UTD405 - параметры транзистора MOSFET, его аналоги, datasheet

UTD405 Datasheet (PDF)

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UNISONIC TECHNOLOGIES CO., LTD UTD405 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTD405 can provide excellent RDS(ON), low gate charge and low gate resistance by using advanced trench technology. This device is well suited for high current load applications with the excellent thermal resistance. FEATURES * RDS(ON) = 32m @VGS = -10 V * Low capacitance

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UNISONIC TECHNOLOGIES CO., LTD UTD408 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON) = 18m @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain*Pb-free plating product number: UTD408L1.Gate3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Le

9.2. Size:303K utc
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UNISONIC TECHNOLOGIES CO., LTD UTD408 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON) = 18m @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain1.Gate3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3UTD408L-

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