4N60Z - описание и поиск аналогов

 

Аналоги 4N60Z. Основные параметры


   Наименование производителя: 4N60Z
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 36 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 45 ns
   Cossⓘ - Выходная емкость: 70 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.2 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для 4N60Z

   - подбор ⓘ MOSFET транзистора по параметрам

 

4N60Z даташит

 ..1. Size:354K  utc
4n60z.pdfpdf_icon

4N60Z

UNISONIC TECHNOLOGIES CO., LTD 4N60Z Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching 1 time, low gate charge, low on-state resistance and have a high TO-220F rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

 0.1. Size:291K  1
ndf04n60z ndd04n60z.pdfpdf_icon

4N60Z

NDF04N60Z, NDD04N60Z Power MOSFET, N-Channel, 600 V, 2.0 W Features Low ON Resistance Low Gate Charge www.onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested VDSS (@ TJmax) RDS(on) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 650 V 2.0 ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) N-Channel Param

 0.2. Size:148K  1
ndf04n60z ndp04n60z ndd04n60z.pdfpdf_icon

4N60Z

NDF04N60Z, NDP04N60Z, NDD04N60Z N-Channel Power MOSFET 1.8 W, 600 Volts Features http //onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche Tested VDSS RDS(ON) (TYP) @ 2 A These Devices are Pb-Free and are RoHS Compliant 600 V 1.8 Applications Adapter (Notebook, Printer, Gaming) LCD Panel Power Lighting Ballasts 4 ABSOLUTE MAXIMUM RATINGS

 0.3. Size:136K  onsemi
ndf04n60z ndd04n60z.pdfpdf_icon

4N60Z

NDF04N60Z, NDD04N60Z N-Channel Power MOSFET 600 V, 2.0 W Features Low ON Resistance Low Gate Charge www.onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested VDSS (@ TJmax) RDS(on) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 650 V 2.0 ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) N-Channel Paramete

Другие MOSFET... 2N60L , 2N60 , 2N60K , 3N60 , 3N60A , 3N60Z , 3N60K , 4N60 , IRFB4110 , 4N60K , 8N50H , 9N50 , 10N50 , 11N50 , 12N50 , 13N50 , 14N50 .

History: UF830

 

 

 


 
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