12N06Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

UNISONIC TECHNOLOGIES CO., LTD 12N06Z Power MOSFET 12A, 60V N-CHANNEL POWER MOSFET DESCRIPTION 1The UTC 12N06Z is an N-channel enhancement mode Power TO-252MOSFET using UTC s advanced technology to provide customerswith a minimum on-state resistance, high switching speed and low gate charge. FEATURES * 12A, 60V, RDS(on)

STD12N05LSTD12N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD12N05L 50 V

STD12N05STD12N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD12N05 50 V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD12N06EZL/DDesigner's Data SheetMTD12N06EZLTMOS E-FET.High Energy Power FETDPAK for Surface Mount orTMOS POWER FET12 AMPERESInsertion Mount60 VOLTSNChannel EnhancementMode Silicon GateRDS(on) = 0.180 OHMThis advanced TMOS power FET is designed to withstand highenergy in the avalanche and mode

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12N06EZL/DDesigner's Data SheetMTP12N06EZLTMOS E-FET.High Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS power FET is designed to withstand high12 AMPERESenergy in the avalanche mode and switch efficiently. This new high60 VOLTSenergy device also offers a g

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12N06EZL/DDesigner's Data SheetMTP12N06EZLTMOS E-FET.High Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS power FET is designed to withstand high12 AMPERESenergy in the avalanche mode and switch efficiently. This new high60 VOLTSenergy device also offers a g

PHP112N06T; PHB112N06TN-channel enhancement mode field-effect transistorRev. 01 07 March 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP112N06T in SOT78 (TO-220AB)PHB112N06T in SOT404 (D2-PAK).2. Features Fast switching Very low on-state resistan

RFD12N06RLE, RFD12N06RLESM,RFP12N06RLEData Sheet January 200217A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.063, VGS = 10VDRAIN DRAIN (FLANGE)GATE - rDS(ON) = 0.071, VGS = 5V (FLANGE)GATE Simulation ModelsSOURCE- Temperature Compensate

BSC112N06LDMOSFETPG-TDSON-8-4OptiMOSTM-T2 Power Transistor, 60 V8 17Features 26354 Dual N-channel, Logic level Fast switching MOSFETs for SMPS Optimized technology for Synchronous Rectification Pb-free plating; RoHS compliant182 7 100% Avalanche tested3 654 Superior Thermal Resistance Halogen-free according to IEC61249-2-21Product Va

BSC012N06NSMOSFETTSON-8-3OptiMOSTM5 Power-Transistor, 60 V8756 6Features 758 Optimized for synchronous rectificationPin 1 100% avalanche tested2433 Superior thermal resistance4 21 N-channel 175C rated Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Higher solder joint reliability due to enla

IPT012N06NMOSFETHSOFOptiMOSTM Power-Transistor, 60 VFeaturesTab 100% avalanche tested Superior thermal resistance N-channel1 Qualified according to JEDEC1) for target applications 2345 Pb-free lead plating; RoHS compliant678 Halogen-free according to IEC61249-2-21Product validationFully qualified according to JEDEC for Industrial Applica

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD 12N06 Preliminary Power MOSFET 12 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION 1The UTC UT12N06 is an N-channel mode Power MOSFET usingTO-252UTCs advanced technology to provide customers with minimum on-state resistance with extremely high dense cell design, rugged avalanche characteristics and less critical alignment steps . FEAT

GOFORDGT12N06SN-Channel Enhancement Mode Power MOSFETDescriptionThe GT12N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 60V ID (at VGS = 10V) 12A RDS(ON) (at VGS = 10V)

D12N0612A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionD12N06 is an N-channel enhancement mode power2 DV = 60Vfield-effect transistor. Using advanced trench technology DSSdesign, providing excellent Rdson and low gate charge.TheR = 56mDS(on) (TYP)Gproduct can be used in a wide variety of application.The1package form is TO-252. Which accords with the RoHS

SG12N06T, SG12N06DTDiscrete IGBTsDimensions TO-247AD Dim. Millimeter InchesMin. Max. Min. Max.A 19.81 20.32 0.780 0.800B 20.80 21.46 0.819 0.845C 15.75 16.26 0.610 0.640EG=Gate, C=Collector,D 3.55 3.65 0.140 0.144C(TAB)CE=Emitter,TAB=CollectorGE 4.32 5.49 0.170 0.216F 5.4 6.2 0.212 0.244G 1.65 2.13 0.065 0.084H - 4.5 - 0.177J 1.0 1.4 0.040 0.055K 10.8 11.0

SG12N06P, SG12N06DPDiscrete IGBTsDimensions TO-220ABDim. Inches Milimeter Min. Max. Min. Max.A 0.500 0.550 12.70 13.97EB 0.580 0.630 14.73 16.00CC 0.390 0.420 9.91 10.66GD 0.139 0.161 3.54 4.08E 0.230 0.270 5.85 6.85G=Gate, C=Collector, E=EmitterF 0.100 0.125 2.54 3.18G 0.045 0.065 1.15 1.65H 0.110 0.230 2.79 5.84J 0.025 0.040 0.64 1.01K 0.100 BSC 2.54 BSCM

SG12N06T, SG12N06DTDiscrete IGBTsDimensions TO-247AD Dim. Millimeter InchesMin. Max. Min. Max.A 19.81 20.32 0.780 0.800B 20.80 21.46 0.819 0.845C 15.75 16.26 0.610 0.640EG=Gate, C=Collector,D 3.55 3.65 0.140 0.144C(TAB)CE=Emitter,TAB=CollectorGE 4.32 5.49 0.170 0.216F 5.4 6.2 0.212 0.244G 1.65 2.13 0.065 0.084H - 4.5 - 0.177J 1.0 1.4 0.040 0.055K 10.8 11.0

SG12N06P, SG12N06DPDiscrete IGBTsDimensions TO-220ABDim. Inches Milimeter Min. Max. Min. Max.A 0.500 0.550 12.70 13.97EB 0.580 0.630 14.73 16.00CC 0.390 0.420 9.91 10.66GD 0.139 0.161 3.54 4.08E 0.230 0.270 5.85 6.85G=Gate, C=Collector, E=EmitterF 0.100 0.125 2.54 3.18G 0.045 0.065 1.15 1.65H 0.110 0.230 2.79 5.84J 0.025 0.040 0.64 1.01K 0.100 BSC 2.54 BSCM

Silicon N-Channel Power Trench MOSFET R CS12N06 AE-G General Description VDSS 60 V CS12N06 AE-G, the silicon N-channel Enhanced ID Silicon limited current 12 A PD(TC=25) 3.2 W VDMOSFETs, is obtained by the high density Trenchtechnology RDS(ON)Typ 10.5 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The

VSO012N06MS 60V/13A N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),TYP@ VGS=10 V 9.5 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5V 11.5 m Enhancement mode I D 13 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching SOP8 Pb-free lead plating; RoHS compliant MSL: Level 1 compliant Tape and reel Part ID

VST012N06MS 60V/55A N-Channel Advanced Power MOSFET V DS 60 VFeatures R DS(on),TYP@ VGS=10 V 8.4 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5V 9.8 m Enhancement mode I D 55 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching TO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliant Tape and reel Part ID Pac

VBZE12N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.095at VGS = 10 V 16 Material categorization:60 19.8For definitions of compliance please see0.110 at VGS = 4.5 V 13TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters Motor Dr

RFD12N06RLESwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

VBZJ12N06www.VBsemi.comN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 10 V 4RoHS10 nC COMPLIANT60APPLICATIONS0.085 at VGS = 4.5 V 3 Load Switches for Portable DevicesDSOT-223-3D GSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless o

TSG12N06AT Wuxi Unigroup Microelectronics Co.,Ltd. 60V N-Channel DTMOS Product Summary Features Trench Power DTMOS Technology VDS 60V Low RDS(ON) RDS(ON) (at VGS=10V)

TSD12N06AT Wuxi Unigroup Microelectronics Company 60V N-Channel DTMOS FEATURES Trench Power DTMOS technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Pa