All MOSFET. 11N50 Datasheet

 

11N50 Datasheet and Replacement


   Type Designator: 11N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 195 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: TO-220 TO-220F TO-220F1 TO-220F2 TO-262
 
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11N50 Datasheet (PDF)

 ..1. Size:177K  utc
11n50.pdf pdf_icon

11N50

UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET 11A, 500V N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The UTC 11N50 is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state 1resistance. It also can withstand high energy pulse in the avalanche TO-22

 0.1. Size:855K  international rectifier
irfs11n50apbf.pdf pdf_icon

11N50

PD- 95232IRFS11N50APbF Lead-Free04/29/04Document Number: 91286 www.vishay.com1IRFS11N50APbFDocument Number: 91286 www.vishay.com2IRFS11N50APbFDocument Number: 91286 www.vishay.com3IRFS11N50APbFDocument Number: 91286 www.vishay.com4IRFS11N50APbFDocument Number: 91286 www.vishay.com5IRFS11N50APbFDocument Number: 91286 www.vishay.com6IRFS11N50APb

 0.2. Size:104K  international rectifier
irfy11n50cma.pdf pdf_icon

11N50

PD - 94167AHEXFET POWER MOSFET IRFY11N50CMATHRU-HOLE (TO-257AA)500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRFY11N50CMA 500V 0.56 10AFifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeature

 0.3. Size:107K  international rectifier
irfsl11n50a.pdf pdf_icon

11N50

PD- 91847AIRFSL11N50AHEXFET Power MOSFET Dynamic dv/dt RatingD Repetitive Avalanche RatedVDSS = 500V Fast Switching Ease of ParalelingRDS(on) = 0.55 Simple Drive RequirementsGID = 11ASDescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device design, low on-resistance

Datasheet: 3N60Z , 3N60K , 4N60 , 4N60Z , 4N60K , 8N50H , 9N50 , 10N50 , P55NF06 , 12N50 , 13N50 , 14N50 , 15N50 , 16N50 , 18N50 , 24N50 , 26N50 .

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