7N40 Datasheet. Equivalente

 ..1. Size:170K  utc
 7n40.pdf

UNISONIC TECHNOLOGIES CO., LTD 7N40 Preliminary Power MOSFET 7 Amps, 400 Volts N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 7N40 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It 1

 0.1. Size:60K  philips
 phx7n40e 3.pdf

Philips Semiconductors Product specification PowerMOS transistors PHX7N40E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 3.8 A g Isolated package RDS(ON) 1 s GENERAL DESCRIPTION PINNING SOT186A N-channel, enhan

 0.2. Size:723K  fairchild semi
 fqpf17n40t.pdf

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.5A, 400V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has bee

 0.3. Size:752K  fairchild semi
 fqp7n40.pdf

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 7A, 400V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16.5 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has been e

 0.4. Size:728K  fairchild semi
 fqpf17n40.pdf

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.5A, 400V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has bee

 0.5. Size:746K  fairchild semi
 fqa17n40.pdf

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 17.2A, 400V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has bee

 0.6. Size:702K  fairchild semi
 fqaf17n40.pdf

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 12.2A, 400V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has be

 0.7. Size:782K  fairchild semi
 fqpf7n40.pdf

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.6A, 400V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16.5 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has bee

 0.8. Size:728K  fairchild semi
 fqp17n40.pdf

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16A, 400V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been

 0.9. Size:1044K  onsemi
 fqpf17n40.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.10. Size:1481K  cn scilicon
 sfp040n40c2 sfb037n40c2.pdf

SFP040N40C2, SFB037N40C2 N-MOSFET 40V, 2.4m , 200A Features Product Summary Extremely low on-resistance RDS(on) VDS 40V Excellent QgxRDS(on) product(FOM) RDS(on) 2.4m Qualified according to JEDEC criteria ID 200A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies) SFP040