11N50 MOSFET. Datasheet pdf. Equivalent

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11N50 Datasheet (PDF)

1.1. irfy11n50cma.pdf Size:104K _update

PD - 94167A HEXFET® POWER MOSFET IRFY11N50CMA THRU-HOLE (TO-257AA) 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFY11N50CMA 500V 0.56Ω 10A Fifth Generation HEXFET® power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Feature

1.2. tmp11n50sg tmpf11n50sg.pdf Size:340K _update

TMP11N50SG/TMPF11N50SG VDSS = 550 V @Tjmax Features ID = 10A  Low gate charge RDS(ON) = 0.7 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery D G S Device Package Marking Remark TMP11N50SG / TMPF11N50SG TO-220 / TO-220F TMP11N50SG / TMPF11N50SG Halogen Fre

 1.3. stf11n50m2.pdf Size:986K _update

STD11N50M2, STF11N50M2 N-channel 500 V, 0.45 Ω typ,8 A, MDmesh II Plus™ low Qg Power MOSFETs in DPAK and TO-220FP packages Datasheet - preliminary data Features Order codes VDS @ TJmax RDS(on) max ID STD11N50M2 550 V 0.53 Ω 8 A STF11N50M2 TAB • Extremely low gate charge 3 1 • Lower RDS(on) x area vs previous generation 3 DPAK 2 • Low gate input resistance 1 •

1.4. tmp11n50 tmpf11n50.pdf Size:353K _update

TMP11N50/TMPF11N50 TMP11N50G/TMPF11N50G VDSS = 550 V @Tjmax Features ID = 11A  Low gate charge RDS(ON) = 0.67 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery D G S Device Package Marking Remark TMP11N50 / TMPF11N50 TO-220 / TO-220F TMP11N50 / TMPF11N50

 1.5. std11n50m2 stf11n50m2.pdf Size:986K _upd

STD11N50M2, STF11N50M2 N-channel 500 V, 0.45 Ω typ,8 A, MDmesh II Plus™ low Qg Power MOSFETs in DPAK and TO-220FP packages Datasheet - preliminary data Features Order codes VDS @ TJmax RDS(on) max ID STD11N50M2 550 V 0.53 Ω 8 A STF11N50M2 TAB • Extremely low gate charge 3 1 • Lower RDS(on) x area vs previous generation 3 DPAK 2 • Low gate input resistance 1 •

1.6. irfsl11n50apbf.pdf Size:307K _upd

IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 • Repetitive Avalanche Rated RDS(on) ()VGS = 10 V 0.55 • Fast Switching Qg (Max.) (nC) 51 • Ease of Paralleling Qgs (nC) 12 • Simple Drive Requirements Qgd (nC) 23 • Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION D I2PAK

1.7. irfs11n50apbf.pdf Size:341K _upd

IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ()VGS = 10 V 0.52 • Low Gate Charge Qg results in Simple Drive Qg (Max.) (nC) 52 Requirement Qgs (nC) 13 • Improved Gate, Avalanche and Dynamic dV/dt Qgd (nC) 18 Ruggedness • Fully Characterized Capacitance and Avalanc

1.8. irfb11n50apbf.pdf Size:163K _upd-mosfet

IRFB11N50A, SiHFB11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (Ω)VGS = 10 V 0.52 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 52 COMPLIANT Ruggedness Qgs (nC) 13 • Fully Characterized Capacitance and Qgd (nC) 18 Avalanche Voltage and current Confi

1.9. sihfs11n50a.pdf Size:341K _upd-mosfet

IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ()VGS = 10 V 0.52 • Low Gate Charge Qg results in Simple Drive Qg (Max.) (nC) 52 Requirement Qgs (nC) 13 • Improved Gate, Avalanche and Dynamic dV/dt Qgd (nC) 18 Ruggedness • Fully Characterized Capacitance and Avalanc

1.10. msu11n50q.pdf Size:398K _upd-mosfet

500V/11A POWER MOSFET (N-Channel) MSU11N50Q 500V/11A Power MOSFET (N-Channel) General Description  MSU11N50Q is a N-Channel enhancement mode power MOSFET with advanced technology. It is designed to have Better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high TO-262 energy pulse in the avalanche and commu

1.11. sihfsl11n50a.pdf Size:307K _upd-mosfet

IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 • Repetitive Avalanche Rated RDS(on) ()VGS = 10 V 0.55 • Fast Switching Qg (Max.) (nC) 51 • Ease of Paralleling Qgs (nC) 12 • Simple Drive Requirements Qgd (nC) 23 • Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION D I2PAK

1.12. php11n50e phb11n50e phw11n50e.pdf Size:35K _philips2

Philips Semiconductors Preliminary specification PowerMOS transistors PHP11N50E, PHB11N50E, PHW11N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 500 V • Stable off-state characteristics • High thermal cycling performance ID = 10.4 A g • Low thermal resistance RDS(ON) ≤ 0.6 Ω s GENERAL DESCRIPTI

1.13. phb11n50e phw11n50e 1.pdf Size:102K _philips2

Philips Semiconductors Product specification PowerMOS transistors PHB11N50E, PHW11N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d � Repetitive Avalanche Rated � Fast switching VDSS = 500 V � Stable off-state characteristics � High thermal cycling performance ID = 10.9 A g � Low thermal resistance RDS(ON) ? 0.55 ? s GENERAL DESCRIPTION N-channel, enhancement mode

1.14. fqp11n50cf fqpf11n50cf.pdf Size:1291K _fairchild_semi

July 2005 TM FRFET FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features Description � 11A, 500V, RDS(on) = 0.55? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild�s proprietary, planar stripe, � Low Gate Charge (typical 43 nC) DMOS technology. � Low Crss (typical 20pF) This advanced technology has been especially tailored to mini

1.15. fqp11n50cf.pdf Size:1291K _fairchild_semi

July 2005 TM FRFET FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features Description • 11A, 500V, RDS(on) = 0.55Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low Gate Charge (typical 43 nC) DMOS technology. • Low Crss (typical 20pF) This advanced technology has been especially tai

1.16. irfsl11n50.pdf Size:111K _international_rectifier

PD- 91847B IRFSL11N50A HEXFET� Power MOSFET Dynamic dv/dt Rating D Repetitive Avalanche Rated VDSS = 500V Fast Switching Ease of Paraleling RDS(on) = 0.55? Simple Drive Requirements G ID = 11A S Description Third Generation HEXFET� Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resi

1.17. irfb11n50a.pdf Size:202K _international_rectifier

PD- 94832 SMPS MOSFET IRFB11N50APbF HEXFET� Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.52? 11A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche V

1.18. irfy11n50cma.pdf Size:105K _international_rectifier

PD - 94167A HEXFET� POWER MOSFET IRFY11N50CMA THRU-HOLE (TO-257AA) 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFY11N50CMA 500V 0.56? 10A Fifth Generation HEXFET� power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fas

1.19. irfsl11n50apbf.pdf Size:827K _international_rectifier

PD- 95231 IRFSL11N50APbF � Lead-Free 04/29/04 Document Number: 91288 www.vishay.com 1 IRFSL11N50APbF Document Number: 91288 www.vishay.com 2 IRFSL11N50APbF Document Number: 91288 www.vishay.com 3 IRFSL11N50APbF Document Number: 91288 www.vishay.com 4 IRFSL11N50APbF Document Number: 91288 www.vishay.com 5 IRFSL11N50APbF Document Number: 91288 www.vishay.com 6 IRFSL11N50AP

1.20. irfs11n50a.pdf Size:118K _international_rectifier

PD- 93797 SMPS MOSFET IRFS11N50A HEXFET� Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.52? 11A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D 2 Pak Avalanche Voltage and Cu

1.21. irfsl11n50a.pdf Size:107K _international_rectifier

PD- 91847A IRFSL11N50A HEXFET� Power MOSFET Dynamic dv/dt Rating D Repetitive Avalanche Rated VDSS = 500V Fast Switching Ease of Paraleling RDS(on) = 0.55? Simple Drive Requirements G ID = 11A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and co

1.22. irfs11n50apbf.pdf Size:855K _international_rectifier

PD- 95232 IRFS11N50APbF � Lead-Free 04/29/04 Document Number: 91286 www.vishay.com 1 IRFS11N50APbF Document Number: 91286 www.vishay.com 2 IRFS11N50APbF Document Number: 91286 www.vishay.com 3 IRFS11N50APbF Document Number: 91286 www.vishay.com 4 IRFS11N50APbF Document Number: 91286 www.vishay.com 5 IRFS11N50APbF Document Number: 91286 www.vishay.com 6 IRFS11N50APbF Do

1.23. irfb11n50a sihfb11n50a.pdf Size:137K _vishay

IRFB11N50A, SiHFB11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (?)VGS = 10 V 0.52 � Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 52 COMPLIANT Ruggedness Qgs (nC) 13 � Fully Characterized Capacitance and Qgd (nC) 18 Avalanche Voltage and current Configuration S

1.24. irfsl11n50a sihfsl11n50a.pdf Size:305K _vishay

IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Dynamic dV/dt Rating VDS (V) 500 � Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.55 � Fast Switching Qg (Max.) (nC) 51 � Ease of Paralleling Qgs (nC) 12 � Simple Drive Requirements Qgd (nC) 23 � Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION D I2PAK (TO-262) Third

1.25. 11n50.pdf Size:177K _utc

UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET 11A, 500V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 11N50 is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state 1 resistance. It also can withstand high energy pulse in the avalanche TO-220F

1.26. kf11n50p-f.pdf Size:415K _kec

KF11N50P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF11N50P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ + switching mode power supplies. A

1.27. ap11n50i.pdf Size:93K _a-power

AP11N50I RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low On-resistance BVDSS 500V Ў Simple Drive Requirement RDS(ON) 0.62? Ў Fast Switching Characteristic ID 11A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low G on-resistance and

1.28. ap11n50i-hf.pdf Size:91K _a-power

AP11N50I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Low On-resistance BVDSS 500V ▼ Simple Drive Requirement RDS(ON) 0.68Ω ▼ Fast Switching Characteristic ID 11A G ▼ RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedize

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