8N50 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 8N50
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 38 nS
Cossⓘ - Capacitancia de salida: 115 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.77 Ohm
Encapsulados: TO-220 TO-220F1 TO-220F2
Búsqueda de reemplazo de 8N50 MOSFET
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8N50 datasheet
8n50.pdf
UNISONIC TECHNOLOGIES CO., LTD 8N50 Preliminary Power MOSFET 8A, 500V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 8N50 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state 1 resistance and superior switching performance. It also can withstand TO-220
8n50.pdf
8N50 8A 500V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 500V planar technology which reduce the conduction loss, improve switching I = 8.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) =0.72 2 Features Fast switching ESD improv
gpt18n50g gpt18n50dg.pdf
GPT18N50 / GPT18N50D POWER FIELD EFFECT TRANSISTOR Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 2013/6/26 Rev1.6 Greatpower Microelectronic Corp. Page 4 GPT18N50 / GPT18N50D POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-220F 2013/6/26 Rev1.6 Greatpower Microelectronic Corp. Page 5 GPT18N50 / GPT18N50D
fqp18n50v2 fqpf18n50v2.pdf
QFET FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET Features Description 550V @TJ = 150 C These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Typ. RDS(on) = 0.265 @VGS = 10 V DMOS technology. Low gate charge (typical 42 nC) This advanced technology has been especially tailored to mini- Lo
mtu18n50erev1.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTU18N50E/D Designer's Data Sheet MTU18N50E TMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 18 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degrading performance over time
mtp8n50erev2x.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP8N50E/D Designer's Data Sheet MTP8N50E TMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 8.0 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degrading performance over time.
mtu18n50e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTU18N50E/D Designer's Data Sheet MTU18N50E TMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 18 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degrading performance over time
mtb8n50erev1x.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB8N50E/D Designer's Data Sheet MTB8N50E TMOS E-FET. High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 8.0 AMPERES 500 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.8 OHM than any existing surface mount package which allows it
mtb8n50e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB8N50E/D Designer's Data Sheet MTB8N50E TMOS E-FET. High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 8.0 AMPERES 500 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.8 OHM than any existing surface mount package which allows it
mtp8n50e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP8N50E/D Designer's Data Sheet MTP8N50E TMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 8.0 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degrading performance over time.
irfb18n50k.pdf
PD - 93926B IRFB18N50K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.26 17A High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized
irfbl18n50k.pdf
PD- 93928 PROVISIONAL IRFBL18N50K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) ID Telecom and Data-Com off-Line SMPS UninterruptIble Power Supply 500V 0.25 18A Benefits Low On-Resistance High Speed Switching Low Gate Drive Current Due to Improved Gate Charge Characteristics Improved Avalanche Ruggedness and Dynamic dv/dt, Fully Characterized Avalanche Vo
irfib8n50k.pdf
PD - 94444 SMPS MOSFET IRFIB8N50K HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply 500V 290m 6.7A l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and TO-220 FULL-PAK Av
irfb18n50kpbf.pdf
SMPS MOSFET PD - 95472A IRFB18N50KPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply (SMPS) VDSS RDS(on) typ. ID l Uninterruptible Power Supply 500V 0.26 17A l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
php8n50e phb8n50e phw8n50e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP8N50E, PHB8N50E, PHW8N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 8.5 A g Low thermal resistance RDS(ON) 0.85 s GENERAL DESCRIPTION N-c
phx8n50e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHX8N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 4.2 A g Isolated package RDS(ON) 0.85 s GENERAL DESCRIPTION PINNING SOT186A N-channel, en
fdp8n50nz fdpf8n50nzt.pdf
October 2009 UniFETTM FDP8N50NZ / FDPF8N50NZT N-Channel MOSFET 500V, 8A, 0.85 Features Description RDS(on) = 0.77 ( Typ.) @ VGS = 10V, ID = 4A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC) technology. Low Crss ( Typ. 5pF) This advance technology has been
fqa28n50.pdf
August 2014 FQA28N50 N-Channel QFET MOSFET 500 V, 28.4 A, 160 m Features Description 28.4 A, 500 V, RDS(on) = 160 m (Max.) @ VGS = 10 V, ID = These N-Channel enhancement mode power field effect 14.2 A transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Gate Charge (Typ. 110 nC) This advanced technology has been especially tailored
fdp8n50nz fdpf8n50nz fdpf8n50nzt.pdf
March 2010 UniFETTM FDP8N50NZ / FDPF8N50NZ tm N-Channel MOSFET 500V, 8A, 0.85 Features Description RDS(on) = 0.77 ( Typ.) @ VGS = 10V, ID = 4A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC) technology. Low Crss ( Typ. 5pF) This advance technology has been es
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November 2013 FDP18N50 / FDPF18N50 / FDPF18N50T N-Channel UniFETTM MOSFET 500 V, 18 A, 265 m Features Description RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 9 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 45 nC) This MOSFET is tailored to reduce on-state resistance, and to Low
fdp8n50nzu fdpf8n50nzu.pdf
February 2010 UniFET-IITM FDP8N50NZU / FDPF8N50NZU tm N-Channel MOSFET 500V, 6.5A, 1.2 Features Description RDS(on) = 1.0 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC) technology. Low Crss ( Typ. 5pF) This advance t echnology
fqa28n50f.pdf
September 2001 TM FRFET FQA28N50F 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 28.4A, 500V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 110 nC) planar stripe, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially
fdp18n50 fdpf18n50.pdf
April 2007 TM UniFET FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description 18A, 500V, RDS(on) = 0.265 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 45 nC) stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially
fdd8n50nz.pdf
August 2010 UniFET-IITM FDD8N50NZ N-Channel MOSFET 500V, 6.5A, 0.85 Features Description RDS(on) = 0.77 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC) technology. Low Crss ( Typ. 5pF) This advance technology has been especiall
fqh18n50v2.pdf
QFET FQH18N50V2 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 20A, 500V, RDS(on) = 0.265 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to F
fda18n50.pdf
October 2006 TM UniFET FDA18N50 500V N-Channel MOSFET Features Description 19A, 500V, RDS(on) = 0.265 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 45 nC) stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to
fdp8n50nzf fdpf8n50nzf.pdf
February 2010 UniFET-IITM FDP8N50NZF / FDPF8N50NZF tm N-Channel MOSFET 500V, 7A, 1 Features Description RDS(on) = 0.85 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC) technology. Low Crss ( Typ. 5pF) This advance technology has
fqpf18n50v2.pdf
TM QFET FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 18A, 500V, RDS(on) = 0.265 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailor
fda28n50.pdf
August 2008 UniFETTM FDA28N50 N-Channel MOSFET 500V, 28A, 0.155 Features Description RDS(on) = 0.122 ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Failchild s proprietary, planar Low gate charge ( Typ. 80nC) stripe, DMOS technology. Low Crss ( Typ. 42pF) This advance technology has been especially
fdp8n50nzu.pdf
February 2010 UniFET-IITM FDP8N50NZU / FDPF8N50NZU tm N-Channel MOSFET 500V, 6.5A, 1.2 Features Description RDS(on) = 1.0 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC) technology. Low Crss ( Typ. 5pF) This advance t echnology
fqa18n50v2.pdf
TM QFET FQA18N50V2 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 20A, 500V, RDS(on) = 0.265 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to F
fqa28n50 f109.pdf
April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 28.4A, 500V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 110 nC) planar stripe, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has be
fqp18n50v2.pdf
TM QFET FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 18A, 500V, RDS(on) = 0.265 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailor
fda28n50f.pdf
November 2008 UniFETTM FDA28N50F N-Channel MOSFET 500V, 28A, 0.175 Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Failchild s proprietary, planar Low Gate Charge ( Typ. 80nC) stripe, DMOS technology. Low Crss ( Typ. 38pF) This advance technology has been especi
irfb18n50k.pdf
IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.26 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 120 COMPLIANT Ruggedness Qgs (nC) 34 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 54 and Current Con
sihp18n50c.pdf
SiHP18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 100 % Avalanche Tested RDS(on) ( )VGS = 10 V 0.225 High Peak Current Capability Qg (Max.) (nC) 76 dV/dt Ruggedness Qgs (nC) 21 Qgd (nC) 29 Improved trr/Qrr Configuration Single Improved Gate Charge D High Power Dissipations Capabilit
sihf18n50c.pdf
SiHP18N50C, SiHF18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 100 % Avalanche Tested RDS(on) ( )VGS = 10 V 0.225 High Peak Current Capability Qg (Max.) (nC) 76 dV/dt Ruggedness Qgs (nC) 21 Qgd (nC) 29 Improved trr/Qrr Configuration Single Improved Gate Charge D High Power Dissipati
sihf18n50d.pdf
SiHF18N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.28 - Low Input Capacitance (Ciss) Qg (max.) (nC) 76 - Reduced Capacitive Switching Losses Qgs (nC) 11 - High Body Diode Ruggedness Qgd (nC) 17 - Avalanche Energy Rated (UIS)
sihf8n50l.pdf
New Product SiHF8N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 RDS(on) ( )VGS = 10 V 1 100 % Avalanche Tested Qg (Max.) (nC) 34 Gate Charge Improved Qgs (nC) 7.8 Trr/Qrr Improved Qgd (nC) 10.4 Configuration Single Compliant to RoHS Directive 2002/95/EC D TO-220 FULLPAK G S S D G N-Chan
irfb18n50k sihfb18n50k.pdf
IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.26 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 120 COMPLIANT Ruggedness Qgs (nC) 34 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 54 and Current Con
spd08n50c3.pdf
SPD08N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.6 A Worldwide best RDS(on) in TO-252 PG-TO252 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPD08N50C3 PG-TO25
spp08n50c3 spi08n50c3 spp08n50c3 spi08n50c3 spa08n50c3 rev.2.91.pdf
SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.6 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 Ultra low effective capacitances 2 1 P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111
ixtp8n50pm.pdf
Preliminary Technical Information IXTP 8N50PM VDSS = 500 V PolarHVTM ID25 = 4 A Power MOSFET RDS(on) 0.8 (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings OVERMOLDED TO-220 (IXTP...M) OUTLINE VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS
ixfp8n50pm.pdf
Preliminary Technical Information IXFP 8N50PM VDSS = 500 V PolarHVTMHiPerFET ID25 = 4.4 A Power MOSFET RDS(on) 0.8 (Electrically Isolated Tab) trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings (IXTP...M) OUTLINE VDSS TJ = 25 C to
ixfn44n50 ixfk44n50 ixfn48n50 ixfk48n50.pdf
VDSS ID25 RDS(on) HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETs IXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings (IXFK) IXFK IXFN VDSS TJ = 25 C to 150 C 500 500 V VDGR TJ = 25 C
ixfk78n50p3 ixfx78n50p3.pdf
Preliminary Technical Information Polar3TM HiPerFETTM VDSS = 500V IXFK78N50P3 Power MOSFETs ID25 = 78A IXFX78N50P3 RDS(on) 68m trr 250ns N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode G D Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 500 V Tab VDGR TJ = 25 C
ixft28n50q.pdf
Advanced Technical Information IXFH 28N50Q VDSS = 500 V HiPerFETTM IXFT 28N50Q ID25 = 28 A Power MOSFETs RDS(on) = 0.20 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500
ixz4df18n50.pdf
IXZ4DF18N50 RF Power MOSFET & DRIVER 500 Volts Driver / MOSFET Combination 19 A DEIC-515 Driver combined with IXZ318N50 MOSFET 0.29 Ohms Gate driver matched to MOSFET Features Isolated substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power cycling capability IXYS advanced Z-MOS process Low Rds(ON)
ixfk44n50 ixfn44n50 ixfk48n50 ixfn48n50.pdf
VDSS ID25 RDS(on) HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETs IXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings (IXFK) IXFK IXFN VDSS TJ = 25 C to 150 C 500 500 V VDGR TJ = 25 C
ixz318n50.pdf
IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 500 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 19 A RDS(on) Symbol Test Conditions Maximum Ratings 0.34 TJ = 25 C to 150 C VDSS 500 V PDC = 880 W TJ = 25 C to 150 C; RGS = 1 M VDGR
ixta8n50p ixtp8n50p.pdf
IXTA 8N50P VDSS = 500 V PolarHVTM IXTP 8N50P ID25 = 8 A Power MOSFET RDS(on) 0.8 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V G VGS Continuous 30 V S VGSM Transient 40 V (TAB) ID25 TC = 25 C8 A IDM
ixfn44n50u2-u3 ixfn48n50u2-u3.pdf
VDSS ID (cont) RDS(on) trr HiPerFETTM 500 V 44 A 0.12 W 35 ns IXFN44N50U2 IXFN44N50U3 Power MOSFETs IXFN48N50U2 IXFN48N50U3 500 V 48 A 0.10 W 35 ns 3 3 Buck & Boost Configurations for PFC & Motor Control Circuits 4 2 2 Preliminary data 4 1 1 miniBLOC, SOT-227 B Symbol Test Conditions Maximum Ratings 1 VDSS TJ = 25 C to 150 C 500 V 2 VDGR TJ = 25 C to 150 C; RGS = 1 MW 5
ixfk48n50q ixfx48n50q ixfk44n50q ixfx44n50q.pdf
VDSS ID25 RDS(on) HiPerFETTM IXFK/IXFX 48N50Q 500 V 48 A 100 m Power MOSFETs IXFK/IXFX 44N50Q 500 V 44 A 120 m Q-CLASS trr 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg PLUS 247TM (IXFX) High dV/dt, Low trr Symbol Test Conditions Maximum Ratings (TAB) G D VDSS TJ = 25 C to 150
ixzr18n50a ixzr18n50b.pdf
IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 500 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 19 A RDS(on) 0.37 Symbol Test Conditions Maximum Ratings TJ = 25 C to 150 C VDSS 500 V PDC = 350 W TJ = 25 C to 150 C; RGS
ixfa8n50p3 ixfp8n50p3.pdf
Advance Technical Information Polar3 TM HiPerFETTM VDSS = 500V IXFA8N50P3 Power MOSFETs ID25 = 8A IXFP8N50P3 RDS(on) 800m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 500 V TO-220AB (IXFP) VDGR TJ = 25 C to 150 C, RGS = 1M
ixty08n50d2-ixta08n50d2-ixtp08n50d2.pdf
Preliminary Technical Information Depletion Mode VDSX = 500V IXTY08N50D2 MOSFET ID(on) > 800mA IXTA08N50D2 RDS(on) 4.6 IXTP08N50D2 N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-263 AA (IXTA) VDSX TJ = 25 C to 150 C 500 V VGSX Continuous 20 V VGSM Transient 30 V G S PD TC = 25 C60 W D (Tab) TJ - 55
fdpf8n50nzf.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fqa28n50.pdf
April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 28.4A, 500V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 110 nC) planar stripe, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has be
fdp18n50 fdpf18n50 fdpf18n50t.pdf
FDP18N50 / FDPF18N50 / FDPF18N50T N-Channel UniFETTM MOSFET 500 V, 18 A, 265 m Features RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 9 A Description Low Gate Charge (Typ. 45 nC) UniFETTM MOSFET is ON Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Crss (Typ. 25 pF) This MOSFET is tailored to reduce on-state resistance, and to
fdp18n50 fdpf18n50.pdf
October 2006 TM UniFET FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description 18A, 500V, RDS(on) = 0.265 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 45 nC) stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially
fdd8n50nz.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fda18n50.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdp8n50nz fdpf8n50nz.pdf
October 2013 FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m Features Description RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A UniFETTM II MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 14 nC) technology. This advanced MOSFET family has the smallest Low Crss (
fda28n50.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth
ndf08n50z ndp08n50z.pdf
NDF08N50Z, NDP08N50Z N-Channel Power MOSFET 500 V, 0.69 W Features Low ON Resistance Low Gate Charge http //onsemi.com 100% Avalanche Tested These Devices are Pb-Free and are RoHS Compliant VDSS RDS(ON) (TYP) @ 3.6 A ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) 500 V 0.69 W Rating Symbol NDF08N50Z NDP08N50Z Unit Drain-to-Source Voltage VDSS 500 V N
fda28n50f.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
18n50.pdf
UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET 1 1 TO-230 TO-220F1 DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche and commutation mode. It can provide minimum
8n50h.pdf
UNISONIC TECHNOLOGIES CO., LTD 8N50H Power MOSFET 8A, 500V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 8N50H is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe TO-220F and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pul
fmr28n50es.pdf
FMR28N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3PF Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5V)
fmh28n50es.pdf
FMH28N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P (Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5
fmh28n50e.pdf
FMH28N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)
fmp08n50e.pdf
FMP08N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)
fmr28n50e.pdf
FMR28N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3PF Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V) H
fmv08n50e.pdf
FMV08N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.
tsm8n50ch tsm8n50cp.pdf
TSM8N50 500V N-Channel MOSFET TO-251 TO-252 PRODUCT SUMMARY Pin Definition (IPAK) (DPAK) 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 500 0.85 @ VGS =10V 7.2 Features Block Diagram Low On-Resistance. High power and current handing capability. Ordering Information Part No. Package Packing TSM8N50CH C5G TO-251 75pcs / Tube TSM8N50CP ROG TO-252
aotf8n50.pdf
AOT8N50/AOTF8N50 500V, 8A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT8N50 & AOTF8N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)
aot8n50.pdf
AOT8N50/AOTF8N50 500V, 8A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT8N50 & AOTF8N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)
aot8n50 aotf8n50.pdf
AOT8N50/AOTF8N50 500V, 9A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT8N50 & AOTF8N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 9A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)
aowf8n50.pdf
AOWF8N50 500V, 8A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOWF8N50 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 8A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)
ap18n50w.pdf
AP18N50W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.27 Fast Switching Characteristic ID 20A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance
ftp08n50 fta08n50.pdf
FTP08N50/FTA08N50 500V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features Low ON Resistance 500V 0.9 8.0A Low Gate Charge (typical 33nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free Applications High Efficiency SMPS Adaptor/Charger Active PFC LCD Panel Power Ordering Information Part Number Package Marking FTP08N50 TO-
afn08n50t220ft afn08n50t220t.pdf
AFN08N50 Alfa-MOS 500V / 8A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN08N50 is an N-channel enhancement mode Power 500V/4A,RDS(ON)=0.9 (MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state
sif8n50c.pdf
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF8N50C N- MOS / N-CHANNEL POWER MOSFET SIF8N50C N- MOS / N-CHANN
jcs18n50be jcs18n50se jcs18n50ce jcs18n50fe.pdf
N N- CHANNEL MOSFET R JCS18N50E MAIN CHARACTERISTICS Package ID 18 A VDSS 500 V Rdson-max @Vgs=10V 0.27 Qg-typ 48.7nC Eoss @Vdss=400V 5.84mJ APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS
jcs18n50we jcs18n50abe.pdf
N N- CHANNEL MOSFET R JCS18N50WE ABE MAIN CHARACTERISTICS Package ID 19 A VDSS 500 V Rdson-max @Vgs=10V 0.27 Qg-typ 48.7nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
mp18n50eif mp18n50eic.pdf
N N- CHANNEL MOSFET R MP18N50EI MAIN CHARACTERISTICS Package ID 18 A VDSS 500 V Rdson-max @Vgs=10V 0.27 Qg-typ 67.8nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
mtn8n50fp.pdf
Spec. No. C720FP Issued Date 2009.10.01 CYStech Electronics Corp. Revised Date 2011.03.30 Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 500V RDS(ON) 0.78 typ. MTN8N50FP ID 8A Description The MTN8N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r
mtn8n50e3.pdf
Spec. No. C742E3 Issued Date 2009.10.01 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 500V RDS(ON) 0.85 (max) MTN8N50E3 ID 8A Description The MTN8N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-res
18n50a.pdf
GOFORD 18N50A Description Features VDSS RDS(ON) ID @ 10V (typ) 18A 500V 0.22 Fast switching 100% avalanche tested Improved dv/dt capability Application Active power factor correction Uninterruptible Power Supply (UPS) Electronic lamp ballasts Absolute Maximum Ratings TC=25 unless otherwise specified Max. Symbol Parameter Units
sdf18n50 sdp18n50.pdf
SDP18N50 SDF18N50 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Typ Rugged and reliable. 500V 18A 0.25 @ VGS=10V TO-220 and TO-220F Package. D G G D S G D S SDP SERIES SDF SERIES TO-220 TO-220F S ORDERING INFORMATION Ordering Code Package M
sdf08n50 sdp08n50.pdf
SDP08N50 SDF08N50 a S mHop Microelectronics C orp. Ver 2.4 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) ( ) Typ VDSS ID Rugged and reliable. 500V 8A 0.7 @ VGS=10V TO-220 and TO-220F Package. D G G D S G D S SDP SERIES SDF SERIES TO-220 TO-220F S ORDERING INFORMATION Ordering Code Package Ma
ssf18n50f.pdf
SSF18N50F Main Product Characteristics VDSS 500V RDS(on) 0.22ohm(typ.) ID 18A Marking and pin TO220F Schematic diagram Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 operating
cs8n50 a8r.pdf
Silicon N-Channel Power MOSFET R CS8N50 A8R General Description VDSS 500 V CS8N50 A8R, the silicon N-channel Enhanced ID 8 A PD(TC=25 ) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs8n50f a9r.pdf
Silicon N-Channel Power MOSFET R CS8N50F A9R General Description VDSS 500 V CS8N50F A9R, the silicon N-channel Enhanced ID 8 A PD(TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cm8n50f.pdf
R CM8N50F www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 1 2 1 2 3
cm18n50p.pdf
R C1N0 M85P www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 1 2 1 2 3 3
18n50.pdf
18N50 18A 500V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 500V planar technology which reduce the conduction loss, improve switching I = 18.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) =0.24 2 Features Fast switching ESD imp
d8n50.pdf
D8N50 8A 500V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 500V planar technology which reduce the conduction loss, improve switching I = 8.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) =0.72 2 Features Fast switching ESD impro
f8n50.pdf
F8N50 8A 500V N-channel Enhancement Mode Power MOSFET 1 Description These, the silicon N-channel enhanced VDMOSFETs, is 2 D V = 500V DSS obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and R = 0.7 DS(on) (TYP) G enhance the avalanche energy. Which accords with the 1 RoHS standard. I = 8A 3 S D 2 Feature
18n50d.pdf
18N50D 18A 500V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 500V planar technology which reduce the conduction loss, improve switching I = 18.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) =0.24 2 Features Fast switching ESD im
f18n50.pdf
F18N50 18A 500V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 500V planar technology which reduce the conduction loss, improve switching I = 18.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP)
svf18n50f svf18n50t svf18n50pn svf18n50fj.pdf
SVF18N50F/T/PN/FJ 18A 500V N SVF18N50F/T/PN/FJ N MOS F-CellTM VDMOS
mdf18n50.pdf
MDF18N50 N-Channel MOSFET 500V, 18 A, 0.27 General Description Features The MDF18N50 uses advanced MagnaChip s MOSFET V = 500V DS Technology, which provides low on-state resistance, high I = 18A @V = 10V D GS R 0.27 @V = 10V switching performance and excellent quality. DS(ON) GS MDF18N50 is suitable device for SMPS, high speed switching Applications and general
mdf18n50bth mdp18n50bth.pdf
MDP18N50B / MDF18N50B N-Channel MOSFET 500V, 18.0 A, 0.27 General Description Features The MDP/F18N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 18.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.27 @VGS = 10V excellent quality. MDP/F18N50B is suitable device for SMPS, HID Applications and general
mdp18n50th.pdf
MDP18N50 N-Channel MOSFET 500V, 18.0 A, 0.27 Features General Description V = 500V DS The MDP18N50 uses advanced Magnachip s I = 18.0A @V = 10V D GS MOSFET Technology, which provides low on- R
mdq18n50gth mdq18n50gtp.pdf
MDQ18N50G N-Channel MOSFET 500V, 20.0A, 0.27 General Description Features . V = 500V DS These N-channel MOSFET are produced using advanced I = 20.0A @ V = 10V D GS MagnaChip s MOSFET Technology, which provides low on- R 0.27 @ V = 10V DS(ON) GS state resistance, high switching performance and excellent quality. Applications These devices are s
msf8n50.pdf
MSF8N50 500V N-Channel MOSFET Description The MSF8N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features BVDSS=550V typically @ Tj=150 C Low On
ms18n50.pdf
MS18N50 500V N-channel MOSFET Description The MS18N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrinsic
msf18n50.pdf
MSF18N50 500V N-Channel MOSFET Description The MSF18N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. he TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrins
wff18n50.pdf
WFF18N50 WFF18N50 WFF18N50 WFF18N50 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 18A,500V,R (Max0.27 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced
wfw18n50.pdf
WFW18N50 WFW18N50 WFW18N50 WFW18N50 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 18A,500V,R (Max0.27 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description These N-Channel enhancement
wfw18n50n.pdf
WFW18N50N WFW18N50N WFW18N50N WFW18N50N Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 18A,500V,R (Max0.27 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is prod
wfw18n50w.pdf
WFW18N50W WFW18N50W WFW18N50W WFW18N50W Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 18A,500V,R (Max0.27 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is prod
wfp18n50.pdf
WFP18N50 WFP18N50 WFP18N50 WFP18N50 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 18A,500V,R (Max0.27 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced
bl8n50-p bl8n50-a bl8n50-d bl8n50-i bl8n50-u.pdf
BL8N50 Power MOSFET 1 Description Step-Down Converter BL8N50, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Param
ctm08n50.pdf
CTM08N50 CTM08N50 Crownpo Technology Crownpo Technology Power MOSFET Features General Description Robust High Voltage Termination This high voltage MOSFET uses an advanced termination Avalanche Energy Specified scheme to provide enhanced voltage-blocking capability Source-to-Drain Diode Recovery Time Comparable to a without degrading performance over time. In addition,
fhf18n50a.pdf
N N-CHANNEL MOSFET FHF18N50A MAIN CHARACTERISTICS FEATURES ID 18A Low gate charge VDSS 500V Crss ( 23pF) Low Crss (typical 23pF ) Rdson-typ @Vgs=10V 0.31 Fast switching Qg-typ 58nC 100% 100% avalanche tested dv/dt Improved dv/d
fhf18n50c.pdf
N N-CHANNEL MOSFET FHF18N50C MAIN CHARACTERISTICS FEATURES ID 18A Low gate charge VDSS 500V Crss ( 23pF) Low Crss (typical 23pF ) Rdson-typ @Vgs=10V 0.31 Fast switching Qg-typ 58nC 100% 100% avalanche tested dv/dt Improved dv/d
fha28n50a.pdf
N N-CHANNEL MOSFET FHA28N50A MAIN CHARACTERISTICS FEATURES ID 28A Low gate charge VDSS 500V Crss ( 23pF) Low Crss (typical 23pF ) Rdson-typ @Vgs=10V 0.14 Fast switching Qg-typ 102nC 100% 100% avalanche tested dv/dt Improved dv/
hy8n50t.pdf
HY8N50T / HY8N50FT 500V / 8.0A 500V, RDS(ON)=0.9 @VGS=10V, ID=4.0A N-Channel Enhancement Mode MOSFET Features Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, PFC and SMPS 1 1 2 2 In compliance with EU RoHs 2002/95/EC Directives G G 3 3 D D S S Mechanica
hy18n50w.pdf
SINGLE FIG.SINGLE PHASE HALF WAVE 60Hz DERATING CURVE FIG. 2 MAXIMUM NON- T1 FORWARD CURRENT AMBIENT TEMPERATURE ( ) 1 2 5 10 1 25 50 75 10 20 150 175 0.00 0.2 0.4 0.6 4 100 125 100 HY18N50W 500V / 18A 500V, RDS(ON)=0.32W@VGS=10V, ID=9A N-Channel Enhancement Mode MOSFET Features TO-3PN Low On-State Resistance Fast Switching Low Gate Charge & Low CR
jfpc18n50c jffm18n50c.pdf
JFFM18N50C JFPC18N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 500V, RDS(on)typ. = 0.24 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf
jfam18n50c.pdf
JFAM18N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 500V, RDS(on)typ. = 0.24 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and
kia18n50h.pdf
18A 500V 18N50H N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Description The KIA18N50H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction. 2. Features R =0.25 @V =10V DS(on) GS Lowgate c
slw18n50c.pdf
SLW18N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced planar - 18A, 500V, RDS(on)typ = 212m stripe DMOS technology. This advanced technology has been - Low gate charge especially tailored to minimize conduction loss, provide superior - Low Crss - Fast switching switching performance, and withstand high energy pulse in
slp18n50c slf18n50c.pdf
SLP18N50C / SLF18N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 18A, 500V, RDS(on)typ. = 236m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 69nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching
ptw28n50.pdf
PTW28N50 500V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 500V 170m 28A RDS(ON),typ.=170 m @VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS Ordering Information Part Number Package Brand PTW28N50 TO-3P Absolute Maxim
swf18n50d swt18n50d.pdf
SW18N50D N-channel Enhanced mode TO-220F /TO-247 MOSFET TO-220F TO-247 BVDSS 500V Features ID 18A High ruggedness RDS(ON) 0.24 Low RDS(ON) (Typ 0.24 )@VGS=10V Low Gate Charge (Typ 88nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 2 1 3 3 Application LED , Charger, PC Power 1. Gate 2. Drain 3. Source 3 General
sw18n50d swf18n50d swt18n50d.pdf
SW18N50D N-channel Enhanced mode TO-220F /TO-247 MOSFET TO-220F TO-247 BVDSS 500V Features ID 18A High ruggedness RDS(ON) 0.24 Low RDS(ON) (Typ 0.24 )@VGS=10V Low Gate Charge (Typ 88nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 2 1 3 3 Application LED , Charge, PC Power 1. Gate 2. Drain 3. Source 3 General D
hfs18n50u.pdf
Apr 2014 BVDSS = 500 V RDS(on) typ = 0.22 HFS18N50U ID = 18 A 500V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 58 nC (Typ.) Extended Safe Operating Area L
hfs18n50ut.pdf
June 2020 BVDSS = 500 V RDS(on) typ = 0.22 HFS18N50UT ID = 18 A 500V N-Channel MOSFET TO-220FT FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 58 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)
hfp18n50u.pdf
Apr 2014 BVDSS = 500 V RDS(on) typ = 0.22 HFP18N50U ID = 18 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 58 nC (Typ.) Extended Safe Operating Area Low
hfh18n50s.pdf
Nov 2009 BVDSS = 500 V RDS(on) typ = 0.220 HFH18N50S ID = 19 A 500V N-Channel MOSFET TO-3P FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 52 nC (Typ.) Extended Safe Operating Area Lower RDS(ON
smos44n50 smos48n50.pdf
SMOS44N50, SMOS48N50 Power MOSFETs Dim. Millimeter Inches D Dimensions SOT-227(ISOTOP) S Min. Max. Min. Max. A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 H 37.80 38.20 1.489 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.0
sl18n50f.pdf
SL18N50F N-Channel Power MOSFET Features 18.0A, 500V, R =0.25 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Schematic diagram Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction TO-220F Absolute Maximum Ratings(Tc=25 C unless otherwi
msu8n50q.pdf
500V/8A POWER MOSFET (N-Channel) MSU8N50Q 500V/8A Power MOSFET (N-Channel) General Description MSU8N50Q is a N-Channel enhancement mode power MOSFET with advanced technology. It is designed to have Better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high TO-262 energy pulse in the avalanche and commutati
tmd8n50z tmu8n50z.pdf
TMD8N50Z(G)/TMU8N50Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 8A
tmp8n50z tmpf8n50z.pdf
TMP8N50Z(G)/TMPF8N50Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 8A
tsa28n50m.pdf
TSA28N50M 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 28A,500V,Max.RDS(on)=0.16 @ advanced planar stripe DMOS technology. This advanced technology has been especially tailored to VGS =10V minimize on-state resistance, provide superior switching Low gate charge(typical 90nC) performance, and withstand high energ
tsf18n50mr.pdf
TSF18N50MR 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 18.0A,500V,Max.RDS(on)=0.32 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 45nC) minimize on-state resistance, provide superior switching High ruggedness performance, and with
tsa18n50mr.pdf
TSA18N50MR 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 18.0A,500V,Max.RDS(on)=0.31 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 42nC) minimize on-state resistance, provide superior switching High ruggedness performance, and with
wml28n50c4 wmk28n50c4 wmn28n50c4 wmm28n50c4 wmj28n50c4.pdf
WML28N5 WM C4 50C4, MK28N50C WMN2 MJ28N50C 28N50C4, WMM28N50C4, WM C4 500V 0.1 S T Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM C4 is ate ce.
wmk18n50d1b wml18n50d1b wmj18n50d1b.pdf
WMK18N50D1B WML18N50D1B WMJ18N50D1B 500V 18A 0.28 N-ch Power MOSFET Description TO-247 TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D S G D S G D S
wml18n50c4 wmo18n50c4 wmk18n50c4 wmn18n50c4 wmm18n50c4 wmj18n50c4.pdf
WML18N50C4, WMO18N5 WM C4 W 50C4, MK18N50C WMN18N50C4, WMM18N50C4, WM C4 MJ18N50C 500V 0.25 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM C
cs18n50f cs18n50p cs18n50v cs18n50w.pdf
CS18N50F,CS18N50P, nvert Suzhou Convert Semiconductor Co ., Ltd. CS18N50V,CS18N50W 500V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS18N50F
cs18n50f cs18n50p cs18n50v.pdf
nvert CS18N50F,CS18N50P,CS18N50V Suzhou Convert Semiconductor Co ., Ltd. 500V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS18N50F TO-220F CS1
cst08n50u cst08n50d cst08n50f.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. CST08N50U, CST08N50D,CST08N50F 500V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CST08N50U TO-251
fir18n50fg.pdf
FIR18N50FG N - CHANNEL MOSFET-G PIN Connection TO-220F VDSS 500 V ID 18 A PD(TC=25 ) 42.8 W RDS(ON)Typ 0.31 General Description G D S , the silicon N-channel Enhanced FIR18N50FG VDMOSFETs, is obtained by the self-aligned planar Technology D which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor G can b
hsp8n50.pdf
HSP8N50 Description Product Summary HSP8N50 is Fortunatus high voltage MOSFET VDS 500 V family based on advanced planar stripe DMOS technology. This advanced MOSFET family has RDS(ON),typ 850 m optimized on-state resistance, and also provides ID 8 A superior switching performance and higher avalanche energy strength. This device family is suitable for high efficiency swi
jmpc18n50bj.pdf
JMPC18N50BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 500V, 18A Load Switch RDS(ON)
jmpf18n50bj.pdf
JMPF18N50BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 500V, 18A Load Switch RDS(ON)
lnc18n50 lnd18n50.pdf
LNC18N50/LND18N50 Lonten N-channel 500V, 18A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 500V DSS advanced planar VDMOS technology. The I 18A D resulting device has low conduction resistance, R 0.28 DS(on),max superior switching performance and high avalanche Q 50.5 nC g,typ energy. Features Low R DS(on) Low gate charge (typ. Q =5
spc18n50g.pdf
SPC18N50G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 550 DS J ID=18A(Vgs=10V) R max. at 25oC ( ) V =10V 0.30 DS(on) GS Ultra Low Gate Charge Q max. (nC) 88 g Improved dv/dt Capability Q (nC) 21 gs 100% Avalanche Tested Q (nC) 28 gd ROHS compliant Configuration single Ap
smirf18n50.pdf
SMIRF18N50 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 18A SMIRF18N50 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 500V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.35 (VGS=10V, ID=9A) on-state resistance, provide superior
vbzmb18n50.pdf
VBZMB18N50 www.VBsemi.com N-Channel (D-S) Power MOSFET 550V FEATURES PRODUCT SUMMARY Optimal Design VDS (V) 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.26 - Low Input Capacitance (Ciss) Qg max. (nC) 150 - Reduced Capacitive Switching Losses Qgs (nC) 12 - High Body Diode Ruggedness Qgd (nC) 25 - Avalanche Energy Rated (UIS) Configuration
vbzm8n50.pdf
VBZM8N50 www.VBsemi.com N hannel 500 D S Power MOSFET FEATURES PRODUCT SUMMARY Low gate charge Qg results in simple drive VDS (V) 500 requirement RDS(on) ( )VGS = 10 V 1.1 Improved gate, avalanche and dynamic dV/dt Qg max. (nC) 49 ruggedness Qgs (nC) 13 Fully characterized capacitance and avalanche voltage Qgd (nC) 20 and current Configuration Single D TO-2
hm18n50a hm18n50f.pdf
HM18N50A / HM18N50F 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 18A, 500V, RDS(on)typ. = 236m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 69nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching
hms8n50k hms8n50i.pdf
HMS8N50K/HMS8N50I HMS8N50K/HMS8N50I 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using H&M Semi s - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 25nC) This advanced technology has been especially tailored - High ruggedness to minimize conduction loss, provide superior switching - Fast swi
fxn28n50p.pdf
FuXin Semiconductor Co., Ltd. FXN28N50P Series Rev.A General Description Features The FXN28N50P uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID =28A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indu
fxn28n50f.pdf
FuXin Semiconductor Co., Ltd. FXN28N50F Series Rev.A General Description Features The FXN28N50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID =28A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indu
fxn28n50t.pdf
FuXin Semiconductor Co., Ltd. FXN28N50T Series Rev.A General Description Features The FXN28N50T uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID =28A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust
fxn18n50f.pdf
FuXin Semiconductor Co., Ltd. FXN18N50F Series Rev.A General Description Features The FXN18N50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID = 18A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in ind
spp08n50c3.pdf
isc N-Channel MOSFET Transistor SPP08N50C3 ISPP08N50C3 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION New revolutionary high voltage technology Ultra low effective capacitance ABSOLUTE MAXIMUM R
mdf18n50th.pdf
isc N-Channel MOSFET Transistor MDF18N50TH FEATURES Drain-source on-resistance RDS(on) 0.27 (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Power Supply High Current, High Speed Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
aotf8n50.pdf
isc N-Channel MOSFET Transistor AOTF8N50 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
spd08n50c3.pdf
isc N-Channel MOSFET Transistor SPD08N50C3, ISPD08N50C3 FEATURES Static drain-source on-resistance RDS(on) 600m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 50
fmh28n50es.pdf
isc N-Channel MOSFET Transistor FMH28N50ES FEATURES Drain Current I 28A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching Switching regulator, DC-DC conver
fqa28n50f.pdf
isc N-Channel MOSFET Transistor FQA28N50F FEATURES With TO-3P packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So
fdd8n50nz.pdf
Isc N-Channel MOSFET Transistor FDD8N50NZ FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt
aot8n50.pdf
isc N-Channel MOSFET Transistor AOT8N50 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos
mdp18n50bth.pdf
isc N-Channel MOSFET Transistor MDP18N50BTH FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.27 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
mdq18n50gtp.pdf
isc N-Channel MOSFET Transistor MDQ18N50GTP FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.27 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
mdf18n50bth.pdf
isc N-Channel MOSFET Transistor MDF18N50BTH FEATURES Drain-source on-resistance RDS(on) 0.27 (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Power Supply High Current, High Speed Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
fda28n50.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor FDA28N50 FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE
mdp18n50th.pdf
isc N-Channel MOSFET Transistor MDP18N50TH FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.27 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
18n50mf.pdf
18N50MF 18 Amps,500 Volts N-CHANNEL MOSFET FEATURE TO-220MF 18A,500V,R =0.35 @V =10V/9A DS(ON)MAX GS Low gate charge Low C iss Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum Ratings(T =25 ,unless otherwise noted) C Parameter Symbol UNIT 18N50MF Drain-Source Voltage V 500 DSS V Gate-Source Voltage V 30 GSS Continu
Otros transistores... 2N50 , 3N50 , 3N50Z , 4N50 , 5N50 , 5N50K , 6N50 , 7N50 , 13N50 , 1N40 , 2N40 , 3N40 , 4N40 , 5N40 , 6N40 , 7N40 , 8N40 .
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