18N40 Todos los transistores

 

18N40 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 18N40

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 360 W

Tensión drenaje-fuente (Vds): 400 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 18 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 22 nS

Conductancia de drenaje-sustrato (Cd): 280 pF

Resistencia drenaje-fuente RDS(on): 0.18 Ohm

Empaquetado / Estuche: TO-247, TO-220, TO-220F1

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18N40 Datasheet (PDF)

1.1. stgb18n40lz stgd18n40lz stgp18n40lz.pdf Size:890K _st

18N40
18N40

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features ■ AEC Q101 compliant 3 3 2 ■ 180 mJ of avalanche energy @ TC = 150 °C, 1 1 L = 3 mH DPAK IPAK ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping 3 ■ Logic level gate drive 2 1 ■ Low saturation voltage TO-220 3 1 ■ High pulsed current capability 3

1.2. stgb18n40lz.pdf Size:888K _st

18N40
18N40

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features ■ AEC Q101 compliant 3 3 2 ■ 180 mJ of avalanche energy @ TC = 150 °C, 1 1 L = 3 mH DPAK IPAK ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping 3 ■ Logic level gate drive 2 1 ■ Low saturation voltage TO-220 3 1 ■ High pulsed current capability 3

 1.3. stgp18n40lz.pdf Size:888K _st

18N40
18N40

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features ■ AEC Q101 compliant 3 3 2 ■ 180 mJ of avalanche energy @ TC = 150 °C, 1 1 L = 3 mH DPAK IPAK ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping 3 ■ Logic level gate drive 2 1 ■ Low saturation voltage TO-220 3 1 ■ High pulsed current capability 3

1.4. stgb18n40lzt4.pdf Size:888K _st

18N40
18N40

STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production data Features TAB TAB • Designed for automotive applications and 3 AEC-Q101 qualified 3 1 2 1 • 180 mJ of avalanche energy @ TC = 150 °C, DPAK L = 3 mH IPAK • ESD gate-emitter protection TAB • Gate-collector high voltage clamping TAB •

 1.5. stgd18n40lz.pdf Size:888K _st

18N40
18N40

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features ■ AEC Q101 compliant 3 3 2 ■ 180 mJ of avalanche energy @ TC = 150 °C, 1 1 L = 3 mH DPAK IPAK ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping 3 ■ Logic level gate drive 2 1 ■ Low saturation voltage TO-220 3 1 ■ High pulsed current capability 3

1.6. ngd18n40a.pdf Size:126K _onsemi

18N40
18N40

NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped http://onsemi.com protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS, 400 VOLTS high curren

1.7. ngb18n40a.pdf Size:125K _onsemi

18N40
18N40

NGB18N40CLB, NGB18N40ACLB Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped 18 AMPS, 400 VOLTS protection for use in inductive coil drivers applications. Primary uses VCE(on) 3 2.0 V @ include Ignition, Direct Fuel Injection, or wherever hi

1.8. 18n40.pdf Size:149K _utc

18N40
18N40

UNISONIC TECHNOLOGIES CO., LTD 18N40 Power MOSFET 18A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 18N40 is a 400V N-channel power MOSFET, providing customers with perfect RDS(ON), low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in PWM applications. FEATURES * VDS = 400V * ID = 18A * RDS(ON) ≤

1.9. msu18n40.pdf Size:376K _taitron

18N40
18N40

400V/18A POWER MOSFET (N-Channel) MSU18N40T 400V/18A Power MOSFET (N-Channel) General Description  MSU18N40T is a N-Channel enhancement mode power MOSFET with advanced technology. It is designed to have Better characteristics, such as fast switching time, low gate TO-220 charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commu

Otros transistores... 7N40 , 8N40 , 9N40 , 10N40 , 11N40 , 12N40 , 13N40 , 15N40 , IRFB4227 , 20N40 , 25N40 , UF730 , UF740 , UF3N25 , UF634 , 12N25 , 15N25 .

 

 
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