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20N40 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 20N40

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 235 W

Tensión drenaje-fuente (Vds): 400 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 23 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 92 nS

Conductancia de drenaje-sustrato (Cd): 370 pF

Resistencia drenaje-fuente RDS(on): 0.15 Ohm

Empaquetado / Estuche: TO-247

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20N40 Datasheet (PDF)

1.1. fqa20n40.pdf Size:712K _upd-mosfet

20N40
20N40

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 19.5A, 400V, RDS(on) = 0.22Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 60 nC) planar stripe, DMOS technology. • Low Crss ( typical 45 pF) This advanced technology has bee

1.2. mtu20n40erev1.pdf Size:157K _motorola

20N40
20N40

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTU20N40E/D Designer's Data Sheet MTU20N40E TMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate T

 1.3. mgp20n40cl.pdf Size:138K _motorola

20N40
20N40

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N40CL/D Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insu

1.4. mtu20n40e.pdf Size:162K _motorola

20N40
20N40

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTU20N40E/D Designer's Data Sheet MTU20N40E TMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate T

 1.5. mgp20n40clrev1.pdf Size:133K _motorola

20N40
20N40

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N40CL/D Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insu

1.6. fqa20n40.pdf Size:712K _fairchild_semi

20N40
20N40

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 19.5A, 400V, RDS(on) = 0.22Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 60 nC) planar stripe, DMOS technology. • Low Crss ( typical 45 pF) This advanced technology has bee

1.7. fdbl0120n40.pdf Size:488K _fairchild_semi

20N40
20N40

November 2014 FDBL0120N40 N-Channel PowerTrench® MOSFET 40 V, 240 A, 1.2 mΩ Features Typical RDS(on) = 0.9 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 90 nC at VGS = 10V, ID = 80 A UIS Capability D RoHS Compliant Applications Industrial Motor Drive G Industrial Power Supply Industrial Automation Battery Operated tools S Battery Protection For current package 

1.8. sgr20n40l.pdf Size:174K _samsung

20N40
20N40

Preliminary N-CHANNEL IGBT SGR20N40L / SGU20N40L D-PAK I-PAK FEATURES * High Input Impedance * High Peak Current Capability (150A) * Easy Gate Drive APPLICATIONS C *Strobe Flash G E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 450 V Collector-Emitter Voltage VGES 6 V Gate-Emitter Voltage ICM (1) 150 A Pulsed Collector Current PC 45 W Maximum Power

1.9. 20n40.pdf Size:195K _utc

20N40
20N40

UNISONIC TECHNOLOGIES CO., LTD 20N40 Preliminary Power MOSFET 400V, 23A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse

1.10. aotf20n40.pdf Size:331K _aosemi

20N40
20N40

AOTF20N40 400V,20A N-Channel MOSFET General Description Product Summary VDS 500@150℃ The AOTF20N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.25Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

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