15N20 Todos los transistores

 

15N20 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 15N20

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 83 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 133 nS

Conductancia de drenaje-sustrato (Cd): 200 pF

Resistencia drenaje-fuente RDS(on): 0.12 Ohm

Empaquetado / Estuche: TO-252

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15N20 Datasheet (PDF)

1.1. irfu15n20dpbf.pdf Size:225K _upd

15N20
15N20

PD - 95355A IRFR15N20DPbF SMPS MOSFET IRFU15N20DPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.165Ω 17A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-P

1.2. irfr15n20dpbf.pdf Size:225K _upd-mosfet

15N20
15N20

PD - 95355A IRFR15N20DPbF SMPS MOSFET IRFU15N20DPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.165Ω 17A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-P

 1.3. wvm15n20.pdf Size:23K _update_mosfet

15N20

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N20(MTM15N20) Power MOSFET(N-channel) Transistor Features: 1. It’s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of powe

1.4. irfr15n20d.pdf Size:230K _international_rectifier

15N20
15N20

PD - 94245 IRFR15N20D SMPS MOSFET IRFU15N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.165? 17A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR15N

 1.5. 15n20.pdf Size:204K _utc

15N20
15N20

UNISONIC TECHNOLOGIES CO., LTD 15N20 Power MOSFET 15A, 200V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 15N20 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC 15N20 is universally applied in low voltage such as automotive, high efficiency s

1.6. stu15n20 std15n20.pdf Size:148K _samhop

15N20
15N20

STU15N20 Green Product STD15N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Typ Rugged and reliable. 200V 15A 190 @ VGS=10V TO-252 and TO-251 Package. G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK AB

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