UNISONIC TECHNOLOGIES CO., LTD 10N40 Preliminary Power MOSFET 10.5 Amps, 400 Volts N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The UTC 10N40 is an N-channel mode power MOSFET usingUTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. I

HGTP10N40C1, 40E1, 50C1, 50E1,S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E110A, 12A,400V and 500V N-Channel IGBTsApril 1995Features PackagesHGTH-TYPES JEDEC TO-218AC 10A and 12A, 400V and 500VEMITTER VCE(ON): 2.5V Max.COLLECTOR TFI: 1s, 0.5sGATECOLLECTOR(FLANGE) Low On-State Voltage Fast Switching Speeds High Input Impedance

HGTD10N40F1, HGTD10N40F1S,S E M I C O N D U C T O RHGTD10N50F1, HGTD10N50F1S10A, 400V and 500V N-Channel IGBTsApril 1995Features PackagesHGTD10N40F1, HGTD10N50F1 10A, 400V and 500VJEDEC TO-251AA VCE(ON) 2.5V Max.EMITTER TFALL 1.4sCOLLECTORGATE Low On-State Voltage Fast Switching SpeedsCOLLECTOR(FLANGE) High Input ImpedanceApplications

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB10N40E/DDesigner's Data SheetMTB10N40ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 10 AMPERES400 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.55 OHMthan any existing surface m

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP10N40E/DDesigner's Data SheetMTP10N40ETMOS E-FET.High Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to10 AMPERESwithstand high energy in the avalanche mode and switch efficiently.400 VOLTSThis new high energy device also of

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB10N40E/DDesigner's Data SheetMTB10N40ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 10 AMPERES400 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.55 OHMthan any existing surface m

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP10N40E/DDesigner's Data SheetMTP10N40ETMOS E-FET.High Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to10 AMPERESwithstand high energy in the avalanche mode and switch efficiently.400 VOLTSThis new high energy device also of

Philips Semiconductors Product specification PowerMOS transistor PHP10N40 GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 400 Vavalanche energy capability, stable ID Drain current (DC) 10.7 Ablocking voltage, fast switching and Ptot Total power di

SiHB10N40Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 450- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.6- Low Input Capacitance (Ciss)Qg max. (nC) 30- Reduced Capacitive Switching LossesQgs (nC) 4- High Body Diode RuggednessQgd (nC) 7- Avalanche Energy Rated (UIS)Con

SiHF10N40Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 450- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.6- Low Input Capacitance (Ciss)Qg max. (nC) 30- Reduced Capacitive Switching LossesQgs (nC) 4 - High Body Diode Ruggedness- Avalanche Energy Rated (UIS)Qgd (nC) 7

SiHP10N40Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 450- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.6- Low Input Capacitance (Ciss)Qg max. (nC) 30- Reduced Capacitive Switching LossesQgs (nC) 4- High Body Diode RuggednessQgd (nC) 7- Avalanche Energy Rated (UIS)Con

HGTP10N40C1D, HGTP10N40E1D,S E M I C O N D U C T O RHGTP10N50C1D, HGTP10N50E1D10A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-220AB 10A, 400V and 500V VCE(ON): 2.5V Max.EMITTERCOLLECTOR TFALL: 1s, 0.5sGATE Low On-State VoltageCOLLECTOR Fast Switching Speeds(FLANGE) High Input Impeda

HGTP10N40F1D,S E M I C O N D U C T O RHGTP10N50F1D10A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-220AB 10A, 400V and 500V Latch Free OperationEMITTER Typical Fall Time

FTP10N40/FTA10N40400V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features Low ON Resistance 400V 0.50 10A Low Gate Charge (typical 34nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free Applications High Efficiency SMPS Adaptor/Charger LCD Panel Power Switching application Ordering Information Part Number Package Marking F

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF10N40CN- MOS / N-CHANNEL POWER MOSFET SIF10N40C

Spec. No. : C586E3 Issued Date : 2011.04.18 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 400V RDS(ON) : 0.47(typ.) MTN10N40E3 ID : 10A Description The MTN10N40E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

RC1N0M04 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 400V N-Channel VDMOS RoHS 12 3TO-2

MSF10N40 400V N-Channel MOSFET Description The MSF10N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intri

BL10N40 Power MOSFET 1Description Step-Down Converter BL10N40, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

PTP10N40B PTA10N40B 400V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 400V 0.45 10A RDS(ON),typ.=0.45 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Ballast and Lighting DC-AC Inverter G D S G D Other Applications S Ordering Information TO-220 TO-220F Part Number

WSF10N40 N-Ch MOSFETGeneral Description Product SummeryThe WSF10N40 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 400V 515m 10Agate charge for most of the synchronous buck converter applications . Applications DC-DC & DC-AC Converters for telecom,industrial and consumer environment