12N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

UNISONIC TECHNOLOGIES CO., LTD 12N10 Power MOSFET 12A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N10 is an N-channel mode power MOSFET usingUTCs advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged avalanche characteristics and less critical alignment steps. FEATURES * RDS(on)

12N10www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12N10E/DDesigner's Data SheetMTP12N10ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high12 AMPERESenergy in the avalanche and commutation modes. The new energy100 VOLTSeffi

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12N10E/DDesigner's Data SheetMTP12N10ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high12 AMPERESenergy in the avalanche and commutation modes. The new energy100 VOLTSeffi

Philips Semiconductors Product Specification PowerMOS transistor PHP12N10E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. The device is VDS Drain-source voltage 100 Vintended for use in Switched Mode ID Drain current (DC) 14 APower Supplies (SMPS), motor Ptot Total power dissipation 7

Philips Semiconductors Product Specification PowerMOS transistor PHD12N10E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 100 Vmounting. The device is intended for ID Drain current (DC) 14 Ause in Switched Mode Power Ptot Total power dissip

RFP12N10LData Sheet April 200512A, 100V, 0.200 Ohm, Logic Level, FeaturesN-Channel Power MOSFET 12A, 100VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.200power field effect transistors specifically designed for use Design Optimized for 5V Gate Driveswith logic level (5V) driving sources in applications such as programmable controllers, automotiv

VCES IC25 VCE(sat)IGBTIXGA/IXGP12N100 1000 V 24 A 3.5 VIXGA/IXGP12N100A 1000 V 24 A 4.0 VPreliminary Data SheetTO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VGVGES Continuous 20 VCEVGEM Transient 30 VIC25 TC = 25C24 ATO-263 (IXGA)IC90 TC = 90C12 AICM TC = 25C, 1 ms 48 A

VDSS ID25 RDS(on)MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 10N

VCES IC25 VCE(sat)Low VCE(sat) IGBT with DiodeHigh Speed IGBT with DiodeIXGH 12N100U1 1000 V 24 A 3.5 VCombi Pack IXGH 12N100AU1 1000 V 24 A 4.0 VSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GCIC25 TC = 25C24 AEIC90 TC = 90C12 AICM

VCES IC25 VCE(sat)IGBTIXGA/IXGP12N100 1000 V 24 A 3.5 VIXGA/IXGP12N100A 1000 V 24 A 4.0 VPreliminary Data SheetTO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VGVGES Continuous 20 VCEVGEM Transient 30 VIC25 TC = 25C24 ATO-263 (IXGA)IC90 TC = 90C12 AICM TC = 25C, 1 ms 48 A

VCES IC25 VCE(sat)Low VCE(sat) IGBT with DiodeHigh Speed IGBT with DiodeIXGH 12N100U1 1000 V 24 A 3.5 VCombi Pack IXGH 12N100AU1 1000 V 24 A 4.0 VSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GCIC25 TC = 25C24 AEIC90 TC = 90C12 AICM

VCES IC25 VCE(sat)IGBTIXGA/IXGP12N100U1 1000 V 24 A 3.5 VCombi PackIXGA/IXGP12N100AU1 1000 V 24 A 4.0 VPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-220AB(IXGP)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C24 AIC90 TC = 90C12 AICM TC =

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 10 N100 1000 V 10 A 1.20 Power MOSFETsIXFH/IXFM 12 N100 1000 V 12 A 1.05 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M

VCES IC25 VCE(sat)Low VCE(sat) IGBTHigh Speed IGBTIXGH 12N100 1000 V 24 A 3.5 VIXGH 12N100A 1000 V 24 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VC (TAB)GCVGEM Transient 30 VEIC25 TC = 25C24 AG = Gate C = CollectorIC90 TC = 90C12 AE = Emitter TAB =

Advance Technical InformationHigh Voltage HiPerFETTMVDSS = 1000VIXFT12N100QHVPower MOSFETID25 = 12A Q-CLASS RDS(on) 1.05 N-Channel Enhancement ModeFast Intrinsic DiodeTO-268SGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1000 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VG = Ga

VCES IC25 VCE(sat)IGBTIXGA/IXGP12N100 1000 V 24 A 3.5 VIXGA/IXGP12N100A 1000 V 24 A 4.0 VPreliminary Data SheetTO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VGVGES Continuous 20 VCEVGEM Transient 30 VIC25 TC = 25C24 ATO-263 (IXGA)IC90 TC = 90C12 AICM TC = 25C, 1 ms 48 A

VCES IC25 VCE(sat)IGBTIXGA/IXGP12N100U1 1000 V 24 A 3.5 VCombi PackIXGA/IXGP12N100AU1 1000 V 24 A 4.0 VPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-220AB(IXGP)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C24 AIC90 TC = 90C12 AICM TC =

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFT12N100Q 1000 V 12 A 1.05 Power MOSFETsIXFH/IXFT10N100Q 1000 V 10 A 1.20 Q Class trr 250 ns N-Channel Enhancement ModeAvalanche RatedLow Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS

VCES IC25 VCE(sat)Low VCE(sat) IGBTHigh Speed IGBTIXGH 12N100 1000 V 24 A 3.5 VIXGH 12N100A 1000 V 24 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VC (TAB)GCVGEM Transient 30 VEIC25 TC = 25C24 AG = Gate C = CollectorIC90 TC = 90C12 AE = Emitter TAB =

VDSS ID25 RDS(on)HiPerFETTMIXFT 10 N100 1000 V 10 A 1.20 Power MOSFETsIXFT12 N100 1000 V 12 A 1.05 N-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM Family trr 250 ns Preliminary data sheetSymbol Test Conditions Maximum Ratings TO-268 Case StyleVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150

VDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 12N100F 1000 V 10 A 1.05 ISOPLUS247TMIXFR 10N100F 1000 V 9 A 1.20 F-Class: MegaHertz Switching trr 250 ns (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche Rated, High dV/dtLow Gate Charge and CapacitancesPreliminary Data SheetSymbol

IXZ4DF12N100 RF Power MOSFET & DRIVER 1000 Volts Driver / MOSFET Combination 12 A DEIC-515 Driver combined with a DE375-102N12A MOSFET 0.7 Ohms Gate driver matched to MOSFET Features Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power cycling capability IXYS advanced Z-MOS process Low RDS(on)

VCES IC25 VCE(sat)IGBTIXGA/IXGP12N100U1 1000 V 24 A 3.5 VCombi PackIXGA/IXGP12N100AU1 1000 V 24 A 4.0 VPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-220AB(IXGP)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C24 AIC90 TC = 90C12 AICM TC =

Advanced Technical InformationVDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 12N100Q 1000 V 10 A 1.05 WISOPLUS247TM Q CLASSIXFR 10N100Q 1000 V 9 A 1.20 W(Electrically Isolated Back Surface) trr 200 nsN-Channel Enhancement ModeAvalanche Rated, High dV/dtLow Gate Charge and CapacitancesSymbol Test Conditions Maximum Ratings ISOPLUS 247TMVDSS TJ = 25C to 150C 1000 V

VCES IC25 VCE(sat)Low VCE(sat) IGBTHigh Speed IGBTIXGH 12N100 1000 V 24 A 3.5 VIXGH 12N100A 1000 V 24 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VC (TAB)GCVGEM Transient 30 VEIC25 TC = 25C24 AG = Gate C = CollectorIC90 TC = 90C12 AE = Emitter TAB =

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NTD12N10Power MOSFET12 Amps, 100 VoltsN-Channel Enhancement-Mode DPAKhttp://onsemi.comFeatures Source-to-Drain Diode Recovery Time Comparable to a DiscreteV(BR)DSS RDS(on) TYP ID MAXFast Recovery Diode100 V 165 mW @ 10 V 12 A Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated TemperatureN-Channel Mounting Information Provided for the DPAK Pac

NTD12N10Power MOSFET12 Amps, 100 VoltsN-Channel Enhancement-Mode DPAKhttp://onsemi.comFeatures Source-to-Drain Diode Recovery Time Comparable to a DiscreteV(BR)DSS RDS(on) TYP ID MAXFast Recovery Diode100 V 165 mW @ 10 V 12 A Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated TemperatureN-Channel Mounting Information Provided for the DPAK Pac

UNISONIC TECHNOLOGIES CO., LTD 12N10 Power MOSFET 12A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N10 is an N-channel mode power MOSFETusing UTCs advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged avalanche characteristics and less critical alignment steps. FEATURES * RDS(on)

UNISONIC TECHNOLOGIES CO., LTD UT12N10 Preliminary Power MOSFET 12 Amps, 100 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-251The UTC UT12N10 is an N-channel mode Power FET using UTCs advanced technology to provide custumers with minimum on-state resistance by extremely high dense cell design. Moreover, it s good at handing high power and current. 1 FEATURES

CED12N10/CEU12N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 11A, RDS(ON) = 180m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless o

CED12N10/CEU12N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 11A, RDS(ON) = 180m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless o

CED12N10L/CEU12N10LN-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 11A, RDS(ON) = 175m @VGS = 10V. RDS(ON) = 185m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability. DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MA

CS12N10 N PD TC=25 75 W 0.6 W/ ID VGS=10V,TC=25 12 A IDM 30 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 1.25 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=45A 0.18 VGS th VDS=VGS,ID=0.25mA

SEMICONDUCTOR FTK12N10STECHNICAL DATAN-Channel Power MOSFETDESCRIPTION SOP-8The device uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURESDD D D Green Device Available 8 6 5 7 Special process technology for high ESD capability High density cell design for ul

BLP12N10G Step-Down Converter , 1Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSSI 11 A D

BLP12N10GL Step-Down Converter , 1Description BLP12N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSSI 35 A

BLP12N10G Step-Down Converter , 1Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifier and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSSI 55 A D

BLP12N10GL MOSFET Step-Down Converter , 1Description BLP12N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS

BLP12N10G Step-Down Converter , 1Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSSI 50 A D

BLP12N10G Step-Down Converter , 1Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSSI 49 A D

CHENMKO ENTERPRISE CO.,LTDCHM12N10PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 11 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High powe

NCEP12N10AQhttp://www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP12N10AQ uses Super Trench II technology that is VDS =100V,ID =46A uniquely optimized to provide the most efficient high frequency RDS(ON)=12.1m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=15.8m (typical) @ VGS=4.5V

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM12N10(MTM12N10) Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of powe

SL12N10 100V/12A N-Channel MOSFETFeatures Super high density cell design Product Summaryfor extremely low RDS(ON) VDS RDS(ON) MAX ID MAX Exceptional on-resistance and maximum DC current capability 160m@10VD2S1100V 12AD1180m@4.5VApplication Power Management in Note book DC/DC Converter D Load Switch LCD Display inverter DDGS

SL12N100Features Low gate charge Low C (typ 13pF)rss Fast switchin 100% avalanche tested Improved dv/dt capability RoHS productApplications High frequency switching mode power supply Electronic ballast based on half bridge LED power suppliesAbsolute Ratings (Tc=25)Parameter Symbol Value UnitDrain-Source Voltage V 1000 VDSS12 AI T

ST12N10D N Channel Enhancement Mode MOSFET 12.0A DESCRIPTION ST12N10D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST12N10D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been

WML12N105C2, WMM12N105C2 WMN12N105C2, WMJ12N105C2, WMK12N105C2 1050V 0.68 Super Junction Power MOSFET DescriptionWMOSTM C2 is Wayons 2nd generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM C2 is TO-220F TO-262 TO-220 suitable for applic

WML12N100C2, WMM C2 W M12N100CWMN12N WMJ12N10 K12N100CN100C2, W 00C2, WMK C2 1000V 0.68 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C

HSU12N10 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSU12N10 is the highest performance trench N-ch MOSFETs with extreme high cell density, RDS(ON),TYP 93 m which provide excellent RDSON and gate charge for most of the synchronous buck converter ID 12 A applications . The HSU12N10 meet the RoHS and Green Product requirement, 100% EAS gua

PTD12N10 100V/12A N-Channel Advanced PowerMOSFETFeatures VDS=100V; ID=12A RDS(ON)

WSF12N10 N-Ch MOSFETProduct SummeryGeneral Description The WSF12N10 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell 175m 12Adensity , which provide excellent RDSON and 100Vgate charge for most of the synchronous buck converter applications . Applications The WSF12N10 meet the RoHS and Green High Frequency Point-of-Load Synchrono

ST12N10Dwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS

NTD12N10-1Gwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.115 at VGS = 10 V15 100 % Rg Tested1000.120 at VGS = 6 V 15APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwi

CEU12N10www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS

MTP12N10Lwww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.092 at VGS = 10 V10018COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGSG D SN-Channel MOSFETTop ViewABSOLUTE M

CMU12N10www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.115 at VGS = 10 V 15 100 % Rg Tested1000.120 at VGS = 6 V 15APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise

MTP12N10Ewww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.092 at VGS = 10 V10018COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGSG D SN-Channel MOSFETTop ViewABSOLUTE M

CED12N10Lwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.115 at VGS = 10 V 15 100 % Rg Tested1000.120 at VGS = 6 V 15APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwis

VBZE12N10www.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature100at VGS = 10 V0.090 17 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS

CED12N10www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.115 at VGS = 10 V 15 100 % Rg Tested1000.120 at VGS = 6 V 15APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise

TSG12N10AT Wuxi Unigroup Microelectronics Company 100V N-Channel DTMOS FEATURES Trench Power DTMOS Technology Low RDS(ON) Low Gate Charge Optimized for Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device P