3N40 - описание и поиск аналогов

UNISONIC TECHNOLOGIES CO., LTD 3N40 Preliminary Power MOSFET 3 A, 400 V N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-220F The UTC 3N40 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can

isc N-Channel MOSFET Transistor 3N40 FEATURES Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 2.6 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch regulators Switching converters motor drivers and relay drivers

Philips Semiconductors Product specification PowerMOS transistors PHP3N40E, PHB3N40E, PHD3N40E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 2.5 A g Low thermal resistance RDS(ON) 3.5 s GENERAL DESCRIPTION N-ch

Philips Semiconductors Product specification PowerMOS transistors PHP3N40E, PHB3N40E, PHD3N40E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 2.5 A g Low thermal resistance RDS(ON) 3.5 s GENERAL DESCRIPTION N-ch

Philips Semiconductors Product specification PowerMOS transistors PHP13N40E, PHB13N40E, PHW13N40E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 13.7 A g Low thermal resistance RDS(ON) 0.35 s GENERAL DESCRIPTION

Philips Semiconductors Product specification PowerMOS transistors PHX3N40E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 1.7 A g Isolated package RDS(ON) 3.5 s GENERAL DESCRIPTION PINNING SOT186A N-channel, enh

STN3N40K3 N-channel 400 V, 3 , 1.8 A SOT-223 SuperMESH3 Power MOSFET Features Order code VDSS RDS(on) max ID PW STN3N40K3 400 V

STD3N40K3 N-channel 400 V, 2.7 typ., 2 A SuperMESH3 Zener-protected Power MOSFET in a DPAK package Datasheet production data Features Order code VDSS RDS(on) max ID Pw STD3N40K3 400 V

November 2009 TM UniFET FDT3N40 400V N-Channel MOSFET Features Description 2A, 400V, RDS(on) = 3.4 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 4.5 nC) stripe, DMOS technology. Low Crss ( typical 3.7 pF) This advanced technology has been especially tailored to

April 2013 FDT3N40 N-Channel UniFETTM MOSFET 400 V, 2.0 A, 3.4 Features Description RDS(on) = 3.4 (Max.) @ VGS = 10 V, ID = 1.0 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 4.5 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 3.7 pF) pr

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.6A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.2 pF) This advanced technology has bee

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.5A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.2 pF) This advanced technology has been

April 2000 TM QFET QFET QFET QFET FQB3N40 / FQI3N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.5A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.2 pF) This advanced technolog

April 2000 TM QFET QFET QFET QFET FQD3N40 / FQU3N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.0A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.2 pF) This advanced technolog

February 2007 TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description 2A, 400V, RDS(on) = 3.4 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 4.5 nC) stripe, DMOS technology. Low Crss ( typical 3.7 pF) This advanced technology has been especially ta

April 2000 TM QFET QFET QFET QFET FQD3N40 / FQU3N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.0A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.2 pF) This advanced technolog

Advance Technical Information High Voltage VDSS = 4000V IXTF03N400 Power MOSFET ID25 = 300mA RDS(on) 300 ( Electrically Isolated Tab) N-Channel Enhancement Mode ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 4000 V VDGR TJ = 25 C to 150 C, RGS = 1M 4000 V 1 VGSS Continuous 20 V 2 5 Isolated Tab VGSM T

Advance Technical Information High Voltage VDSS = 4000V IXTH03N400 ID25 = 300mA Power MOSFET IXTV03N400S RDS(on) 290 N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 4000 V D D (Tab) S VDGR TJ = 25 C to 150 C, RGS = 1M 4000 V VGSS Continuous 20 V VGSM Transie

NDD03N40Z, NDT03N40Z N-Channel Power MOSFET 400 V, 3.4 W Features 100% Avalanche Tested Extremely High dv/dt Capability http //onsemi.com Gate Charge Minimized Very Low Intrinsic Capacitance V(BR)DSS RDS(ON) MAX Improved Diode Reverse Recovery Characteristics Zener-protected 400 V 3.4 W @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

UNISONIC TECHNOLOGIES CO., LTD 13N40 Preliminary Power MOSFET 13A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N40 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand

KF3N40W SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES VDSS(Min.)= 400V, ID= 2A Drain-Source ON R

KF3N40D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF3N40D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS L avalanche characteristics. It is mainly suitable for LED Lighting and C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 switching mo

AOD3N40 400V,2.6A N-Channel MOSFET General Description Product Summary The AOD3N40 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver VDS 500V@150 high levels of performance and robustness in popular AC- ID (at VGS=10V) 2.6A DC applications. RDS(ON) (at VGS=10V)

AP03N40AH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID 2.7A G RoHS Compliant & Halogen-Free S G D Description TO-252(H) S AP03N40A series are from Advanced Power innovated design and silicon process technolog

AP03N40AJ-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID 2.7A G RoHS Compliant & Halogen-Free S G Description D S The AP03N40A provide high blocking voltage to overcome voltage surge TO-251(J) and sag in the tou

AP03N40AI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID 2.7A G RoHS Compliant & Halogen-Free S Description AP03N40A series are from Advanced Power innovated design and G D silicon process technology to achieve t

AP03N40AP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID 2.7A G RoHS Compliant & Halogen-Free S Description The AP03N40A provide high blocking voltage to overcome voltage surge G TO-220(P) D and sag in the tough

AP03N40J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 3.3 Simple Drive Requirement ID 2.1A G RoHS Compliant & Halogen-Free S G Description D S Advanced Power MOSFETs from APEC provide the designer with TO-251(J) the best combination of fast

AP03N40I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 3.3 Simple Drive Requirement ID 2.1A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz

Silicon N-Channel Power MOSFET R CS3N40 A3H General Description VDSS 400 V CS3N40 A3H, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS3N40 A4H General Description VDSS 400 V CS3N40 A4H, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS3N40 A23 General Description VDSS 400 V CS3N40 A23, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

SMD Type IC SMD Type Transistors SMDType SMDType IC Product specification KQB3N40 TO-263 Unit mm Features 2.5A, 400 V. RDS(ON) =3.4 @VGS =10V 4.57+0.2 -0.2 +0.1 1.27-0.1 Low gate charge (typical 6.0nC) Low Crss(typical 4.2pF) Fast switching 100% avalanche tested +0.1 0.1max 1.27-0.1 lmproved dv/dt capability 0.81+0.1 -0.1 2.54 1gate 1Gate 2.54+0.2 +0.2 -0.2 +0.1 5.

MDD3N40 N-Channel MOSFET 400V, 2.0A, 3.4 General Description Features The MDD3N40 use advanced Magnachip s V = 400V DS MOSFET Technology, which provides low on-state I = 2.0A @V = 10V D GS resistance, high switching performance and RDS(ON) 3.4 @VGS = 10V excellent quality. MDD3N40 are suitable device for SMPS and Applications general purpose appli

MDHT3N40 N-Channel MOSFET 400V, 1.5A, 3.4 General Description Features The MDHT3N40 uses advanced Magnachip s VDS = 400V MOSFET Technology, which provides low on-state @VGS = 10V ID = 1.5A resistance, high switching performance and @VGS = 10V RDS(ON) 3.4 excellent quality. MDHT3N40 is suitable device for SMPS, HID and general purpose applications. Applications

MDIS3N40 N-Channel MOSFET 400V, 2.0A, 3.4 General Description Features The MDIS3N40 uses advanced Magnachip s V = 400V DS MOSFET Technology, which provides low on-state I = 2.0A @V = 10V D GS resistance, high switching performance and excellent RDS(ON) 3.4 @VGS = 10V quality. MDIS3N40 is suitable device for SMPS, HID and general purpose applications

TMD3N40ZG/TMU3N40ZG Features VDSS = 440 V @Tjmax Low gate charge ID = 2A 100% avalanche tested RDS(on) = 3.4 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance D D-PAK I-PAK G S Device Package Marking Remark TMD3N40ZG/TMU3N40ZG D-PAK/I-PAK TMD3N40ZG/TMU3N40ZG Halogen Free

TMT3N40ZG Features VDSS = 440 V @Tjmax Low gate charge ID = 2A 100% avalanche tested RDS(on) = 3.4 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance D D G S D G S Device Package Marking Remark TMT3N40ZG SOT-223 TMT3N40ZG Halogen Free Absolute Maximum

Silicon N-Channel Power MOSFET R CS3N40 A3H General Description VDSS 400 V CS3N40 A3H, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

FDD3N40TM www.VBsemi.tw Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 1.8 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to RoHS

HM3N40PR Silicon N-Channel Power MOSFET General Description VDSS 400 V HM3N40PR, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching ci

HM3N40R Silicon N-Channel Power MOSFET General Description VDSS 400 V HM3N40R, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circ

isc N-Channel MOSFET Transistor AOD3N40 FEATURES Drain Current I = 2.6A@ T =25 D C Drain Source Voltage- V =400V(Min) DSS Static Drain-Source On-Resistance R =3.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

isc N-Channel MOSFET Transistor MDIS3N40TH FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 3.4 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno