All MOSFET. 11N50 Datasheet

 

11N50 MOSFET. Datasheet pdf. Equivalent

Type Designator: 11N50

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 195 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 11 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 70 nS

Drain-Source Capacitance (Cd): 185 pF

Maximum Drain-Source On-State Resistance (Rds): 0.48 Ohm

Package: TO-220_TO-220F_TO-220F1_TO-220F2_TO-262

11N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

11N50 Datasheet (PDF)

1.1. irfy11n50cma.pdf Size:104K _update

11N50
11N50

PD - 94167A HEXFET® POWER MOSFET IRFY11N50CMA THRU-HOLE (TO-257AA) 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFY11N50CMA 500V 0.56Ω 10A Fifth Generation HEXFET® power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Feature

1.2. tmp11n50sg tmpf11n50sg.pdf Size:340K _update

11N50
11N50

TMP11N50SG/TMPF11N50SG VDSS = 550 V @Tjmax Features ID = 10A  Low gate charge RDS(ON) = 0.7 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery D G S Device Package Marking Remark TMP11N50SG / TMPF11N50SG TO-220 / TO-220F TMP11N50SG / TMPF11N50SG Halogen Fre

 1.3. stf11n50m2.pdf Size:986K _update

11N50
11N50

STD11N50M2, STF11N50M2 N-channel 500 V, 0.45 Ω typ,8 A, MDmesh II Plus™ low Qg Power MOSFETs in DPAK and TO-220FP packages Datasheet - preliminary data Features Order codes VDS @ TJmax RDS(on) max ID STD11N50M2 550 V 0.53 Ω 8 A STF11N50M2 TAB • Extremely low gate charge 3 1 • Lower RDS(on) x area vs previous generation 3 DPAK 2 • Low gate input resistance 1 •

1.4. tmp11n50 tmpf11n50.pdf Size:353K _update

11N50
11N50

TMP11N50/TMPF11N50 TMP11N50G/TMPF11N50G VDSS = 550 V @Tjmax Features ID = 11A  Low gate charge RDS(ON) = 0.67 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery D G S Device Package Marking Remark TMP11N50 / TMPF11N50 TO-220 / TO-220F TMP11N50 / TMPF11N50

 1.5. std11n50m2 stf11n50m2.pdf Size:986K _upd

11N50
11N50

STD11N50M2, STF11N50M2 N-channel 500 V, 0.45 Ω typ,8 A, MDmesh II Plus™ low Qg Power MOSFETs in DPAK and TO-220FP packages Datasheet - preliminary data Features Order codes VDS @ TJmax RDS(on) max ID STD11N50M2 550 V 0.53 Ω 8 A STF11N50M2 TAB • Extremely low gate charge 3 1 • Lower RDS(on) x area vs previous generation 3 DPAK 2 • Low gate input resistance 1 •

1.6. irfsl11n50apbf.pdf Size:307K _upd

11N50
11N50

IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 • Repetitive Avalanche Rated RDS(on) ()VGS = 10 V 0.55 • Fast Switching Qg (Max.) (nC) 51 • Ease of Paralleling Qgs (nC) 12 • Simple Drive Requirements Qgd (nC) 23 • Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION D I2PAK

1.7. irfs11n50apbf.pdf Size:341K _upd

11N50
11N50

IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ()VGS = 10 V 0.52 • Low Gate Charge Qg results in Simple Drive Qg (Max.) (nC) 52 Requirement Qgs (nC) 13 • Improved Gate, Avalanche and Dynamic dV/dt Qgd (nC) 18 Ruggedness • Fully Characterized Capacitance and Avalanc

1.8. irfb11n50apbf.pdf Size:163K _upd-mosfet

11N50
11N50

IRFB11N50A, SiHFB11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (Ω)VGS = 10 V 0.52 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 52 COMPLIANT Ruggedness Qgs (nC) 13 • Fully Characterized Capacitance and Qgd (nC) 18 Avalanche Voltage and current Confi

1.9. sihfs11n50a.pdf Size:341K _upd-mosfet

11N50
11N50

IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ()VGS = 10 V 0.52 • Low Gate Charge Qg results in Simple Drive Qg (Max.) (nC) 52 Requirement Qgs (nC) 13 • Improved Gate, Avalanche and Dynamic dV/dt Qgd (nC) 18 Ruggedness • Fully Characterized Capacitance and Avalanc

1.10. msu11n50q.pdf Size:398K _upd-mosfet

11N50
11N50

500V/11A POWER MOSFET (N-Channel) MSU11N50Q 500V/11A Power MOSFET (N-Channel) General Description  MSU11N50Q is a N-Channel enhancement mode power MOSFET with advanced technology. It is designed to have Better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high TO-262 energy pulse in the avalanche and commu

1.11. sihfsl11n50a.pdf Size:307K _upd-mosfet

11N50
11N50

IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 • Repetitive Avalanche Rated RDS(on) ()VGS = 10 V 0.55 • Fast Switching Qg (Max.) (nC) 51 • Ease of Paralleling Qgs (nC) 12 • Simple Drive Requirements Qgd (nC) 23 • Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION D I2PAK

1.12. php11n50e phb11n50e phw11n50e.pdf Size:35K _philips2

11N50
11N50

Philips Semiconductors Preliminary specification PowerMOS transistors PHP11N50E, PHB11N50E, PHW11N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 500 V • Stable off-state characteristics • High thermal cycling performance ID = 10.4 A g • Low thermal resistance RDS(ON) ≤ 0.6 Ω s GENERAL DESCRIPTI

1.13. phb11n50e phw11n50e 1.pdf Size:102K _philips2

11N50
11N50

Philips Semiconductors Product specification PowerMOS transistors PHB11N50E, PHW11N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 10.9 A g Low thermal resistance RDS(ON) ? 0.55 ? s GENERAL DESCRIPTION N-channel, enhancement mode

1.14. fqp11n50cf fqpf11n50cf.pdf Size:1291K _fairchild_semi

11N50
11N50

July 2005 TM FRFET FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features Description 11A, 500V, RDS(on) = 0.55? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge (typical 43 nC) DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially tailored to mini

1.15. fqp11n50cf.pdf Size:1291K _fairchild_semi

11N50
11N50

July 2005 TM FRFET FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features Description • 11A, 500V, RDS(on) = 0.55Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low Gate Charge (typical 43 nC) DMOS technology. • Low Crss (typical 20pF) This advanced technology has been especially tai

1.16. irfsl11n50.pdf Size:111K _international_rectifier

11N50
11N50

PD- 91847B IRFSL11N50A HEXFET Power MOSFET Dynamic dv/dt Rating D Repetitive Avalanche Rated VDSS = 500V Fast Switching Ease of Paraleling RDS(on) = 0.55? Simple Drive Requirements G ID = 11A S Description Third Generation HEXFET Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resi

1.17. irfb11n50a.pdf Size:202K _international_rectifier

11N50
11N50

PD- 94832 SMPS MOSFET IRFB11N50APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.52? 11A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche V

1.18. irfy11n50cma.pdf Size:105K _international_rectifier

11N50
11N50

PD - 94167A HEXFET POWER MOSFET IRFY11N50CMA THRU-HOLE (TO-257AA) 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFY11N50CMA 500V 0.56? 10A Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fas

1.19. irfsl11n50apbf.pdf Size:827K _international_rectifier

11N50
11N50

PD- 95231 IRFSL11N50APbF Lead-Free 04/29/04 Document Number: 91288 www.vishay.com 1 IRFSL11N50APbF Document Number: 91288 www.vishay.com 2 IRFSL11N50APbF Document Number: 91288 www.vishay.com 3 IRFSL11N50APbF Document Number: 91288 www.vishay.com 4 IRFSL11N50APbF Document Number: 91288 www.vishay.com 5 IRFSL11N50APbF Document Number: 91288 www.vishay.com 6 IRFSL11N50AP

1.20. irfs11n50a.pdf Size:118K _international_rectifier

11N50
11N50

PD- 93797 SMPS MOSFET IRFS11N50A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.52? 11A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D 2 Pak Avalanche Voltage and Cu

1.21. irfsl11n50a.pdf Size:107K _international_rectifier

11N50
11N50

PD- 91847A IRFSL11N50A HEXFET Power MOSFET Dynamic dv/dt Rating D Repetitive Avalanche Rated VDSS = 500V Fast Switching Ease of Paraleling RDS(on) = 0.55? Simple Drive Requirements G ID = 11A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and co

1.22. irfs11n50apbf.pdf Size:855K _international_rectifier

11N50
11N50

PD- 95232 IRFS11N50APbF Lead-Free 04/29/04 Document Number: 91286 www.vishay.com 1 IRFS11N50APbF Document Number: 91286 www.vishay.com 2 IRFS11N50APbF Document Number: 91286 www.vishay.com 3 IRFS11N50APbF Document Number: 91286 www.vishay.com 4 IRFS11N50APbF Document Number: 91286 www.vishay.com 5 IRFS11N50APbF Document Number: 91286 www.vishay.com 6 IRFS11N50APbF Do

1.23. irfb11n50a sihfb11n50a.pdf Size:137K _vishay

11N50
11N50

IRFB11N50A, SiHFB11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (?)VGS = 10 V 0.52 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 52 COMPLIANT Ruggedness Qgs (nC) 13 Fully Characterized Capacitance and Qgd (nC) 18 Avalanche Voltage and current Configuration S

1.24. irfsl11n50a sihfsl11n50a.pdf Size:305K _vishay

11N50
11N50

IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.55 Fast Switching Qg (Max.) (nC) 51 Ease of Paralleling Qgs (nC) 12 Simple Drive Requirements Qgd (nC) 23 Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION D I2PAK (TO-262) Third

1.25. 11n50.pdf Size:177K _utc

11N50
11N50

UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET 11A, 500V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 11N50 is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state 1 resistance. It also can withstand high energy pulse in the avalanche TO-220F

1.26. kf11n50p-f.pdf Size:415K _kec

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11N50

KF11N50P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF11N50P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ + switching mode power supplies. A

1.27. ap11n50i.pdf Size:93K _a-power

11N50
11N50

AP11N50I RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low On-resistance BVDSS 500V Ў Simple Drive Requirement RDS(ON) 0.62? Ў Fast Switching Characteristic ID 11A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low G on-resistance and

1.28. ap11n50i-hf.pdf Size:91K _a-power

11N50
11N50

AP11N50I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Low On-resistance BVDSS 500V ▼ Simple Drive Requirement RDS(ON) 0.68Ω ▼ Fast Switching Characteristic ID 11A G ▼ RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedize

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 
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