All MOSFET. 18N40 Datasheet

 

18N40 MOSFET. Datasheet pdf. Equivalent

Type Designator: 18N40

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 360 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 22 nS

Drain-Source Capacitance (Cd): 280 pF

Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm

Package: TO-247_TO-220_TO-220F1

18N40 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

18N40 Datasheet (PDF)

1.1. msu18n40.pdf Size:376K _upd-mosfet

18N40
18N40

400V/18A POWER MOSFET (N-Channel) MSU18N40T 400V/18A Power MOSFET (N-Channel) General Description  MSU18N40T is a N-Channel enhancement mode power MOSFET with advanced technology. It is designed to have Better characteristics, such as fast switching time, low gate TO-220 charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commu

1.2. stgb18n40lz stgd18n40lz stgp18n40lz.pdf Size:890K _st

18N40
18N40

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features AEC Q101 compliant 3 3 2 180 mJ of avalanche energy @ TC = 150 C, 1 1 L = 3 mH DPAK IPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 2 1 Low saturation voltage TO-220 3 1 High pulsed current capability 3 2 1 D?PAK G

 1.3. 18n40.pdf Size:149K _utc

18N40
18N40

UNISONIC TECHNOLOGIES CO., LTD 18N40 Power MOSFET 18A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 18N40 is a 400V N-channel power MOSFET, providing customers with perfect RDS(ON), low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in PWM applications. FEATURES * VDS = 400V * ID = 18A * RDS(ON) ? 200m?

1.4. stgd18n40lz.pdf Size:888K _igbt

18N40
18N40

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features ■ AEC Q101 compliant 3 3 2 ■ 180 mJ of avalanche energy @ TC = 150 °C, 1 1 L = 3 mH DPAK IPAK ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping 3 ■ Logic level gate drive 2 1 ■ Low saturation voltage TO-220 3 1 ■ High pulsed current capability 3

 1.5. ngb18n40a.pdf Size:125K _igbt

18N40
18N40

NGB18N40CLB, NGB18N40ACLB Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped 18 AMPS, 400 VOLTS protection for use in inductive coil drivers applications. Primary uses VCE(on) 3 2.0 V @ include Ignition, Direct Fuel Injection, or wherever hi

1.6. stgb18n40lzt4.pdf Size:888K _igbt

18N40
18N40

STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production data Features TAB TAB • Designed for automotive applications and 3 AEC-Q101 qualified 3 1 2 1 • 180 mJ of avalanche energy @ TC = 150 °C, DPAK L = 3 mH IPAK • ESD gate-emitter protection TAB • Gate-collector high voltage clamping TAB •

1.7. stgb18n40lz.pdf Size:888K _igbt

18N40
18N40

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features ■ AEC Q101 compliant 3 3 2 ■ 180 mJ of avalanche energy @ TC = 150 °C, 1 1 L = 3 mH DPAK IPAK ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping 3 ■ Logic level gate drive 2 1 ■ Low saturation voltage TO-220 3 1 ■ High pulsed current capability 3

1.8. stgp18n40lz.pdf Size:888K _igbt

18N40
18N40

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features ■ AEC Q101 compliant 3 3 2 ■ 180 mJ of avalanche energy @ TC = 150 °C, 1 1 L = 3 mH DPAK IPAK ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping 3 ■ Logic level gate drive 2 1 ■ Low saturation voltage TO-220 3 1 ■ High pulsed current capability 3

1.9. ngd18n40a.pdf Size:126K _igbt

18N40
18N40

NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped http://onsemi.com protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS, 400 VOLTS high curren

Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .

 
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