UTT30N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UTT30N10
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 79 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 46 nS
Cossⓘ - Capacitancia de salida: 190 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
Paquete / Cubierta: TO-220 TO-252 TO-263
Búsqueda de reemplazo de UTT30N10 MOSFET
UTT30N10 Datasheet (PDF)
utt30n10.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT30N10 Preliminary Power MOSFET 30A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30N10 is a N-channel mode power MOSFET usingUTCs advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed. The UTC UTT30N10 is suitable for high voltage synchronous rectifier and DC/DC co
utt30n10.pdf

Isc N-Channel MOSFET Transistor UTT30N10FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
utt30n06.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT30N06 Power MOSFET 30A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used in automotiveapplications of power suppl
utt30n08.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT30N08 Preliminary Power MOSFET 80V, 30A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30N08 is an N-channel mode power MOSFET usingUTCs advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy
Otros transistores... UTT100N06 , UTT100N08 , UTT10N10 , UTT120N06 , UTT150N06 , UTT20N10 , UTT25N08 , UTT30N08 , K4145 , UTT36N10 , UTT50N06 , UTT60N06 , UTT60N10 , UTT6N10 , UTT75N08 , UTT75N75 , UTT80N06 .
History: SM3413PSQG | BSC009NE2LS | CHM6030LPAGP | AO3499 | BSC010N04LS6 | AP6P064H | SM2202NSQE
History: SM3413PSQG | BSC009NE2LS | CHM6030LPAGP | AO3499 | BSC010N04LS6 | AP6P064H | SM2202NSQE



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