60N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

UNISONIC TECHNOLOGIES CO., LTD 60N06 Power MOSFET 60A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) = 18m @VGS = 10 V * Ultra low gate charge (

GOFORD60N06Description The NCE6050KA advanced trench technology and The 60N06 uses uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @10V (Typ)60V m 18 14m 60A High density cell design fo

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 60N06DESCRIPTIONDrain Current I = 60A@ T =25D CStatic Drain-Source On-Resistance: R = 18m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSGeneral purpose power amplifierHigh current,high speed switchingSolenoid and relay

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP60N06HD/DDesigner's Data SheetMTP60N06HDHDTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced highcell density HDTMOS power FET is 60 AMPERESdesigned to withstand high energy in the avalanche and commuta- 60 VOLTS tio

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB60N06HD/DDesigner's Data SheetMTB60N06HDHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FET60 AMPERESNChannel EnhancementMode Silicon Gate60 VOLTS The D2PAK package has the capability of housing a larger dieRDS(on) = 0.014 OHMthan any existing sur

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB60N06HD/DDesigner's Data SheetMTB60N06HDHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FET60 AMPERESNChannel EnhancementMode Silicon Gate60 VOLTS The D2PAK package has the capability of housing a larger dieRDS(on) = 0.014 OHMthan any existing sur

Philips Semiconductors Product specification TrenchMOS transistor PHP60N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 58 Afeatures very low on-state r

Philips Semiconductors Product specification TrenchMOS transistor PHP60N06LT, PHB60N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 58 A Stable off-state characteristics High thermal cycling performance RDS(ON) 20 m (VGS = 5 V)g Low thermal resistance

Philips Semiconductors Product specification TrenchMOS transistor PHB60N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 58 Atrench technology the devic

Philips Semiconductors Product specification TrenchMOS transistor PHP60N06LT, PHB60N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 58 A Stable off-state characteristics High thermal cycling performance RDS(ON) 20 m (VGS = 5 V)g Low thermal resistance

STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V

STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V

www.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.com

STB60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTB60N06-14 60 V

SUP60N06-12PVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition60 0.012 at VGS = 10 V60d 33 TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB Synchronous Rectifier

SUP60N06-12PVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition60 0.012 at VGS = 10 V60d 33 TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB Synchronous Rectifier

SQM60N06-15www.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.015 TrenchFET Power MOSFETID (A) 56 Package with Low Thermal Resistance AEC-Q101 QualifieddConfiguration Single 100 % Rg and UIS TestedD Charac

SUP/SUB60N06-18Vishay SiliconixN-Channel 60-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)60 0.018 60TO-220ABDTO-263DRAIN connected to TAB GG D SG D STop ViewTop ViewSSUB60N06-18SUP60N06-18N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 60VVGate-Sourc

SQM60N06-15Vishay SiliconixAutomotiveN-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.015 TrenchFET Power MOSFETID (A) 56 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 Qualifiedd Characterization OngoingD Compliant to RoHS D

SQP60N06-15www.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.015 AEC-Q101 QualifieddID (A) 56 100 % Rg and UIS TestedConfiguration Single Material categorization:DTO-220AB For definitions of complianc

Type IPB260N06N3 G IPP260N06N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 60 VDS Ideal for high frequency switching and sync. rec.R 26mDS(on),max Optimized technology for DC/DC convertersI 27 AD Excellent gate charge x R product (FOM)DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualifie

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-Transistor, 60 VIPA060N06NData SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM Power-Transistor, 60 VIPA060N06NTO-220-FP1 DescriptionFeatures Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel

TypeIPP060N06NOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 6.0 mW Superior thermal resistanceID 45 A N-channelQOSS nC 32 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 27 Pb-free lead plating; RoHS compliant Hal

IPA060N06NM5SMOSFETPG-TO 220 FPOptiMOSTM 5 Power-Transistor, 60 VFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationQualified

OM60N06SA OM60N05SA OM50N06STOM50N06SA OM50N05SA OM50N05STLOW VOLTAGE, LOW RDS(on) POWER MOSFETSIN HERMETIC ISOLATED PACKAGE50V And 60V Ultra Low RDS(on)Power MOSFETs In TO-257 And TO-254Isolated PackagesFEATURES Isolated Hermetic Metal Packages Ultra Low RDS(on) Low Conductive Loss/Low Gate Charge Available Screened To MIL-S-19500, TX, TXV And S Levels Ce

NTP60N06L, NTB60N06LPower MOSFET60 Amps, 60 Volts,Logic LevelN-Channel TO-220 and D2PAKhttp://onsemi.comDesigned for low voltage, high speed switching applications in60 AMPERES, 60 VOLTSpower supplies, converters, power motor controls and bridge circuits.RDS(on) = 16 mWFeaturesN-Channel Pb-Free Packages are AvailableDTypical Applications Power Supplies C

NTP60N06, NTB60N06Power MOSFET60 V, 60 A, N-ChannelTO-220 and D2PAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.60 VOLTS, 60 AMPERESFeaturesRDS(on) = 14 mW Pb-Free Packages are AvailableN-ChannelDTypical Applications Power Supplies Converters Pow

NTB60N06, NVB60N06Power MOSFET60 V, 60 A, N-Channel D2PAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits. http://onsemi.comFeatures60 VOLTS, 60 AMPERES AEC-Q101 Qualified and PPAP Capable - NVB60N06RDS(on) = 14 mW These Devices are Pb-Free and are RoHS CompliantN-ChannelTypical App

UNISONIC TECHNOLOGIES CO., LTD 60N06 Power MOSFET 60A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) = 18m @VGS = 10 V * Ultra low gate charge (

UNISONIC TECHNOLOGIES CO., LTD UTT60N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed and low thermal resistance. usually used at telecom and computer applications. FEATURES * RDS(ON) = 18m @VGS = 10 V * Fast s

TSM60N06 60V N-Channel Power MOSFET TO-252 PRODUCT SUMMARY Pin Definition: (DPAK) 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 60 7.3 @ VGS =10V 66 Features Block Diagram Advanced Trench Technology Low RDS(ON) 7.3m (Max.) Low gate charge typical @ 81nC (Typ.) Low Crss typical @ 339pF (Typ.) Ordering Information Part No. Packag

KF60N06PSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description AThis planar stripe MOSFET has better characteristics, such as fastOCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERSGcorrection , electronic lamp ballasts based on half

CEP60N06G/CEB60N06GN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 60A, RDS(ON) = 16m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMP60N06N-channel 60V, 60A, TO-220 Power MOSFETN-channel 60V, 60A, TO-220 Power MOSFETN-channel 60V, 60A, TO-220 Power MOSFET N-channel 60V, 60A, TO-2

Spec. No. : C708J3 Issued Date : 2009.04.29 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 60VMTB60N06J3 ID 16A35m(typ.) RDSON(MAX)@VGS=10V, ID=10A 40m(typ.) RDSON(MAX)@VGS=5V, ID=8A Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalen

Spec. No. : C708L3 Issued Date : 2009.05.26 CYStech Electronics Corp.Revised Date : 2013.10.30 Page No. : 1/8 N -Channel Enhancement Mode Power MOSFET BVDSS 60VMTB60N06L3 ID 5.9A41m (typ) RDSON@VGS=10V, ID=5A 46m (typ) RDSON@VGS=4.5V, ID=3A Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circui

Spec. No. : C708I3 Issued Date : 2014.04.30 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N -Channel Enhancement Mode Power MOSFET BVDSS 60VMTB060N06I3 ID 16ARDSON(MAX)@VGS=10V, ID=10A 35m(typ.) RDSON(MAX)@VGS=5V, ID=8A 40m(typ.) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Cir

Shantou Huashan Electronic Devices Co.,Ltd. HFP60N06 N-Channel Enhancement Mode Field Effect Transistor Applications TO-220 Servo motor control. Power MOSFET gate drivers. DC/DC converters Other switching applications. 1- G 2-D 3-S Features 60A, 60V(See Note), RDS(on)

Silicon N-Channel Power MOSFET R CS60N06 C4 General Description VDSS 60 V CS60N06 C4, the silicon N-channel Enhanced ID 55 A PD(TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

DH60N0660A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 10.3mDS(on) (TYP)standard.13 SI = 60AD2 Features Low on resistance Low gate charge Fast switching

N N-CHANNEL MOSFET FHP60N06B MAIN CHARACTERISTICS FEATURES ID 60 A Low gate charge VDSS 60 V Crss ( 200pF) Low Crss (typical 200pF ) Rdson-typ @Vgs=10V 18m Fast switching Qg-typ 27nC 100% 100% avalanche tested dv/dt Improved dv

Datasheet 60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUD6 General Description Symbol The SRE60N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSUD6 package is TO-247. Figure 1 Symbol of SRE60N

Datasheet 60A 650V Trench Fieldstop IGBT with SiC SBD SRE60N065FSU2S8 General Description Symbol The SRE60N065FSU2S8 is a Field Stop Trench IGBT with SiC SBD, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSU2S8 package is TO-247. Figure 1 Symbol of SRE60N065FSU2S8 Features

Datasheet 60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUDG General Description Symbol The SRE60N065FSUDG is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSUDG package is TO-247. Figure 1 Symbol of SRE60N06

Preliminary Datasheet 160A 650V Trench Fieldstop IGBT with FRD SRE160N065FSUD8 General Description Symbol The SRE160N065FSUD8 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low conduction loss, high energy efficiency for switching applications such as Inverter, Driver, Converter, etc. The SRE160N065FSUD8 package is TO-247Plus. Features Figure 1 Sy

Datasheet 60A 650V Trench Fieldstop IGBT SRE60N065FSU General Description Symbol The SRE60N065FSU is a Field Stop Trench CIGBT, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. GThe SRE60N065FSU package is TO-247. EFeatures High Breakdown Voltage to 650V Figure 1 Symbol of SRE60N065

SL60N06N-Channel Power MOSFET General Features VDS =60V,ID =60A RDS(ON)

Silicon N-Channel Power MOSFET R CS60N06 C4 General Description VDSS 60 V CS60N06 C4, the silicon N-channel Enhanced ID 55 A PD(TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

HGS060N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level4.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability5.8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness17 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPSSOIC-8 Hard Swit

WSF60N06 N-Ch MOSFETGeneral Description Product SummeryThe WSF60N06 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 60V 10m 60Agate charge for most of the synchronous buck converter applications . Applications The WSF60N06 meet the RoHS and Green High Frequency Point-of-Load Synchronous

WSR60N06 N-Ch MOSFETGeneral Description Product SummeryThe WSR60N06 uses advanced trench technology BVDSS RDSON ID and design to provide excellent R with low DS(ON) 60V 12m 60Agate charge. It can be used in a wide variety of applications. Application Power switching application LED backlighting Uninterruptible power supplyFeatures High density cell

MTP60N06HDwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50DTO-220ABGSDSGN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim

NTB60N06Gwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Sourc

VBZM60N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS 60V TrenchFET Power MOSFETRDS(on) VGS = 10 V 5 m Material categorization:ID 120AConfiguration SingleTO-220ABDGSN-Channel MOSFETG D SABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-So

VBZL60N06www.VBsemi.comN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction Temperature TrenchFET Power MOSFETVDS 60VRDS(on) VGS = 10 V 11mRDS(on) VGS = 4.5 V 12 m75ID AConfiguration SingleDD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitV

NTP60N06www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50DTO-220ABGSDSGN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit

EMB60N06Awww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters

STB60N06-14www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Sou

S60N06MSI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures ApplicationsV =60V,I =60ADS DDC Motor ControlRds(on)(typ)=10.5m@Vgs=4.5VDC-DC ConvertersRds(on)(typ)=8.5m@Vgs=10VBMS100% Avalanche TestedSMPS100% Rg TestedAutomotive EnvironmentLead-Free (RoHS Compliant)Internal Circuit and Pin Descript

HM60N06KDescription The HM60N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =60A RDS(ON)

HM60N06Description The HM60N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =60A RDS(ON)

HMS60N06D N-Channel Super Trench Power MOSFET Description The HMS60N06D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) ghigh-frequency switching and synchronous re

HAOHAI ELECTRONICS HPD160N06STAProduct Summary50A, 60VVDS60 VN-CHANNEL POWER MOSFETRDS(ON) Max.16 m FeaturesAdvanced process technologyID50 AUltra low On-Resistance150 Operating TemperatureFast Switching2.DrainRepetitive Avalanche Allowed up to TjmaxLead-Free D Mechanical DataCaseTO-252Case MaterialMolded PlasticGreenMolding1.

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 60N06-18DESCRIPTIONHigh current capabilityAvalanche rugged technologyLow gate chargeFast Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSRegulatorHigh current,high speed switchingSolenoid and relay driversABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP60N06-14FEATURESWith low gate drive requirementsEasy to driveHigh current capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenold and relay dirversDC-DC convertersAutomotive environmentABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA060N06NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP060N06NIIPP060N06NFEATURESStatic drain-source on-resistance:RDS(on) 6.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE M

isc N-Channel MOSFET Transistor 60N06-14DESCRIPTIONHigh current capabilityAvalanche rugged technologyLow gate chargeFast Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSRegulatorHigh current,high speed switchingSolenoid and relay driversABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL ARAMETER V