UNISONIC TECHNOLOGIES CO., LTD 60N08 Preliminary Power MOSFET 60 Amps, 80 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N08 is an N-channel power MOSFET adopting UTCs advanced planar stripe and DMOS technology to provide designerswith perfectly high switching speed and minimum on-state resistance. It also can withstand high energy pulse in the avalanche and commutati

MCAC60N08YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 80 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=64V, VGS=0VZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250AGate-Threshold Voltage 2

September 2000TMQFETQFETQFETQFETFQA160N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 160A, 80V, RDS(on) = 0.007 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 220 nC)planar stripe, DMOS technology. Low Crss ( typical 530 pF)This advanced technology has

SSH60N10 PCB24

Advance Technical InformationIXTQ 160N085T VDSS = 85 VTrench GateIXTA 160N085T ID25 = 160 APower MOSFETIXTP 160N085T RDS(on) = 6.0 mN-Channel Enhancement ModeTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C85 VGVDGR TJ = 25C to 175C; RGS = 1 M 85 VD(TAB)SVGSM 20 VTO-220 (IXTP)ID25 TC = 25C 160 AIDRM

MCAC60N08YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 80 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=64V, VGS=0VZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250AGate-Threshold Voltage 2

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

N N-CHANNEL MOSFET JCS160N08I Package MAIN CHARACTERISTICS ID 160A VDSS 80V Rdson-max - 5.8m (@Vgs=10V Qg-typ 133nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automoti

N N-CHANNEL MOSFET JCS160N08I Package MAIN CHARACTERISTICS ID 160A VDSS 80V Rdson-max - 5.5m (@Vgs=10V Qg-typ 133nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automoti

N N-CHANNEL MOSFET AJCS160N08I Package MAIN CHARACTERISTICS ID 160A VDSS 80V Rdson-max - 5.5m (@Vgs=10V Qg-typ 133nC APPLICATIONS DC/DC High power DC/DC converters and switch mode power supplies DC motor control

BRCS060N08HZC Rev.A Jun.-2021 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low RDS(ON) to minimize conductive loss, low Gate Charge for fast switching, Low Thermal resistance,

DH060N08/DH060N08F/DH060N08IDH060N08E/DH060N08B/DH060N08D81A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 80VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 6.0mDS(on) (TYP)standard.13 SI = 81AD2 Features Low on resist

HYG060N08NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/105A RDS(ON)=5.5 m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Switching application Power management for inverter systems Motor control N-Channel MOSFET

HYG060N08NS1D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/80A RDS(ON)=5.7 m(typ.)@VGS = 10V 100% Avalanche Tested S Reliable and Rugged D SG D GLead-Free and Green Devices Available SD (RoHS Compliant) GTO-252-2L TO-251-3L TO-251-3S Applications Switching application Power management for inverter systems N-Ch

WMK060N08HG2 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMK060N08HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDGFeatures TO-220 V = 80V, I = 95A

WMQ060N08LG2 80V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDDDD DWMQ060N08LG2 uses Wayon's 2nd generation power trench SGSSMOSFET technology that has been especially tailored to minimize the SSGSon-state resistance and yet maintain superior switching performance. PDFN3030-8LThis device is well suited for high efficiency fast switching app

WMB060N08LG2 80V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB060N08LG2 uses Wayon's 2nd generation power trench MOSFET DDDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN506

WMB060N08HG2 80V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB060N08HG2 uses Wayon's 2nd generation power trench MOSFET DDDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060-

TMB160N08A,TMP160N08A Wuxi Unigroup Microelectronics CO.,LTD. 80V N-Channel Trench MOSFET Product Summary Features Trench Power Technology VDS 80V Low RDS(ON) RDS(ON) (at VGS=10V)

HM60N08N-Channel Enhancement Mode Power MOSFET Description The HM60N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =60A RDS(ON)