20N40 MOSFET. Datasheet pdf. Equivalent

Type Designator: 20N40

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 235 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 23 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 92 nS

Drain-Source Capacitance (Cd): 370 pF

Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm

Package: TO-247

20N40 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

20N40 Datasheet (PDF)

1.1. fqa20n40.pdf Size:712K _upd-mosfet

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 19.5A, 400V, RDS(on) = 0.22Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 60 nC) planar stripe, DMOS technology. • Low Crss ( typical 45 pF) This advanced technology has bee

1.2. mtu20n40erev1.pdf Size:157K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTU20N40E/D Designer's? Data Sheet MTU20N40E TMOS E-FET.? Power Field Effect Transistor N�Channel Enhancement�Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 20 AMPERES scheme to provide enhanced voltage�blocking capability without 400 VOLTS degrading performance over time. In addition

1.3. mgp20n40clrev1.pdf Size:133K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N40CL/D Advanced Information MGP20N40CL SMARTDISCRETES? Internally Clamped, N-Channel IGBT 20 AMPERES This Logic Level Insulated Gate Bipolar Transistor (IGBT) VOLTAGE CLAMPED features Gate�Emitter ESD protection, Gate�Collector overvoltage N�CHANNEL IGBT protection from SMARTDISCRETES? monolithic circuitry for Vce(on

1.4. mtu20n40e.pdf Size:162K _motorola

1.5. mgp20n40cl.pdf Size:138K _motorola

1.6. fdbl0120n40.pdf Size:488K _fairchild_semi

November 2014 FDBL0120N40 N-Channel PowerTrench® MOSFET 40 V, 240 A, 1.2 mΩ Features Typical RDS(on) = 0.9 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 90 nC at VGS = 10V, ID = 80 A UIS Capability D RoHS Compliant Applications Industrial Motor Drive G Industrial Power Supply Industrial Automation Battery Operated tools S Battery Protection For current package

1.7. sgr20n40l.pdf Size:174K _samsung

Preliminary N-CHANNEL IGBT SGR20N40L / SGU20N40L D-PAK I-PAK FEATURES * High Input Impedance * High Peak Current Capability (150A) * Easy Gate Drive APPLICATIONS C *Strobe Flash G E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 450 V Collector-Emitter Voltage VGES 6 V Gate-Emitter Voltage ICM (1) 150 A Pulsed Collector Current PC 45 W Maximum Power Dis

1.8. 20n40.pdf Size:195K _utc

UNISONIC TECHNOLOGIES CO., LTD 20N40 Preliminary Power MOSFET 400V, 23A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in

1.9. aotf20n40.pdf Size:331K _aosemi

AOTF20N40 400V,20A N-Channel MOSFET General Description Product Summary VDS 500@150℃ The AOTF20N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.25Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

LIST

Last Update

All MOSFET. 20N40 Datasheet

20N40 MOSFET. Datasheet pdf. Equivalent

20N40 Datasheet (PDF)

LIST

Last Update

AllTransistors(C)2015