20N40 MOSFET. Datasheet pdf. Equivalent
Type Designator: 20N40
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 235 W
Maximum Drain-Source Voltage |Vds|: 400 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 23 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 92 nS
Drain-Source Capacitance (Cd): 370 pF
Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm
Package: TO-247
20N40 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
20N40 Datasheet (PDF)
1.1. fqa20n40.pdf 
Size:712K _upd-mosfet
April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 19.5A, 400V, RDS(on) = 0.22Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 60 nC) planar stripe, DMOS technology. • Low Crss ( typical 45 pF) This advanced technology has bee
1.2. mtu20n40erev1.pdf Size:157K _motorola
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTU20N40E/D Designer's? Data Sheet MTU20N40E TMOS E-FET.? Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 20 AMPERES scheme to provide enhanced voltageblocking capability without 400 VOLTS degrading performance over time. In addition
1.3. mgp20n40clrev1.pdf Size:133K _motorola
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N40CL/D Advanced Information MGP20N40CL SMARTDISCRETES? Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insulated Gate Bipolar Transistor (IGBT) VOLTAGE CLAMPED features GateEmitter ESD protection, GateCollector overvoltage NCHANNEL IGBT protection from SMARTDISCRETES? monolithic circuitry for Vce(on
1.4. mtu20n40e.pdf Size:162K _motorola
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTU20N40E/D Designer's? Data Sheet MTU20N40E TMOS E-FET.? Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 20 AMPERES scheme to provide enhanced voltageblocking capability without 400 VOLTS degrading performance over time. In addition
1.5. mgp20n40cl.pdf Size:138K _motorola
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N40CL/D Advanced Information MGP20N40CL SMARTDISCRETES? Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insulated Gate Bipolar Transistor (IGBT) VOLTAGE CLAMPED features GateEmitter ESD protection, GateCollector overvoltage NCHANNEL IGBT protection from SMARTDISCRETES? monolithic circuitry for Vce(on
1.6. fdbl0120n40.pdf Size:488K _fairchild_semi
November 2014 FDBL0120N40 N-Channel PowerTrench® MOSFET 40 V, 240 A, 1.2 mΩ Features Typical RDS(on) = 0.9 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 90 nC at VGS = 10V, ID = 80 A UIS Capability D RoHS Compliant Applications Industrial Motor Drive G Industrial Power Supply Industrial Automation Battery Operated tools S Battery Protection For current package
1.7. sgr20n40l.pdf Size:174K _samsung
Preliminary N-CHANNEL IGBT SGR20N40L / SGU20N40L D-PAK I-PAK FEATURES * High Input Impedance * High Peak Current Capability (150A) * Easy Gate Drive APPLICATIONS C *Strobe Flash G E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 450 V Collector-Emitter Voltage VGES 6 V Gate-Emitter Voltage ICM (1) 150 A Pulsed Collector Current PC 45 W Maximum Power Dis
1.8. 20n40.pdf Size:195K _utc
UNISONIC TECHNOLOGIES CO., LTD 20N40 Preliminary Power MOSFET 400V, 23A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in
1.9. aotf20n40.pdf Size:331K _aosemi
AOTF20N40 400V,20A N-Channel MOSFET General Description Product Summary VDS 500@150℃ The AOTF20N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.25Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche
Datasheet: 8N40 , 9N40 , 10N40 , 11N40 , 12N40 , 13N40 , 15N40 , 18N40 , 2SK3568 , 25N40 , UF730 , UF740 , UF3N25 , UF634 , 12N25 , 15N25 , 18N25 .
