UTT30N10 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: UTT30N10
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 79 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 46 ns
Cossⓘ - Выходная емкость: 190 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.032 Ohm
Тип корпуса: TO-220 TO-252 TO-263
- подбор MOSFET транзистора по параметрам
UTT30N10 Datasheet (PDF)
utt30n10.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT30N10 Preliminary Power MOSFET 30A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30N10 is a N-channel mode power MOSFET usingUTCs advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed. The UTC UTT30N10 is suitable for high voltage synchronous rectifier and DC/DC co
utt30n10.pdf

Isc N-Channel MOSFET Transistor UTT30N10FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
utt30n06.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT30N06 Power MOSFET 30A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used in automotiveapplications of power suppl
utt30n08.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT30N08 Preliminary Power MOSFET 80V, 30A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30N08 is an N-channel mode power MOSFET usingUTCs advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: FRE9260D | 2N6760JANTXV | RU7550S | STP20NM60FP | RS1E130GN | AUIRFZ34N | IRLML9301TRPBF
History: FRE9260D | 2N6760JANTXV | RU7550S | STP20NM60FP | RS1E130GN | AUIRFZ34N | IRLML9301TRPBF



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