4N60Z Datasheet. Equivalente

 ..1. Size:354K  utc
 4n60z.pdf

UNISONIC TECHNOLOGIES CO., LTD 4N60Z Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching 1 time, low gate charge, low on-state resistance and have a high TO-220F rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

 0.1. Size:291K  1
 ndf04n60z ndd04n60z.pdf

NDF04N60Z, NDD04N60Z Power MOSFET, N-Channel, 600 V, 2.0 W Features Low ON Resistance Low Gate Charge www.onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested VDSS (@ TJmax) RDS(on) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 650 V 2.0 ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) N-Channel Param

 0.2. Size:148K  1
 ndf04n60z ndp04n60z ndd04n60z.pdf

NDF04N60Z, NDP04N60Z, NDD04N60Z N-Channel Power MOSFET 1.8 W, 600 Volts Features http //onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche Tested VDSS RDS(ON) (TYP) @ 2 A These Devices are Pb-Free and are RoHS Compliant 600 V 1.8 Applications Adapter (Notebook, Printer, Gaming) LCD Panel Power Lighting Ballasts 4 ABSOLUTE MAXIMUM RATINGS

 0.3. Size:136K  onsemi
 ndf04n60z ndd04n60z.pdf

NDF04N60Z, NDD04N60Z N-Channel Power MOSFET 600 V, 2.0 W Features Low ON Resistance Low Gate Charge www.onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested VDSS (@ TJmax) RDS(on) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 650 V 2.0 ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) N-Channel Paramete

 0.4. Size:130K  onsemi
 ndf04n60z ndp04n60z ndd04n60z.pdf

NDF04N60Z, NDP04N60Z, NDD04N60Z N-Channel Power MOSFET 600 V, 2.0 W Features http //onsemi.com Low ON Resistance Low Gate Charge ESD Diode-Protected Gate VDSS RDS(on) (MAX) @ 2 A 100% Avalanche Tested 600 V 2.0 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant N-Channel ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) D (

 0.5. Size:327K  inchange semiconductor
 ndd04n60z-1g.pdf

isc N-Channel MOSFET Transistor NDD04N60Z-1G FEATURES Drain Current I = 4.5A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 2.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive