UTT30N10. Аналоги и основные параметры
Наименование производителя: UTT30N10
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 79 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 46 ns
Cossⓘ - Выходная емкость: 190 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.032 Ohm
Тип корпуса: TO-220 TO-252 TO-263
Аналог (замена) для UTT30N10
- подборⓘ MOSFET транзистора по параметрам
UTT30N10 даташит
utt30n10.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT30N10 Preliminary Power MOSFET 30A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30N10 is a N-channel mode power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed. The UTC UTT30N10 is suitable for high voltage synchronous rectifier and DC/DC co
utt30n10.pdf
Isc N-Channel MOSFET Transistor UTT30N10 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta
utt30n06.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT30N06 Power MOSFET 30A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used in automotive applications of power suppl
utt30n08.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT30N08 Preliminary Power MOSFET 80V, 30A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30N08 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy
Другие IGBT... UTT100N06, UTT100N08, UTT10N10, UTT120N06, UTT150N06, UTT20N10, UTT25N08, UTT30N08, 2N7002, UTT36N10, UTT50N06, UTT60N06, UTT60N10, UTT6N10, UTT75N08, UTT75N75, UTT80N06
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Список транзисторов
Обновления
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