18N40 Datasheet. Equivalente

 ..1. Size:149K  utc
 18n40.pdf

UNISONIC TECHNOLOGIES CO., LTD 18N40 Power MOSFET 18A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 18N40 is a 400V N-channel power MOSFET, providing customers with perfect RDS(ON), low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in PWM applications. FEATURES * VDS = 400V * ID = 18A * RDS(ON)

 0.1. Size:126K  1
 ngd18n40clb.pdf

NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped http //onsemi.com protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS, 400 VOLTS high curren

 0.2. Size:87K  1
 ngb18n40clb.pdf

NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped http //onsemi.com protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS, 400 VOLTS high current swit

 0.3. Size:888K  st
 stgd18n40lz.pdf

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features AEC Q101 compliant 3 3 2 180 mJ of avalanche energy @ TC = 150 C, 1 1 L = 3 mH DPAK IPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 2 1 Low saturation voltage TO-220 3 1 High pulsed current capability 3

 0.4. Size:888K  st
 stgb18n40lz.pdf

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features AEC Q101 compliant 3 3 2 180 mJ of avalanche energy @ TC = 150 C, 1 1 L = 3 mH DPAK IPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 2 1 Low saturation voltage TO-220 3 1 High pulsed current capability 3

 0.5. Size:890K  st
 stgb18n40lz stgd18n40lz stgp18n40lz.pdf

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features AEC Q101 compliant 3 3 2 180 mJ of avalanche energy @ TC = 150 C, 1 1 L = 3 mH DPAK IPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 2 1 Low saturation voltage TO-220 3 1 High pulsed current capability 3

 0.6. Size:888K  st
 stgp18n40lz.pdf

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features AEC Q101 compliant 3 3 2 180 mJ of avalanche energy @ TC = 150 C, 1 1 L = 3 mH DPAK IPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 2 1 Low saturation voltage TO-220 3 1 High pulsed current capability 3

 0.7. Size:887K  st
 stgb18n40lzt4 stgd18n40lz stgp18n40lz.pdf

STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production data Features TAB TAB Designed for automotive applications and 3 AEC-Q101 qualified 3 1 2 1 180 mJ of avalanche energy @ TC = 150 C, DPAK L = 3 mH IPAK ESD gate-emitter protection TAB Gate-collector high voltage clamping TAB

 0.8. Size:888K  st
 stgb18n40lzt4.pdf

STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production data Features TAB TAB Designed for automotive applications and 3 AEC-Q101 qualified 3 1 2 1 180 mJ of avalanche energy @ TC = 150 C, DPAK L = 3 mH IPAK ESD gate-emitter protection TAB Gate-collector high voltage clamping TAB

 0.9. Size:125K  onsemi
 ngb18n40a.pdf

NGB18N40CLB, NGB18N40ACLB Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK http //onsemi.com This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped 18 AMPS, 400 VOLTS protection for use in inductive coil drivers applications. Primary uses VCE(on) 3 2.0 V @ include Ignition, Direct Fuel Injection, or wherever hi

 0.10. Size:126K  onsemi
 ngd18n40a.pdf

NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped http //onsemi.com protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS, 400 VOLTS high curren

 0.11. Size:376K  taitron
 msu18n40.pdf

400V/18A POWER MOSFET (N-Channel) MSU18N40T 400V/18A Power MOSFET (N-Channel) General Description MSU18N40T is a N-Channel enhancement mode power MOSFET with advanced technology. It is designed to have Better characteristics, such as fast switching time, low gate TO-220 charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commu

 0.12. Size:1112K  cn hmsemi
 hm18n40 hm18n40f hm18n40a.pdf

HM18N40 / HM18N40F / HM18N40A 400V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 18A, 400V, RDS(on) typ. = 0.20 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 50nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast