25N06 Todos los transistores

 ..1. Size:181K  utc
 25n06.pdf

UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET 25A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 25N06 is an N-channel enhancement mode power MOSFET, which provides low gate charge, avalanche rugged technology, and so on. The UTC 25N06 is universally applied in DC-DC & DC-AC converters, motor control, high current, high speed switching, solenoid and relay

 ..2. Size:1143K  goford
 25n06.pdf

 ..3. Size:774K  umw-ic
 25n06.pdf

R UMW UMW 25N06 60V N-Channel Power Mosfet General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 60V,ID =25A RDS(ON),23 m (Typ) @ VGS =10V RDS(ON),30 m (Typ) @ VGS =4.5V Fast Switching Low ON Resistance(Rdson 29m ) Low Gate C

 0.1. Size:1497K  1
 hyg025n06ls1c2.pdf

HYG025N06LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description D D D D D D D D 60V/170A RDS(ON)= 2.1 m (typ.) @ VGS = 10V RDS(ON)= 3.2 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S (RoHS Compliant) Pin1 PDFN8L 5x6 Applications High Frequency Point-of-Load Synchronous B

 0.2. Size:239K  general electric
 rfm25n05 rfm25n06.pdf

 0.3. Size:58K  philips
 php125n06lt 4.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHP125N06LT, PHB125N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 V d Very low on-state resistance Fast switching ID = 75 A Stable off-state characteristics High thermal cycling performance RDS(ON) 8 m (VGS = 5 V) g Low thermal resistance

 0.4. Size:51K  philips
 php125n06t 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHP125N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC)1 75 A features very low on-state

 0.5. Size:56K  philips
 phb125n06l.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHB125N06LT Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting Using trench technology ID Drain current (DC)1 75 A the device fe

 0.6. Size:55K  philips
 phb125n06t 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHB125N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC)1 75 A trench technology the dev

 0.7. Size:377K  st
 stp25n06.pdf

STP25N06 STP25N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP25N06 60 V

 0.8. Size:595K  fairchild semi
 fdp025n06.pdf

July 2008 FDP025N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.5m Features General Description RDS(on) = 1.9m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching p

 0.9. Size:543K  fairchild semi
 fdi025n06.pdf

June 2008 FDI025N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.5m Features General Description RDS(on) = 1.9m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching p

 0.10. Size:167K  vishay
 sqd25n06-22l.pdf

SQD25N06-22L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.022 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.033 Package with Low Thermal Resistance ID (A) 25 100 % Rg and UIS Tested Configuration Single

 0.11. Size:88K  vishay
 sud25n06-45l.pdf

SUD25N06-45L Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET, Logic Level PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 25 60 60 0.045 @ VGS = 4.5 V 22 D TO-252 G Drain Connected to Tab G D S Top View S Order Number SUD25N06-45L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage

 0.12. Size:577K  infineon
 ipd025n06n.pdf

Type IPD025N06N OptiMOSTM Power-Transistor Product Summary Features VDS 60 V Optimized for synchronous rectification RDS(on),max 2.5 mW 100% avalanche tested ID 90 A Superior thermal resistance QOSS 81 nC N-channel, normal level QG(0V..10V) 71 nC Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Haloge

 0.13. Size:185K  infineon
 ipp25n06s3-25.pdf

IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 OptiMOS -T2 Power-Transistor Product Summary V 55 V DS R (SMD version) 24.8 m DS(on),max I 25 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanch

 0.14. Size:167K  infineon
 ipd25n06s4l-30.pdf

IPD25N06S4L-30 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 30 m DS(on),max I 25 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD25N06S4L-30 PG-TO252-3-11 4N06L30 Maximum rat

 0.15. Size:148K  infineon
 ipd25n06s2-40.pdf

IPD25N06S2-40 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 40 m DS(on),max Automotive AEC Q101 qualified I 29 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD25N06S2

 0.16. Size:82K  harris semi
 rf1s25n06.pdf

RFP25N06, RF1S25N06, S E M I C O N D U C T O R RF1S25N06SM 25A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB 25A, 60V SOURCE DRAIN GATE rDS(ON) = 0.047 Temperature Compensating PSPICE Model Peak Current vs Pulse Width Curve DRAIN UIS Rating Curve (FLANGE) +175oC Operating Temperature JED

 0.17. Size:106K  intersil
 rfp25n06 rf1s25n06sm.pdf

RFP25N06, RF1S25N06SM Data Sheet July 1999 File Number 1492.4 25A, 60V, 0.047 Ohm, N-Channel Power Features MOSFETs 25A, 60V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.047 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of sili

 0.18. Size:708K  crhj
 cs25n06 b3.pdf

Silicon N-Channel Power MOSFET R CS25N06 B3 General Description VDSS 60 V CS25N06 B3, the silicon N-channel Enhanced ID 25 A PD(TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 28 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 0.19. Size:696K  crhj
 cs25n06 b8.pdf

Silicon N-Channel Power MOSFET R CS25N06 B8 General Description VDSS 60 V CS25N06 B8, the silicon N-channel Enhanced ID 25 A PD(TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 28 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 0.20. Size:697K  crhj
 cs25n06 b4.pdf

Silicon N-Channel Power MOSFET R CS25N06 B4 General Description VDSS 60 V CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, ID 25 A PD(TC=25 ) 50 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 28 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou power s

 0.21. Size:127K  jdsemi
 cm25n06.pdf

 0.22. Size:871K  cn wxdh
 dhs025n06 dhs025n06e.pdf

DHS025N06/DHS025N06E 180A 60V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V =60V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with R =2.5 m TO-220 DS(on) (TYP) G the RoHS standard. 1 R =2.2 m TO-263 DS(on) (TYP) 3 S 2 Features I =

 0.23. Size:1221K  kexin
 ndt25n06.pdf

SMD Type MOSFET N-Channel MOSFET NDT25N06 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 Features 5.30-0.2 +0.8 0.50 -0.7 VDS (V) = 60V ID = 25 A (VGS = 10V) RDS(ON) 65m (VGS = 10V) 0.127 +0.1 0.80-0.1 max High Current Capability Low Gate Charge + 0.1 2.3 0.60- 0.1 1 Gate +0.15 2.Drain 4 .60 -0.15 2 Drain 3 Source 1.Gate 3.So

 0.24. Size:1447K  hymexa
 hyg025n06ls1p.pdf

HYG025N06LS1P Single N-Channel Enhancement Mode MOSFET Feature Pin Description 60V/160A RDS(ON)= 2.5 m (typ.) @ VGS = 10V RDS(ON)= 3.7 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available (RoHS Compliant) TO-220FB-3L Applications High Frequency Point-of-Load Synchronous Buck Converter Power Tool Application

 0.25. Size:1497K  hymexa
 hyg025n06ls1c2.pdf

HYG025N06LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description D D D D D D D D 60V/170A RDS(ON)= 2.1 m (typ.) @ VGS = 10V RDS(ON)= 3.2 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S (RoHS Compliant) Pin1 PDFN8L 5x6 Applications High Frequency Point-of-Load Synchronous B

 0.26. Size:1175K  matsuki electric
 me25n06 me25n06-g.pdf

ME25N06/ME25N06-G N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 62m @VGS=10V The ME25N06 is the N-Channel logic enhancement mode power RDS(ON) 86m @VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored

 0.27. Size:339K  semihow
 hrld125n06k hrlu125n06k.pdf

Oct 2015 BVDSS = 60 V RDS(on) typ = 10 HRLD125N06K / HRLU125N06K ID = 70 A 60V N-Channel Trench MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HRD125N06K HRU125N06K Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 50 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)

 0.28. Size:161K  semihow
 hrlp125n06k.pdf

Dec2015 BVDSS = 60 V RDS(on) typ = 10 HRLP125N06K ID = 70 A 60V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 50 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 10 (Typ.) @VGS=10V Lower RDS(ON) 12 (Typ.

 0.29. Size:184K  semihow
 hrlf125n06k.pdf

Jan 2016 HRLF125N06K 60V N-Channel Trench MOSFET 8DFN 5x6 FEATURES BVDSS = 60 V ID = 52 A 1 Unrivalled Gate Charge 50 nC (Typ.) Lower RDS(ON) 10 (Typ.) @VGS=10V Lower RDS(ON) 12 (Typ.) @VGS=4.5V 100% Avalanche Tested Absolute Maximum Ratings TJ=25 unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage 2

 0.30. Size:209K  semihow
 hrlo125n06k.pdf

Jan 2016 HRLO125N06K 60V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit High Dense Cell Design BVDSS 60 V Reliable and Rugged ID 10 A Advanced Trench Process Technology RDS(on), typ @10V 12.5 RDS(on), typ @4.5V 14.0 Application Package & Internal Circuit Power Management in Inverter System SOP-8 Synchronous Rectification Absolute Maximum Ratings

 0.31. Size:713K  way-on
 wmb025n06lg4.pdf

WMB025N06LG4 60V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB025N06LG4 uses Wayon's 4th generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN5

 0.32. Size:989K  way-on
 wmk25n06ts.pdf

WMK25N06TS 60V N-Channel Enhancement Mode Power MOSFET Description WMK25N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S Features D G TO-220 V = 60V, I = 25A DS D R

 0.33. Size:628K  way-on
 wmo25n06ts.pdf

WMO25N06TS 60V N-Channel Enhancement Mode Power MOSFET Description WMO25N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain D superior switching performance. S G Features TO-252 V = 60V, I = 25A DS D R

 0.34. Size:648K  way-on
 wmb025n06hg4.pdf

WMB025N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB025N06HG4 uses Wayon's 4th generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN5

 0.35. Size:748K  wuxi china
 cs25n06c4.pdf

Silicon N-Channel Power MOSFET R CS25N06 C4 General Description CS25N06 C4 the silicon N-channel Enhanced VDSS 60 V VDMOSFETs, is obtained by the high density Trench ID 25 A technology which reduce the conduction loss, improve switching PD 36.2 W RDS(ON)Typ 23 m performance and enhance the avalanche energy. This device is suitable for use as a load switch and P

 0.36. Size:697K  wuxi china
 cs25n06b4.pdf

Silicon N-Channel Power MOSFET R CS25N06 B4 General Description VDSS 60 V CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, ID 25 A PD(TC=25 ) 50 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 28 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou power s

 0.37. Size:1968K  allpower
 ap25n06k.pdf

 0.38. Size:725K  allpower
 ap25n06q.pdf

 0.39. Size:870K  cn hunteck
 hgb025n06s hgk025n06s hgp025n06s.pdf

, HGB025N06S HGK025N06S P-1 HGP025N06S 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching TO-263 1.6 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 1.8 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 1.9 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 230 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) Ap

 0.40. Size:774K  cn hunteck
 hga025n06s.pdf

HGA025N06S P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching TO-220F 1.9 RDS(on),typ m Enhanced Body diode dv/dt capability 109 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Drain Pin2 Powe

 0.41. Size:1376K  cn vbsemi
 sud25n06-45l.pdf

SUD25N06-45L www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwis

 0.42. Size:1347K  cn vbsemi
 25n06l-tn3.pdf

25N06L-TN3 www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no

 0.43. Size:674K  cn hmsemi
 hm25n06q.pdf

HM25N06Q Description The HM25N06Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON)

 0.44. Size:462K  cn hmsemi
 hm25n06d.pdf

HM25N06D Description The HM25N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON)

 0.45. Size:242K  inchange semiconductor
 ipd025n06n.pdf

isc N-Channel MOSFET Transistor IPD025N06N, IIPD025N06N FEATURES Static drain-source on-resistance RDS(on) 2.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Optimized for synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou

 0.46. Size:255K  inchange semiconductor
 fdi025n06.pdf

isc N-Channel MOSFET Transistor FDI025N06 FEATURES Drain Current I = 265A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 2.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 0.47. Size:631K  chongqing pingwei
 25n06g.pdf

25N06D&25N06G POWER MOSFET Featutes 25A,60V,R =0.036 @V =10V/12.5A DS(ON)MAX GS Low gate charge Low C iss Fast switching 100% avalanche tested Improved dv/dt capability TO-251(IPAK) TO-252(DPAK) 25N06D 25N06G Absolute Maximum Ratings(T =25 ,unless otherwise noted) C Parameter Symbol 25N06D&25N06G UNIT Drain-Source Voltage V 60 DSS V Gate-Source Vol