7N40 PDF and Equivalents Search

 

7N40 Specs and Replacement

Type Designator: 7N40

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 98 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 105 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO-220 TO-220F1

7N40 substitution

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7N40 datasheet

 ..1. Size:170K  utc
7n40.pdf pdf_icon

7N40

UNISONIC TECHNOLOGIES CO., LTD 7N40 Preliminary Power MOSFET 7 Amps, 400 Volts N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 7N40 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It 1 ... See More ⇒

 0.1. Size:60K  philips
phx7n40e 3.pdf pdf_icon

7N40

Philips Semiconductors Product specification PowerMOS transistors PHX7N40E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 3.8 A g Isolated package RDS(ON) 1 s GENERAL DESCRIPTION PINNING SOT186A N-channel, enhan... See More ⇒

 0.2. Size:723K  fairchild semi
fqpf17n40t.pdf pdf_icon

7N40

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.5A, 400V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has bee... See More ⇒

 0.3. Size:752K  fairchild semi
fqp7n40.pdf pdf_icon

7N40

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 7A, 400V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16.5 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has been e... See More ⇒

Detailed specifications: 7N50 , 8N50 , 1N40 , 2N40 , 3N40 , 4N40 , 5N40 , 6N40 , IRF530 , 8N40 , 9N40 , 10N40 , 11N40 , 12N40 , 13N40 , 15N40 , 18N40 .

Keywords - 7N40 MOSFET specs

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