4N60Z Todos los transistores

 

4N60Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 4N60Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm
   Paquete / Cubierta: TO-220F
 

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4N60Z datasheet

 ..1. Size:354K  utc
4n60z.pdf pdf_icon

4N60Z

UNISONIC TECHNOLOGIES CO., LTD 4N60Z Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching 1 time, low gate charge, low on-state resistance and have a high TO-220F rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

 0.1. Size:291K  1
ndf04n60z ndd04n60z.pdf pdf_icon

4N60Z

NDF04N60Z, NDD04N60Z Power MOSFET, N-Channel, 600 V, 2.0 W Features Low ON Resistance Low Gate Charge www.onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested VDSS (@ TJmax) RDS(on) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 650 V 2.0 ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) N-Channel Param

 0.2. Size:148K  1
ndf04n60z ndp04n60z ndd04n60z.pdf pdf_icon

4N60Z

NDF04N60Z, NDP04N60Z, NDD04N60Z N-Channel Power MOSFET 1.8 W, 600 Volts Features http //onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche Tested VDSS RDS(ON) (TYP) @ 2 A These Devices are Pb-Free and are RoHS Compliant 600 V 1.8 Applications Adapter (Notebook, Printer, Gaming) LCD Panel Power Lighting Ballasts 4 ABSOLUTE MAXIMUM RATINGS

 0.3. Size:136K  onsemi
ndf04n60z ndd04n60z.pdf pdf_icon

4N60Z

NDF04N60Z, NDD04N60Z N-Channel Power MOSFET 600 V, 2.0 W Features Low ON Resistance Low Gate Charge www.onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested VDSS (@ TJmax) RDS(on) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 650 V 2.0 ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) N-Channel Paramete

Otros transistores... 2N60L , 2N60 , 2N60K , 3N60 , 3N60A , 3N60Z , 3N60K , 4N60 , IRFB4110 , 4N60K , 8N50H , 9N50 , 10N50 , 11N50 , 12N50 , 13N50 , 14N50 .

 

 

 


 
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