7N10 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 7N10
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 60 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Encapsulados: TO-251 TO-252 SOT-223
Búsqueda de reemplazo de 7N10 MOSFET
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7N10 datasheet
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SMD Type MOSFET N-Channel MOSFET KI7N10DY SOP-8 Features VDS (V) = 100V ID = 7A (VGS = 10V) 1.50 0.15 RDS(ON) 350m (VGS = 10V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 Continuous Drain Current I
wmb037n10hgs.pdf
WMB037N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMB037N10HGS uses Wayon's advanced power trench MOSFET G ss technology that has been especially tailored to minimize the on-state s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8
wml07n100c2 wmn07n100c2 wmm07n100c2 wmj07n100c2 wmo07n100c2 wmp07n100c2 wmk07n100c2.pdf
WM 2, WMN07N MM07N100C ML07N100C2 N100C2, WM C2 WMJ07N100C2, WM C2, WMP07N MK07N100C MO07N100C N100C2, WM C2 1000V Super Ju MOSFET V 2.0 S unction Power M T Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G and low
wmm037n10hgs.pdf
WMM037N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMM037N10HGS uses Wayon's advanced power trench MOSFET D technology that has been especially tailored to minimize the on-state G resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. TO-263 Features V = 100V, I = 170A
wml07n105c2 wmn07n105c2 wmm07n105c2 wmj07n105c2 wmo07n105c2 wmp07n105c2 wmk07n105c2.pdf
WM 2, WMN07N MM07N105C ML07N105C2 N105C2, WM C2 WMJ07N105C2, WM C2, WMP07N MK07N105C MO07N105C N105C2, WM C2 1050V Super Ju MOSFET V 2.0 S unction Power M T Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G and low
wmk037n10hgs.pdf
WMK037N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMK037N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S Features D G TO-220 V = 100V, I = 170A
wmt07n10ts.pdf
WMT07N10TS 100V N-Channel Enhancement Mode Power MOSFET Description WMT07N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 6.8A DS D R
wmll017n10hgs.pdf
WMLL017N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D WMLL017N10HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications.
hgb037n10s hgk037n10s hgp037n10s.pdf
HGB037N10S HGK037N10S P-1 , HGP037N10S 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 2.8 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 3 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 3.1 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 190 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) Ap
hgb037n10t hgp037n10t hga037n10t.pdf
HGB037N10T HGP037N10T P-1 , HGA037N10T 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Smooth Switching 3.7 RDS(on),max mW Enhanced Body diode dv/dt capability 168 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power Tools
hgb017n10s.pdf
HGB017N10S P-1 100V N-Ch Power MOSFET Feature High Speed Power Switching 100 V VDS Enhanced Body diode dv/dt capability 1.4 RDS(on),typ mW Enhanced Avalanche Ruggedness 354 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 240 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectification in SMPS Hard Switching and High S
hgn077n10sl.pdf
HGN077N10SL P-1 100V N-Ch Power MOSFET 100 V VDS Feature 6.4 RDS(on),typ VGS=10V m Optimized for high speed switching,Logic level 7.8 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 86 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application DC-
hgb027n10a hgk027n10a hgp027n10a.pdf
HGB027N10A , P-1 HGK027N10A HGP027N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching RDS(on),typ TO-263 VGS=10V 2.2 mW Enhanced Body diode dv/dt capability RDS(on),typ TO-247 VGS=10V 2.4 mW Enhanced Avalanche Ruggedness RDS(on),typ TO-220 VGS=10V 2.5 mW 100% UIS Tested, 100% Rg Tested 248 A ID (Sillicon Limited) Lead Free, Halogen Free
hgd077n10sl hgi077n10sl.pdf
HGD077N10SL , HGI077N10SL P-1 100V N-Ch Power MOSFET 100 V VDS Feature 6.4 RDS(on),typ VGS=10V m Optimized for high speed switching,Logic level 7.8 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 105 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 70 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Appli
hgb027n10s hgk029n10s hgp030n10s.pdf
, P-1 HGB027N10S HGK029N10S HGP030N10S 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 2.25 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 2.42 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 2.50 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 260 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) App
wsf07n10.pdf
WSF07N10 N-Ch MOSFET Product Summery General Description The WSF07N10 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell 195m 7A density , which provide excellent RDSON and 100V gate charge for most of the synchronous buck converter applications . Applications The WSF07N10 meet the RoHS and Green High Frequency Point-of-Load Synchronou
fqd7n10l.pdf
FQD7N10L www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS
hm17n10k.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)
sfd347n100c2.pdf
SFD347N100C2 Trench N-MOSFET 100V, 30m , 36A Features Product Summary Extremely low on-resistance RDS(on) VDS 100V Excellent QgxRDS(on) product(FOM) RDS(on) typ. 30m Qualified according to JEDEC criteria ID 36A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested 100%
sfp60n100 sfb60n100 sfp350n100c2 sfb347n100c2.pdf
SFP60N100,SFB60N100 SFP350N100C2,SFB347N100C2 N-MOSFET 100V, 30m , 36A Features Product Summary Extremely low on-resistance RDS(on) VDS 100V Excellent QgxRDS(on) product(FOM) RDS(on) typ. 30m Qualified according to JEDEC criteria ID 36A Applications 100% DVDS Tested Motor control and drive 100% Avalanche Tested Battery management UPS (Uninterrupible
sfp080n100ac2 sfb077n100ac2.pdf
SFP080N100AC2,SFB077N100AC2 N-MOSFET 100V, 6.5m , 110A Features Product Summary Low On-Resistance VDS 100V Fast Switching RDS(on) typ. 6.5m 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax ID 110A Lead-Free, RoHS Compliant 100% DVDS Tested Applications Power management for inverter systems 100% Avalanche Tested Synchronous rectification SFP08
sfp040n100c3 sfb037n100c3.pdf
SFP040N100C3,SFB037N100C3 N-MOSFET 100V, 3.2m , 120A Features Product Summary Enhancement Mode VDS 100V Very Low On-Resistance RDS(on) 3.2m Fast Switching ID 120A 100% DVDS Tested Applications 100% Avalanche Tested Light Electric Vehicles Motor Control and Drive DC/DC Converter,and Genneral Purpose Applications SFP040N100C3 SFB037N100C3 Package Mark
sfp030n100c3 sfb027n100c3.pdf
SFP030N100C3, SFB027N100C3 N-MOSFET 100V, 2.5m , 190A Product Summary Feature High Speed Power Switching VDS 100V Enhanced Body diode dv/dt capability RDS(on) 2.5m Enhanced Avalanche Ruggedness ID 190A 100% DVDS Tested Application Synchronous Rectification in SMPS 100% Avalanche Tested Hard Switching and High Speed Circuit 100% Avalanche Tested 100%
sfw027n100c3.pdf
SFW027N100C3 N-MOSFET 100V, 2.2m , 190A Feature Product Summary High Speed Power Switching VDS 100V Enhanced Body diode dv/dt capability RDS(on) typ. 2.2m Enhanced Avalanche Ruggedness ID 190A 100% DVDS Tested Application 100% Avalanche Tested Synchronous Rectification in SMPS Hard Switching and High Speed Circuit DC/DC in Telecoms and Inductrial D
fxn07n10ns.pdf
FuXin Semiconductor Co., Ltd. Rev.A FXN07N10NS Features General Description The FXN07N10NS uses advanced Silicon s MOSFET Technology, VDS = 100V ID = 7A @VGS = 10V which provides high performance in on-state resistance, fast Very low on-resistance switching performance, and excellent quality. RDS(ON)
ipb027n10n5.pdf
Isc N-Channel MOSFET Transistor IPB027N10N5 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
ipb027n10n3.pdf
Isc N-Channel MOSFET Transistor IPB027N10N3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
Otros transistores... 25N10, 30N06, 50N06, 60N06, 60N08, 6N10, 70N06, 75N75, AOD4184A, 7N10Z, 80N08, UF1010A, UF1010E, UF3710, UF4N20, UF540, UF630
History: DCC040M65G2 | 6N10
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