All MOSFET. 12N10 Datasheet

 

12N10 MOSFET. Datasheet pdf. Equivalent

Type Designator: 12N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 73 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 7 nS

Drain-Source Capacitance (Cd): 90 pF

Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm

Package: TO-220_TO-251_TO-252

12N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

12N10 Datasheet (PDF)

1.1. st12n10d.pdf Size:572K _upd

12N10
12N10

ST12N10D N Channel Enhancement Mode MOSFET 12.0A DESCRIPTION ST12N10D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST12N10D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been

1.2. cs12n10.pdf Size:124K _update_mosfet

12N10

CS12N10 型 N 沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 75 W 线性降低系数 0.6 W/℃ ID (VGS=10V,TC=25℃) 12 A 极 限 IDM 30 A 值 VGS ±20 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 1.25 ℃/W 性 BVDSS VGS=0V,ID=0.25mA 100 V RDS on) VGS=10V,ID=45A 0.18 Ω ( VGS th) VDS=VGS,ID=0.25mA

 1.3. rfm12n08 rfm12n10 rfp12n08 rfp12n10.pdf Size:94K _update_mosfet

12N10
12N10



1.4. rfm12n08l rfm12n10l rfp12n08l.pdf Size:95K _update_mosfet

12N10
12N10



 1.5. chm12n10pagp.pdf Size:47K _update_mosfet

12N10
12N10

CHENMKO ENTERPRISE CO.,LTD CHM12N10PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 11 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High powe

1.6. wvm12n10.pdf Size:23K _update_mosfet

12N10

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM12N10(MTM12N10) Power MOSFET(N-channel) Transistor Features: 1. It’s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of powe

1.7. mtp12n10erev1a.pdf Size:239K _motorola

12N10
12N10

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP12N10E/D Designer's? Data Sheet MTP12N10E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This advanced TMOS EFET is designed to withstand high 12 AMPERES energy in the avalanche and commutation modes. The new energy 100 VOLTS efficient design

1.8. mtp12n10e.pdf Size:203K _motorola

12N10
12N10

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP12N10E/D Designer's? Data Sheet MTP12N10E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This advanced TMOS EFET is designed to withstand high 12 AMPERES energy in the avalanche and commutation modes. The new energy 100 VOLTS efficient design

1.9. php12n10e 1.pdf Size:57K _philips2

12N10
12N10

Philips Semiconductors Product Specification PowerMOS transistor PHP12N10E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. The device is VDS Drain-source voltage 100 V intended for use in Switched Mode ID Drain current (DC) 14 A Power Supplies (SMPS), motor Ptot Total power dissipation 75 W

1.10. phd12n10e 2.pdf Size:61K _philips2

12N10
12N10

Philips Semiconductors Product Specification PowerMOS transistor PHD12N10E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 100 V mounting. The device is intended for ID Drain current (DC) 14 A use in Switched Mode Power Ptot Total power dissipati

1.11. rfp12n10l.pdf Size:131K _fairchild_semi

12N10
12N10

RFP12N10L Data Sheet April 2005 12A, 100V, 0.200 Ohm, Logic Level, Features N-Channel Power MOSFET • 12A, 100V These are N-Channel enhancement mode silicon gate • rDS(ON) = 0.200Ω power field effect transistors specifically designed for use • Design Optimized for 5V Gate Drives with logic level (5V) driving sources in applications such as programmable controllers, automotiv

1.12. ixft12n100qhv.pdf Size:148K _ixys

12N10
12N10

Advance Technical Information High Voltage HiPerFETTM VDSS = 1000V IXFT12N100QHV Power MOSFET ID25 = 12A ≤ Ω ≤ Ω Q-CLASS RDS(on) ≤ 1.05Ω ≤ Ω ≤ Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-268S G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25°C to 150°C 1000 V D (Tab) VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±20 V G = Ga

1.13. ixft10n100 ixft12n100.pdf Size:556K _ixys

12N10
12N10

VDSS ID25 RDS(on) HiPerFETTM ? IXFT 10 N100 1000 V 10 A 1.20 ? ? ? ? Power MOSFETs ? IXFT12 N100 1000 V 12 A 1.05 ? ? ? ? N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ? trr ? ? 250 ns ? ? Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-268 Case Style VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V G (TAB) VGS

1.14. ixfr10n100q ixfr12n100q.pdf Size:33K _ixys

12N10
12N10

Advanced Technical Information VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFR 12N100Q 1000 V 10 A 1.05 W ISOPLUS247TM Q CLASS IXFR 10N100Q 1000 V 9 A 1.20 W (Electrically Isolated Back Surface) trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VDSS TJ = 25°C to 150°C 1000 V

1.15. ixga12n100u1 ixgp12n100u1 ixga12n100au1 ixgp12n100au1.pdf Size:116K _ixys

12N10
12N10

VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100U1 1000 V 24 A 3.5 V Combi Pack IXGA/IXGP12N100AU1 1000 V 24 A 4.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220AB(IXGP) VCES TJ = 25C to 150C 1000 V VCGR TJ = 25C to 150C; RGE = 1 MW 1000 V G C E VGES Continuous 20 V VGEM Transient 30 V TO-263 AA (IXGA) IC25 TC = 25C24 A IC90 TC = 90C12 A ICM TC = 25C, 1 ms

1.16. ixft12n100q ixfh12n100q ixft10n100q ixfh10n100q.pdf Size:144K _ixys

12N10
12N10

VDSS ID25 RDS(on) HiPerFETTM Ω IXFH/IXFT12N100Q 1000 V 12 A 1.05 Ω Ω Ω Ω Power MOSFETs Ω IXFH/IXFT10N100Q 1000 V 10 A 1.20 Ω Ω Ω Ω Q Class ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS

1.17. ixgh12n100 ixgh12n100a.pdf Size:35K _ixys

12N10
12N10

VCES IC25 VCE(sat) Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 1000 V 24 A 3.5 V IXGH 12N100A 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25C to 150C 1000 V VCGR TJ = 25C to 150C; RGE = 1 MW 1000 V VGES Continuous 20 V C (TAB) G C VGEM Transient 30 V E IC25 TC = 25C24 A G = Gate C = Collector IC90 TC = 90C12 A E = Emitter TAB = Collector

1.18. ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf Size:105K _ixys

12N10
12N10

VDSS ID25 RDS(on) MegaMOSTMFET Ω Ω IXTH / IXTM 10N100 1000 V 10 A 1.20 Ω Ω Ω Ω IXTH / IXTM 12N100 1000 V 12 A 1.05 Ω Ω Ω Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 TC = 25°C 10N

1.19. ixfh10n100 ixfm10n100 ixfh12n100 ixfm12n100.pdf Size:570K _ixys

12N10
12N10

VDSS ID25 RDS(on) HiPerFETTM ? IXFH/IXFM 10 N100 1000 V 10 A 1.20 ? ? ? ? Power MOSFETs ? IXFH/IXFM 12 N100 1000 V 12 A 1.05 ? ? ? ? N-Channel Enhancement Mode ? ? 250 ns ? ? High dv/dt, Low trr, HDMOSTM Family trr ? Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V VGS Continuous 20 V (TAB)

1.20. ixfr10n100f ixfr12n100f.pdf Size:97K _ixys

12N10
12N10

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs Ω IXFR 12N100F 1000 V 10 A 1.05 Ω Ω Ω Ω ISOPLUS247TM Ω IXFR 10N100F 1000 V 9 A 1.20 Ω Ω Ω Ω F-Class: MegaHertz Switching ≤ trr ≤ ≤ 250 ns ≤ ≤ (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet Symbol

1.21. ixz4df12n100.pdf Size:245K _ixys

12N10
12N10

IXZ4DF12N100 RF Power MOSFET & DRIVER 1000 Volts Driver / MOSFET Combination 12 A DEIC-515 Driver combined with a DE375-102N12A MOSFET 0.7 Ohms Gate driver matched to MOSFET Features • Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power cycling capability • IXYS advanced Z-MOS process • Low RDS(on)

1.22. ixga12n100 ixgp12n100 ixga12n100a ixgp12n100a.pdf Size:51K _ixys

12N10
12N10

VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100 1000 V 24 A 3.5 V IXGA/IXGP12N100A 1000 V 24 A 4.0 V Preliminary Data Sheet TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1000 V VCGR TJ = 25C to 150C; RGE = 1 MW 1000 V G VGES Continuous 20 V C E VGEM Transient 30 V IC25 TC = 25C24 A TO-263 (IXGA) IC90 TC = 90C12 A ICM TC = 25C, 1 ms 48 A G SSOA VGE

1.23. ntd12n10.pdf Size:158K _onsemi

12N10
12N10

NTD12N10 Power MOSFET 12 Amps, 100 Volts N-Channel Enhancement-Mode DPAK http://onsemi.com Features Source-to-Drain Diode Recovery Time Comparable to a Discrete V(BR)DSS RDS(on) TYP ID MAX Fast Recovery Diode 100 V 165 mW @ 10 V 12 A Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature N-Channel Mounting Information Provided for the DPAK Package D

1.24. ut12n10.pdf Size:145K _utc

12N10
12N10

UNISONIC TECHNOLOGIES CO., LTD UT12N10 Preliminary Power MOSFET 12 Amps, 100 Volts N-CHANNEL POWER MOSFET 1 ? DESCRIPTION TO-251 The UTC UT12N10 is an N-channel mode Power FET using UTC’s advanced technology to provide custumers with minimum on-state resistance by extremely high dense cell design. Moreover, it‘ s good at handing high power and current. 1 ? FEATURES TO-25

1.25. 12n10.pdf Size:224K _utc

12N10
12N10

UNISONIC TECHNOLOGIES CO., LTD 12N10 Power MOSFET 12A, 100V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged avalanche characteristics and less critical alignment steps. ? FEATURES * RDS(on)<0.18? @VGS =10V * H

1.26. ceu12n10 ced12n10.pdf Size:410K _cet

12N10
12N10

CED12N10/CEU12N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 11A, RDS(ON) = 180m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherw

1.27. ceu12n10l ced12n10l.pdf Size:571K _cet

12N10
12N10

CED12N10L/CEU12N10L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 11A, RDS(ON) = 175m? @VGS = 10V. RDS(ON) = 185m? @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM R

1.28. ixgp12n100a.pdf Size:50K _igbt

12N10
12N10

VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100 1000 V 24 A 3.5 V IXGA/IXGP12N100A 1000 V 24 A 4.0 V Preliminary Data Sheet TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V G VGES Continuous ±20 V C E VGEM Transient ±30 V IC25 TC = 25°C24 A TO-263 (IXGA) IC90 TC = 90°C12 A ICM TC = 25°C, 1 ms 48 A

1.29. ixgh12n100au1.pdf Size:119K _igbt

12N10
12N10

VCES IC25 VCE(sat) Low VCE(sat) IGBT with Diode High Speed IGBT with Diode IXGH 12N100U1 1000 V 24 A 3.5 V Combi Pack IXGH 12N100AU1 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V C (TAB) G C IC25 TC = 25°C24 A E IC90 TC = 90°C12 A ICM

1.30. ixgp12n100.pdf Size:50K _igbt

12N10
12N10

VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100 1000 V 24 A 3.5 V IXGA/IXGP12N100A 1000 V 24 A 4.0 V Preliminary Data Sheet TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V G VGES Continuous ±20 V C E VGEM Transient ±30 V IC25 TC = 25°C24 A TO-263 (IXGA) IC90 TC = 90°C12 A ICM TC = 25°C, 1 ms 48 A

1.31. ixgp12n100au1.pdf Size:84K _igbt

12N10
12N10

VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100U1 1000 V 24 A 3.5 V Combi Pack IXGA/IXGP12N100AU1 1000 V 24 A 4.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220AB(IXGP) VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V G C E VGES Continuous ±20 V VGEM Transient ±30 V TO-263 AA (IXGA) IC25 TC = 25°C24 A IC90 TC = 90°C12 A ICM TC =

1.32. ixgp12n100u1.pdf Size:84K _igbt

12N10
12N10

VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100U1 1000 V 24 A 3.5 V Combi Pack IXGA/IXGP12N100AU1 1000 V 24 A 4.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220AB(IXGP) VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V G C E VGES Continuous ±20 V VGEM Transient ±30 V TO-263 AA (IXGA) IC25 TC = 25°C24 A IC90 TC = 90°C12 A ICM TC =

1.33. ixgh12n100a.pdf Size:34K _igbt

12N10
12N10

VCES IC25 VCE(sat) Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 1000 V 24 A 3.5 V IXGH 12N100A 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V C (TAB) G C VGEM Transient ±30 V E IC25 TC = 25°C24 A G = Gate C = Collector IC90 TC = 90°C12 A E = Emitter TAB =

1.34. ixgh12n100u1.pdf Size:119K _igbt

12N10
12N10

VCES IC25 VCE(sat) Low VCE(sat) IGBT with Diode High Speed IGBT with Diode IXGH 12N100U1 1000 V 24 A 3.5 V Combi Pack IXGH 12N100AU1 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V C (TAB) G C IC25 TC = 25°C24 A E IC90 TC = 90°C12 A ICM

1.35. ixgh12n100.pdf Size:34K _igbt

12N10
12N10

VCES IC25 VCE(sat) Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 1000 V 24 A 3.5 V IXGH 12N100A 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V C (TAB) G C VGEM Transient ±30 V E IC25 TC = 25°C24 A G = Gate C = Collector IC90 TC = 90°C12 A E = Emitter TAB =

1.36. sdf12n100.pdf Size:155K _solitron

12N10



1.37. ftk12n10s.pdf Size:362K _first_silicon

12N10
12N10

SEMICONDUCTOR FTK12N10S TECHNICAL DATA N-Channel Power MOSFET DESCRIPTION SOP-8 The device uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES D D D D  Green Device Available 8 6 5 7  Special process technology for high ESD capability  High density cell design for ul

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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