All MOSFET. 12N06Z Datasheet

 

12N06Z MOSFET. Datasheet pdf. Equivalent

Type Designator: 12N06Z

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 35 nS

Drain-Source Capacitance (Cd): 75 pF

Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm

Package: TO-252

12N06Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

12N06Z Datasheet (PDF)

1.1. 12n06z.pdf Size:189K _utc

12N06Z
12N06Z

UNISONIC TECHNOLOGIES CO., LTD 12N06Z Power MOSFET 12A, 60V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 12N06Z is an N-channel enhancement mode Power TO-252 MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. FEATURES * 12A, 60V, RDS(on) < 0.10? @VGS = 10V * High switching speed *

5.1. mtp12n06ezl.pdf Size:194K _motorola

12N06Z
12N06Z

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP12N06EZL/D Designer's? Data Sheet MTP12N06EZL TMOS E-FET.? High Energy Power FET NChannel EnhancementMode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 12 AMPERES energy in the avalanche mode and switch efficiently. This new high 60 VOLTS energy device also offers a gatetosour

5.2. mtd12n06e.pdf Size:276K _motorola

12N06Z
12N06Z

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD12N06EZL/D Designer's? Data Sheet MTD12N06EZL TMOS E-FET.? High Energy Power FET DPAK for Surface Mount or TMOS POWER FET 12 AMPERES Insertion Mount 60 VOLTS NChannel EnhancementMode Silicon Gate RDS(on) = 0.180 OHM This advanced TMOS power FET is designed to withstand high energy in the avalanche and mode and switch

 5.3. mtp12n06ez.pdf Size:222K _motorola

12N06Z
12N06Z

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP12N06EZL/D Designer's? Data Sheet MTP12N06EZL TMOS E-FET.? High Energy Power FET NChannel EnhancementMode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 12 AMPERES energy in the avalanche mode and switch efficiently. This new high 60 VOLTS energy device also offers a gatetosour

5.4. phb112n06t php112n06t.pdf Size:262K _philips2

12N06Z
12N06Z

PHP112N06T; PHB112N06T N-channel enhancement mode field-effect transistor Rev. 01 — 07 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP112N06T in SOT78 (TO-220AB) PHB112N06T in SOT404 (D2-PAK). 2. Features Fast switching Very low on-state resistan

 5.5. rfd12n06rle rfd12n06rlesm rfp12n06rle.pdf Size:215K _fairchild_semi

12N06Z
12N06Z

RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet January 2002 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA • Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.063Ω, VGS = 10V DRAIN DRAIN (FLANGE) GATE - rDS(ON) = 0.071Ω, VGS = 5V (FLANGE) GATE • Simulation Models SOURCE - Temperature Compensate

5.6. 12n06.pdf Size:189K _utc

12N06Z
12N06Z

UNISONIC TECHNOLOGIES CO., LTD 12N06 Preliminary Power MOSFET 12 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC UT12N06 is an N-channel mode Power MOSFET using TO-252 UTC’s advanced technology to provide customers with minimum on-state resistance with extremely high dense cell design, rugged avalanche characteristics and less critical alignment steps . FEATURE

5.7. sg12n06t.pdf Size:101K _igbt

12N06Z
12N06Z

SG12N06T, SG12N06DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 E G=Gate, C=Collector, D 3.55 3.65 0.140 0.144 C(TAB) C E=Emitter,TAB=Collector G E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0

5.8. sg12n06dp.pdf Size:191K _igbt

12N06Z
12N06Z

SG12N06P, SG12N06DP Discrete IGBTs Dimensions TO-220AB Dim. Inches Milimeter Min. Max. Min. Max. A 0.500 0.550 12.70 13.97 E B 0.580 0.630 14.73 16.00 C C 0.390 0.420 9.91 10.66 G D 0.139 0.161 3.54 4.08 E 0.230 0.270 5.85 6.85 G=Gate, C=Collector, E=Emitter F 0.100 0.125 2.54 3.18 G 0.045 0.065 1.15 1.65 H 0.110 0.230 2.79 5.84 J 0.025 0.040 0.64 1.01 K 0.100 BSC 2.54 BSC M

5.9. sg12n06p.pdf Size:191K _igbt

12N06Z
12N06Z

SG12N06P, SG12N06DP Discrete IGBTs Dimensions TO-220AB Dim. Inches Milimeter Min. Max. Min. Max. A 0.500 0.550 12.70 13.97 E B 0.580 0.630 14.73 16.00 C C 0.390 0.420 9.91 10.66 G D 0.139 0.161 3.54 4.08 E 0.230 0.270 5.85 6.85 G=Gate, C=Collector, E=Emitter F 0.100 0.125 2.54 3.18 G 0.045 0.065 1.15 1.65 H 0.110 0.230 2.79 5.84 J 0.025 0.040 0.64 1.01 K 0.100 BSC 2.54 BSC M

5.10. sg12n06dt.pdf Size:101K _igbt

12N06Z
12N06Z

SG12N06T, SG12N06DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 E G=Gate, C=Collector, D 3.55 3.65 0.140 0.144 C(TAB) C E=Emitter,TAB=Collector G E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0

Datasheet: UF3205 , 2N7000Z , 2N7002LL , 2N7002Z , 2N7002ZT , UF3055 , UTD3055 , 12N06 , 40673 , 15N06 , 12N10 , 15N20 , 19N10 , 22N20 , 25N06 , 25N10 , 30N06 .

 
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