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UNISONIC TECHNOLOGIES CO., LTD 20N40 Preliminary Power MOSFET 400V, 23A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N40 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse

August 2001 IGBT SGR20N40L / SGU20N40L General Description Features Insulated Gate Bipolar Transistors (IGBTs) with a trench High input impedance gate structure provide superior conduction and switching High peak current capability (150A) performance in comparison with transistors having a planar Easy gate drive gate structure. They also have wide noise immunity. These

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N40CL/D Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insulated Gate Bipolar Transistor (IGBT) VOLTAGE CLAMPED features Gate Emitter ESD protection, Gate Collector overvoltage N CHANNEL IGBT protection from SMARTDISCRETES monolithic circuitr

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTU20N40E/D Designer's Data Sheet MTU20N40E TMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 20 AMPERES scheme to provide enhanced voltage blocking capability without 400 VOLTS degrading performance over time

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTU20N40E/D Designer's Data Sheet MTU20N40E TMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 20 AMPERES scheme to provide enhanced voltage blocking capability without 400 VOLTS degrading performance over time

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N40CL/D Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insulated Gate Bipolar Transistor (IGBT) VOLTAGE CLAMPED features Gate Emitter ESD protection, Gate Collector overvoltage N CHANNEL IGBT protection from SMARTDISCRETES monolithic circuitr

November 2014 FDBL0120N40 N-Channel PowerTrench MOSFET 40 V, 240 A, 1.2 m Features Typical RDS(on) = 0.9 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 90 nC at VGS = 10V, ID = 80 A UIS Capability D RoHS Compliant Applications Industrial Motor Drive G Industrial Power Supply Industrial Automation Battery Operated tools S Battery Protection For current package

October 2002 FDH20N40 / FDP20N40 20A, 400V, 0.216 Ohm, N-Channel SMPS Power MOSFET Applications Features Low Gate Charge Qg results in Simple Drive Switch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward Converter Ruggedness Single Switch Forward Converter Reduced rDS(ON) Flyb

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 19.5A, 400V, RDS(on) = 0.22 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has bee

Preliminary N-CHANNEL IGBT SGR20N40L / SGU20N40L D-PAK I-PAK FEATURES * High Input Impedance * High Peak Current Capability (150A) * Easy Gate Drive APPLICATIONS C *Strobe Flash G E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 450 V Collector-Emitter Voltage VGES 6 V Gate-Emitter Voltage ICM (1) 150 A Pulsed Collector Current PC 45 W Maximum Power

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

AOTF20N40 400V,20A N-Channel MOSFET General Description Product Summary VDS 500@150 The AOTF20N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

BR20N40 Rev.C Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features dv/dt Low gate charge, Fast switching capability, Avalanche energy specified, Improved dv/dt capability. / Applications

N N-CHANNEL MOSFET FHP20N40A MAIN CHARACTERISTICS FEATURES ID 20A Low gate charge VDSS 400V Crss ( 12.3pF) Low Crss (typical 12.3pF ) Rdson-typ @Vgs=10V 0.23 Fast switching Qg-typ 42nC 100% 100% avalanche tested dv/dt Improved

PTP20N40B PTA20N40B 400V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 400V 0.24 20A RDS(ON),typ.=0.24 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger SMPS Power Supply G D S G D LCD Panel Power S Ordering Information TO-220 TO-220F Part Number P

Description MP20N40, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 400 V DS I 20 A D R 0.22 DS(ON).Typ

isc N-Channel MOSFET Transistor AOTF20N40 FEATURES Drain Current I =20A@ T =25 D C Drain Source Voltage- V =400V(Min) DSS Static Drain-Source On-Resistance R =0.25 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

isc N-Channel MOSFET Transistor FDH20N40 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =400V(Min) DSS Static Drain-Source On-Resistance R = 0.216 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp