:173K _igbt_a

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IXSA 20N60B2D1 VCES = 600 V High Speed IGBT IXSP 20N60B2D1 IC25 = 35 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXSP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ± 20 V G C VGEM Transient ± 30 V E IC25 TC = 25°C35 A IC110 TC = 110°C20 A TO-22

1.129. ixsh20n60u1.pdf Size:82K _igbt_a

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Not for new designs VCES IC25 VCE(sat) Low VCE(sat) IGBT with Diode IXSH 20 N60U1 600 V 40 A 2.5 V High Speed IGBT with Diode IXSH 20 N60AU1 600 V 40 A 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC

1.130. ikb20n60t.pdf Size:697K _igbt_a

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IKB20N60T TRENCHSTOP™ Series p Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: C  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for frequency inverters for washing machines, fans, pumps and vacuum G cleaners E

1.131. ixgx120n60c2.pdf Size:186K _igbt_a

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Preliminary Technical Information VCES = 600V HiPerFASTTM IGBT IXGK120N60C2 Lightspeed 2TM Series IC110 = 120A IXGX120N60C2 ≤ ≤ VCE(sat) ≤ 2.5V ≤ ≤ tfi(typ) = 80ns TO-264(IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G VGES Continuous ± 20 V C (TAB) E VGEM Transient ± 30 V IC25 TC = 25°

1.132. ixgx120n60b.pdf Size:154K _igbt_a

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HiPerFASTTM IGBTs VCES = 600V IXGK120N60B IC90 = 120A IXGX120N60B ≤ VCE(sat) ≤ 2.1V ≤ ≤ ≤ TO-264 (IXGK) G Symbol Test Conditions Maximum Ratings C E VCES TJ = 25°C to 150°C 600 V Tab VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V PLUS247 (IXGX) VGEM Transient ±30 V IC25 TC = 25°C ( Chip Capability ) 200 A IC90 TC = 90°C 120 A ILRMS Termin

1.133. ixgp20n60b.pdf Size:77K _igbt_a

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IXGA 20N60B VCES = 600 V HiPerFASTTM IGBT IXGP 20N60B IC25 = 40 A VCE(sat)typ = 1.7 V tfi = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V G VGEM Transient ±30 V C E IC25 TC = 25°C 40 A IC90 TC = 90°C 20 A TO-263 AA (IXGA) ICM TC = 25°C,

1.134. igp20n60h3.pdf Size:2046K _igbt_a

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IGBT High speed IGBT in Trench and Fieldstop technology IGP20N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IGP20N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features: C TRENCHSTOPTM technology offering • very low turn-off energy • low V CEsat • low EMI • maximum junctio

1.135. kgf20n60pa.pdf Size:1411K _igbt_a

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SEMICONDUCTOR KGF20N60PA TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES ·High speed switching ·High ruggedness, temperature stable behavior ·Short Circuit Withstand Ti

1.136. ixgr120n60b.pdf Size:558K _igbt_a

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HiPerFASTTM IGBT IXGR 120N60B VCES = 600 V IC25 = 156 A ISOPLUS247TM (Electrically Isolated Back Surface) VCE(sat) = 2.1 V Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C E Isolated Backside* IC25 TC = 25°C 156 A IC110 TC = 110°C 102 A IL(R

1.137. ixgx320n60b3.pdf Size:193K _igbt_a

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Preliminary Technical Information GenX3TM 600V VCES = 600V IXGK320N60B3 IC90 = 320A IGBTs IXGX320N60B3 ≤ VCE(sat) ≤ ≤ 1.6V ≤ ≤ Medium-Speed Low-Vsat PT IGBTs for 5-40 kHz Switching TO-264 (IXGK) G Symbol Test Conditions Maximum Ratings C E VCES TJ = 25°C to 150°C 600 V Tab VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V PLUS247 (IXGX) VGEM T

1.138. igw20n60h3.pdf Size:1522K _igbt_a

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IGBT High speed IGBT in Trench and Fieldstop technology IGW20N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGW20N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features: C TRENCHSTOPTM technology offering • very low V CEsat • low EMI • Very soft, fast recovery anti-parallel d

1.139. ikw20n60h3.pdf Size:2118K _igbt_a

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IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW20N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IKW20N60H3 High speed switching series third generation High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode C Features: TRE

1.140. ixsp20n60b2d1.pdf Size:173K _igbt_a

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IXSA 20N60B2D1 VCES = 600 V High Speed IGBT IXSP 20N60B2D1 IC25 = 35 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXSP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ± 20 V G C VGEM Transient ± 30 V E IC25 TC = 25°C35 A IC110 TC = 110°C20 A TO-22

1.141. ixgx320n60a3.pdf Size:199K _igbt_a

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GenX3TM 600V IGBTs VCES = 600V IXGK320N60A3 IC25 = 320A IXGX320N60A3 ≤ VCE(sat) ≤ ≤ 1.25V ≤ ≤ Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V C Tab E E VGES Continuous ±20 V VGEM Transient ±30 V PLUS247TM (IXGX) IC25 TC = 25°C (C

1.142. ikq120n60ta.pdf Size:2188K _igbt_a

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IGBT Low Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode IKQ120N60TA 600V low loss switching series third generation Data sheet Industrial Power Control IKQ120N60TA TRENCHSTOPTM series Low Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled di

1.143. igb20n60h3.pdf Size:733K _igbt_a

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20N60

IGBT High speed IGBT in Trench and Fieldstop technology IGB20N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGB20N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features: C TRENCHSTOPTM technology offering • very low V CEsat • low EMI • maximum junction temperature 175°C G

1.144. ixgx120n60b3.pdf Size:194K _igbt_a

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20N60

VCES = 600V GenX3TM 600V IXGK120N60B3 IC110 = 120A IXGX120N60B3 IGBTs ≤ VCE(sat) ≤ ≤£ 1.8V ≤ ≤ tfi(typ) = 145ns Medium-Speed-Low-Vsat PT IGBTs for 5-40kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 600 V C E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V Tab VGES Continuous ±20 V VGEM Transient ±30 V PLUS247TM (IXG

1.145. ikb20n60h3.pdf Size:1491K _igbt_a

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IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKB20N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IKB20N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology C Features: TRENCHSTOPTM technology offering • very low V CEsat

1.146. hgtg20n60b3.pdf Size:194K _igbt_a

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HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high • 40A, 600V at TC = 25oC voltage switching devices combining the best features of • 600V Switching SOA Capability MOSFETs and bipolar transistors. These devices have the • Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC h

1.147. ikp20n60t.pdf Size:561K _igbt_a

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IKP20N60T TRENCHSTOP™ Series Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C G  Short circuit withstand time 5s E  Designed for : - Frequency Converters - Uninterrupted Power Supply  TRENCHSTOP™ a

1.148. ikw20n60t.pdf Size:573K _igbt_a

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IKW20N60T TRENCHSTOP™ Series Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C G  Short circuit withstand time 5s E  Designed for : - Frequency Converters - Uninterrupted Power Supply  TRENCHSTOP™ a

1.149. ixgt20n60bd1.pdf Size:52K _igbt_a

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IXGH 20N60BD1 HiPerFASTTM IGBT VCES = 600 V IXGT 20N60BD1 with Diode IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V TO-247 AD IC25 TC = 25°C40 A (IXGH) IC90 TC = 90°C20 A

1.150. ixsh20n60b2d1.pdf Size:590K _igbt_a

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IXSH 20N60B2D1 VCES = 600 V High Speed IGBT IC25 = 35 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ± 20 V G VGEM Transient ± 30 V C E IC25 TC = 25°C35 A G = Gate C = Collector IC110 TC = 110°C20 A E

1.151. ixgr120n60c2.pdf Size:169K _igbt_a

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Preliminary Technical Information VCES = 600V HiPerFASTTM IGBT IXGR120N60C2 IC110 = 60A ISOPLUS247TM ≤ VCE(sat) ≤ ≤ 2.7V ≤ ≤ Lightspeed 2TM Series tfi(typ) = 80ns (Electrically Isolated Back Surface) ISOPLUS247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V G (ISOLATED TAB)

1.152. aot20n60.pdf Size:540K _aosemi

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AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.37Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo

1.153. aot20n60l.pdf Size:540K _aosemi

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AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.37Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo

1.154. aok20n60l.pdf Size:445K _aosemi

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AOK20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOK20N60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.37Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

1.155. aotf20n60.pdf Size:540K _aosemi

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AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.37Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo

1.156. aok20n60.pdf Size:445K _aosemi

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AOK20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOK20N60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.37Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

1.157. sdf20n60.pdf Size:154K _solitron

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1.158. ssf20n60h.pdf Size:463K _silikron

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 SSF20N60H Main Product Characteristics: VDSS 600V RDS(on) 0.2ohm(typ.) ID 20A Marking a nd p in TO247 Sche ma ti c di agr a m Assignment Features and Benefits:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF20N60H series MOSFETs is a new technology,w

1.159. brf20n60.pdf Size:1187K _blue-rocket-elect

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20N60

BRF20N60(BRCS20N60FL) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220FL 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220FL Plastic Package. 特征 / Features 超低栅电荷,低反馈电容,开关速度快。 Ultra low gate charge, low effective output capacitance, high switch speed. 用途 / Applications 用于小型化高效率的开关电源的

1.160. cs20n60 a8h.pdf Size:434K _crhj

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Silicon N-Channel Power MOSFET R ○ CS20N60 A8H VDSS 600 V General Description: ID 20 A CS20N60 A8H, the silicon N-channel Enhanced PD(TC=25℃) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.161. cs20n60 anh.pdf Size:437K _crhj

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Silicon N-Channel Power MOSFET R ○ CS20N60 ANH VDSS 600 V General Description: ID 20 A CS20N60 ANH, the silicon N-channel Enhanced PD(TC=25℃) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.162. cs20n60f a9h.pdf Size:431K _crhj

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Silicon N-Channel Power MOSFET R ○ CS20N60F A9H VDSS 600 V General Description: ID 20 A CS20N60F A9H, the silicon N-channel Enhanced PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.163. cm20n60f.pdf Size:130K _jdsemi

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20N60

R CM20N60F 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于计算机开关电源、大功率充电器 等功率开关电路 2.主要特点 开关速度快 1 2 驱动简单,可并联使用 3

1.164. cm20n60.pdf Size:126K _jdsemi

20N60
20N60

R CM20N60 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于计算机开关电源、大功率充电器 等功率开关电路 2.主要特点 开关速度快 驱动简单,可并联使用 3.封装

1.165. cm20n60p to3pb.pdf Size:140K _jdsemi

20N60
20N60

R CM20N60P 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 ◆符合 RoHS

1.166. wfw20n60w.pdf Size:279K _winsemi

20N60
20N60

WFW20N60W WFW20N60W WFW20N60W WFW20N60W Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 20A,600V,R (Max0.39Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 150nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is pro

Datasheet: IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 
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20N60
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