10N40 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 10N40
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 135 W
Tensión drenaje-fuente (Vds): 400 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 10.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 89 nS
Conductancia de drenaje-sustrato (Cd): 250 pF
Resistencia drenaje-fuente RDS(on): 0.5 Ohm
Empaquetado / Estuche: TO-220, TO-220F1
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10N40 Datasheet (PDF)
1.1. mtp10n40e.pdf 
Size:151K _motorola
M O T O R O L A O r d e r t h i s d o c u m e n t S E M I C O N D U C T O R T E C H N I C A L D A T A b y M T P 1 0 N 4 0 E / D D e s i g n e r ' s D a t a S h e e t M T P 1 0 N 4 0 E T M O S E - F E T . H i g h E n e r g y P o w e r F E T N C h a n n e l E n h a n c e m e n t M o d e S i l i c o n G a t e T M O S P O W E
1.2. mtw10n40e.pdf Size:74K _motorola
1.3. mtb10n40e.pdf Size:234K _motorola
M O T O R O L A O r d e r t h i s d o c u m e n t S E M I C O N D U C T O R T E C H N I C A L D A T A b y M T B 1 0 N 4 0 E / D D e s i g n e r ' s D a t a S h e e t M T B 1 0 N 4 0 E T M O S E - F E T . M o t o r o l a P r e f e r r e d D e v i c e H i g h E n e r g y P o w e r F E T D 2 P A K f o r S u r f a c e M o u n t
1.4. mtp10n40erev0x.pdf Size:249K _motorola
M O T O R O L A O r d e r t h i s d o c u m e n t S E M I C O N D U C T O R T E C H N I C A L D A T A b y M T P 1 0 N 4 0 E / D D e s i g n e r ' s D a t a S h e e t M T P 1 0 N 4 0 E T M O S E - F E T . H i g h E n e r g y P o w e r F E T N C h a n n e l E n h a n c e m e n t M o d e S i l i c o n G a t e T M O S P O W E
1.5. mtb10n40erev0x.pdf Size:273K _motorola
M O T O R O L A O r d e r t h i s d o c u m e n t S E M I C O N D U C T O R T E C H N I C A L D A T A b y M T B 1 0 N 4 0 E / D D e s i g n e r ' s D a t a S h e e t M T B 1 0 N 4 0 E T M O S E - F E T . M o t o r o l a P r e f e r r e d D e v i c e H i g h E n e r g y P o w e r F E T D 2 P A K f o r S u r f a c e M o u n t
1.6. php10n40 1.pdf Size:53K _philips
Philips Semiconductors Product specification PowerMOS transistor PHP10N40 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 400 V avalanche energy capability, stable ID Drain current (DC) 10.7 A blocking voltage, fast switching and Ptot Total power di
1.7. mtp10n35 mtp10n40.pdf Size:79K _njs
1.8. sihf10n40d.pdf Size:168K _vishay
SiHF10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS (V) at TJ max. 450 - Low Area Specific On-Resistance RDS(on) max. at 25 °C () VGS = 10 V 0.6 - Low Input Capacitance (Ciss) Qg max. (nC) 30 - Reduced Capacitive Switching Losses Qgs (nC) 4 - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) Qgd (nC) 7 •
1.9. sihb10n40d.pdf Size:144K _vishay
SiHB10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS (V) at TJ max. 450 - Low Area Specific On-Resistance RDS(on) max. at 25 °C () VGS = 10 V 0.6 - Low Input Capacitance (Ciss) Qg max. (nC) 30 - Reduced Capacitive Switching Losses Qgs (nC) 4 - High Body Diode Ruggedness Qgd (nC) 7 - Avalanche Energy Rated (UIS) Con
1.10. sihp10n40d.pdf Size:211K _vishay
SiHP10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS (V) at TJ max. 450 - Low Area Specific On-Resistance RDS(on) max. at 25 °C () VGS = 10 V 0.6 - Low Input Capacitance (Ciss) Qg max. (nC) 30 - Reduced Capacitive Switching Losses Qgs (nC) 4 - High Body Diode Ruggedness Qgd (nC) 7 - Avalanche Energy Rated (UIS) Con
1.11. 10n40.pdf Size:170K _utc
UNISONIC TECHNOLOGIES CO., LTD 10N40 Preliminary Power MOSFET 10.5 Amps, 400 Volts N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 10N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. I
1.12. hgtp10n40c1d hgtp10n40e1d hgtp10n50c1d hgtp10n50e1d.pdf Size:47K _harris_semi
HGTP10N40C1D, HGTP10N40E1D, S E M I C O N D U C T O R HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB • 10A, 400V and 500V • VCE(ON): 2.5V Max. EMITTER COLLECTOR • TFALL: 1µs, 0.5µs GATE • Low On-State Voltage COLLECTOR • Fast Switching Speeds (FLANGE) • High Input Impeda
1.13. hgtp10n40f.pdf Size:43K _harris_semi
HGTP10N40F1D, S E M I C O N D U C T O R HGTP10N50F1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB • 10A, 400V and 500V • Latch Free Operation EMITTER • Typical Fall Time < 1.4µs COLLECTOR GATE • High Input Impedance • Low Conduction Loss COLLECTOR (FLANGE) • Anti-Parallel Diode • tRR < 60ns Des
1.14. ftp10n40 fta10n40.pdf Size:425K _ark-micro
FTP10N40/FTA10N40 400V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features Low ON Resistance 400V 0.50Ω 10A Low Gate Charge (typical 34nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free Applications High Efficiency SMPS Adaptor/Charger LCD Panel Power Switching application Ordering Information Part Number Package Marking F
1.15. sif10n40c.pdf Size:375K _sisemi
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET SIF10N40C N- MOS / N-CHANNEL POWER MOSFET SIF10N40C
1.16. mtn10n40e3.pdf Size:236K _cystek
Spec. No. : C586E3 Issued Date : 2011.04.18 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS : 400V RDS(ON) : 0.47Ω(typ.) MTN10N40E3 ID : 10A Description The MTN10N40E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance
1.17. cm10n40.pdf Size:119K _jdsemi
R C1N0 M04 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆400V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1 ．主要用途 主要用于电子镇流器、节能灯 等功率开关电路 2 ．主要特点 开关速度快 驱动简单，可并联使用 3 ．封装外形 TO-2
1.18. msf10n40.pdf Size:1096K _bruckewell
MSF10N40 400V N-Channel MOSFET Description The MSF10N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Originative New Design • Very Low Intri
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