15N20 - описание и поиск аналогов

 ..1. Size:204K  utc
 15n20.pdf 

UNISONIC TECHNOLOGIES CO., LTD 15N20 Power MOSFET 15A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N20 is an N-channel enhancement MOSFET using UTC s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC 15N20 is universally applied in low voltage such as automotive, high efficie

 0.1. Size:225K  international rectifier
 irfr15n20dpbf irfu15n20dpbf.pdf 

PD - 95355A IRFR15N20DPbF SMPS MOSFET IRFU15N20DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.165 17A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-P

 0.2. Size:230K  international rectifier
 irfr15n20d.pdf 

PD - 94245 IRFR15N20D SMPS MOSFET IRFU15N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.165 17A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current I

 0.3. Size:85K  njs
 mtm15n20.pdf 

 0.4. Size:148K  samhop
 stu15n20 std15n20.pdf 

STU15N20 Green Product STD15N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Typ Rugged and reliable. 200V 15A 190 @ VGS=10V TO-252 and TO-251 Package. G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK AB

 0.5. Size:23K  shaanxi
 wvm15n20.pdf 

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N20(MTM15N20) Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of powe

 0.6. Size:1603K  cn vbsemi
 irfr15n20dtr.pdf 

IRFR15N20DTR www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.055 at VGS = 10 V 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RA

 0.7. Size:260K  inchange semiconductor
 irfu15n20d.pdf 

isc N-Channel MOSFET Transistor IRFU15N20D FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 0.8. Size:242K  inchange semiconductor
 irfr15n20d.pdf 

isc N-Channel MOSFET Transistor IRFR15N20D, IIRFR15N20D FEATURES Static drain-source on-resistance RDS(on) 165m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt