All MOSFET. 8N50 Datasheet

 

8N50 Datasheet and Replacement


   Type Designator: 8N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 18 nC
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.77 Ohm
   Package: TO-220 TO-220F1 TO-220F2
 
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8N50 Datasheet (PDF)

 ..1. Size:176K  utc
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8N50

UNISONIC TECHNOLOGIES CO., LTD 8N50 Preliminary Power MOSFET 8A, 500V N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The UTC 8N50 is an N-channel mode power MOSFET usingUTCs advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state 1resistance and superior switching performance. It also can withstand TO-220

 ..2. Size:1250K  cn wxdh
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8N50

8N508A 500V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 500Vplanar technology which reduce the conduction loss, improve switchingI = 8.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard.RDS(on)TYP)=0.722 Features Fast switching ESD improv

 0.1. Size:1493K  1
gpt18n50g gpt18n50dg.pdf pdf_icon

8N50

GPT18N50 / GPT18N50D POWER FIELD EFFECT TRANSISTOR Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 2013/6/26 Rev1.6 Greatpower Microelectronic Corp. Page 4 GPT18N50 / GPT18N50D POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-220F 2013/6/26 Rev1.6 Greatpower Microelectronic Corp. Page 5 GPT18N50 / GPT18N50D

 0.2. Size:1208K  1
fqp18n50v2 fqpf18n50v2.pdf pdf_icon

8N50

QFETFQP18N50V2/FQPF18N50V2 500V N-Channel MOSFETFeatures Description 550V @TJ = 150C These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Typ. RDS(on) = 0.265 @VGS = 10 VDMOS technology. Low gate charge (typical 42 nC)This advanced technology has been especially tailored to mini- Lo

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