All MOSFET. 25N06 Datasheet

 

25N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: 25N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 90 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 25 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 90 nS

Drain-Source Capacitance (Cd): 320 pF

Maximum Drain-Source On-State Resistance (Rds): 0.048 Ohm

Package: TO-220_TO-252

25N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

25N06 Datasheet (PDF)

1.1. sqd25n06-22l.pdf Size:167K _update

25N06
25N06

SQD25N06-22L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) () at VGS = 10 V 0.022 • TrenchFET® Power MOSFET RDS(on) () at VGS = 4.5 V 0.033 • Package with Low Thermal Resistance ID (A) 25 • 100 % Rg and UIS Tested Configuration Single

1.2. fdi025n06.pdf Size:543K _upd-mosfet

25N06
25N06

June 2008 FDI025N06 tm N-Channel PowerTrench® MOSFET 60V, 265A, 2.5mΩ Features General Description • RDS(on) = 1.9mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been • Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching p

 1.3. php125n06t 1.pdf Size:51K _philips2

25N06
25N06

Philips Semiconductors Product specification TrenchMOS? transistor PHP125N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC)1 75 A features very low on-state resistan

1.4. php125n06lt 4.pdf Size:58K _philips2

25N06
25N06

Philips Semiconductors Product specification TrenchMOS? transistor PHP125N06LT, PHB125N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 V d Very low on-state resistance Fast switching ID = 75 A Stable off-state characteristics High thermal cycling performance RDS(ON) ? 8 m? (VGS = 5 V) g Low thermal resistance RDS(ON) ? 7 m? (VGS = 1

 1.5. phb125n06l.pdf Size:56K _philips2

25N06
25N06

Philips Semiconductors Product specification TrenchMOS? transistor PHB125N06LT Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting Using trench technology ID Drain current (DC)1 75 A the device features ve

1.6. phb125n06t 1.pdf Size:55K _philips2

25N06
25N06

Philips Semiconductors Product specification TrenchMOS? transistor PHB125N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC)1 75 A trench technology the device Ptot

1.7. stp25n06.pdf Size:377K _st

25N06
25N06

STP25N06 STP25N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP25N06 60 V < 0.065 ? 25 A STP25N06FI 60 V < 0.065 ? 16 A TYPICAL R = 0.048 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 1 1 HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED TO-2

1.8. fdi025n06.pdf Size:545K _fairchild_semi

25N06
25N06

June 2008 FDI025N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.5m? Features General Description RDS(on) = 1.9m? ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

1.9. fdp025n06.pdf Size:595K _fairchild_semi

25N06
25N06

July 2008 FDP025N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.5m? Features General Description RDS(on) = 1.9m? ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

1.10. sud25n06-45l.pdf Size:88K _vishay

25N06
25N06

1.11. ipd025n06n.pdf Size:577K _infineon

25N06
25N06

Type IPD025N06N OptiMOSTM Power-Transistor Product Summary Features VDS 60 V • Optimized for synchronous rectification RDS(on),max 2.5 mW • 100% avalanche tested ID 90 A • Superior thermal resistance QOSS 81 nC • N-channel, normal level QG(0V..10V) 71 nC • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Haloge

1.12. ipp25n06s3-25.pdf Size:185K _infineon

25N06
25N06

IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 OptiMOS®-T2 Power-Transistor Product Summary V 55 V DS R (SMD version) 24.8 mΩ DS(on),max I 25 A D Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanch

1.13. ipd25n06s4l-30 ds 10.pdf Size:167K _infineon

25N06
25N06

IPD25N06S4L-30 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS R 30 m? DS(on),max I 25 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD25N06S4L-30 PG-TO252-3-11 4N06L30 Maximum ratings, at T =25 C, u

1.14. ipd25n06s2-40 green.pdf Size:148K _infineon

25N06
25N06

IPD25N06S2-40 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 40 m? DS(on),max Automotive AEC Q101 qualified I 29 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD25N06S2-40 PG-TO252-3-11 2N06

1.15. 25n06.pdf Size:181K _utc

25N06
25N06

UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET 25A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 25N06 is an N-channel enhancement mode power MOSFET, which provides low gate charge, avalanche rugged technology, and so on. The UTC 25N06 is universally applied in DC-DC & DC-AC converters, motor control, high current, high speed switching, solenoid and relay dri

1.16. rfp25n06 rf1s25n06sm.pdf Size:106K _intersil

25N06
25N06

RFP25N06, RF1S25N06SM Data Sheet July 1999 File Number 1492.4 25A, 60V, 0.047 Ohm, N-Channel Power Features MOSFETs • 25A, 60V These N-Channel power MOSFETs are manufactured using • rDS(ON) = 0.047Ω the MegaFET process. This process, which uses feature • Temperature Compensating PSPICE® Model sizes approaching those of LSI integrated circuits gives optimum utilization of sili

1.17. 25n06.pdf Size:1143K _goford

25N06
25N06

GOFORD 25N06 DESCRIPTION The 25N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDSS R DS(ON) ID Schematic diagram @ 10V (typ) 60V 18 m Ω 25 A ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current

1.18. cs25n06 b8.pdf Size:696K _crhj

25N06
25N06

Silicon N-Channel Power MOSFET R ○ CS25N06 B8 General Description: VDSS 60 V CS25N06 B8, the silicon N-channel Enhanced ID 25 A PD(TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 28 mΩ which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

1.19. cs25n06 b4.pdf Size:697K _crhj

25N06
25N06

Silicon N-Channel Power MOSFET R ○ CS25N06 B4 General Description: VDSS 60 V CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, ID 25 A PD(TC=25℃) 50 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 28 mΩ the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou power s

1.20. cs25n06 b3.pdf Size:708K _crhj

25N06
25N06

Silicon N-Channel Power MOSFET R ○ CS25N06 B3 General Description: VDSS 60 V CS25N06 B3, the silicon N-channel Enhanced ID 25 A PD(TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 28 mΩ which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

1.21. cm25n06.pdf Size:127K _jdsemi

25N06
25N06

R CM25N06 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆60V N-Channel Trench-MOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于电源、适配器等功率开关电路 2.主要特点 开关速度快 驱动简单,可并联使用 3.封装外形 TO-220A 4

1.22. ndt25n06.pdf Size:1221K _kexin

25N06
25N06

SMD Type MOSFET N-Channel MOSFET NDT25N06 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 ■ Features 5.30-0.2 +0.8 0.50 -0.7 ● VDS (V) = 60V ● ID = 25 A (VGS = 10V) ● RDS(ON) < 65mΩ (VGS = 10V) 0.127 +0.1 0.80-0.1 max ● High Current Capability ● Low Gate Charge + 0.1 2.3 0.60- 0.1 1 Gate +0.15 2.Drain 4 .60 -0.15 2 Drain 3 Source 1.Gate 3.So

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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