90N02 Todos los transistores

 ..1. Size:167K  utc
 90n02.pdf

UNISONIC TECHNOLOGIES CO., LTD 90N02/A Power MOSFET 90A, 20V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 90N02/A is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance, superior switching performance and low gate charge. The UTC 90N02/A is suitable for switching regulators, DC linear mode control

 0.1. Size:383K  st
 std90n02l-1 std90n02l.pdf

STD90N02L STD90N02L-1 N-channel 25V - 0.0052 - 60A - DPAK - IPAK STripFET III Power MOSFET Features RDS(on) Type VDSS ID Max STD90N02L 25V

 0.2. Size:387K  st
 std90n02l std90n02l-1.pdf

STD90N02L STD90N02L-1 N-channel 25V - 0.0052 - 60A - DPAK - IPAK STripFET III Power MOSFET Features RDS(on) Type VDSS ID Max STD90N02L 25V

 0.3. Size:69K  onsemi
 ntb90n02 ntb90n02 ntp90n02 ntp90n02.pdf

NTB90N02, NTP90N02 Power MOSFET 90 Amps, 24 Volts N-Channel D2PAK and TO-220 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge http //onsemi.com circuits. Features V(BR)DSS RDS(on) TYP ID MAX Pb-Free Packages are Available 5.0 mW @ 10 V 24 V 90 A Typical Applications 7.5 mW @ 4.5 V Power Supplies

 0.4. Size:65K  analog power
 am90n02-04d.pdf

Analog Power AM90N02-04D N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 3.8 @ VGS = 4.5V 94 converters and power management in portable and 20 4.6 @ VGS = 2.5V 86 ba

 0.5. Size:367K  cystek
 mta090n02kc3.pdf

Spec. No. C983C3 CYStech Electronics Corp. Issued Date 2014.11.19 Revised Date Page No. 1/8 20V N-Channel Enhancement Mode MOSFET MTA090N02KC3 BVDSS 20V ID @VGS=4V, TA=25 C 1.4A RDSON@VGS=4V, ID=1A 63m (typ) RDSON@VGS=2.5V,ID=1A 83m (typ) Features RDSON@VGS=1.8V,ID=500mA 160m (typ) Simple drive requirement Small package outline Pb-free lead

 0.6. Size:4807K  maple semi
 sld90n02tb.pdf

SLD90N02TB 20V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced 89.3A, 20V, RDS(on),Typ = 2.8m TRENCH technology. This advanced technology has been es- Low gate charge (Qg,typ = 38nC) pecially tailored to minimize conduction loss, provide superior Fast switching switching performance, and withstand high energy pulse in

 0.7. Size:611K  way-on
 wmb90n02ts.pdf

WMB90N02TS 20V N-Channel Enhancement Mode Power MOSFET Description WMB90N02TS uses advanced power trench technology that has been D D D D D D D D especially tailored to minimize the on-state resistance and yet maintain superior switching performance. G ss s ss G s Features PDFN5060-8L V = 20V, I = 90A DS D R

 0.8. Size:459K  way-on
 wmo90n02t1.pdf

 0.9. Size:1454K  huashuo
 hsu90n02.pdf

HSU90N02 N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSU90N02 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 2.7 m gate charge for most of the synchronous buck converter applications. ID 90 A The HSU90N02 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab

 0.10. Size:479K  jiejie micro
 jmtq90n02a.pdf

JMTQ90N02A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 20V, 60A Load Switch RDS(ON)

 0.11. Size:476K  jiejie micro
 jmtk90n02a.pdf

JMTK90N02A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 20V, 90A Load Switch RDS(ON)

 0.12. Size:511K  jiejie micro
 jmtg90n02a.pdf

JMTG90N02A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 20V, 75A Load Switch RDS(ON)

 0.13. Size:593K  cn yangzhou yangjie elec
 yjd90n02a.pdf

RoHS COMPLIANT YJD90N02A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 90A D R ( at V =4.5V) 4.5mohm DS(ON) GS R ( at V =2.5V) 5.0mohm DS(ON) GS R ( at V =1.8V) 7.5mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package

 0.14. Size:1234K  cn apm
 ap90n02d.pdf

AP90N02D 20V N-Channel Enhancement Mode MOSFET Description The AP90N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =90A DS D R

 0.15. Size:1655K  cn apm
 ap90n02nf.pdf

AP90N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP90N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =90 A DS D R