3N40 Todos los transistores

 ..1. Size:193K  utc
 3n40.pdf

UNISONIC TECHNOLOGIES CO., LTD 3N40 Preliminary Power MOSFET 3 A, 400 V N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-220F The UTC 3N40 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can

 ..2. Size:230K  inchange semiconductor
 3n40.pdf

isc N-Channel MOSFET Transistor 3N40 FEATURES Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 2.6 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch regulators Switching converters motor drivers and relay drivers

 0.1. Size:103K  philips
 php3n40e phb3n40e phd3n40e.pdf

Philips Semiconductors Product specification PowerMOS transistors PHP3N40E, PHB3N40E, PHD3N40E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 2.5 A g Low thermal resistance RDS(ON) 3.5 s GENERAL DESCRIPTION N-ch

 0.2. Size:75K  philips
 php3n40e 3.pdf

Philips Semiconductors Product specification PowerMOS transistors PHP3N40E, PHB3N40E, PHD3N40E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 2.5 A g Low thermal resistance RDS(ON) 3.5 s GENERAL DESCRIPTION N-ch

 0.3. Size:104K  philips
 php13n40e 3.pdf

Philips Semiconductors Product specification PowerMOS transistors PHP13N40E, PHB13N40E, PHW13N40E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 13.7 A g Low thermal resistance RDS(ON) 0.35 s GENERAL DESCRIPTION

 0.4. Size:63K  philips
 phx3n40e 3.pdf

Philips Semiconductors Product specification PowerMOS transistors PHX3N40E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 1.7 A g Isolated package RDS(ON) 3.5 s GENERAL DESCRIPTION PINNING SOT186A N-channel, enh

 0.5. Size:841K  st
 stn3n40k3.pdf

STN3N40K3 N-channel 400 V, 3 , 1.8 A SOT-223 SuperMESH3 Power MOSFET Features Order code VDSS RDS(on) max ID PW STN3N40K3 400 V

 0.6. Size:973K  st
 std3n40k3.pdf

STD3N40K3 N-channel 400 V, 2.7 typ., 2 A SuperMESH3 Zener-protected Power MOSFET in a DPAK package Datasheet production data Features Order code VDSS RDS(on) max ID Pw STD3N40K3 400 V

 0.7. Size:261K  fairchild semi
 fdt3n40.pdf

November 2009 TM UniFET FDT3N40 400V N-Channel MOSFET Features Description 2A, 400V, RDS(on) = 3.4 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 4.5 nC) stripe, DMOS technology. Low Crss ( typical 3.7 pF) This advanced technology has been especially tailored to

 0.8. Size:812K  fairchild semi
 fdt3n40tf.pdf

April 2013 FDT3N40 N-Channel UniFETTM MOSFET 400 V, 2.0 A, 3.4 Features Description RDS(on) = 3.4 (Max.) @ VGS = 10 V, ID = 1.0 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 4.5 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 3.7 pF) pr

 0.9. Size:710K  fairchild semi
 fqpf3n40.pdf

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.6A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.2 pF) This advanced technology has bee

 0.10. Size:707K  fairchild semi
 fqp3n40.pdf

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.5A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.2 pF) This advanced technology has been

 0.11. Size:730K  fairchild semi
 fqb3n40tm fqi3n40tu.pdf

April 2000 TM QFET QFET QFET QFET FQB3N40 / FQI3N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.5A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.2 pF) This advanced technolog

 0.12. Size:705K  fairchild semi
 fqu3n40tu.pdf

April 2000 TM QFET QFET QFET QFET FQD3N40 / FQU3N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.0A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.2 pF) This advanced technolog

 0.13. Size:164K  fairchild semi
 mtp3n35 mtp3n40.pdf

 0.14. Size:762K  fairchild semi
 fdd3n40 fdu3n40.pdf

February 2007 TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description 2A, 400V, RDS(on) = 3.4 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 4.5 nC) stripe, DMOS technology. Low Crss ( typical 3.7 pF) This advanced technology has been especially ta

 0.15. Size:714K  fairchild semi
 fqd3n40tm.pdf

April 2000 TM QFET QFET QFET QFET FQD3N40 / FQU3N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.0A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.2 pF) This advanced technolog

 0.16. Size:149K  ixys
 ixtf03n400.pdf

Advance Technical Information High Voltage VDSS = 4000V IXTF03N400 Power MOSFET ID25 = 300mA RDS(on) 300 ( Electrically Isolated Tab) N-Channel Enhancement Mode ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 4000 V VDGR TJ = 25 C to 150 C, RGS = 1M 4000 V 1 VGSS Continuous 20 V 2 5 Isolated Tab VGSM T

 0.17. Size:186K  ixys
 ixth03n400 ixtv03n400s.pdf

Advance Technical Information High Voltage VDSS = 4000V IXTH03N400 ID25 = 300mA Power MOSFET IXTV03N400S RDS(on) 290 N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 4000 V D D (Tab) S VDGR TJ = 25 C to 150 C, RGS = 1M 4000 V VGSS Continuous 20 V VGSM Transie

 0.18. Size:1444K  onsemi
 fdd3n40 fdu3n40.pdf

 0.19. Size:118K  onsemi
 ndd03n40z.pdf

NDD03N40Z, NDT03N40Z N-Channel Power MOSFET 400 V, 3.4 W Features 100% Avalanche Tested Extremely High dv/dt Capability http //onsemi.com Gate Charge Minimized Very Low Intrinsic Capacitance V(BR)DSS RDS(ON) MAX Improved Diode Reverse Recovery Characteristics Zener-protected 400 V 3.4 W @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

 0.20. Size:151K  utc
 13n40.pdf

UNISONIC TECHNOLOGIES CO., LTD 13N40 Preliminary Power MOSFET 13A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N40 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand

 0.21. Size:685K  kec
 kf3n40w.pdf

KF3N40W SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES VDSS(Min.)= 400V, ID= 2A Drain-Source ON R

 0.22. Size:931K  kec
 kf3n40d-i.pdf

KF3N40D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF3N40D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS L avalanche characteristics. It is mainly suitable for LED Lighting and C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 switching mo

 0.23. Size:389K  aosemi
 aod3n40.pdf

AOD3N40 400V,2.6A N-Channel MOSFET General Description Product Summary The AOD3N40 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver VDS 500V@150 high levels of performance and robustness in popular AC- ID (at VGS=10V) 2.6A DC applications. RDS(ON) (at VGS=10V)

 0.24. Size:55K  ape
 ap03n40ah-hf.pdf

AP03N40AH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID 2.7A G RoHS Compliant & Halogen-Free S G D Description TO-252(H) S AP03N40A series are from Advanced Power innovated design and silicon process technolog

 0.25. Size:57K  ape
 ap03n40aj-hf.pdf

AP03N40AJ-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID 2.7A G RoHS Compliant & Halogen-Free S G Description D S The AP03N40A provide high blocking voltage to overcome voltage surge TO-251(J) and sag in the tou

 0.26. Size:55K  ape
 ap03n40ai-hf.pdf

AP03N40AI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID 2.7A G RoHS Compliant & Halogen-Free S Description AP03N40A series are from Advanced Power innovated design and G D silicon process technology to achieve t

 0.27. Size:57K  ape
 ap03n40ap-hf.pdf

AP03N40AP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID 2.7A G RoHS Compliant & Halogen-Free S Description The AP03N40A provide high blocking voltage to overcome voltage surge G TO-220(P) D and sag in the tough

 0.28. Size:92K  ape
 ap03n40j-hf.pdf

AP03N40J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 3.3 Simple Drive Requirement ID 2.1A G RoHS Compliant & Halogen-Free S G Description D S Advanced Power MOSFETs from APEC provide the designer with TO-251(J) the best combination of fast

 0.29. Size:92K  ape
 ap03n40i-hf.pdf

AP03N40I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 3.3 Simple Drive Requirement ID 2.1A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz

 0.30. Size:189K  crhj
 cs3n40 a3h.pdf

Silicon N-Channel Power MOSFET R CS3N40 A3H General Description VDSS 400 V CS3N40 A3H, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.31. Size:195K  crhj
 cs3n40 a4h.pdf

Silicon N-Channel Power MOSFET R CS3N40 A4H General Description VDSS 400 V CS3N40 A4H, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.32. Size:175K  crhj
 cs3n40 a23.pdf

Silicon N-Channel Power MOSFET R CS3N40 A23 General Description VDSS 400 V CS3N40 A23, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.33. Size:130K  tysemi
 kqb3n40.pdf

SMD Type IC SMD Type Transistors SMDType SMDType IC Product specification KQB3N40 TO-263 Unit mm Features 2.5A, 400 V. RDS(ON) =3.4 @VGS =10V 4.57+0.2 -0.2 +0.1 1.27-0.1 Low gate charge (typical 6.0nC) Low Crss(typical 4.2pF) Fast switching 100% avalanche tested +0.1 0.1max 1.27-0.1 lmproved dv/dt capability 0.81+0.1 -0.1 2.54 1gate 1Gate 2.54+0.2 +0.2 -0.2 +0.1 5.

 0.34. Size:907K  magnachip
 mdd3n40rh.pdf

MDD3N40 N-Channel MOSFET 400V, 2.0A, 3.4 General Description Features The MDD3N40 use advanced Magnachip s V = 400V DS MOSFET Technology, which provides low on-state I = 2.0A @V = 10V D GS resistance, high switching performance and RDS(ON) 3.4 @VGS = 10V excellent quality. MDD3N40 are suitable device for SMPS and Applications general purpose appli

 0.35. Size:1123K  magnachip
 mdht3n40urh.pdf

MDHT3N40 N-Channel MOSFET 400V, 1.5A, 3.4 General Description Features The MDHT3N40 uses advanced Magnachip s VDS = 400V MOSFET Technology, which provides low on-state @VGS = 10V ID = 1.5A resistance, high switching performance and @VGS = 10V RDS(ON) 3.4 excellent quality. MDHT3N40 is suitable device for SMPS, HID and general purpose applications. Applications

 0.36. Size:1013K  magnachip
 mdis3n40th.pdf

MDIS3N40 N-Channel MOSFET 400V, 2.0A, 3.4 General Description Features The MDIS3N40 uses advanced Magnachip s V = 400V DS MOSFET Technology, which provides low on-state I = 2.0A @V = 10V D GS resistance, high switching performance and excellent RDS(ON) 3.4 @VGS = 10V quality. MDIS3N40 is suitable device for SMPS, HID and general purpose applications

 0.37. Size:537K  trinnotech
 tmd3n40zg tmu3n40zg.pdf

TMD3N40ZG/TMU3N40ZG Features VDSS = 440 V @Tjmax Low gate charge ID = 2A 100% avalanche tested RDS(on) = 3.4 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance D D-PAK I-PAK G S Device Package Marking Remark TMD3N40ZG/TMU3N40ZG D-PAK/I-PAK TMD3N40ZG/TMU3N40ZG Halogen Free

 0.38. Size:399K  trinnotech
 tmt3n40zg.pdf

TMT3N40ZG Features VDSS = 440 V @Tjmax Low gate charge ID = 2A 100% avalanche tested RDS(on) = 3.4 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance D D G S D G S Device Package Marking Remark TMT3N40ZG SOT-223 TMT3N40ZG Halogen Free Absolute Maximum

 0.39. Size:189K  wuxi china
 cs3n40a3h.pdf

Silicon N-Channel Power MOSFET R CS3N40 A3H General Description VDSS 400 V CS3N40 A3H, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.40. Size:926K  cn vbsemi
 fdd3n40tm.pdf

FDD3N40TM www.VBsemi.tw Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 1.8 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to RoHS

 0.41. Size:1060K  cn hmsemi
 hm3n40pr.pdf

HM3N40PR Silicon N-Channel Power MOSFET General Description VDSS 400 V HM3N40PR, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching ci

 0.42. Size:884K  cn hmsemi
 hm3n40r.pdf

HM3N40R Silicon N-Channel Power MOSFET General Description VDSS 400 V HM3N40R, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circ

 0.43. Size:265K  inchange semiconductor
 aod3n40.pdf

isc N-Channel MOSFET Transistor AOD3N40 FEATURES Drain Current I = 2.6A@ T =25 D C Drain Source Voltage- V =400V(Min) DSS Static Drain-Source On-Resistance R =3.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 0.44. Size:320K  inchange semiconductor
 mdis3n40th.pdf

isc N-Channel MOSFET Transistor MDIS3N40TH FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 3.4 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno