UTT100N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UTT100N06
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 130 nS
Cossⓘ - Capacitancia de salida: 1060 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de UTT100N06 MOSFET
UTT100N06 Datasheet (PDF)
utt100n06.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT100N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT100N06 is an N-channel enhancement mode 1Power FET using UTCs advanced technology to provide customers TO-220with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutatio
utt100n08.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT100N08 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT100N08 is an N-channel enhancement mode Power FET using UTCs advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation
utt100n05.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT100N05 Preliminary Power MOSFET 100A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100N05 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customers with minimum on-state resistance and superior switchingperformance. FEATURES * RDS(ON)= 7m @ VGS=10V, ID= 50A RDS(ON)= 10m @ VGS=4.5V,
utt100p03.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT100P03 Preliminary Power MOSFET 100A, 30V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100P03 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT100P03 is suitable for low voltage an
Otros transistores... UTT12P10 , UTT16P10 , UTT18P10 , UTT25P10 , UTT50P10 , UTT70P10 , UTT80P06 , UK4145 , IRF630 , UTT100N08 , UTT10N10 , UTT120N06 , UTT150N06 , UTT20N10 , UTT25N08 , UTT30N08 , UTT30N10 .
History: HM4853 | GP2M004A065XG | NVMFS5A160PLZ | NVMFS020N06C | HM4884 | MTM12P05 | NVMFS024N06C
History: HM4853 | GP2M004A065XG | NVMFS5A160PLZ | NVMFS020N06C | HM4884 | MTM12P05 | NVMFS024N06C



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