60N08 Todos los transistores

 ..1. Size:181K  utc
 60n08.pdf

UNISONIC TECHNOLOGIES CO., LTD 60N08 Preliminary Power MOSFET 60 Amps, 80 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N08 is an N-channel power MOSFET adopting UTC s advanced planar stripe and DMOS technology to provide designers with perfectly high switching speed and minimum on-state resistance. It also can withstand high energy pulse in the avalanche and commutati

 0.1. Size:1538K  1
 mcac60n08y-tp.pdf

MCAC60N08Y Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 80 V IGSS VDS=0V, VGS = 20V Gate-Source Leakage Current 100 nA IDSS VDS=64V, VGS=0V Zero Gate Voltage Drain Current 1 A VGS(th) VDS=VGS, ID=250 A Gate-Threshold Voltage 2

 0.2. Size:781K  fairchild semi
 fqa160n08.pdf

September 2000 TM QFET QFET QFET QFET FQA160N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 160A, 80V, RDS(on) = 0.007 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 220 nC) planar stripe, DMOS technology. Low Crss ( typical 530 pF) This advanced technology has

 0.3. Size:402K  samsung
 ssh60n08.pdf

SSH60N10 PCB 24

 0.4. Size:133K  ixys
 ixtp160n085t.pdf

Advance Technical Information IXTQ 160N085T VDSS = 85 V Trench Gate IXTA 160N085T ID25 = 160 A Power MOSFET IXTP 160N085T RDS(on) = 6.0 m N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C85 V G VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V D (TAB) S VGSM 20 V TO-220 (IXTP) ID25 TC = 25 C 160 A IDRM

 0.5. Size:1538K  mcc
 mcac60n08y.pdf

MCAC60N08Y Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 80 V IGSS VDS=0V, VGS = 20V Gate-Source Leakage Current 100 nA IDSS VDS=64V, VGS=0V Zero Gate Voltage Drain Current 1 A VGS(th) VDS=VGS, ID=250 A Gate-Threshold Voltage 2

 0.6. Size:2434K  onsemi
 fqa160n08.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.7. Size:848K  jilin sino
 jcs160n08.pdf

N N-CHANNEL MOSFET JCS160N08I Package MAIN CHARACTERISTICS ID 160A VDSS 80V Rdson-max - 5.8m (@Vgs=10V Qg-typ 133nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automoti

 0.8. Size:1172K  jilin sino
 jcs160n08i.pdf

N N-CHANNEL MOSFET JCS160N08I Package MAIN CHARACTERISTICS ID 160A VDSS 80V Rdson-max - 5.5m (@Vgs=10V Qg-typ 133nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automoti

 0.9. Size:457K  jilin sino
 ajcs160n08i.pdf

N N-CHANNEL MOSFET AJCS160N08I Package MAIN CHARACTERISTICS ID 160A VDSS 80V Rdson-max - 5.5m (@Vgs=10V Qg-typ 133nC APPLICATIONS DC/DC High power DC/DC converters and switch mode power supplies DC motor control

 0.10. Size:1297K  blue-rocket-elect
 brcs060n08hzc.pdf

BRCS060N08HZC Rev.A Jun.-2021 DATA SHEET / Descriptions PDFN5 6 N N-Channel MOSFET in a PDFN5 6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss, low Gate Charge for fast switching, Low Thermal resistance,

 0.11. Size:1336K  cn wxdh
 dh060n08 dh060n08f dh060n08i dh060n08e dh060n08b dh060n08d.pdf

DH060N08/DH060N08F/DH060N08I DH060N08E/DH060N08B/DH060N08D 81A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 6.0m DS(on) (TYP) standard. 1 3 S I = 81A D 2 Features Low on resist

 0.12. Size:627K  hymexa
 hyg060n08ns1p hyg060n08ns1b.pdf

HYG060N08NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/105A RDS(ON)=5.5 m (typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Switching application Power management for inverter systems Motor control N-Channel MOSFET

 0.13. Size:871K  hymexa
 hyg060n08ns1d hyg060n08ns1u hyg060n08ns1v.pdf

HYG060N08NS1D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/80A RDS(ON)=5.7 m (typ.)@VGS = 10V 100% Avalanche Tested S Reliable and Rugged D S G D G Lead-Free and Green Devices Available S D (RoHS Compliant) G TO-252-2L TO-251-3L TO-251-3S Applications Switching application Power management for inverter systems N-Ch

 0.14. Size:507K  way-on
 wmk060n08hg2.pdf

WMK060N08HG2 80V N-Channel Enhancement Mode Power MOSFET Description WMK060N08HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 80V, I = 95A

 0.15. Size:608K  way-on
 wmq060n08lg2.pdf

WMQ060N08LG2 80V N-Channel Enhancement Mode Power MOSFET D D Description D D D D D D WMQ060N08LG2 uses Wayon's 2nd generation power trench S G S S MOSFET technology that has been especially tailored to minimize the S S G S on-state resistance and yet maintain superior switching performance. PDFN3030-8L This device is well suited for high efficiency fast switching app

 0.16. Size:532K  way-on
 wmb060n08lg2.pdf

WMB060N08LG2 80V N-Channel Enhancement Mode Power MOSFET Description D D D WMB060N08LG2 uses Wayon's 2nd generation power trench MOSFET DD D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN506

 0.17. Size:705K  way-on
 wmb060n08hg2.pdf

WMB060N08HG2 80V N-Channel Enhancement Mode Power MOSFET Description D D D WMB060N08HG2 uses Wayon's 2nd generation power trench MOSFET DD D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN5060-

 0.18. Size:502K  cn anhi
 aua060n08ag aub060n08ag aup060n08ag aun060n08ag aud060n08ag.pdf

AUA 8AG, AU N08AG, AUP060 G, A060N08 UB060N 0N08AG AUN 8AG, AU N08AG N060N08 UD060N MO con N-Chan OSFET Silic nnel MOS 1. Applicatio ons Synchronou on in SMPS, us rectificatio Hard switch h speed circu hing and High uit DC/DC in te elecoms and inductrial 2. Features Low drain-s sistance RD 6m (typ.) source on-res DS(ON) = 5.6 High speed power switc ching Enhance

 0.19. Size:445K  cn wuxi unigroup
 tmb160n08a tmp160n08a.pdf

TMB160N08A,TMP160N08A Wuxi Unigroup Microelectronics CO.,LTD. 80V N-Channel Trench MOSFET Product Summary Features Trench Power Technology VDS 80V Low RDS(ON) RDS(ON) (at VGS=10V)

 0.20. Size:892K  cn hmsemi
 hm60n08.pdf

HM60N08 N-Channel Enhancement Mode Power MOSFET Description The HM60N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =60A RDS(ON)

 0.21. Size:1760K  cn apm
 ap160n08p ap160n08t.pdf

AP160N08PIT 85V N-Channel Enhancement Mode MOSFET Description The AP160N08P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =160A DS D R