UTT150N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UTT150N06
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 231 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 150 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 900 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
Paquete / Cubierta: TO-220
- Selección de transistores por parámetros
UTT150N06 Datasheet (PDF)
utt150n06.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT150N06 Preliminary Power MOSFET 150 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT150N06 is an N-channel Power Trench MOSFET, using UTCs advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTT150N06 is generally applied in synchronous Rectification or DC t
utt150n03.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT150N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT150N03 is a N-channel power MOSFET, usingUTCs advanced trench technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. The UTC UTT150N03 is generally applied in DC to DC convertor,
utt15p06.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT15P06 Preliminary Power MOSFET 15A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT15P06 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed, cost-effectiveness and minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON)=90m
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History: IRLU7821PBF | HITJ0203MP | SPP80P06PH | IRFPC42R | MC10N005 | SIHF9540S | LP3218DT1G
History: IRLU7821PBF | HITJ0203MP | SPP80P06PH | IRFPC42R | MC10N005 | SIHF9540S | LP3218DT1G



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