10N40 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 10N40 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 135 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 89 nS
Cossⓘ - Capacitancia de salida: 250 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
Encapsulados: TO-220
TO-220F1
📄📄 Copiar
Búsqueda de reemplazo de 10N40 MOSFET
- Selecciónⓘ de transistores por parámetros
10N40 datasheet
..1. Size:170K utc
10n40.pdf 
UNISONIC TECHNOLOGIES CO., LTD 10N40 Preliminary Power MOSFET 10.5 Amps, 400 Volts N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 10N40 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. I
0.3. Size:49K 1
hgth12n40c1 hgth12n40e1 hgth12n50c1 hgth12n50e1 hgtp10n40c1 hgtp10n40e1 hgtp10n50c1 hgtp10n50e1.pdf
HGTP10N40C1, 40E1, 50C1, 50E1, S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E1 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC 10A and 12A, 400V and 500V EMITTER VCE(ON) 2.5V Max. COLLECTOR TFI 1 s, 0.5 s GATE COLLECTOR (FLANGE) Low On-State Voltage Fast Switching Speeds High Input Impedance
0.4. Size:40K 1
hgtd10n40f1 hgtd10n40f1s hgtd10n50f1 hgtd10n50f1s.pdf
HGTD10N40F1, HGTD10N40F1S, S E M I C O N D U C T O R HGTD10N50F1, HGTD10N50F1S 10A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTD10N40F1, HGTD10N50F1 10A, 400V and 500V JEDEC TO-251AA VCE(ON) 2.5V Max. EMITTER TFALL 1.4 s COLLECTOR GATE Low On-State Voltage Fast Switching Speeds COLLECTOR (FLANGE) High Input Impedance Applications
0.5. Size:273K motorola
mtb10n40erev0x.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB10N40E/D Designer's Data Sheet MTB10N40E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 10 AMPERES 400 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.55 OHM than any existing surface m
0.6. Size:249K motorola
mtp10n40erev0x.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N40E/D Designer's Data Sheet MTP10N40E TMOS E-FET. High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 10 AMPERES withstand high energy in the avalanche mode and switch efficiently. 400 VOLTS This new high energy device also of
0.8. Size:234K motorola
mtb10n40e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB10N40E/D Designer's Data Sheet MTB10N40E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 10 AMPERES 400 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.55 OHM than any existing surface m
0.9. Size:151K motorola
mtp10n40e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N40E/D Designer's Data Sheet MTP10N40E TMOS E-FET. High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 10 AMPERES withstand high energy in the avalanche mode and switch efficiently. 400 VOLTS This new high energy device also of
0.10. Size:53K philips
php10n40 1.pdf
Philips Semiconductors Product specification PowerMOS transistor PHP10N40 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 400 V avalanche energy capability, stable ID Drain current (DC) 10.7 A blocking voltage, fast switching and Ptot Total power di
0.12. Size:144K vishay
sihb10n40d.pdf
SiHB10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 450 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.6 - Low Input Capacitance (Ciss) Qg max. (nC) 30 - Reduced Capacitive Switching Losses Qgs (nC) 4 - High Body Diode Ruggedness Qgd (nC) 7 - Avalanche Energy Rated (UIS) Con
0.13. Size:168K vishay
sihf10n40d.pdf
SiHF10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 450 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.6 - Low Input Capacitance (Ciss) Qg max. (nC) 30 - Reduced Capacitive Switching Losses Qgs (nC) 4 - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) Qgd (nC) 7
0.14. Size:211K vishay
sihp10n40d.pdf
SiHP10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 450 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.6 - Low Input Capacitance (Ciss) Qg max. (nC) 30 - Reduced Capacitive Switching Losses Qgs (nC) 4 - High Body Diode Ruggedness Qgd (nC) 7 - Avalanche Energy Rated (UIS) Con
0.15. Size:47K harris semi
hgtp10n40c1d hgtp10n40e1d hgtp10n50c1d hgtp10n50e1d.pdf
HGTP10N40C1D, HGTP10N40E1D, S E M I C O N D U C T O R HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB 10A, 400V and 500V VCE(ON) 2.5V Max. EMITTER COLLECTOR TFALL 1 s, 0.5 s GATE Low On-State Voltage COLLECTOR Fast Switching Speeds (FLANGE) High Input Impeda
0.16. Size:43K harris semi
hgtp10n40f.pdf
HGTP10N40F1D, S E M I C O N D U C T O R HGTP10N50F1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB 10A, 400V and 500V Latch Free Operation EMITTER Typical Fall Time
0.17. Size:425K ark-micro
ftp10n40 fta10n40.pdf
FTP10N40/FTA10N40 400V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features Low ON Resistance 400V 0.50 10A Low Gate Charge (typical 34nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free Applications High Efficiency SMPS Adaptor/Charger LCD Panel Power Switching application Ordering Information Part Number Package Marking F
0.18. Size:375K sisemi
sif10n40c.pdf
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF10N40C N- MOS / N-CHANNEL POWER MOSFET SIF10N40C
0.19. Size:236K cystek
mtn10n40e3.pdf
Spec. No. C586E3 Issued Date 2011.04.18 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 400V RDS(ON) 0.47 (typ.) MTN10N40E3 ID 10A Description The MTN10N40E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance
0.20. Size:119K jdsemi
cm10n40.pdf
R C1N0 M04 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 400V N-Channel VDMOS RoHS 1 2 3 TO-2
0.21. Size:1096K bruckewell
msf10n40.pdf
MSF10N40 400V N-Channel MOSFET Description The MSF10N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intri
0.22. Size:1123K belling
bl10n40-p bl10n40-a bl10n40-u bl10n40-d.pdf
BL10N40 Power MOSFET 1 Description Step-Down Converter BL10N40, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa
0.23. Size:827K pipsemi
ptp10n40b pta10n40b.pdf
PTP10N40B PTA10N40B 400V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 400V 0.45 10A RDS(ON),typ.=0.45 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Ballast and Lighting DC-AC Inverter G D S G D Other Applications S Ordering Information TO-220 TO-220F Part Number
0.24. Size:1934K winsok
wsf10n40.pdf
WSF10N40 N-Ch MOSFET General Description Product Summery The WSF10N40 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 400V 515m 10A gate charge for most of the synchronous buck converter applications . Applications DC-DC & DC-AC Converters for telecom, industrial and consumer environment
Otros transistores... 2N40, 3N40, 4N40, 5N40, 6N40, 7N40, 8N40, 9N40, AON7506, 11N40, 12N40, 13N40, 15N40, 18N40, 20N40, 25N40, UF730
