11N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET 11A, 500V N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The UTC 11N50 is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state 1resistance. It also can withstand high energy pulse in the avalanche TO-22

PD- 95232IRFS11N50APbF Lead-Free04/29/04Document Number: 91286 www.vishay.com1IRFS11N50APbFDocument Number: 91286 www.vishay.com2IRFS11N50APbFDocument Number: 91286 www.vishay.com3IRFS11N50APbFDocument Number: 91286 www.vishay.com4IRFS11N50APbFDocument Number: 91286 www.vishay.com5IRFS11N50APbFDocument Number: 91286 www.vishay.com6IRFS11N50APb

PD - 94167AHEXFET POWER MOSFET IRFY11N50CMATHRU-HOLE (TO-257AA)500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRFY11N50CMA 500V 0.56 10AFifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeature

PD- 91847AIRFSL11N50AHEXFET Power MOSFET Dynamic dv/dt RatingD Repetitive Avalanche RatedVDSS = 500V Fast Switching Ease of ParalelingRDS(on) = 0.55 Simple Drive RequirementsGID = 11ASDescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device design, low on-resistance

PD- 93797SMPS MOSFETIRFS11N50AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.52 11A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andD 2 PakAvalanche Voltage

PD- 95231IRFSL11N50APbF Lead-Free04/29/04Document Number: 91288 www.vishay.com1IRFSL11N50APbFDocument Number: 91288 www.vishay.com2IRFSL11N50APbFDocument Number: 91288 www.vishay.com3IRFSL11N50APbFDocument Number: 91288 www.vishay.com4IRFSL11N50APbFDocument Number: 91288 www.vishay.com5IRFSL11N50APbFDocument Number: 91288 www.vishay.com6IRFSL11

PD- 94832SMPS MOSFETIRFB11N50APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 500V 0.52 11Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvala

PD- 91847BIRFSL11N50AHEXFET Power MOSFET Dynamic dv/dt RatingD Repetitive Avalanche RatedVDSS = 500V Fast Switching Ease of ParalelingRDS(on) = 0.55 Simple Drive RequirementsGID = 11ASDescriptionThird Generation HEXFET Power MOSFETs from International Rectifierprovide the designer with the best combination of fast switching, ruggedizeddevice design, low

Philips Semiconductors Preliminary specification PowerMOS transistors PHP11N50E, PHB11N50E, PHW11N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 10.4 Ag Low thermal resistanceRDS(ON) 0.6 sGENERAL DESCRIPTI

Philips Semiconductors Product specification PowerMOS transistors PHB11N50E, PHW11N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 10.9 Ag Low thermal resistanceRDS(ON) 0.55 sGENERAL DESCRIPTIONN-channel,

STD11N50M2, STF11N50M2N-channel 500 V, 0.45 typ,8 A, MDmesh II Plus low Qg Power MOSFETs in DPAK and TO-220FP packagesDatasheet - preliminary dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTD11N50M2550 V 0.53 8 ASTF11N50M2TAB Extremely low gate charge31 Lower RDS(on) x area vs previous generation3DPAK2 Low gate input resistance1

STD11N50M2, STF11N50M2DatasheetN-channel 500 V, 0.45 typ., 8 A MDmesh M2 Power MOSFETs in DPAK and TO-220FP packagesFeaturesVDS @ TJmax RDS(on)max. IDOrder code PackageTABSTD11N50M2 DPAK3550 V 0.53 8 A2STF11N50M2 TO-220FP1321 Extremely low gate chargeDPAK TO-220FP Excellent output capacitance (COSS) profile 100% avalanche tested Zen

July 2005TMFRFETFQP11N50CF/FQPF11N50CF500V N-Channel MOSFETFeatures Description 11A, 500V, RDS(on) = 0.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge (typical 43 nC)DMOS technology. Low Crss (typical 20pF)This advanced technology has been especially tai

IRFSL11N50A, SiHFSL11N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.55 Fast SwitchingQg (Max.) (nC) 51 Ease of ParallelingQgs (nC) 12 Simple Drive RequirementsQgd (nC) 23 Compliant to RoHS Directive 2002/95/ECConfiguration SingleDESCRIPTIOND I2PAK

IRFSL11N50A, SiHFSL11N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.55 Fast SwitchingQg (Max.) (nC) 51 Ease of ParallelingQgs (nC) 12 Simple Drive RequirementsQgd (nC) 23 Compliant to RoHS Directive 2002/95/ECConfiguration SingleDESCRIPTIOND I2PAK

IRFB11N50A, SiHFB11N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.52 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 52COMPLIANTRuggednessQgs (nC) 13 Fully Characterized Capacitance andQgd (nC) 18Avalanche Voltage and currentConfi

IRFB11N50A, SiHFB11N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.52 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 52COMPLIANTRuggednessQgs (nC) 13 Fully Characterized Capacitance andQgd (nC) 18Avalanche Voltage and currentConfi

IRFS11N50A, SiHFS11N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 0.52 Low Gate Charge Qg results in Simple DriveQg (Max.) (nC) 52RequirementQgs (nC) 13 Improved Gate, Avalanche and Dynamic dV/dtQgd (nC) 18 Ruggedness Fully Characterized Capacitance and Avalanc

PD- 94832SMPS MOSFETIRFB11N50APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 500V 0.52 11Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvala

NDF11N50ZN-Channel Power MOSFET500 V, 0.52 WFeatures Low ON Resistance Low Gate Chargewww.onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS RDS(ON) (MAX) @ 4.5 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS500 VCompliant 0.52 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelRating Symbol NDF UnitD (

KF11N50P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF11N50PAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for electronic ballast andE DIM MILLIMETERSG_+switching mode power supplies. A

AP11N50I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.68 Fast Switching Characteristic ID 11AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designerwith the best combination of fast switching, ruggedize

AP11N50IRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.62 Fast Switching Characteristic ID 11AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design, lowGon-resistan

JFPC11N50C JFFM11N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 11A, 500V, RDS(on)typ. = 0.46@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

500V/11A POWER MOSFET (N-Channel) MSU11N50Q 500V/11A Power MOSFET (N-Channel) General Description MSU11N50Q is a N-Channel enhancement mode power MOSFET with advanced technology. It is designed to have Better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high TO-262 energy pulse in the avalanche and commu

TMP11N50SG/TMPF11N50SGVDSS = 550 V @TjmaxFeaturesID = 10A Low gate chargeRDS(ON) = 0.7 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkTMP11N50SG / TMPF11N50SG TO-220 / TO-220F TMP11N50SG / TMPF11N50SG Halogen Fre

TMP11N50/TMPF11N50TMP11N50G/TMPF11N50GVDSS = 550 V @TjmaxFeaturesID = 11A Low gate chargeRDS(ON) = 0.67 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkTMP11N50 / TMPF11N50 TO-220 / TO-220F TMP11N50 / TMPF11N50

iscN-Channel MOSFET Transistor IRFS11N50AFEATURESLow drain-source on-resistance:RDS(ON) =0.52 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL