Справочник MOSFET. UTT150N06

 

UTT150N06 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: UTT150N06
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 231 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 150 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 900 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0032 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для UTT150N06

 

 

UTT150N06 Datasheet (PDF)

 ..1. Size:190K  utc
utt150n06.pdf

UTT150N06
UTT150N06

UNISONIC TECHNOLOGIES CO., LTD UTT150N06 Preliminary Power MOSFET 150 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT150N06 is an N-channel Power Trench MOSFET, using UTCs advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTT150N06 is generally applied in synchronous Rectification or DC t

 6.1. Size:182K  utc
utt150n03.pdf

UTT150N06
UTT150N06

UNISONIC TECHNOLOGIES CO., LTD UTT150N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT150N03 is a N-channel power MOSFET, usingUTCs advanced trench technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. The UTC UTT150N03 is generally applied in DC to DC convertor,

 9.1. Size:152K  utc
utt15p06.pdf

UTT150N06
UTT150N06

UNISONIC TECHNOLOGIES CO., LTD UTT15P06 Preliminary Power MOSFET 15A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT15P06 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed, cost-effectiveness and minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON)=90m

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