All MOSFET. 20N40 Datasheet

 

20N40 Datasheet and Replacement


   Type Designator: 20N40
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 235 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 92 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO-247
 

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20N40 Datasheet (PDF)

 ..1. Size:195K  utc
20n40.pdf pdf_icon

20N40

UNISONIC TECHNOLOGIES CO., LTD 20N40 Preliminary Power MOSFET 400V, 23A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N40 is an N-channel mode power MOSFET usingUTCs advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse

 0.1. Size:186K  1
sgr20n40l sgu20n40l.pdf pdf_icon

20N40

August 2001 IGBTSGR20N40L / SGU20N40LGeneral Description FeaturesInsulated Gate Bipolar Transistors (IGBTs) with a trench High input impedancegate structure provide superior conduction and switching High peak current capability (150A)performance in comparison with transistors having a planar Easy gate drivegate structure. They also have wide noise immunity. These

 0.2. Size:133K  motorola
mgp20n40clrev1.pdf pdf_icon

20N40

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP20N40CL/DAdvanced InformationMGP20N40CLSMARTDISCRETESInternally Clamped, N-ChannelIGBT20 AMPERESThis Logic Level Insulated Gate Bipolar Transistor (IGBT)VOLTAGE CLAMPEDfeatures GateEmitter ESD protection, GateCollector overvoltageNCHANNEL IGBTprotection from SMARTDISCRETES monolithic circuitr

 0.3. Size:157K  motorola
mtu20n40erev1.pdf pdf_icon

20N40

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTU20N40E/DDesigner's Data SheetMTU20N40ETMOS E-FET.Power Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination20 AMPERESscheme to provide enhanced voltageblocking capability without400 VOLTSdegrading performance over time

Datasheet: 8N40 , 9N40 , 10N40 , 11N40 , 12N40 , 13N40 , 15N40 , 18N40 , 10N65 , 25N40 , UF730 , UF740 , UF3N25 , UF634 , 12N25 , 15N25 , 18N25 .

History: RFD4N06L | IRLU3717 | CET0215 | SSF5NS60UD | DH025N04 | SMOS44N80 | NCV8450

Keywords - 20N40 MOSFET datasheet

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