UTD405 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UTD405
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 190 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0245 Ohm
Búsqueda de reemplazo de UTD405 MOSFET
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UTD405 datasheet
utd405.pdf
UNISONIC TECHNOLOGIES CO., LTD UTD405 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTD405 can provide excellent RDS(ON), low gate charge and low gate resistance by using advanced trench technology. This device is well suited for high current load applications with the excellent thermal resistance. FEATURES * RDS(ON) = 32m @VGS = -10 V * Low capacitance
utd408.pdf
UNISONIC TECHNOLOGIES CO., LTD UTD408 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON) = 18m @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain *Pb-free plating product number UTD408L 1.Gate 3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Le
utd408l-tn3-r utd408g-tn3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UTD408 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON) = 18m @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 UTD408L-
Otros transistores... UT4435, UT6401, UT70P03, UT7401, UT9435, UT9435H, UT9435HZ, UTC654, IRFP460, UTR4502, UTT100P03, UTT36P03, UTT4407, UTT4425, UTT4815, UTT60P03, BSS84Z
History: FQN1N50CBU
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