UTT80P06 - описание и поиск аналогов

 ..1. Size:123K  utc
 utt80p06.pdf 

UNISONIC TECHNOLOGIES CO., LTD UTT80P06 Preliminary Power MOSFET 80A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80P06 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. The UTC UTT80P06 is suitable for low voltage an

 9.1. Size:127K  utc
 utt80n75.pdf 

UNISONIC TECHNOLOGIES CO., LTD UTT80N75 Preliminary Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N75 is an N-Channel power MOSFET, it uses UTC s advanced technology to provide customers with a minimum 1 on-state resistance, low gate charge and high switching speed. TO-220 FEATURES * 80A, 75V, RDS(ON)=10m @VGS=10V, ID=20A * Low gate charge

 9.2. Size:201K  utc
 utt80n06.pdf 

UNISONIC TECHNOLOGIES CO., LTD UTT80N06 Preliminary Power MOSFET 60V, 80A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N06 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance and high switching speed. It can also withstand high energy pluse in the avalanche and commutation mode. The UTC U

 9.3. Size:127K  utc
 utt80n08.pdf 

UNISONIC TECHNOLOGIES CO., LTD UTT80N08 Preliminary Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch etc. FEATURES * Trench FET Power MOSFETS Technology SYMBOL 2.Drai

 9.4. Size:129K  utc
 utt80n05.pdf 

UNISONIC TECHNOLOGIES CO., LTD UTT80N05 Preliminary Power MOSFET 80A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N05 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance, superior switching performance and low gate charge. The UTC UTT80N05 is suitable for switching regulators, DC line

 9.5. Size:801K  cn vbsemi
 utt80n10.pdf 

UTT80N10 www.VBsemi.tw N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Maximum Junction Temperature 0.0085 at VGS = 10 V 100 100 Compliant to RoHS Directive 2002/95/EC 0.010 at VGS = 6 V 85 TO-220AB D G S N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise not