UF460 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UF460
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 190 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 21 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 120 nS
Cossⓘ - Capacitancia de salida: 1000 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.21 Ohm
Paquete / Cubierta: TO-3P TO-247
Búsqueda de reemplazo de MOSFET UF460
UF460 Datasheet (PDF)
uf460.pdf
UNISONIC TECHNOLOGIES CO., LTD UF460 Power MOSFET 21 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UF460 uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, motor controls, inverters, choppers, audio amplifiers and high energy pulse cir
buf460.pdf
BUF460AV NPN TRANSISTOR POWER MODULE EASY TO DRIVE TECHNOLOGY (ETD) HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS MOTOR CONTROL SMPS & UPS ISOTOP WELDING EQUIPMENT INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Paramete
buf460av.pdf
BUF460AV NPN TRANSISTOR POWER MODULE EASY TO DRIVE TECHNOLOGY (ETD) HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R JUNCTION CASE th SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS MOTOR CONTROL SMPS & UPS ISOTOP WELDING EQUIPMENT INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM
uf460l-t3p-t uf460g-t3p-t uf460l-t47-t uf460g-t47-t.pdf
UNISONIC TECHNOLOGIES CO., LTD UF460 Power MOSFET 21A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UF460 uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
Otros transistores... 18N50 , 24N50 , 26N50 , UF830 , UF830Z , UF840 , UK3568 , UF450 , 2N7002 , 1N50 , 1N50Z , 2N50 , 3N50 , 3N50Z , 4N50 , 5N50 , 5N50K .
History: IXFH16N60P3
History: IXFH16N60P3
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