UNISONIC TECHNOLOGIES CO., LTD 90N02/A Power MOSFET 90A, 20V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 90N02/A is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith a minimum on-state resistance, superior switching performanceand low gate charge. The UTC 90N02/A is suitable for switching regulators, DC linear mode control

STD90N02LSTD90N02L-1N-channel 25V - 0.0052 - 60A - DPAK - IPAKSTripFET III Power MOSFETFeaturesRDS(on) Type VDSS IDMaxSTD90N02L 25V

STD90N02LSTD90N02L-1N-channel 25V - 0.0052 - 60A - DPAK - IPAKSTripFET III Power MOSFETFeaturesRDS(on) Type VDSS IDMaxSTD90N02L 25V

NTB90N02, NTP90N02Power MOSFET90 Amps, 24 VoltsN-Channel D2PAK and TO-220Designed for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgehttp://onsemi.comcircuits.Features V(BR)DSS RDS(on) TYP ID MAX Pb-Free Packages are Available5.0 mW @ 10 V24 V 90 ATypical Applications7.5 mW @ 4.5 V Power Supplies

Analog Power AM90N02-04DN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 3.8 @ VGS = 4.5V 94converters and power management in portable and 204.6 @ VGS = 2.5V 86ba

Spec. No. : C983C3 CYStech Electronics Corp. Issued Date : 2014.11.19 Revised Date : Page No. : 1/8 20V N-Channel Enhancement Mode MOSFET MTA090N02KC3 BVDSS 20VID @VGS=4V, TA=25C 1.4A RDSON@VGS=4V, ID=1A 63m (typ) RDSON@VGS=2.5V,ID=1A 83m (typ) Features RDSON@VGS=1.8V,ID=500mA 160m (typ) Simple drive requirement Small package outline Pb-free lead

WMB90N02TS 20V N-Channel Enhancement Mode Power MOSFET DescriptionWMB90N02TS uses advanced power trench technology that has been D DDDDDD Despecially tailored to minimize the on-state resistance and yet maintain superior switching performance. GsssssGsFeatures PDFN5060-8L V = 20V, I = 90A DS DR

WMO90N02T1 20V N-Channel Enhancement Mode Power MOSFET DescriptionWMO90N02T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = 20V, I = 90A DS DTO-252R

HSU90N02 N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSU90N02 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 2.7 m gate charge for most of the synchronous buck converter applications. ID 90 A The HSU90N02 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab

RoHS COMPLIANT YJD90N02A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 90A D R ( at V =4.5V) 4.5mohm DS(ON) GS R ( at V =2.5V) 5.0mohm DS(ON) GS R ( at V =1.8V) 7.5mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package