UF460 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: UF460 📄📄

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 190 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 21 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 120 nS

Cossⓘ - Capacitancia de salida: 1000 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.21 Ohm

Encapsulados: TO-3P TO-247

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UF460 datasheet

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UNISONIC TECHNOLOGIES CO., LTD UF460 Power MOSFET 21 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UF460 uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, motor controls, inverters, choppers, audio amplifiers and high energy pulse cir

0.1. Size:103K st
buf460.pdf pdf_icon

BUF460AV NPN TRANSISTOR POWER MODULE EASY TO DRIVE TECHNOLOGY (ETD) HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS MOTOR CONTROL SMPS & UPS ISOTOP WELDING EQUIPMENT INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Paramete

0.2. Size:368K st
buf460av.pdf pdf_icon

BUF460AV NPN TRANSISTOR POWER MODULE EASY TO DRIVE TECHNOLOGY (ETD) HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R JUNCTION CASE th SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS MOTOR CONTROL SMPS & UPS ISOTOP WELDING EQUIPMENT INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM

0.3. Size:214K utc
uf460l-t3p-t uf460g-t3p-t uf460l-t47-t uf460g-t47-t.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD UF460 Power MOSFET 21A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UF460 uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Otros transistores... 18N50, 24N50, 26N50, UF830, UF830Z, UF840, UK3568, UF450, IRF9540N, 1N50, 1N50Z, 2N50, 3N50, 3N50Z, 4N50, 5N50, 5N50K

UF460 Datasheet. Equivalente