UTT80P06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

UNISONIC TECHNOLOGIES CO., LTD UTT80P06 Preliminary Power MOSFET 80A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80P06 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. The UTC UTT80P06 is suitable for low voltage an

UNISONIC TECHNOLOGIES CO., LTD UTT80N75 Preliminary Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N75 is an N-Channel power MOSFET, it uses UTCs advanced technology to provide customers with a minimum 1on-state resistance, low gate charge and high switching speed. TO-220 FEATURES * 80A, 75V, RDS(ON)=10m @VGS=10V, ID=20A * Low gate charge

UNISONIC TECHNOLOGIES CO., LTD UTT80N06 Preliminary Power MOSFET 60V, 80A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N06 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith a minimum on-state resistance and high switching speed. It can also withstand high energy pluse in the avalanche and commutation mode. The UTC U

UNISONIC TECHNOLOGIES CO., LTD UTT80N08 Preliminary Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch etc. FEATURES * Trench FET Power MOSFETS Technology SYMBOL 2.Drai

UNISONIC TECHNOLOGIES CO., LTD UTT80N05 Preliminary Power MOSFET 80A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N05 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith a minimum on-state resistance, superior switching performanceand low gate charge. The UTC UTT80N05 is suitable for switching regulators, DC line

UTT80N10www.VBsemi.twN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.0085 at VGS = 10 V100100 Compliant to RoHS Directive 2002/95/EC0.010 at VGS = 6 V85TO-220ABDGSN-Channel MOSFETG D S ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise not