Справочник MOSFET. UTT100N06

 

UTT100N06 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: UTT100N06
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 500 nC
   trⓘ - Время нарастания: 130 ns
   Cossⓘ - Выходная емкость: 1060 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
   Тип корпуса: TO-220
     - подбор MOSFET транзистора по параметрам

 

UTT100N06 Datasheet (PDF)

 ..1. Size:160K  utc
 utt100n06.pdf pdf_icon

UTT100N06

UNISONIC TECHNOLOGIES CO., LTD UTT100N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT100N06 is an N-channel enhancement mode 1Power FET using UTCs advanced technology to provide customers TO-220with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutatio

 6.1. Size:123K  utc
 utt100n08.pdf pdf_icon

UTT100N06

UNISONIC TECHNOLOGIES CO., LTD UTT100N08 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT100N08 is an N-channel enhancement mode Power FET using UTCs advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation

 6.2. Size:123K  utc
 utt100n05.pdf pdf_icon

UTT100N06

UNISONIC TECHNOLOGIES CO., LTD UTT100N05 Preliminary Power MOSFET 100A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100N05 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customers with minimum on-state resistance and superior switchingperformance. FEATURES * RDS(ON)= 7m @ VGS=10V, ID= 50A RDS(ON)= 10m @ VGS=4.5V,

 8.1. Size:126K  utc
 utt100p03.pdf pdf_icon

UTT100N06

UNISONIC TECHNOLOGIES CO., LTD UTT100P03 Preliminary Power MOSFET 100A, 30V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100P03 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT100P03 is suitable for low voltage an

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... UTT12P10 , UTT16P10 , UTT18P10 , UTT25P10 , UTT50P10 , UTT70P10 , UTT80P06 , UK4145 , STP75NF75 , UTT100N08 , UTT10N10 , UTT120N06 , UTT150N06 , UTT20N10 , UTT25N08 , UTT30N08 , UTT30N10 .

 

 
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